专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2011035041A2 SUBSTRATE TRANSFER MECHANISM WITH PREHEATING FEATURES 审中-公开
标题翻译：具有预热功能的基板传输机制
公开(公告)号：WO2011035041A2
公开(公告)日：2011-03-24
申请号：PCT/US2010/049144
申请日：2010-09-16
申请人： APPLIED MATERIALS, INC. , ISHIKAWA, Tetsuya , PANG, Lily L. , PHAM, Quyen D. , OLGADO, Donald J.K.
发明人： ISHIKAWA, Tetsuya , PANG, Lily L. , PHAM, Quyen D. , OLGADO, Donald J.K.
IPC分类号： H01L21/677 , B65G49/07 , B25J15/00 , H05B3/02
CPC分类号： H01L21/67196 , H01L21/67103 , H01L21/67742 , H01L21/68707
摘要： Embodiments of the present invention provide apparatus and method for heating one or more substrates during transfer. One embodiment provides a robot blade assembly for supporting a substrate or a substrate carrier thereon. The robot blade assembly comprises a base plate, an induction heating assembly disposed on the base plate, and a top plate disposed above the induction heating assembly. Another embodiment provides an induction heating assembly disposed over a transfer chamber having a substrate transfer mechanism disposed therein.
摘要翻译：本发明的实施例提供了用于在传送期间加热一个或多个衬底的装置和方法。一个实施例提供了用于在其上支撑衬底或衬底载体的机器人刀片组件。机器人刀片组件包括基板，设置在基板上的感应加热组件和设置在感应加热组件上方的顶板。另一个实施例提供了一种感应加热组件，其设置在其中设置有基板传送机构的传送室上方。

2. 发明申请

WO2004094702A2 MULTI-CHEMISTRY PLATING SYSTEM 审中-公开
标题翻译：多化学镀层系统
公开(公告)号：WO2004094702A2
公开(公告)日：2004-11-04
申请号：PCT/US2004/012012
申请日：2004-04-16
申请人： APPLIED MATERIALS, INC. , ELLWANGER, Russell, C. , YANG, Michael, X. , XI, Ming , BRITCHER, Eric, B. , DONOSO, Bernardo , PANG, Lily, L. , SHERMAN, Svetlana , HO, Henry , NGUYEN, Anh, N. , LERNER, Alexander, N. , D'AMBRA, Allen, L. , SHANMUGASUNDRAM, Arulkumar , ISHIKAWA, Tetsuya , RABINOVICH, Yevgeniy , LUBOMIRSKY, Dmitry , MOK, Yeuk-Fai, Edwin , NGUYEN, Son, T.
发明人： YANG, Michael, X. , XI, Ming , BRITCHER, Eric, B. , DONOSO, Bernardo , PANG, Lily, L. , SHERMAN, Svetlana , HO, Henry , NGUYEN, Anh, N. , LERNER, Alexander, N. , D'AMBRA, Allen, L. , SHANMUGASUNDRAM, Arulkumar , ISHIKAWA, Tetsuya , RABINOVICH, Yevgeniy , LUBOMIRSKY, Dmitry , MOK, Yeuk-Fai, Edwin , NGUYEN, Son, T.
IPC分类号： C25D
CPC分类号： H01L21/67167 , B08B3/02 , C25D5/003 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6719 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.
摘要翻译：本发明的实施方案通常提供电化学电镀系统。电镀系统包括位于与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

3. 发明申请

WO2011028529A2 IN-SITU DEPOSITION OF BATTERY ACTIVE LITHIUM MATERIALS BY THERMAL SPRAYING 审中-公开
标题翻译：热喷涂原位沉积电池活性锂材料
公开(公告)号：WO2011028529A2
公开(公告)日：2011-03-10
申请号：PCT/US2010/046501
申请日：2010-08-24
申请人： APPLIED MATERIALS, INC. , SHANG, Quanyuan , YANG, Lu , BROWN, Karl M. , OLGADO, Donald J. K. , PEBENITO, Victor , BOLANDI, Hooman , ISHIKAWA, Tetsuya , BACHRACH, Robert Z. , CHEN, Liang-Yuh
发明人： SHANG, Quanyuan , YANG, Lu , BROWN, Karl M. , OLGADO, Donald J. K. , PEBENITO, Victor , BOLANDI, Hooman , ISHIKAWA, Tetsuya , BACHRACH, Robert Z. , CHEN, Liang-Yuh
IPC分类号： C23C4/12 , C23C4/04 , C23C4/18 , B05D1/08 , B05D3/00 , B05D7/14
CPC分类号： H01M4/0419 , H01M4/1391
摘要： A method and apparatus for forming an electrochemical layer of a thin film battery is provided. A precursor mixture comprising electrochemically active precursor particles dispersed in a carrying medium is provided to a processing chamber and thermally treated using a combustible gas mixture also provided to the chamber. The precursor is converted to nanocrystals by the thermal energy, and the nanocrystals are deposited on a substrate. A second precursor may be blended with the nanocrystals as they deposit on the surface to enhance adhesion and conductivity.
摘要翻译：提供了一种用于形成薄膜电池的电化学层的方法和设备。将包含分散于载运介质中的电化学活性前体颗粒的前体混合物提供至处理室并使用也提供至该室的可燃气体混合物进行热处理。前体通过热能转化成纳米晶体，并且纳米晶体沉积在基底上。第二种前体可以与纳米晶体混合，因为它们沉积在表面上以增强附着力和导电性。

4. 发明申请

WO2011009093A2 A METHOD OF FORMING A GROUP III-NITRIDE CRYSTALLINE FILM ON A PATTERNED SUBSTRATE BY HYDRIDE VAPOR PHASE EPITAXY (HVPE) 审中-公开
标题翻译：通过氢化物气相外延（HVPE）在图案化基板上形成III族氮化物结晶膜的方法
公开(公告)号：WO2011009093A2
公开(公告)日：2011-01-20
申请号：PCT/US2010/042351
申请日：2010-07-16
申请人： APPLIED MATERIALS, INC. , KRYLIOUK, Olga , MELNIK, Yuriy , KOJIRI, Hidehiro , ISHIKAWA, Tetsuya
发明人： KRYLIOUK, Olga , MELNIK, Yuriy , KOJIRI, Hidehiro , ISHIKAWA, Tetsuya
IPC分类号： H01L21/20 , H01L33/02
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/04 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/22
摘要： A method of depositing a high quality low defect single crystalline Group Ill-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group Ill-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group Ill-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.
摘要翻译：一种沉积高质量低缺陷单晶III族氮化物膜的方法。提供具有多个特征的图案化衬底，其中倾斜侧壁被空间隔开。通过氢化物气相外延（HVPE）工艺在图案化衬底上沉积III族氮化物膜。 HVPE沉积工艺形成在特征之间的空间中具有第一晶体取向并且在倾斜侧壁上具有第二不同晶体取向的III族氮化物膜。空间中的第一个晶体取向随后在侧壁上过度扩大第二晶体取向，并且在该过程中翻转并终止在第一晶体取向中形成的踩踏位错。

5. 发明申请

WO2010118293A3 HVPE CHAMBER HARDWARE 审中-公开
公开(公告)号：WO2010118293A3
公开(公告)日：2010-10-14
申请号：PCT/US2010/030492
申请日：2010-04-09
申请人： APPLIED MATERIALS, INC. , ISHIKAWA, Tetsuya , QUACH, David, H. , CHANG, Anzhong , KRYLIOUK, Olga , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
发明人： ISHIKAWA, Tetsuya , QUACH, David, H. , CHANG, Anzhong , KRYLIOUK, Olga , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
IPC分类号： H01L21/20 , H01L33/02
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

6. 发明申请

WO2011037647A1 AUTOMATIC SUBSTRATE LOADING STATION 审中-公开
标题翻译：自动基座装载站
公开(公告)号：WO2011037647A1
公开(公告)日：2011-03-31
申请号：PCT/US2010/027938
申请日：2010-03-19
申请人： APPLIED MATERIALS, INC. , QUACH, David H. , ISHIKAWA, Tetsuya
发明人： QUACH, David H. , ISHIKAWA, Tetsuya
IPC分类号： H01L21/677 , H01L21/68 , B65G49/07
CPC分类号： C23C16/54 , H01L21/67161 , H01L21/67201 , H01L21/67207 , H01L21/67259 , H01L21/67748 , H01L21/67751 , H01L21/68 , H01L21/68764 , H01L21/68771
摘要： Embodiments of the present invention provide method and apparatus for automatically loading substrates to a substrate carrier tray. On embodiment of the present invention provides an automatic substrate loader comprises a cassette handling mechanism, a substrate aligner configured to align a substrate, and a carrier tray aligner. The automatic substrate loader further comprises a first robot configured to transfer substrates between the substrate aligner and the substrate storage cassettes, and a second robot configured to transfer substrates between the substrate aligner and the carrier tray disposed on the carrier tray aligner.
摘要翻译：本发明的实施例提供了用于将衬底自动加载到衬底托盘的方法和装置。在本发明的实施例中，提供一种自动基板装载器，其包括盒式处理机构，被配置为对准基板的基板对准器和载体盘对准器。自动基板装载器还包括第一机器人，其被配置为在基板对准器和基板存储盒之间传送基板，以及第二机器人，其被配置为在基板对准器和设置在托盘调准器上的托盘之间传送基板。

7. 发明申请

WO2011028527A3 IN-SITU DEPOSITION OF BATTERY ACTIVE LITHIUM MATERIALS BY PLASMA SPRAYING 审中-公开
公开(公告)号：WO2011028527A3
公开(公告)日：2011-03-10
申请号：PCT/US2010/046498
申请日：2010-08-24
申请人： APPLIED MATERIALS, INC. , SHANG, Quanyuan , YANG, Lu , BROWN, Karl M. , OLGADO, Donald J., K. , PEBENITO, Victor , BOLANDI, Hooman , ISHIKAWA, Tetsuya , BACHRACH, Robert Z. , CHEN, Liang-Yuh
发明人： SHANG, Quanyuan , YANG, Lu , BROWN, Karl M. , OLGADO, Donald J., K. , PEBENITO, Victor , BOLANDI, Hooman , ISHIKAWA, Tetsuya , BACHRACH, Robert Z. , CHEN, Liang-Yuh
IPC分类号： C23C4/12 , C23C4/04 , C23C4/18 , B05D1/04 , B05D3/00 , B05D7/14
摘要： A method and apparatus for forming an electrochemical layer of a thin film battery is provided. A precursor mixture comprising precursor particles dispersed in a carrying medium is activated in an activation chamber by application of an electric field to ionize at least a portion of the precursor mixture. The activated precursor mixture is then mixed with a combustible gas mixture to add thermal energy to the precursor particles, converting them to nanocrystals, which deposit on a substrate. A second precursor may be blended with the nanocrystals as they deposit on the surface to enhance adhesion and conductivity

8. 发明申请

WO2011011532A4 HOLLOW CATHODE SHOWERHEAD 审中-公开
公开(公告)号：WO2011011532A4
公开(公告)日：2011-01-27
申请号：PCT/US2010/042773
申请日：2010-07-21
申请人： APPLIED MATERIALS, INC. , QUACH, David , ISHIKAWA, Tetsuya , KRYLIOUK, Olga , BURROWS, Brian , TAM, Alexander , POON, Tze , CHANG, Anzhong
发明人： QUACH, David , ISHIKAWA, Tetsuya , KRYLIOUK, Olga , BURROWS, Brian , TAM, Alexander , POON, Tze , CHANG, Anzhong
IPC分类号： H01L21/205
摘要： Embodiments of the present invention provide method and apparatus for performing metal HVPE or MOCVD process using radicals from a plasma. One embodiment of the present invention provides a processing chamber having a gas distribution assembly configured to generate a plasma and provide one or more radical species to a processing volume while shielding electrical field of the plasma from the processing volume. In one embodiment the gas distribution assembly has a plurality of passages defined by a bore connected to a cone, wherein the aspect ratio of the bore is adjusted to allow passage of radicals in the plasma and retain the electrical field of the plasma.

9. 发明申请

WO2006115731A1 ELECTROSTATIC CHUCK FOR SEMICONDUCTOR WORKPIECES 审中-公开
标题翻译：用于半导体工件的静电切割机
公开(公告)号：WO2006115731A1
公开(公告)日：2006-11-02
申请号：PCT/US2006/013078
申请日：2006-04-06
申请人： APPLIED MATERIALS, INC. , ISHIKAWA, Tetsuya , LUE, Brian
发明人： ISHIKAWA, Tetsuya , LUE, Brian
IPC分类号： H01L21/683 , B23Q3/15 , H02N13/00 , B23Q3/154
CPC分类号： H02N13/00 , H01L21/67103 , H01L21/6831
摘要： A chuck for a semiconductor workpiece features integrated resistive heating and electrostatic bipolar chucking elements on a thermal pedestal. These integrated heating and chucking elements maintain wafer flatness, as well as uniformity of an underlying gap accommodating a thermal gas between the workpiece and the chuck. In accordance with one embodiment of the present invention, a laminated Kapton wafer heater is attached to the top of the thermal surface, under the wafer: At least two electrical voltage zones are isolated within the heater, in order to create a chucking force between the chuck and the wafer without having to contact the wafer with an electrical conductor. These voltage zones can be created by using separate conducting elements as well as by imposing a DC bias on zones including the resistive heating elements.
摘要翻译：用于半导体工件的卡盘在热基座上具有集成的电阻加热和静电双极夹紧元件。这些集成的加热和夹紧元件保持晶圆平坦度，以及在工件和卡盘之间容纳热气体的底部间隙的均匀性。根据本发明的一个实施例，层压的Kapton晶片加热器附着在晶片下面的热表面的顶部：至少两个电压区在加热器内隔离，以便在加热器之间产生夹紧力卡盘和晶片，而不必与电导体接触晶片。这些电压区可以通过使用单独的导电元件以及通过在包括电阻加热元件的区域上施加DC偏压来产生。

10. 发明申请

WO2006069341A2 CLUSTER TOOL ARCHITECTURE FOR PROCESSING A SUBSTRATE 审中-公开
标题翻译：集群工具架构处理基板
公开(公告)号：WO2006069341A2
公开(公告)日：2006-06-29
申请号：PCT/US2005/046877
申请日：2005-12-21
申请人： APPLIED MATERIALS, INC. , ISHIKAWA, Tetsuya , ROBERTS, Rick, J. , ARMER, Helen, R. , VOLFOVSKI, Leon , PINSON, Jay, D. , RICE, Michael , QUACH, David, H. , SALEK, Mohsen, S. , LOWRANCE, Robert , BACKER, John, A. , WEAVER, William, Tyler , CARLSON, Charles , WANG, Chongyang , HUDGENS, Jeffrey , HERCHEN, Harald , LUE, Brian
发明人： ISHIKAWA, Tetsuya , ROBERTS, Rick, J. , ARMER, Helen, R. , VOLFOVSKI, Leon , PINSON, Jay, D. , RICE, Michael , QUACH, David, H. , SALEK, Mohsen, S. , LOWRANCE, Robert , BACKER, John, A. , WEAVER, William, Tyler , CARLSON, Charles , WANG, Chongyang , HUDGENS, Jeffrey , HERCHEN, Harald , LUE, Brian
IPC分类号： H01L21/00
CPC分类号： H01L21/67167 , H01L21/67173 , H01L21/67178 , H01L21/67184 , H01L21/67742 , H01L21/67754 , H01L21/67766 , H01L21/67781
摘要： Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased throughput, increased reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also has a smaller system footprint. In one embodiment of the cluster tool, the cost of ownership is reduced by grouping substrates together and transferring and processing the substrates in groups of two or more to improve system throughput, and reduces the number of moves a robot has to make to transfer a batch of substrates between the processing chambers, thus reducing wear on the robot and increasing system reliability. Embodiments also provide for a method and apparatus that are used to increase the reliability of the substrate transfer process to reduce system down time.
摘要翻译：实施方式通常提供了一种用于使用多室处理系统（例如，群集工具）来处理衬底的设备和方法，所述多室处理系统具有增加的生产量，增加的可靠性，在群集工具中处理的衬底具有更多可重复的晶圆历史，并且还具有较小的系统尺寸。在群集工具的一个实施例中，通过将衬底分组在一起并且以两个或更多个成组的方式传送和处理衬底来降低所有权成本，以提高系统吞吐量，并且减少机器人为了传送批次而必须做出的移动次数的处理室之间的基板，从而减少了机器人的磨损并提高了系统的可靠性。实施例还提供了用于增加衬底传输过程的可靠性以减少系统停机时间的方法和设备。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式