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1. 发明申请

WO2012122331A3 PLASMA-ASSISTED MOCVD FABRICATION OF P-TYPE GROUP III-NITRIDE MATERIALS 审中-公开
标题翻译： P型III族氮化物材料的等离子体辅助MOCVD制备
公开(公告)号：WO2012122331A3
公开(公告)日：2012-11-22
申请号：PCT/US2012028187
申请日：2012-03-08
申请人： APPLIED MATERIALS INC , BROWN KARL , GRIFFIN KEVIN , BOUR DAVID , KRYLIOUK OLGA
发明人： BROWN KARL , GRIFFIN KEVIN , BOUR DAVID , KRYLIOUK OLGA
IPC分类号： H01L21/205 , H01L21/318
CPC分类号： H01L21/0262 , C23C16/303 , C23C16/452 , C23C16/56 , H01L21/0237 , H01L21/0254 , H01L21/02579 , H01L33/007
摘要： The plasma-assisted metal-organic chemical vapor deposition (MOCVD) fabrication of a p-type group III-nitride material is described. For example, a method of fabricating a p-type group III-nitride material includes generating a nitrogen-based plasma. A nitrogen-containing species from the nitrogen-based plasma is reacted with a group III precursor and a p-type dopant precursor in a metal-organic chemical vapor deposition (MOCVD) chamber. A group III-nitride layer including p-type dopants is then formed above a substrate.
摘要翻译：描述了p型III族氮化物材料的等离子辅助金属有机化学气相沉积（MOCVD）制造。例如，制造p型III族氮化物材料的方法包括产生氮基等离子体。来自氮基等离子体的含氮物质在金属有机化学气相沉积（MOCVD）室中与III族前体和p型掺杂剂前体反应。然后在衬底上方形成包括p型掺杂剂的III族氮化物层。

2. 发明申请

WO2011133304A3 GROUP III-NITRIDE N-TYPE DOPING 审中-公开
标题翻译： III类氮化物N型掺杂
公开(公告)号：WO2011133304A3
公开(公告)日：2012-03-29
申请号：PCT/US2011030603
申请日：2011-03-30
申请人： APPLIED MATERIALS INC , MELNIK YURIY , KRYLIOUK OLGA , CHEN LU , KOJIRI HIDEHIRO , TETSUYA ISHIKAWA
发明人： MELNIK YURIY , KRYLIOUK OLGA , CHEN LU , KOJIRI HIDEHIRO , TETSUYA ISHIKAWA
IPC分类号： H01L21/20 , H01L21/205 , H01L33/32 , H01L33/34
CPC分类号： H01L21/2233 , C23C16/30 , C23C16/303 , C30B25/02 , C30B29/403 , H01L21/67115 , H01L21/68764 , H01L21/68771 , H01L33/007 , H01L33/325
摘要： A method for N-type doping a group Ill-nitride film is disclosed. A silicon (Si) dopant source in a delivery line is coupled with a reaction chamber configured to form the group Ill-nitride film. A chlorine-containing species is added to the Si dopant source in the delivery line to form a Si-doped group Ill-nitride film in the reaction chamber.
摘要翻译：公开了一种用于N型掺杂III族氮化物膜的方法。输送管线中的硅（Si）掺杂剂源被配置成形成III族氮化物膜的反应室。在输送管线中的Si掺杂剂源中加入含氯物质，以在反应室中形成Si掺杂的III族氮化物膜。

3. 发明申请

WO2010129289A4 DECONTAMINATION OF MOCVD CHAMBER USING NH3 PURGE AFTER IN-SITU CLEANING 审中-公开
标题翻译：在现场清洁后使用NH3净化的MOCVD室的去除
公开(公告)号：WO2010129289A4
公开(公告)日：2011-04-07
申请号：PCT/US2010032592
申请日：2010-04-27
申请人： APPLIED MATERIALS INC , KRYLIOUK OLGA , SU JIE , GRIFFIN KEVIN , JUN SUNG WON , NIJHAWAN SANDEEP , DONG XIZI , POON TZE , WASHINGTON LORI D , GRAYSON JACOB
发明人： KRYLIOUK OLGA , SU JIE , GRIFFIN KEVIN , JUN SUNG WON , NIJHAWAN SANDEEP , DONG XIZI , POON TZE , WASHINGTON LORI D , GRAYSON JACOB
IPC分类号： H01L21/02 , H01L21/205 , H01L33/02
CPC分类号： C23C16/301 , C23C16/4405 , C23C16/4408 , C30B25/00 , C30B29/40 , C30B29/406 , H01L33/007 , H01L33/0075
摘要： Embodiments of the present invention generally relate to methods and apparatus for removing unwanted deposition build-up from one more interior surfaces of a substrate processing chamber after a substrate is processed in a chamber to form, for example, Group III-V materials by metal-organic chemical vapor deposition (MOCVD) deposition processes. In one embodiment, a method for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber is provided. The method comprises depositing one or more Group III containing layers over a substrate disposed in the substrate processing chamber, transferring the substrate out of the substrate processing chamber, and pulsing a halogen containing gas into the substrate processing chamber to remove at least a portion of the unwanted deposition build-up from one or more interior surfaces of the substrate processing chamber.
摘要翻译：本发明的实施方案一般涉及用于在衬底在腔室中处理以形成例如III-V族材料之后，从衬底处理室的多个内表面去除不想要的沉积积聚的方法和装置，有机化学气相沉积（MOCVD）沉积工艺。在一个实施例中，提供了从衬底处理室的一个或多个内表面去除不想要的沉积积聚的方法。该方法包括在设置在衬底处理室中的衬底上沉积一个或多个含III族的层，将衬底转移到衬底处理室之外，并将含卤素的气体脉冲到衬底处理室中以去除至少一部分从衬底处理室的一个或多个内表面积聚不需要的沉积物。

4. 发明申请

WO2011009093A2 A METHOD OF FORMING A GROUP III-NITRIDE CRYSTALLINE FILM ON A PATTERNED SUBSTRATE BY HYDRIDE VAPOR PHASE EPITAXY (HVPE) 审中-公开
标题翻译：通过氢化物气相外延（HVPE）在图案化基板上形成III族氮化物结晶膜的方法
公开(公告)号：WO2011009093A2
公开(公告)日：2011-01-20
申请号：PCT/US2010/042351
申请日：2010-07-16
申请人： APPLIED MATERIALS, INC. , KRYLIOUK, Olga , MELNIK, Yuriy , KOJIRI, Hidehiro , ISHIKAWA, Tetsuya
发明人： KRYLIOUK, Olga , MELNIK, Yuriy , KOJIRI, Hidehiro , ISHIKAWA, Tetsuya
IPC分类号： H01L21/20 , H01L33/02
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/04 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/22
摘要： A method of depositing a high quality low defect single crystalline Group Ill-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group Ill-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group Ill-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.
摘要翻译：一种沉积高质量低缺陷单晶III族氮化物膜的方法。提供具有多个特征的图案化衬底，其中倾斜侧壁被空间隔开。通过氢化物气相外延（HVPE）工艺在图案化衬底上沉积III族氮化物膜。 HVPE沉积工艺形成在特征之间的空间中具有第一晶体取向并且在倾斜侧壁上具有第二不同晶体取向的III族氮化物膜。空间中的第一个晶体取向随后在侧壁上过度扩大第二晶体取向，并且在该过程中翻转并终止在第一晶体取向中形成的踩踏位错。

5. 发明申请

WO2010129183A2 MOCVD SINGLE CHAMBER SPLIT PROCESS FOR LED MANUFACTURING 审中-公开
标题翻译：用于LED制造的MOCVD单室分离工艺
公开(公告)号：WO2010129183A2
公开(公告)日：2010-11-11
申请号：PCT/US2010032032
申请日：2010-04-22
申请人： APPLIED MATERIALS INC , KRYLIOUK OLGA
发明人： KRYLIOUK OLGA
IPC分类号： H01L33/02
CPC分类号： C23C16/303 , C23C16/4405 , C23C16/45563 , C23C16/45574 , H01L21/0237 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： In one embodiment a method for fabricating a compound nitride semiconductor device comprising positioning one or more substrates on a susceptor in a processing region of a metal organic chemical vapor deposition (MOCVD) chamber comprising a showerhead, depositing a gallium nitride layer over the substrate with a thermal chemical-vapor-deposition process within the MOCVD chamber by flowing a first gallium containing precursor and a first nitrogen containing precursor through the showerhead into the MOCVD chamber, removing the one or more substrates from the MOCVD chamber without exposing the one or more substrates to atmosphere, flowing a chlorine gas into the processing chamber to remove contaminants from the showerhead, transferring the one or more substrates into the MOCVD chamber after removing contaminants from the showerhead, and depositing an InGaN layer over the GaN layer with a thermal chemical-vapor-deposition process within the MOCVD chamber is provided.
摘要翻译：在一个实施例中，一种制造复合氮化物半导体器件的方法，包括在包括喷头的金属有机化学气相沉积（MOCVD）室的处理区域中的基座上放置一个或多个衬底，在衬底上沉积氮化镓层通过将第一含镓前体和第一含氮前体通过喷头喷射到MOCVD室中，在MOCVD室内的热化学气相沉积工艺，从MOCVD室中移除一个或多个基板，而不将一个或多个基板暴露于将氯气流入处理室以从喷头去除污染物，在从喷头中除去污染物之后将一个或多个基板转移到MOCVD室中，并且在GaN层上沉积具有热化学气相沉积的InGaN层，提供MOCVD室内的沉积工艺。

6. 发明申请

WO2010124261A2 SUBSTRATE PRETREATMENT FOR SUBSEQUENT HIGH TEMPERATURE GROUP III DEPOSITIONS 审中-公开
标题翻译：用于后续高温组III沉积物的基板预处理
公开(公告)号：WO2010124261A2
公开(公告)日：2010-10-28
申请号：PCT/US2010032313
申请日：2010-04-23
申请人： APPLIED MATERIALS INC , MELNIK YURIY , KRYLIOUK OLGA , KOJIRI HIDEHIRO , ISHIKAWA TETSUYA
发明人： MELNIK YURIY , KRYLIOUK OLGA , KOJIRI HIDEHIRO , ISHIKAWA TETSUYA
IPC分类号： H01L21/302 , H01L21/20 , H01L33/02 , H01S5/30
CPC分类号： H01L21/02658 , C23C16/0272 , C23C16/301 , C30B25/186 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/0254
摘要： Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One embodiment of the present invention comprises pre-treating the aluminum oxide containing substrate by exposing a surface of the aluminum oxide containing substrate to a pretreatment gas mixture, wherein the pretreatment gas mixture comprises ammonia (NH3) and a halogen gas.
摘要翻译：本发明的实施例涉及用于制造诸如发光二极管（LED）或激光二极管（LD）的器件的衬底的预处理的设备和方法。本发明的一个实施方案包括通过将含氧化铝的衬底的表面暴露于预处理气体混合物来预处理含氧化铝的衬底，其中预处理气体混合物包含氨（NH 3）和卤素气体。

7. 发明申请

WO2010118293A3 HVPE CHAMBER HARDWARE 审中-公开
公开(公告)号：WO2010118293A3
公开(公告)日：2010-10-14
申请号：PCT/US2010/030492
申请日：2010-04-09
申请人： APPLIED MATERIALS, INC. , ISHIKAWA, Tetsuya , QUACH, David, H. , CHANG, Anzhong , KRYLIOUK, Olga , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
发明人： ISHIKAWA, Tetsuya , QUACH, David, H. , CHANG, Anzhong , KRYLIOUK, Olga , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
IPC分类号： H01L21/20 , H01L33/02
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

8. 发明申请

WO2012122365A3 MOCVD FABRICATION OF GROUP III-NITRIDE MATERIALS USING IN-SITU GENERATED HYDRAZINE OR FRAGMENTS THERE FROM 审中-公开
公开(公告)号：WO2012122365A3
公开(公告)日：2012-09-13
申请号：PCT/US2012/028253
申请日：2012-03-08
申请人： APPLIED MATERIALS, INC. , BROWN, Karl , GRIFFIN, Kevin , BOUR, David , KRYLIOUK, Olga
发明人： BROWN, Karl , GRIFFIN, Kevin , BOUR, David , KRYLIOUK, Olga
IPC分类号： H01L21/205 , H01L21/318
摘要： The metal-organic chemical vapor deposition (MOCVD) fabrication of group III-nitride materials using in-situ generated hydrazine or fragments there from is described. For example, a method of fabricating a group III-nitride material includes forming hydrazine in an in-situ process. The hydrazine, or fragments there from, is reacted with a group ΙΠ precursor in a metal-organic chemical vapor deposition (MOCVD) chamber. From the reacting, a group III-nitride layer is formed above a substrate.

9. 发明申请

WO2011106215A2 GROWTH OF GROUP III-V MATERIAL LAYERS BY SPATIALLY CONFINED EPITAXY 审中-公开
标题翻译：第III-V组材料层的增长由空间限制的外延
公开(公告)号：WO2011106215A2
公开(公告)日：2011-09-01
申请号：PCT/US2011/025063
申请日：2011-02-16
申请人： APPLIED MATERIALS, INC. , SU, Jie , KRYLIOUK, Olga
发明人： SU, Jie , KRYLIOUK, Olga
IPC分类号： H01L33/20 , H01L33/16 , H01L21/20
CPC分类号： H01L21/02502 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L21/0265
摘要： Techniques for crack- free growth of GaN, and related, films on larger- size substrates via spatially confined epitaxy are described.
摘要翻译：描述了通过空间限制外延在大尺寸基板上无GaN生长的技术和相关的膜。

10. 发明申请

WO2011011532A3 HOLLOW CATHODE SHOWERHEAD 审中-公开
标题翻译： HOLLOW CATHODE淋浴
公开(公告)号：WO2011011532A3
公开(公告)日：2011-04-28
申请号：PCT/US2010042773
申请日：2010-07-21
申请人： APPLIED MATERIALS INC , QUACH DAVID , ISHIKAWA TETSUYA , KRYLIOUK OLGA , BURROWS BRIAN , TAM ALEXANDER , POON TZE , CHANG ANZHONG
发明人： QUACH DAVID , ISHIKAWA TETSUYA , KRYLIOUK OLGA , BURROWS BRIAN , TAM ALEXANDER , POON TZE , CHANG ANZHONG
IPC分类号： H01L21/205
CPC分类号： H01J37/32422 , C23C16/452 , C23C16/45565 , C23C16/45574 , C30B25/105 , C30B25/14 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32596 , H01J2237/2001
摘要： Embodiments of the present invention provide method and apparatus for performing metal HVPE or MOCVD process using radicals from a plasma. One embodiment of the present invention provides a processing chamber having a gas distribution assembly configured to generate a plasma and provide one or more radical species to a processing volume while shielding electrical field of the plasma from the processing volume. In one embodiment the gas distribution assembly has a plurality of passages defined by a bore connected to a cone, wherein the aspect ratio of the bore is adjusted to allow passage of radicals in the plasma and retain the electrical field of the plasma.
摘要翻译：本发明的实施例提供了使用来自等离子体的自由基进行金属HVPE或MOCVD工艺的方法和装置。本发明的一个实施方案提供了一种处理室，其具有配置成产生等离子体并且将一种或多种自由基物质提供给处理体积的气体分配组件，同时屏蔽等离子体与处理体积的电场。在一个实施例中，气体分配组件具有由连接到锥体的孔限定的多个通道，其中调节孔的纵横比以允许等离子体中的自由基通过并保持等离子体的电场。

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