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1. 发明申请

WO2011133304A3 GROUP III-NITRIDE N-TYPE DOPING 审中-公开
标题翻译： III类氮化物N型掺杂
公开(公告)号：WO2011133304A3
公开(公告)日：2012-03-29
申请号：PCT/US2011030603
申请日：2011-03-30
申请人： APPLIED MATERIALS INC , MELNIK YURIY , KRYLIOUK OLGA , CHEN LU , KOJIRI HIDEHIRO , TETSUYA ISHIKAWA
发明人： MELNIK YURIY , KRYLIOUK OLGA , CHEN LU , KOJIRI HIDEHIRO , TETSUYA ISHIKAWA
IPC分类号： H01L21/20 , H01L21/205 , H01L33/32 , H01L33/34
CPC分类号： H01L21/2233 , C23C16/30 , C23C16/303 , C30B25/02 , C30B29/403 , H01L21/67115 , H01L21/68764 , H01L21/68771 , H01L33/007 , H01L33/325
摘要： A method for N-type doping a group Ill-nitride film is disclosed. A silicon (Si) dopant source in a delivery line is coupled with a reaction chamber configured to form the group Ill-nitride film. A chlorine-containing species is added to the Si dopant source in the delivery line to form a Si-doped group Ill-nitride film in the reaction chamber.
摘要翻译：公开了一种用于N型掺杂III族氮化物膜的方法。输送管线中的硅（Si）掺杂剂源被配置成形成III族氮化物膜的反应室。在输送管线中的Si掺杂剂源中加入含氯物质，以在反应室中形成Si掺杂的III族氮化物膜。

2. 发明申请

WO2011009093A2 A METHOD OF FORMING A GROUP III-NITRIDE CRYSTALLINE FILM ON A PATTERNED SUBSTRATE BY HYDRIDE VAPOR PHASE EPITAXY (HVPE) 审中-公开
标题翻译：通过氢化物气相外延（HVPE）在图案化基板上形成III族氮化物结晶膜的方法
公开(公告)号：WO2011009093A2
公开(公告)日：2011-01-20
申请号：PCT/US2010/042351
申请日：2010-07-16
申请人： APPLIED MATERIALS, INC. , KRYLIOUK, Olga , MELNIK, Yuriy , KOJIRI, Hidehiro , ISHIKAWA, Tetsuya
发明人： KRYLIOUK, Olga , MELNIK, Yuriy , KOJIRI, Hidehiro , ISHIKAWA, Tetsuya
IPC分类号： H01L21/20 , H01L33/02
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/04 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/22
摘要： A method of depositing a high quality low defect single crystalline Group Ill-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group Ill-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group Ill-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.
摘要翻译：一种沉积高质量低缺陷单晶III族氮化物膜的方法。提供具有多个特征的图案化衬底，其中倾斜侧壁被空间隔开。通过氢化物气相外延（HVPE）工艺在图案化衬底上沉积III族氮化物膜。 HVPE沉积工艺形成在特征之间的空间中具有第一晶体取向并且在倾斜侧壁上具有第二不同晶体取向的III族氮化物膜。空间中的第一个晶体取向随后在侧壁上过度扩大第二晶体取向，并且在该过程中翻转并终止在第一晶体取向中形成的踩踏位错。

3. 发明申请

WO2010124261A2 SUBSTRATE PRETREATMENT FOR SUBSEQUENT HIGH TEMPERATURE GROUP III DEPOSITIONS 审中-公开
标题翻译：用于后续高温组III沉积物的基板预处理
公开(公告)号：WO2010124261A2
公开(公告)日：2010-10-28
申请号：PCT/US2010032313
申请日：2010-04-23
申请人： APPLIED MATERIALS INC , MELNIK YURIY , KRYLIOUK OLGA , KOJIRI HIDEHIRO , ISHIKAWA TETSUYA
发明人： MELNIK YURIY , KRYLIOUK OLGA , KOJIRI HIDEHIRO , ISHIKAWA TETSUYA
IPC分类号： H01L21/302 , H01L21/20 , H01L33/02 , H01S5/30
CPC分类号： H01L21/02658 , C23C16/0272 , C23C16/301 , C30B25/186 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/0254
摘要： Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One embodiment of the present invention comprises pre-treating the aluminum oxide containing substrate by exposing a surface of the aluminum oxide containing substrate to a pretreatment gas mixture, wherein the pretreatment gas mixture comprises ammonia (NH3) and a halogen gas.
摘要翻译：本发明的实施例涉及用于制造诸如发光二极管（LED）或激光二极管（LD）的器件的衬底的预处理的设备和方法。本发明的一个实施方案包括通过将含氧化铝的衬底的表面暴露于预处理气体混合物来预处理含氧化铝的衬底，其中预处理气体混合物包含氨（NH 3）和卤素气体。

4. 发明申请

WO2012162197A3 METHODS FOR IMPROVED GROWTH OF GROUP III NITRIDE SEMICONDUCTORS 审中-公开
公开(公告)号：WO2012162197A3
公开(公告)日：2012-11-29
申请号：PCT/US2012/038730
申请日：2012-05-18
申请人： APPLIED MATERIALS, INC. , MELNIK, Yuriy , CHEN, Lu , KOJIRI, Hidehiro
发明人： MELNIK, Yuriy , CHEN, Lu , KOJIRI, Hidehiro
IPC分类号： H01L21/318 , H01L21/205
摘要： Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.

5. 发明申请

WO2012071302A2 INTERCHANGEABLE PUMPING RINGS TO CONTROL PATH OF PROCESS GAS FLOW 审中-公开
标题翻译：用于控制过程气体流动路径的可互换泵送环
公开(公告)号：WO2012071302A2
公开(公告)日：2012-05-31
申请号：PCT/US2011/061596
申请日：2011-11-21
申请人： APPLIED MATERIALS, INC. , NGUYEN, Tuan, Anh , QUACH, David, H. , SHEN, Kuan-Chien , DUBOUST, Alain , KOJIRI, Hidehiro , HSU, Wei-Yung
发明人： NGUYEN, Tuan, Anh , QUACH, David, H. , SHEN, Kuan-Chien , DUBOUST, Alain , KOJIRI, Hidehiro , HSU, Wei-Yung
IPC分类号： H01L21/205 , C23C16/455
CPC分类号： C23C16/4412 , C23C16/45565 , C23C16/4584
摘要： Apparatus and methods for forming metal nitride films using a processing chamber are provided. The method comprises loading multiple substrates onto a substrate support assembly of the processing chamber, wherein the substrate support is in a loading position during the loading multiple substrates and moving the substrate support from the loading position upwards to a processing position, wherein the multiple substrates are positioned above a first opening for exhausting process gases form the processing chamber, and flowing process gases comprising a metal containing precursor and a nitrogen containing precursor perpendicular to the surfaces of the multiple substrates to form a metal nitride film on the multiple substrates, wherein after contacting the surfaces of the multiple substrates, the process gases flow across the surfaces of the multiple substrates and down toward the first opening.
摘要翻译：提供了使用处理室形成金属氮化物膜的设备和方法。该方法包括将多个基板装载到处理腔室的基板支撑组件上，其中基板支撑件在装载多个基板期间处于装载位置并且将基板支架从装载位置向上移动到处理位置，其中多个基板是其位于第一开口的上方，用于从处理室中排出处理气体;以及流动处理气体，其包括含金属前体和垂直于所述多个基板的表面的含氮前体以在所述多个基板上形成金属氮化物膜，其中在接触多个基板的表面，处理气体流过多个基板的表面并向下流向第一开口。

6. 发明申请

WO2011009093A3 A METHOD OF FORMING A GROUP III-NITRIDE CRYSTALLINE FILM ON A PATTERNED SUBSTRATE BY HYDRIDE VAPOR PHASE EPITAXY (HVPE) 审中-公开
标题翻译：通过氢化物蒸气相外延（HVPE）在形成图案的基底上形成III-氮化物晶体膜的方法
公开(公告)号：WO2011009093A3
公开(公告)日：2011-04-28
申请号：PCT/US2010042351
申请日：2010-07-16
申请人： APPLIED MATERIALS INC , KRYLIOUK OLGA , MELNIK YURIY , KOJIRI HIDEHIRO , ISHIKAWA TETSUYA
发明人： KRYLIOUK OLGA , MELNIK YURIY , KOJIRI HIDEHIRO , ISHIKAWA TETSUYA
IPC分类号： H01L21/20 , H01L33/02
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/04 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/22
摘要： A method of depositing a high quality low defect single crystalline Group Ill-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group Ill-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group Ill-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.
摘要翻译：沉积高质量低缺陷单晶III族氮化物膜的方法。提供具有多个特征的图案化衬底，其具有由空间分开的倾斜侧壁。通过在图案化衬底上的氢化物气相外延（HVPE）工艺沉积氮化钛氮化物膜。 HVPE沉积工艺在特征之间的空间中形成具有第一晶体取向的III族氮化物膜，并且在倾斜的侧壁上形成第二不同的晶体取向。空间中的第一晶体取向随后在侧壁上过度生长第二晶体取向，并且在该过程中翻转并终止在第一晶体取向中形成的踩踏位错。

7. 发明申请

WO2010127156A3 METHOD OF FORMING IN-SITU PRE-GAN DEPOSITION LAYER IN HVPE 审中-公开
标题翻译：在HVPE中形成原位预沉积层的方法
公开(公告)号：WO2010127156A3
公开(公告)日：2011-02-24
申请号：PCT/US2010033030
申请日：2010-04-29
申请人： APPLIED MATERIALS INC , MELNIK YURIY , KOJIRI HIDEHIRO , KRYLIOUK OLGA , ISHIKAWA TETSUYA
发明人： MELNIK YURIY , KOJIRI HIDEHIRO , KRYLIOUK OLGA , ISHIKAWA TETSUYA
IPC分类号： H01L21/205 , H01L33/02
CPC分类号： C23C16/4488 , C23C16/303 , C23C16/45523 , C30B25/02 , C30B29/403
摘要： A method and apparatus is provided for preparing a substrate for forming electronic devices incorporating III/V compound semiconductors. Elemental halogen gases, hydrogen halide gases, or other halogen or halide gases, are contacted with liquid or solid group III metals to form precursors which are reacted with nitrogen sources to deposit a nitride buffer layer on the substrate. The buffer layer, which may be a transition layer, may incorporate more than one group III metal, and may be deposited with amorphous or crystalline morphology. An amorphous layer may be partially or fully recrystallized by thermal treatment. Instead of a layer, a plurality of discrete nucleation sites may be formed, whose size, density, and distribution may be controlled. The nitrogen source may include reactive nitrogen compounds as well as active nitrogen from a remote plasma source. The composition of the buffer or transition layer may also vary with depth according to a desired profile.
摘要翻译：提供了一种用于制备用于形成结合III / V化合物半导体的电子器件的衬底的方法和装置。元素卤素气体，卤化氢气体或其它卤素或卤化物气体与液体或固体III族金属接触以形成与氮源反应以在衬底上沉积氮化物缓冲层的前体。可以是过渡层的缓冲层可以结合多于一个III族金属，并且可以以无定形或结晶形态沉积。非晶层可以通过热处理部分或完全重结晶。代替层，可以形成多个离散的成核位点，其尺寸，密度和分布可以被控制。氮源可以包括反应性氮化合物以及来自远程等离子体源的活性氮。缓冲层或过渡层的组成也可根据所需的轮廓随深度而变化。

8. 发明申请

WO2010127156A2 METHOD OF FORMING IN-SITU PRE-GAN DEPOSITION LAYER IN HVPE 审中-公开
标题翻译：在HVPE中形成原位预沉积层的方法
公开(公告)号：WO2010127156A2
公开(公告)日：2010-11-04
申请号：PCT/US2010/033030
申请日：2010-04-29
申请人： APPLIED MATERIALS, INC. , MELNIK, Yuriy , KOJIRI, Hidehiro , KRYLIOUK, Olga , ISHIKAWA, Tetsuya
发明人： MELNIK, Yuriy , KOJIRI, Hidehiro , KRYLIOUK, Olga , ISHIKAWA, Tetsuya
IPC分类号： H01L21/205 , H01L33/02
CPC分类号： C23C16/4488 , C23C16/303 , C23C16/45523 , C30B25/02 , C30B29/403
摘要： A method and apparatus is provided for preparing a substrate for forming electronic devices incorporating III/V compound semiconductors. Elemental halogen gases, hydrogen halide gases, or other halogen or halide gases, are contacted with liquid or solid group III metals to form precursors which are reacted with nitrogen sources to deposit a nitride buffer layer on the substrate. The buffer layer, which may be a transition layer, may incorporate more than one group III metal, and may be deposited with amorphous or crystalline morphology. An amorphous layer may be partially or fully recrystallized by thermal treatment. Instead of a layer, a plurality of discrete nucleation sites may be formed, whose size, density, and distribution may be controlled. The nitrogen source may include reactive nitrogen compounds as well as active nitrogen from a remote plasma source. The composition of the buffer or transition layer may also vary with depth according to a desired profile.
摘要翻译：提供了一种用于制备用于形成结合III / V化合物半导体的电子器件的衬底的方法和装置。元素卤素气体，卤化氢气体或其它卤素或卤化物气体与液体或固体III族金属接触以形成与氮源反应以在衬底上沉积氮化物缓冲层的前体。可以是过渡层的缓冲层可以结合多于一个III族金属，并且可以以无定形或结晶形态沉积。非晶层可以通过热处理部分或完全重结晶。代替层，可以形成多个离散的成核位点，其尺寸，密度和分布可以被控制。氮源可以包括反应性氮化合物以及来自远程等离子体源的活性氮。缓冲层或过渡层的组成也可根据所需的轮廓随深度而变化。

9. 发明申请

WO2010014399A2 CHAMBER PLASMA-CLEANING PROCESS SCHEME 审中-公开
标题翻译：室内等离子清洗工艺方案
公开(公告)号：WO2010014399A2
公开(公告)日：2010-02-04
申请号：PCT/US2009/050686
申请日：2009-07-15
申请人： APPLIED MATERIALS, INC. , HSIEH, Chang-Lin , CHING, Chi-Hong , KOJIRI, Hidehiro , TSUI, Joshua
发明人： HSIEH, Chang-Lin , CHING, Chi-Hong , KOJIRI, Hidehiro , TSUI, Joshua
IPC分类号： H01L21/3065 , H01L21/304
CPC分类号： B08B7/0035 , H01J37/3244 , H01J37/32449 , H01J37/32862
摘要： A method for plasma-cleaning a chamber in a process tool is described. A substrate is placed on a chuck in a process chamber having a set of contaminants therein. A plasma process is executed in the process chamber to transfer the set of contaminants to the top surface of the substrate. The substrate, having the set of contaminants thereon, is removed from the process chamber.
摘要翻译：描述了用于等离子体清洁处理工具中的腔室的方法。衬底放置在其中具有一组污染物的处理室中的卡盘上。在处理室中执行等离子体处理以将污染物组转移到衬底的顶表面。将其上具有污染物集合的基板从处理室移除。

10. 发明申请

WO2012162196A3 METHODS FOR IMPROVED GROWTH OF GROUP III NITRIDE BUFFER LAYERS 审中-公开
标题翻译：改善III组氮化物缓冲层生长的方法
公开(公告)号：WO2012162196A3
公开(公告)日：2013-01-24
申请号：PCT/US2012038729
申请日：2012-05-18
申请人： APPLIED MATERIALS INC , MELNIK YURIY , CHEN LU , KOJIRI HIDEHIRO
发明人： MELNIK YURIY , CHEN LU , KOJIRI HIDEHIRO
IPC分类号： H01L21/20
CPC分类号： H01L21/02304 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/872
摘要： Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).
摘要翻译：公开了用于生长具有先进的多缓冲层技术的高结晶质量III族氮化物外延层的方法。在一个实施例中，一种方法包括在氢化物气相外延处理系统的处理室中形成在合适的衬底上含有铝的III族氮化物缓冲层。在沉积缓冲层期间，卤化氢或卤素气体流入生长区以抑制均匀的颗粒形成。可以使用含有铝的低温缓冲液（例如AlN，AlGaN）和含有铝的高温缓冲液（例如AlN，AlGaN）的一些组合来改善随后生长的III族氮化物外延层的晶体质量和形态。缓冲液可以沉积在衬底上，或者沉积在另一缓冲液的表面上。附加的缓冲层可以作为III族氮化物层（例如，GaN，AlGaN，AlN）中的中间层添加。

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