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    • 7. 发明申请
    • METHOD OF FORMING IN-SITU PRE-GAN DEPOSITION LAYER IN HVPE
    • 在HVPE中形成原位预沉积层的方法
    • WO2010127156A3
    • 2011-02-24
    • PCT/US2010033030
    • 2010-04-29
    • APPLIED MATERIALS INCMELNIK YURIYKOJIRI HIDEHIROKRYLIOUK OLGAISHIKAWA TETSUYA
    • MELNIK YURIYKOJIRI HIDEHIROKRYLIOUK OLGAISHIKAWA TETSUYA
    • H01L21/205H01L33/02
    • C23C16/4488C23C16/303C23C16/45523C30B25/02C30B29/403
    • A method and apparatus is provided for preparing a substrate for forming electronic devices incorporating III/V compound semiconductors. Elemental halogen gases, hydrogen halide gases, or other halogen or halide gases, are contacted with liquid or solid group III metals to form precursors which are reacted with nitrogen sources to deposit a nitride buffer layer on the substrate. The buffer layer, which may be a transition layer, may incorporate more than one group III metal, and may be deposited with amorphous or crystalline morphology. An amorphous layer may be partially or fully recrystallized by thermal treatment. Instead of a layer, a plurality of discrete nucleation sites may be formed, whose size, density, and distribution may be controlled. The nitrogen source may include reactive nitrogen compounds as well as active nitrogen from a remote plasma source. The composition of the buffer or transition layer may also vary with depth according to a desired profile.
    • 提供了一种用于制备用于形成结合III / V化合物半导体的电子器件的衬底的方法和装置。 元素卤素气体,卤化氢气体或其它卤素或卤化物气体与液体或固体III族金属接触以形成与氮源反应以在衬底上沉积氮化物缓冲层的前体。 可以是过渡层的缓冲层可以结合多于一个III族金属,并且可以以无定形或结晶形态沉积。 非晶层可以通过热处理部分或完全重结晶。 代替层,可以形成多个离散的成核位点,其尺寸,密度和分布可以被控制。 氮源可以包括反应性氮化合物以及来自远程等离子体源的活性氮。 缓冲层或过渡层的组成也可根据所需的轮廓随深度而变化。
    • 8. 发明申请
    • METHOD OF FORMING IN-SITU PRE-GAN DEPOSITION LAYER IN HVPE
    • 在HVPE中形成原位预沉积层的方法
    • WO2010127156A2
    • 2010-11-04
    • PCT/US2010/033030
    • 2010-04-29
    • APPLIED MATERIALS, INC.MELNIK, YuriyKOJIRI, HidehiroKRYLIOUK, OlgaISHIKAWA, Tetsuya
    • MELNIK, YuriyKOJIRI, HidehiroKRYLIOUK, OlgaISHIKAWA, Tetsuya
    • H01L21/205H01L33/02
    • C23C16/4488C23C16/303C23C16/45523C30B25/02C30B29/403
    • A method and apparatus is provided for preparing a substrate for forming electronic devices incorporating III/V compound semiconductors. Elemental halogen gases, hydrogen halide gases, or other halogen or halide gases, are contacted with liquid or solid group III metals to form precursors which are reacted with nitrogen sources to deposit a nitride buffer layer on the substrate. The buffer layer, which may be a transition layer, may incorporate more than one group III metal, and may be deposited with amorphous or crystalline morphology. An amorphous layer may be partially or fully recrystallized by thermal treatment. Instead of a layer, a plurality of discrete nucleation sites may be formed, whose size, density, and distribution may be controlled. The nitrogen source may include reactive nitrogen compounds as well as active nitrogen from a remote plasma source. The composition of the buffer or transition layer may also vary with depth according to a desired profile.
    • 提供了一种用于制备用于形成结合III / V化合物半导体的电子器件的衬底的方法和装置。 元素卤素气体,卤化氢气体或其它卤素或卤化物气体与液体或固体III族金属接触以形成与氮源反应以在衬底上沉积氮化物缓冲层的前体。 可以是过渡层的缓冲层可以结合多于一个III族金属,并且可以以无定形或结晶形态沉积。 非晶层可以通过热处理部分或完全重结晶。 代替层,可以形成多个离散的成核位点,其尺寸,密度和分布可以被控制。 氮源可以包括反应性氮化合物以及来自远程等离子体源的活性氮。 缓冲层或过渡层的组成也可根据所需的轮廓随深度而变化。
    • 10. 发明申请
    • METHODS FOR IMPROVED GROWTH OF GROUP III NITRIDE BUFFER LAYERS
    • 改善III组氮化物缓冲层生长的方法
    • WO2012162196A3
    • 2013-01-24
    • PCT/US2012038729
    • 2012-05-18
    • APPLIED MATERIALS INCMELNIK YURIYCHEN LUKOJIRI HIDEHIRO
    • MELNIK YURIYCHEN LUKOJIRI HIDEHIRO
    • H01L21/20
    • H01L21/02304H01L21/0242H01L21/02458H01L21/02505H01L21/0254H01L21/0262H01L29/2003H01L29/872
    • Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).
    • 公开了用于生长具有先进的多缓冲层技术的高结晶质量III族氮化物外延层的方法。 在一个实施例中,一种方法包括在氢化物气相外延处理系统的处理室中形成在合适的衬底上含有铝的III族氮化物缓冲层。 在沉积缓冲层期间,卤化氢或卤素气体流入生长区以抑制均匀的颗粒形成。 可以使用含有铝的低温缓冲液(例如AlN,AlGaN)和含有铝的高温缓冲液(例如AlN,AlGaN)的一些组合来改善随后生长的III族氮化物外延层的晶体质量和形态。 缓冲液可以沉积在衬底上,或者沉积在另一缓冲液的表面上。 附加的缓冲层可以作为III族氮化物层(例如,GaN,AlGaN,AlN)中的中间层添加。