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1. 发明申请

WO2011044451A3 MULTI-GAS CENTRALLY COOLED SHOWERHEAD DESIGN 审中-公开
标题翻译：多气中央冷却淋浴设计
公开(公告)号：WO2011044451A3
公开(公告)日：2011-09-29
申请号：PCT/US2010051961
申请日：2010-10-08
申请人： APPLIED MATERIALS INC , SONG EDDY , ISHIKAWA TETSUYA
发明人： SONG EDDY , ISHIKAWA TETSUYA
IPC分类号： H01L21/205
CPC分类号： H01L21/67115 , B05B1/18 , C23C16/4411 , C23C16/455 , C23C16/45514 , C23C16/45565 , C23C16/45572 , C23C16/45574 , C23C16/45576 , C30B25/14 , C30B29/403 , H01L21/0254 , H01L21/0262
摘要： A method and apparatus for chemical vapor deposition and/or hydride vapor phase epitaxial deposition are provided. The apparatus generally include a lower bottom plate and an upper bottom plate defining a first plenum. The upper bottom plate and a mid-plate positioned above the upper bottom plate define a heat exchanging channel. The mid-plate and a top plate positioned above the mid-plate define a second plenum. A plurality of gas conduits extend from the second plenum through the heat exchanging channel and the first plenum. The method generally includes flowing a first gas through a first plenum into a processing region, and flowing a second gas through a second plenum into a processing region. A heat exchanging fluid is introduced to a heat exchanging channel disposed between the first plenum and the second plenum. The first gas and the second gas are then reacted to form a film on a substrate.
摘要翻译：提供了用于化学气相沉积和/或氢化物气相外延沉积的方法和装置。该装置通常包括限定第一增压室的下底板和上底板。位于上底板上方的上底板和中间板限定了热交换通道。中间板和位于中间板上方的顶板限定了第二增压室。多个气体导管从第二增压室延伸穿过热交换通道和第一增压室。该方法通常包括使第一气体流过第一气室进入处理区域，并使第二气体通过第二增压室流入处理区域。将热交换流体引入设置在第一增压室和第二增压室之间的热交换通道。然后使第一气体和第二气体反应以在基底上形成膜。

2. 发明申请

WO2010129292A3 CLUSTER TOOL FOR LEDS 审中-公开
标题翻译： LED集群工具
公开(公告)号：WO2010129292A3
公开(公告)日：2011-02-17
申请号：PCT/US2010032597
申请日：2010-04-27
申请人： APPLIED MATERIALS INC , NIJHAWAN SANDEEP , BURROWS BRIAN H , ISHIKAWA TETSUYA , KRYLIOUK OLGA , VASUDEV ANAND , SU JIE , QUACH DAVID H , CHANG ANZHONG , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
发明人： NIJHAWAN SANDEEP , BURROWS BRIAN H , ISHIKAWA TETSUYA , KRYLIOUK OLGA , VASUDEV ANAND , SU JIE , QUACH DAVID H , CHANG ANZHONG , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
IPC分类号： H01L33/00
CPC分类号： H01L21/67109 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67115 , H01L21/67167 , H01L21/67207 , H01L33/007
摘要： The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.
摘要翻译：本发明总体上提供了用于形成LED结构的装置和方法。本发明的一个实施方案提供了一种制备复合氮化物结构的方法，包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的第一层和氮化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二III族元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层第二层通过MOCVD过程。

3. 发明申请

WO2011014822A2 LIGHT EMITTING DIODE WITH ENHANCED QUANTUM EFFICIENCY AND METHOD OF FABRICATION 审中-公开
标题翻译：具有增强量子效率的发光二极管和制造方法
公开(公告)号：WO2011014822A2
公开(公告)日：2011-02-03
申请号：PCT/US2010043993
申请日：2010-07-30
申请人： APPLIED MATERIALS INC , SU JIE , KRYLIOUK OLGA , MELNIK YURIY , KOJIRI HIDEHIRO , CHEN LU , ISHIKAWA TETSUYA
发明人： SU JIE , KRYLIOUK OLGA , MELNIK YURIY , KOJIRI HIDEHIRO , CHEN LU , ISHIKAWA TETSUYA
IPC分类号： H01L33/08 , H01L33/04 , H01L33/06
CPC分类号： H01L33/06 , H01L33/04 , H01L33/325
摘要： One embodiment of a quantum well structure comprises an active region including active layers that comprise quantum wells and barrier layers wherein some or all of the active layers are p type doped. P type doping some or all of the active layers improves the quantum efficiency of III-V compound semiconductor light emitting diodes by locating the position of the P-N junction in the active region of the device thereby enabling the dominant radiative recombination to occur within the active region. In one embodiment, the quantum well structure is fabricated in a cluster tool having a hydride vapor phase epitaxial (HVPE) deposition chamber with a eutectic source alloy. In one embodiment, the indium gallium nitride (InGaN) layer and the magnesium doped gallium nitride (Mg-GaN) or magnesium doped aluminum gallium nitride (Mg-AlGaN) layer are grown in separate chambers by a cluster tool to avoid indium and magnesium cross contamination. Doping of group III-nitrides by hydride vapor phase epitaxy using group III-metal eutectics is also described. In one embodiment, a source is provided for HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the source including a liquid phase mechanical (eutectic) mixture with a group III species. In one embodiment, a method is provided for performing HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the method including using a liquid phase mechanical (eutectic) mixture with a group III species.
摘要翻译：量子阱结构的一个实施例包括有源区，包括有源层，其包括量子阱和阻挡层，其中一些或全部有源层是p型掺杂的。通过将PN结的位置定位在器件的有源区域中，P型掺杂部分或全部有源层提高了III-V族化合物半导体发光二极管的量子效率，由此能够在主动区域内发生主要的辐射复合。在一个实施例中，量子阱结构在具有共晶源合金的氢化物气相外延（HVPE）沉积室的簇工具中制造。在一个实施例中，氮化铟镓（InGaN）层和掺杂镁的氮化镓（Mg-GaN）或镁掺杂的氮化铝镓（Mg-AlGaN）层通过簇工具在分开的室中生长以避免铟和镁的交叉污染。还描述了使用III族金属共晶体通过氢化物气相外延掺杂的III族氮化物。在一个实施例中，提供了用于HVPE沉积p型或n型III族氮化物外延膜的源，该源包括具有III族物质的液相机械（共晶）混合物。在一个实施例中，提供了一种用于执行p型或n型III族氮化物外延膜的HVPE沉积的方法，该方法包括使用具有III族物质的液相机械（共晶）混合物。

4. 发明申请

WO2011011532A2 HOLLOW CATHODE SHOWERHEAD 审中-公开
标题翻译：空心阴茎喷头
公开(公告)号：WO2011011532A2
公开(公告)日：2011-01-27
申请号：PCT/US2010042773
申请日：2010-07-21
申请人： APPLIED MATERIALS INC , QUACH DAVID , ISHIKAWA TETSUYA , KRYLIOUK OLGA , BURROWS BRIAN , TAM ALEXANDER , POON TZE , CHANG ANZHONG
发明人： QUACH DAVID , ISHIKAWA TETSUYA , KRYLIOUK OLGA , BURROWS BRIAN , TAM ALEXANDER , POON TZE , CHANG ANZHONG
IPC分类号： H01L21/205
CPC分类号： H01J37/32422 , C23C16/452 , C23C16/45565 , C23C16/45574 , C30B25/105 , C30B25/14 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32596 , H01J2237/2001
摘要： Embodiments of the present invention provide method and apparatus for performing metal HVPE or MOCVD process using radicals from a plasma. One embodiment of the present invention provides a processing chamber having a gas distribution assembly configured to generate a plasma and provide one or more radical species to a processing volume while shielding electrical field of the plasma from the processing volume. In one embodiment the gas distribution assembly has a plurality of passages defined by a bore connected to a cone, wherein the aspect ratio of the bore is adjusted to allow passage of radicals in the plasma and retain the electrical field of the plasma.
摘要翻译：本发明的实施例提供使用来自等离子体的基团来执行金属HVPE或MOCVD工艺的方法和装置。本发明的一个实施例提供了一种具有气体分配组件的处理腔室，该气体分配组件被配置为产生等离子体并且将一种或多种自由基物质提供给处理体积，同时屏蔽来自处理体积的等离子体的电场。在一个实施例中，气体分配组件具有由连接到锥体的孔限定的多个通道，其中孔的纵横比被调节成允许等离子体中的自由基通过并保持等离子体的电场。

5. 发明申请

WO2009007852A3 MULTIPOTENT/PLURIPOTENT CELLS AND METHODS 审中-公开
标题翻译：多功能/多功能细胞和方法
公开(公告)号：WO2009007852A3
公开(公告)日：2009-08-20
申请号：PCT/IB2008002540
申请日：2008-06-13
申请人： IZUMI BIO INC , SAKURADA KAZUHIRO , MASAKI HIDEKI , ISHIKAWA TETSUYA , TAKAHASHI SHUNICHI
发明人： SAKURADA KAZUHIRO , MASAKI HIDEKI , ISHIKAWA TETSUYA , TAKAHASHI SHUNICHI
IPC分类号： C12N5/074
CPC分类号： C12N15/85 , C12N5/0696 , C12N2501/602 , C12N2501/603 , C12N2501/604 , C12N2501/606 , C12N2510/00 , C12N2799/027
摘要： Described herein are multipotent stem cells, e.g., human and other mammalian pluripotent stem cells, and related methods.
摘要翻译：本文描述了多能干细胞，例如人和其他哺乳动物多能干细胞以及相关方法。

6. 发明申请

WO2009007852A2 MULTIPOTENT/PLURIPOTENT CELLS AND METHODS 审中-公开
标题翻译：多重/多核细胞和方法
公开(公告)号：WO2009007852A2
公开(公告)日：2009-01-15
申请号：PCT/IB2008/002540
申请日：2008-06-13
申请人： IZUMI BIO, INC , SAKURADA, Kazuhiro , MASAKI, Hideki , ISHIKAWA, Tetsuya , TAKAHASHI, Shunichi
发明人： SAKURADA, Kazuhiro , MASAKI, Hideki , ISHIKAWA, Tetsuya , TAKAHASHI, Shunichi
IPC分类号： C12N5/08
CPC分类号： C12N15/85 , C12N5/0696 , C12N2501/602 , C12N2501/603 , C12N2501/604 , C12N2501/606 , C12N2510/00 , C12N2799/027
摘要： Described herein are multipotent stem cells, e.g., human and other mammalian pluripotent stem cells, and related methods.
摘要翻译：本文描述的是多能干细胞，例如人和其他哺乳动物多能干细胞，以及相关方法。

7. 发明申请

WO2006069256A3 INTEGRATED THERMAL UNIT 审中-公开
公开(公告)号：WO2006069256A3
公开(公告)日：2006-06-29
申请号：PCT/US2005/046637
申请日：2005-12-21
申请人： SOKUDO CO., LTD. , QUACH, David, H. , SALINAS, Martin, Jeff , ISHIKAWA, Tetsuya
发明人： QUACH, David, H. , SALINAS, Martin, Jeff , ISHIKAWA, Tetsuya
IPC分类号： H05B3/68 , F27B5/00 , F27B5/14 , A21B2/00 , F26B19/00 , C23C16/00 , F28F7/00
摘要： An integrated thermal unit (10) comprising a bake plate (20) configured to heat a substrate supported on a surface of the bake plate; a chill plate (30) configured to cool a substrate supported on a surface of the chill plate; and a substrate transfer shuttle (18) configured to transfer substrates from the bake plate to the cool plated, where in the substrate transfer shuttle has temperature controlled substrate holding surface that is capable of cooling a substrate heated by the bake plate.

8. 发明申请

WO1997009318A1 PYRIMIDINE DERIVATIVES 审中-公开
标题翻译：吡嗪衍生物
公开(公告)号：WO1997009318A1
公开(公告)日：1997-03-13
申请号：PCT/JP1996002494
申请日：1996-09-04
申请人： KOWA CO., LTD. , HIRATA, Mitsuteru , DEUSHI, Takeo , TAKAHASHI, Yoshio , TAMURA, Masahiro , OHSHIMA, Takeshi , ODA, Toshiaki , ISHIKAWA, Tetsuya , SONOKI, Hiroyuki , SHIRATSUCHI, Masami
发明人： KOWA CO., LTD.
IPC分类号： C07D239/48
CPC分类号： C07D239/52
摘要： Pyrimidine derivatives represented by general formula (1) or their salts and a drug comprising the same as the active ingredient, wherein R represents hydroxy, lower alkoxy, phenyloxy, aralkyloxy or -NR R wherein R and R represent each hydrogen, hydroxy, lower alkyl, phenyl, aralkyl, or a heterocyclic group; X represents oxygen or N-R wherein R represents lower alkyl, phenyl, formyl or lower alkoxycarbonyl; m is 2 or 3; and n is 1 or 2. The compounds have a potent inhibitory activity on endothelins having a potent vasoconstrictor activity and are useful in the treatment of circulatory disorders, etc.
摘要翻译：由通式（1）表示的嘧啶衍生物或其盐和包含与活性成分相同的药物，其中R 1表示羟基，低级烷氧基，苯氧基，芳烷氧基或-NR 2 R 3， 2>和R 3表示各自的氢，羟基，低级烷基，苯基，芳烷基或杂环基; X表示氧或N-R 4，其中R 4表示低级烷基，苯基，甲酰基或低级烷氧基羰基; m为2或3; 并且n为1或2.该化合物对具有有效的血管收缩剂活性的内皮素具有有效的抑制活性，并且可用于治疗循环障碍等。

9. 发明申请

WO2010129292A4 CLUSTER TOOL FOR LEDS 审中-公开
标题翻译： LED的集群工具
公开(公告)号：WO2010129292A4
公开(公告)日：2011-03-31
申请号：PCT/US2010032597
申请日：2010-04-27
申请人： APPLIED MATERIALS INC , NIJHAWAN SANDEEP , BURROWS BRIAN H , ISHIKAWA TETSUYA , KRYLIOUK OLGA , VASUDEV ANAND , SU JIE , QUACH DAVID H , CHANG ANZHONG , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
发明人： NIJHAWAN SANDEEP , BURROWS BRIAN H , ISHIKAWA TETSUYA , KRYLIOUK OLGA , VASUDEV ANAND , SU JIE , QUACH DAVID H , CHANG ANZHONG , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
IPC分类号： H01L33/00
CPC分类号： H01L21/67109 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67115 , H01L21/67167 , H01L21/67207 , H01L33/007
摘要： The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.
摘要翻译：本发明通常提供用于形成LED结构的装置和方法。本发明的一个实施例提供了一种用于制造化合物氮化物结构的方法，包括：通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素和氮的第一层或氮化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中的第一层上形成包括第二III族元素和氮的第二层，并且形成包含第三III族元素和氮上的第三层第二层采用MOCVD工艺。

10. 发明申请

WO2011035041A2 SUBSTRATE TRANSFER MECHANISM WITH PREHEATING FEATURES 审中-公开
标题翻译：具有预热功能的基板传输机制
公开(公告)号：WO2011035041A2
公开(公告)日：2011-03-24
申请号：PCT/US2010/049144
申请日：2010-09-16
申请人： APPLIED MATERIALS, INC. , ISHIKAWA, Tetsuya , PANG, Lily L. , PHAM, Quyen D. , OLGADO, Donald J.K.
发明人： ISHIKAWA, Tetsuya , PANG, Lily L. , PHAM, Quyen D. , OLGADO, Donald J.K.
IPC分类号： H01L21/677 , B65G49/07 , B25J15/00 , H05B3/02
CPC分类号： H01L21/67196 , H01L21/67103 , H01L21/67742 , H01L21/68707
摘要： Embodiments of the present invention provide apparatus and method for heating one or more substrates during transfer. One embodiment provides a robot blade assembly for supporting a substrate or a substrate carrier thereon. The robot blade assembly comprises a base plate, an induction heating assembly disposed on the base plate, and a top plate disposed above the induction heating assembly. Another embodiment provides an induction heating assembly disposed over a transfer chamber having a substrate transfer mechanism disposed therein.
摘要翻译：本发明的实施例提供了用于在传送期间加热一个或多个衬底的装置和方法。一个实施例提供了用于在其上支撑衬底或衬底载体的机器人刀片组件。机器人刀片组件包括基板，设置在基板上的感应加热组件和设置在感应加热组件上方的顶板。另一个实施例提供了一种感应加热组件，其设置在其中设置有基板传送机构的传送室上方。

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