专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2012162195A3 METHODS FOR PRETREATMENT OF GROUP III-NITRIDE DEPOSITIONS 审中-公开
标题翻译：用于预处理III-NITRIDE沉积物的方法
公开(公告)号：WO2012162195A3
公开(公告)日：2013-03-21
申请号：PCT/US2012038727
申请日：2012-05-18
申请人： APPLIED MATERIALS INC , MELNIK YURIY , CHEN LU , KOJIRI HIDEHIRO
发明人： MELNIK YURIY , CHEN LU , KOJIRI HIDEHIRO
IPC分类号： H01L21/20 , H01L33/00 , H01L33/32
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02458 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： Embodiments of the present disclosure relate to methods for pretreatment of substrates and group Ill-nitride layers for manufacturing devices such as light emitting diodes (LEDs), laser diodes (LDs) or power electronic devices. One embodiment of the present disclosure provides a method including providing one or more substrates having an aluminum containing surface in a processing chamber and exposing a surface of each of the one or more substrates having an aluminum containing surface to a pretreatment gas mixture to form a pretreated surface. The pretreatment gas mixture includes ammonia (NH3), an aluminum halide gas (e.g., AICI3, AICI) and an etchant containing gas that includes a halogen gas (e.g., CI2) or hydrogen halide gas (e.g., HCI).
摘要翻译：本公开的实施例涉及用于预处理衬底和III族氮化物层的方法，用于制造诸如发光二极管（LED），激光二极管（LD）或功率电子器件的器件。本公开的一个实施方案提供了一种方法，包括在处理室中提供具有含铝表面的一个或多个基材，并将具有含铝表面的一个或多个基材中的每一个的表面暴露于预处理气体混合物以形成预处理表面。预处理气体混合物包括氨（NH 3），卤化铝气体（例如AICI3，AICI）和含有卤素气体（例如，CI2）或卤化氢气体（例如HCl）的含蚀刻剂气体。

2. 发明申请

WO2012162196A2 METHODS FOR IMPROVED GROWTH OF GROUP III NITRIDE BUFFER LAYERS 审中-公开
标题翻译：改善III组氮化物缓冲层生长的方法
公开(公告)号：WO2012162196A2
公开(公告)日：2012-11-29
申请号：PCT/US2012/038729
申请日：2012-05-18
申请人： APPLIED MATERIALS, INC. , MELNIK, Yuriy , CHEN, Lu , KOJIRI, Hidehiro
发明人： MELNIK, Yuriy , CHEN, Lu , KOJIRI, Hidehiro
IPC分类号： H01L21/20
CPC分类号： H01L21/02304 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/872
摘要： Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).
摘要翻译：公开了用于生长具有先进的多缓冲层技术的高结晶质量III族氮化物外延层的方法。在一个实施例中，一种方法包括在氢化物气相外延处理系统的处理室中形成在合适的衬底上含有铝的III族氮化物缓冲层。在沉积缓冲层期间，卤化氢或卤素气体流入生长区以抑制均匀的颗粒形成。可以使用含有铝的低温缓冲液（例如AlN，AlGaN）和含有铝的高温缓冲液（例如AlN，AlGaN）的一些组合来改善随后生长的III族氮化物外延层的晶体质量和形态。缓冲液可以沉积在衬底上，或者沉积在另一缓冲液的表面上。附加的缓冲层可以作为III族氮化物层（例如，GaN，AlGaN，AlN）中的中间层添加。

3. 发明申请

WO2011133304A2 GROUP III-NITRIDE N-TYPE DOPING 审中-公开
标题翻译： III类氮化物N型掺杂
公开(公告)号：WO2011133304A2
公开(公告)日：2011-10-27
申请号：PCT/US2011/030603
申请日：2011-03-30
申请人： APPLIED MATERIALS, INC. , MELNIK, Yuriy , KRYLIOUK, Olga , CHEN, Lu , KOJIRI, Hidehiro , TETSUYA, Ishikawa
发明人： MELNIK, Yuriy , KRYLIOUK, Olga , CHEN, Lu , KOJIRI, Hidehiro , TETSUYA, Ishikawa
IPC分类号： H01L21/20 , H01L21/205 , H01L33/32 , H01L33/34
CPC分类号： H01L21/2233 , C23C16/30 , C23C16/303 , C30B25/02 , C30B29/403 , H01L21/67115 , H01L21/68764 , H01L21/68771 , H01L33/007 , H01L33/325
摘要： Group III-nitride N-type doping techniques are described.
摘要翻译：描述了III族氮化物N型掺杂技术。

4. 发明申请

WO2010118295A3 HVPE PRECURSOR SOURCE HARDWARE 审中-公开
标题翻译： HVPE前驱源硬件
公开(公告)号：WO2010118295A3
公开(公告)日：2011-01-20
申请号：PCT/US2010030496
申请日：2010-04-09
申请人： APPLIED MATERIALS INC , ISHIKAWA TETSUYA , QUACH DAVID H , CHANG ANZHONG , KRYLIOUK OLGA , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
发明人： ISHIKAWA TETSUYA , QUACH DAVID H , CHANG ANZHONG , KRYLIOUK OLGA , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
IPC分类号： H01L21/20
CPC分类号： C30B29/403 , C23C16/34 , C23C16/4401 , C23C16/45565 , C23C16/46 , C30B25/02 , C30B29/406 , Y10T137/479 , Y10T137/4807 , Y10T137/4824 , Y10T137/7504 , Y10T137/8376
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.
摘要翻译：本文公开的实施例通常涉及HVPE室。腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。不同的温度导致气体混合在一起，反应并沉积在基板上，而在室壁上很少或没有沉积。

5. 发明申请

WO2011133304A3 GROUP III-NITRIDE N-TYPE DOPING 审中-公开
标题翻译： III类氮化物N型掺杂
公开(公告)号：WO2011133304A3
公开(公告)日：2012-03-29
申请号：PCT/US2011030603
申请日：2011-03-30
申请人： APPLIED MATERIALS INC , MELNIK YURIY , KRYLIOUK OLGA , CHEN LU , KOJIRI HIDEHIRO , TETSUYA ISHIKAWA
发明人： MELNIK YURIY , KRYLIOUK OLGA , CHEN LU , KOJIRI HIDEHIRO , TETSUYA ISHIKAWA
IPC分类号： H01L21/20 , H01L21/205 , H01L33/32 , H01L33/34
CPC分类号： H01L21/2233 , C23C16/30 , C23C16/303 , C30B25/02 , C30B29/403 , H01L21/67115 , H01L21/68764 , H01L21/68771 , H01L33/007 , H01L33/325
摘要： A method for N-type doping a group Ill-nitride film is disclosed. A silicon (Si) dopant source in a delivery line is coupled with a reaction chamber configured to form the group Ill-nitride film. A chlorine-containing species is added to the Si dopant source in the delivery line to form a Si-doped group Ill-nitride film in the reaction chamber.
摘要翻译：公开了一种用于N型掺杂III族氮化物膜的方法。输送管线中的硅（Si）掺杂剂源被配置成形成III族氮化物膜的反应室。在输送管线中的Si掺杂剂源中加入含氯物质，以在反应室中形成Si掺杂的III族氮化物膜。

6. 发明申请

WO2011009093A2 A METHOD OF FORMING A GROUP III-NITRIDE CRYSTALLINE FILM ON A PATTERNED SUBSTRATE BY HYDRIDE VAPOR PHASE EPITAXY (HVPE) 审中-公开
标题翻译：通过氢化物气相外延（HVPE）在图案化基板上形成III族氮化物结晶膜的方法
公开(公告)号：WO2011009093A2
公开(公告)日：2011-01-20
申请号：PCT/US2010/042351
申请日：2010-07-16
申请人： APPLIED MATERIALS, INC. , KRYLIOUK, Olga , MELNIK, Yuriy , KOJIRI, Hidehiro , ISHIKAWA, Tetsuya
发明人： KRYLIOUK, Olga , MELNIK, Yuriy , KOJIRI, Hidehiro , ISHIKAWA, Tetsuya
IPC分类号： H01L21/20 , H01L33/02
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/04 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/22
摘要： A method of depositing a high quality low defect single crystalline Group Ill-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group Ill-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group Ill-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.
摘要翻译：一种沉积高质量低缺陷单晶III族氮化物膜的方法。提供具有多个特征的图案化衬底，其中倾斜侧壁被空间隔开。通过氢化物气相外延（HVPE）工艺在图案化衬底上沉积III族氮化物膜。 HVPE沉积工艺形成在特征之间的空间中具有第一晶体取向并且在倾斜侧壁上具有第二不同晶体取向的III族氮化物膜。空间中的第一个晶体取向随后在侧壁上过度扩大第二晶体取向，并且在该过程中翻转并终止在第一晶体取向中形成的踩踏位错。

7. 发明申请

WO2010124261A2 SUBSTRATE PRETREATMENT FOR SUBSEQUENT HIGH TEMPERATURE GROUP III DEPOSITIONS 审中-公开
标题翻译：用于后续高温组III沉积物的基板预处理
公开(公告)号：WO2010124261A2
公开(公告)日：2010-10-28
申请号：PCT/US2010032313
申请日：2010-04-23
申请人： APPLIED MATERIALS INC , MELNIK YURIY , KRYLIOUK OLGA , KOJIRI HIDEHIRO , ISHIKAWA TETSUYA
发明人： MELNIK YURIY , KRYLIOUK OLGA , KOJIRI HIDEHIRO , ISHIKAWA TETSUYA
IPC分类号： H01L21/302 , H01L21/20 , H01L33/02 , H01S5/30
CPC分类号： H01L21/02658 , C23C16/0272 , C23C16/301 , C30B25/186 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/0254
摘要： Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One embodiment of the present invention comprises pre-treating the aluminum oxide containing substrate by exposing a surface of the aluminum oxide containing substrate to a pretreatment gas mixture, wherein the pretreatment gas mixture comprises ammonia (NH3) and a halogen gas.
摘要翻译：本发明的实施例涉及用于制造诸如发光二极管（LED）或激光二极管（LD）的器件的衬底的预处理的设备和方法。本发明的一个实施方案包括通过将含氧化铝的衬底的表面暴露于预处理气体混合物来预处理含氧化铝的衬底，其中预处理气体混合物包含氨（NH 3）和卤素气体。

8. 发明申请

WO2010118293A3 HVPE CHAMBER HARDWARE 审中-公开
公开(公告)号：WO2010118293A3
公开(公告)日：2010-10-14
申请号：PCT/US2010/030492
申请日：2010-04-09
申请人： APPLIED MATERIALS, INC. , ISHIKAWA, Tetsuya , QUACH, David, H. , CHANG, Anzhong , KRYLIOUK, Olga , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
发明人： ISHIKAWA, Tetsuya , QUACH, David, H. , CHANG, Anzhong , KRYLIOUK, Olga , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
IPC分类号： H01L21/20 , H01L33/02
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

9. 发明申请

WO2012162197A3 METHODS FOR IMPROVED GROWTH OF GROUP III NITRIDE SEMICONDUCTORS 审中-公开
公开(公告)号：WO2012162197A3
公开(公告)日：2012-11-29
申请号：PCT/US2012/038730
申请日：2012-05-18
申请人： APPLIED MATERIALS, INC. , MELNIK, Yuriy , CHEN, Lu , KOJIRI, Hidehiro
发明人： MELNIK, Yuriy , CHEN, Lu , KOJIRI, Hidehiro
IPC分类号： H01L21/318 , H01L21/205
摘要： Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.

10. 发明申请

WO2011009093A3 A METHOD OF FORMING A GROUP III-NITRIDE CRYSTALLINE FILM ON A PATTERNED SUBSTRATE BY HYDRIDE VAPOR PHASE EPITAXY (HVPE) 审中-公开
标题翻译：通过氢化物蒸气相外延（HVPE）在形成图案的基底上形成III-氮化物晶体膜的方法
公开(公告)号：WO2011009093A3
公开(公告)日：2011-04-28
申请号：PCT/US2010042351
申请日：2010-07-16
申请人： APPLIED MATERIALS INC , KRYLIOUK OLGA , MELNIK YURIY , KOJIRI HIDEHIRO , ISHIKAWA TETSUYA
发明人： KRYLIOUK OLGA , MELNIK YURIY , KOJIRI HIDEHIRO , ISHIKAWA TETSUYA
IPC分类号： H01L21/20 , H01L33/02
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/04 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/22
摘要： A method of depositing a high quality low defect single crystalline Group Ill-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group Ill-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group Ill-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.
摘要翻译：沉积高质量低缺陷单晶III族氮化物膜的方法。提供具有多个特征的图案化衬底，其具有由空间分开的倾斜侧壁。通过在图案化衬底上的氢化物气相外延（HVPE）工艺沉积氮化钛氮化物膜。 HVPE沉积工艺在特征之间的空间中形成具有第一晶体取向的III族氮化物膜，并且在倾斜的侧壁上形成第二不同的晶体取向。空间中的第一晶体取向随后在侧壁上过度生长第二晶体取向，并且在该过程中翻转并终止在第一晶体取向中形成的踩踏位错。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式