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1. 发明申请

WO2010118295A3 HVPE PRECURSOR SOURCE HARDWARE 审中-公开
标题翻译： HVPE前驱源硬件
公开(公告)号：WO2010118295A3
公开(公告)日：2011-01-20
申请号：PCT/US2010030496
申请日：2010-04-09
申请人： APPLIED MATERIALS INC , ISHIKAWA TETSUYA , QUACH DAVID H , CHANG ANZHONG , KRYLIOUK OLGA , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
发明人： ISHIKAWA TETSUYA , QUACH DAVID H , CHANG ANZHONG , KRYLIOUK OLGA , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
IPC分类号： H01L21/20
CPC分类号： C30B29/403 , C23C16/34 , C23C16/4401 , C23C16/45565 , C23C16/46 , C30B25/02 , C30B29/406 , Y10T137/479 , Y10T137/4807 , Y10T137/4824 , Y10T137/7504 , Y10T137/8376
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.
摘要翻译：本文公开的实施例通常涉及HVPE室。腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。不同的温度导致气体混合在一起，反应并沉积在基板上，而在室壁上很少或没有沉积。

2. 发明申请

WO2010129292A3 CLUSTER TOOL FOR LEDS 审中-公开
标题翻译： LED集群工具
公开(公告)号：WO2010129292A3
公开(公告)日：2011-02-17
申请号：PCT/US2010032597
申请日：2010-04-27
申请人： APPLIED MATERIALS INC , NIJHAWAN SANDEEP , BURROWS BRIAN H , ISHIKAWA TETSUYA , KRYLIOUK OLGA , VASUDEV ANAND , SU JIE , QUACH DAVID H , CHANG ANZHONG , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
发明人： NIJHAWAN SANDEEP , BURROWS BRIAN H , ISHIKAWA TETSUYA , KRYLIOUK OLGA , VASUDEV ANAND , SU JIE , QUACH DAVID H , CHANG ANZHONG , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
IPC分类号： H01L33/00
CPC分类号： H01L21/67109 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67115 , H01L21/67167 , H01L21/67207 , H01L33/007
摘要： The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.
摘要翻译：本发明总体上提供了用于形成LED结构的装置和方法。本发明的一个实施方案提供了一种制备复合氮化物结构的方法，包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的第一层和氮化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二III族元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层第二层通过MOCVD过程。

3. 发明申请

WO2010129292A4 CLUSTER TOOL FOR LEDS 审中-公开
标题翻译： LED的集群工具
公开(公告)号：WO2010129292A4
公开(公告)日：2011-03-31
申请号：PCT/US2010032597
申请日：2010-04-27
申请人： APPLIED MATERIALS INC , NIJHAWAN SANDEEP , BURROWS BRIAN H , ISHIKAWA TETSUYA , KRYLIOUK OLGA , VASUDEV ANAND , SU JIE , QUACH DAVID H , CHANG ANZHONG , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
发明人： NIJHAWAN SANDEEP , BURROWS BRIAN H , ISHIKAWA TETSUYA , KRYLIOUK OLGA , VASUDEV ANAND , SU JIE , QUACH DAVID H , CHANG ANZHONG , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
IPC分类号： H01L33/00
CPC分类号： H01L21/67109 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67115 , H01L21/67167 , H01L21/67207 , H01L33/007
摘要： The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.
摘要翻译：本发明通常提供用于形成LED结构的装置和方法。本发明的一个实施例提供了一种用于制造化合物氮化物结构的方法，包括：通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素和氮的第一层或氮化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中的第一层上形成包括第二III族元素和氮的第二层，并且形成包含第三III族元素和氮上的第三层第二层采用MOCVD工艺。

4. 发明申请

WO2010118293A2 HVPE CHAMBER HARDWARE 审中-公开
标题翻译： HVPE室硬件
公开(公告)号：WO2010118293A2
公开(公告)日：2010-10-14
申请号：PCT/US2010030492
申请日：2010-04-09
申请人： APPLIED MATERIALS INC , ISHIKAWA TETSUYA , QUACH DAVID H , CHANG ANZHONG , KRYLIOUK OLGA , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
发明人： ISHIKAWA TETSUYA , QUACH DAVID H , CHANG ANZHONG , KRYLIOUK OLGA , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
IPC分类号： H01L21/20 , H01L33/02
CPC分类号： C30B29/403 , C23C16/34 , C23C16/4401 , C23C16/45565 , C23C16/46 , C30B25/02 , C30B29/406 , Y10T137/479 , Y10T137/4807 , Y10T137/4824 , Y10T137/7504 , Y10T137/8376
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.
摘要翻译：本文公开的实施例通常涉及HVPE室。腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。不同的温度导致气体混合在一起，反应并沉积在基板上，在室壁上很少或没有沉积。

5. 发明申请

WO2004094702A8 MULTI-CHEMISTRY PLATING SYSTEM 审中-公开
标题翻译：多化学镀层系统
公开(公告)号：WO2004094702A8
公开(公告)日：2005-12-29
申请号：PCT/US2004012012
申请日：2004-04-16
申请人： APPLIED MATERIALS INC , YANG MICHAEL X , XI MING , BRITCHER ERIC B , DONOSO BERNARDO , PANG LILY L , SHERMAN SVETLANA , HO HENRY , NGUYEN ANH N , LERNER ALEXANDER N , D AMBRA ALLEN L , SHANMUGASUNDRAM ARULKUMAR , ISHIKAWA TETSUYA , RABINOVICH YEVGENIY , LUBOMIRSKY DMITRY , MOK YEUK-FAI EDWIN , NGUYEN SON T
发明人： YANG MICHAEL X , XI MING , ELLWANGER RUSSELL C , BRITCHER ERIC B , DONOSO BERNARDO , PANG LILY L , SHERMAN SVETLANA , HO HENRY , NGUYEN ANH N , LERNER ALEXANDER N , D AMBRA ALLEN L , SHANMUGASUNDRAM ARULKUMAR , ISHIKAWA TETSUYA , RABINOVICH YEVGENIY , LUBOMIRSKY DMITRY , MOK YEUK-FAI EDWIN , NGUYEN SON T
IPC分类号： B08B3/02 , C25D5/00 , C25D7/12 , C25D17/00 , C25D21/00 , C25D21/08 , H01L21/00 , H01L21/68 , H01L21/683 , H01L21/687 , C25D
CPC分类号： H01L21/67167 , B08B3/02 , C25D5/003 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6719 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.
摘要翻译：本发明的实施方案通常提供电化学电镀系统。所述电镀系统包括基板装载站，所述基板装载站定位成与主机处理平台连通，至少一个位于所述主机上的基板电镀单元，位于所述主机上的至少一个基板斜面清洁单元，以及与主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

6. 发明申请

WO2004094702A3 MULTI-CHEMISTRY PLATING SYSTEM 审中-公开
标题翻译：多化学镀层系统
公开(公告)号：WO2004094702A3
公开(公告)日：2006-11-30
申请号：PCT/US2004012012
申请日：2004-04-16
申请人： APPLIED MATERIALS INC , YANG MICHAEL X , XI MING , ELLWANGER RUSSELL C , BRITCHER ERIC B , DONOSO BERNARDO , PANG LILY L , SHERMAN SVETLANA , HO HENRY , NGUYEN ANH N , LERNER ALEXANDER N , D AMBRA ALLEN L , SHANMUGASUNDRAM ARULKUMAR , ISHIKAWA TETSUYA , RABINOVICH YEVGENIY , LUBOMIRSKY DMITRY , MOK YEUK-FAI EDWIN , NGUYEN SON T
发明人： YANG MICHAEL X , XI MING , ELLWANGER RUSSELL C , BRITCHER ERIC B , DONOSO BERNARDO , PANG LILY L , SHERMAN SVETLANA , HO HENRY , NGUYEN ANH N , LERNER ALEXANDER N , D AMBRA ALLEN L , SHANMUGASUNDRAM ARULKUMAR , ISHIKAWA TETSUYA , RABINOVICH YEVGENIY , LUBOMIRSKY DMITRY , MOK YEUK-FAI EDWIN , NGUYEN SON T
IPC分类号： C25D7/12 , B08B3/02 , C25D5/00 , C25D17/00 , C25D17/02 , C25D19/00 , C25D21/00 , C25D21/08 , H01L21/00 , H01L21/68 , H01L21/683 , H01L21/687
CPC分类号： H01L21/67167 , B08B3/02 , C25D5/003 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6719 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.
摘要翻译：本发明的实施方案通常提供电化学电镀系统。电镀系统包括位于与主机处理平台连通的基板装载站，位于主框架上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

7. 发明申请

WO2008028082A3 PRECURSORS AND HARDWARE FOR CVD AND ALD 审中-公开
标题翻译： CVD和ALD的前体和硬件
公开(公告)号：WO2008028082A3
公开(公告)日：2008-04-24
申请号：PCT/US2007077301
申请日：2007-08-30
申请人： APPLIED MATERIALS INC , KHER SHREYAS S , NGUYEN SON T , NARWANKAR PRAVIN K , TANDON SANJEEV , JUMPER STEVE , SERMONA VINCENT
发明人： KHER SHREYAS S , NGUYEN SON T , NARWANKAR PRAVIN K , TANDON SANJEEV , JUMPER STEVE , SERMONA VINCENT
IPC分类号： C23C16/40 , C23C16/44
CPC分类号： C23C16/4404 , C23C16/34 , C23C16/405 , C23C16/45544 , C23C16/45553 , C23C16/45561 , C23C16/45582
摘要： The present invention generally comprises an apparatus for depositing high k dielectric or metal gate materials in which toxic, flammable, or pyrophoric precursors may be used. Exhaust conduits may be placed on the liquid precursor or solid precursor delivery cabinet, the gas panel, and the water vapor generator area. The exhaust conduits permit a technician to access the apparatus without undue exposure to toxic, pyrophoric, or flammable gases that may collect within the liquid deliver cabinet, gas panel, and water vapor generator area.
摘要翻译：本发明一般包括用于沉积高k电介质或金属栅极材料的装置，其中可使用有毒，易燃或发火前体。排气管道可以放置在液体前驱体或固体前驱体输送柜，气体面板和水蒸气发生器区域。排气管允许技术人员进入设备，而不会过度暴露于可能收集在液体输送柜，气体板和水蒸气发生器区域内的有毒，易燃或易燃气体。

8. 发明申请

WO2005036615A2 APPARATUS TO IMPROVE WAFER TEMPERATURE UNIFORMITY FOR FACE-UP WET PROCESSING 审中-公开
标题翻译：用于改进成型湿处理的晶片温度均匀性的装置
公开(公告)号：WO2005036615A2
公开(公告)日：2005-04-21
申请号：PCT/US2004032879
申请日：2004-10-05
申请人： APPLIED MATERIALS INC , PANCHAM IAN A , NGUYEN SON T , ROSEN GARY J
发明人： PANCHAM IAN A , NGUYEN SON T , ROSEN GARY J
IPC分类号： C23C18/16 , H01L21/00 , H01L21/288 , C23C16/458
CPC分类号： H01L21/67167 , C23C18/1628 , C23C18/163 , C23C18/1678 , C23C18/168 , H01L21/288 , H01L21/67109 , H01L21/6723
摘要： A method and apparatus for controlling a substrate temperature during an electroless deposition process. The apparatus includes a deposition cell configured to support a substrate at a position above a fluid distribution member. A heated fluid is dispensed from the fluid diffusion member and contacts the backside of the substrate, thus heating the substrate. The heated fluid is dispensed from apertures configured to maintain a constant temperature across the substrate surface. The method includes flowing a heated fluid through a diffusion member against a backside of the substrate in a configuration that is configured to generate a constant processing temperature across the front side of the substrate.
摘要翻译：一种用于在无电沉积工艺期间控制衬底温度的方法和设备。该设备包括沉积单元，该沉积单元构造成在流体分配构件上方的位置处支撑基板。加热的流体从流体扩散构件分配并接触基底的背面，从而加热基底。加热的流体从配置为在衬底表面上保持恒定温度的孔分配。该方法包括使经加热的流体流过扩散构件，使其被配置为在衬底的正面上产生恒定的处理温度的构造中抵靠衬底的背面。

9. 发明申请

WO2010036999A3 SUBSTRATE PROCESSING CHAMBER WITH OFF-CENTER GAS DELIVERY FUNNEL 审中-公开
标题翻译：带中心气体输送机的基板加工室
公开(公告)号：WO2010036999A3
公开(公告)日：2010-08-12
申请号：PCT/US2009058557
申请日：2009-09-28
申请人： APPLIED MATERIALS INC , MERRY NIR , NGUYEN SON T
发明人： MERRY NIR , NGUYEN SON T
IPC分类号： H01L21/205 , H01L21/00
CPC分类号： C23C16/45544 , C23C16/45502 , C23C16/45563
摘要： Methods and apparatus for processing substrates are disclosed herein. The process chamber includes a chamber body, a substrate support pedestal, a pump port and a gas injection funnel. The chamber body has an inner volume and the substrate support pedestal is disposed in the inner volume of the chamber body. The pump port is coupled to the inner volume and is disposed off-center from a central axis of the substrate support pedestal. The pump port provides azimuthally non-uniform pumping proximate to a surface of the substrate support pedestal and creates localized regions of high pressure and low pressure within the inner volume during use. The gas injection funnel is disposed in a ceiling of the chamber body and opposite the substrate support pedestal. The gas injection funnel is offset from the central axis of the substrate support pedestal and is disposed in a region of low pressure.
摘要翻译：本文公开了处理衬底的方法和设备。处理室包括室主体，基板支撑基座，泵口和气体注入漏斗。腔体具有内部体积，并且衬底支撑基座设置在腔体的内部体积中。泵口连接到内部体积并且设置在离基板支撑基座的中心轴线偏心的位置。泵端口提供靠近基板支撑基座的表面的方位不均匀的泵送，并且在使用期间在内部体积内产生高压和低压的局部区域。气体注入漏斗设置在室主体的顶部并与衬底支撑基座相对。气体注入漏斗偏离衬底支撑基座的中心轴线并且设置在低压区域中。

10. 发明申请

WO2010123877A3 CVD APPARATUS FOR IMPROVED FILM THICKNESS NON-UNIFORMITY AND PARTICLE PERFORMANCE 审中-公开
标题翻译：改善薄膜厚度的CVD装置非均匀性和颗粒性能
公开(公告)号：WO2010123877A3
公开(公告)日：2011-01-20
申请号：PCT/US2010031723
申请日：2010-04-20
申请人： APPLIED MATERIALS INC , TRAN BINH , CUI ANQING , HWANG BERNARD L , NGUYEN SON T , NGUYEN ANH N , SEUTTER SEAN M , TAO XIANZHI
发明人： TRAN BINH , CUI ANQING , HWANG BERNARD L , NGUYEN SON T , NGUYEN ANH N , SEUTTER SEAN M , TAO XIANZHI
IPC分类号： H01L21/205
CPC分类号： H01L21/6719 , C23C16/4401 , C23C16/4409 , C23C16/45512 , C23C16/45561 , H01L21/68742 , H01L21/68785
摘要： Embodiments of the invention provide improved apparatus for depositing layers on substrates, such as by chemical vapor deposition (CVD). The inventive apparatus disclosed herein may advantageously facilitate one or more of depositing films having reduced film thickness non-uniformity within a given process chamber, improved particle performance (e.g., reduced particles on films formed in the process chamber), chamber-to-chamber performance matching amongst a plurality of process chambers, and improved process chamber serviceability.
摘要翻译：本发明的实施例提供了用于在衬底上沉积层（例如通过化学气相沉积（CVD））的改进的装置。本文公开的本发明的装置可以有利地促进一种或多种在给定的处理室内具有减小的膜厚度不均匀的沉积膜，改善的颗粒性能（例如，在处理室中形成的膜上的还原颗粒），室到室的性能在多个处理室之间进行匹配，以及改进的处理室可维护性。

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