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1. 发明申请

WO2011133304A2 GROUP III-NITRIDE N-TYPE DOPING 审中-公开
标题翻译： III类氮化物N型掺杂
公开(公告)号：WO2011133304A2
公开(公告)日：2011-10-27
申请号：PCT/US2011/030603
申请日：2011-03-30
申请人： APPLIED MATERIALS, INC. , MELNIK, Yuriy , KRYLIOUK, Olga , CHEN, Lu , KOJIRI, Hidehiro , TETSUYA, Ishikawa
发明人： MELNIK, Yuriy , KRYLIOUK, Olga , CHEN, Lu , KOJIRI, Hidehiro , TETSUYA, Ishikawa
IPC分类号： H01L21/20 , H01L21/205 , H01L33/32 , H01L33/34
CPC分类号： H01L21/2233 , C23C16/30 , C23C16/303 , C30B25/02 , C30B29/403 , H01L21/67115 , H01L21/68764 , H01L21/68771 , H01L33/007 , H01L33/325
摘要： Group III-nitride N-type doping techniques are described.
摘要翻译：描述了III族氮化物N型掺杂技术。

2. 发明申请

WO2011014822A3 LIGHT EMITTING DIODE WITH ENHANCED QUANTUM EFFICIENCY AND METHOD OF FABRICATION 审中-公开
公开(公告)号：WO2011014822A3
公开(公告)日：2011-02-03
申请号：PCT/US2010/043993
申请日：2010-07-30
申请人： APPLIED MATERIALS, INC. , SU, Jie , KRYLIOUK, Olga , MELNIK, Yuriy , KOJIRI, Hidehiro , CHEN, Lu , ISHIKAWA, Tetsuya
发明人： SU, Jie , KRYLIOUK, Olga , MELNIK, Yuriy , KOJIRI, Hidehiro , CHEN, Lu , ISHIKAWA, Tetsuya
IPC分类号： H01L33/08 , H01L33/04 , H01L33/06
摘要： One embodiment of a quantum well structure comprises an active region including active layers that comprise quantum wells and barrier layers wherein some or all of the active layers are p type doped. P type doping some or all of the active layers improves the quantum efficiency of III-V compound semiconductor light emitting diodes by locating the position of the P-N junction in the active region of the device thereby enabling the dominant radiative recombination to occur within the active region. In one embodiment, the quantum well structure is fabricated in a cluster tool having a hydride vapor phase epitaxial (HVPE) deposition chamber with a eutectic source alloy. In one embodiment, the indium gallium nitride (InGaN) layer and the magnesium doped gallium nitride (Mg-GaN) or magnesium doped aluminum gallium nitride (Mg-AlGaN) layer are grown in separate chambers by a cluster tool to avoid indium and magnesium cross contamination. Doping of group III-nitrides by hydride vapor phase epitaxy using group III-metal eutectics is also described. In one embodiment, a source is provided for HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the source including a liquid phase mechanical (eutectic) mixture with a group III species. In one embodiment, a method is provided for performing HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the method including using a liquid phase mechanical (eutectic) mixture with a group III species.

3. 发明申请

WO2011009093A2 A METHOD OF FORMING A GROUP III-NITRIDE CRYSTALLINE FILM ON A PATTERNED SUBSTRATE BY HYDRIDE VAPOR PHASE EPITAXY (HVPE) 审中-公开
标题翻译：通过氢化物气相外延（HVPE）在图案化基板上形成III族氮化物结晶膜的方法
公开(公告)号：WO2011009093A2
公开(公告)日：2011-01-20
申请号：PCT/US2010/042351
申请日：2010-07-16
申请人： APPLIED MATERIALS, INC. , KRYLIOUK, Olga , MELNIK, Yuriy , KOJIRI, Hidehiro , ISHIKAWA, Tetsuya
发明人： KRYLIOUK, Olga , MELNIK, Yuriy , KOJIRI, Hidehiro , ISHIKAWA, Tetsuya
IPC分类号： H01L21/20 , H01L33/02
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/04 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/22
摘要： A method of depositing a high quality low defect single crystalline Group Ill-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group Ill-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group Ill-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.
摘要翻译：一种沉积高质量低缺陷单晶III族氮化物膜的方法。提供具有多个特征的图案化衬底，其中倾斜侧壁被空间隔开。通过氢化物气相外延（HVPE）工艺在图案化衬底上沉积III族氮化物膜。 HVPE沉积工艺形成在特征之间的空间中具有第一晶体取向并且在倾斜侧壁上具有第二不同晶体取向的III族氮化物膜。空间中的第一个晶体取向随后在侧壁上过度扩大第二晶体取向，并且在该过程中翻转并终止在第一晶体取向中形成的踩踏位错。

4. 发明申请

WO2010127156A2 METHOD OF FORMING IN-SITU PRE-GAN DEPOSITION LAYER IN HVPE 审中-公开
标题翻译：在HVPE中形成原位预沉积层的方法
公开(公告)号：WO2010127156A2
公开(公告)日：2010-11-04
申请号：PCT/US2010/033030
申请日：2010-04-29
申请人： APPLIED MATERIALS, INC. , MELNIK, Yuriy , KOJIRI, Hidehiro , KRYLIOUK, Olga , ISHIKAWA, Tetsuya
发明人： MELNIK, Yuriy , KOJIRI, Hidehiro , KRYLIOUK, Olga , ISHIKAWA, Tetsuya
IPC分类号： H01L21/205 , H01L33/02
CPC分类号： C23C16/4488 , C23C16/303 , C23C16/45523 , C30B25/02 , C30B29/403
摘要： A method and apparatus is provided for preparing a substrate for forming electronic devices incorporating III/V compound semiconductors. Elemental halogen gases, hydrogen halide gases, or other halogen or halide gases, are contacted with liquid or solid group III metals to form precursors which are reacted with nitrogen sources to deposit a nitride buffer layer on the substrate. The buffer layer, which may be a transition layer, may incorporate more than one group III metal, and may be deposited with amorphous or crystalline morphology. An amorphous layer may be partially or fully recrystallized by thermal treatment. Instead of a layer, a plurality of discrete nucleation sites may be formed, whose size, density, and distribution may be controlled. The nitrogen source may include reactive nitrogen compounds as well as active nitrogen from a remote plasma source. The composition of the buffer or transition layer may also vary with depth according to a desired profile.
摘要翻译：提供了一种用于制备用于形成结合III / V化合物半导体的电子器件的衬底的方法和装置。元素卤素气体，卤化氢气体或其它卤素或卤化物气体与液体或固体III族金属接触以形成与氮源反应以在衬底上沉积氮化物缓冲层的前体。可以是过渡层的缓冲层可以结合多于一个III族金属，并且可以以无定形或结晶形态沉积。非晶层可以通过热处理部分或完全重结晶。代替层，可以形成多个离散的成核位点，其尺寸，密度和分布可以被控制。氮源可以包括反应性氮化合物以及来自远程等离子体源的活性氮。缓冲层或过渡层的组成也可根据所需的轮廓随深度而变化。

5. 发明申请

WO2010124261A4 SUBSTRATE PRETREATMENT FOR SUBSEQUENT HIGH TEMPERATURE GROUP III DEPOSITIONS 审中-公开
公开(公告)号：WO2010124261A4
公开(公告)日：2010-10-28
申请号：PCT/US2010/032313
申请日：2010-04-23
申请人： APPLIED MATERIALS, INC. , MELNIK, Yuriy , KRYLIOUK, Olga , KOJIRI, Hidehiro , ISHIKAWA, Tetsuya
发明人： MELNIK, Yuriy , KRYLIOUK, Olga , KOJIRI, Hidehiro , ISHIKAWA, Tetsuya
IPC分类号： H01L21/302 , H01L21/20 , H01L33/02 , H01S5/30
摘要： Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One embodiment of the present invention comprises pre-treating the aluminum oxide containing substrate by exposing a surface of the aluminum oxide containing substrate to a pretreatment gas mixture, wherein the pretreatment gas mixture comprises ammonia (NH 3 ) and a halogen gas.

6. 发明申请

WO2010118293A3 HVPE CHAMBER HARDWARE 审中-公开
公开(公告)号：WO2010118293A3
公开(公告)日：2010-10-14
申请号：PCT/US2010/030492
申请日：2010-04-09
申请人： APPLIED MATERIALS, INC. , ISHIKAWA, Tetsuya , QUACH, David, H. , CHANG, Anzhong , KRYLIOUK, Olga , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
发明人： ISHIKAWA, Tetsuya , QUACH, David, H. , CHANG, Anzhong , KRYLIOUK, Olga , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
IPC分类号： H01L21/20 , H01L33/02
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

7. 发明申请

WO2009055245A1 SHOWERHEAD DESIGN WITH PRECURSOR PRE-MIXING 审中-公开
标题翻译：具有前置预混装置的淋浴设计
公开(公告)号：WO2009055245A1
公开(公告)日：2009-04-30
申请号：PCT/US2008/079168
申请日：2008-10-08
申请人： APPLIED MATERIALS, INC. , BURROWS, Brian H. , KRYLIOUK, Olga , MELNIK, Yuriy , GRAYSON, Jacob , NIJHAWAN, Sandeep , STEVENS, Ronald , ACHARYA, Sumedh
发明人： BURROWS, Brian H. , KRYLIOUK, Olga , MELNIK, Yuriy , GRAYSON, Jacob , NIJHAWAN, Sandeep , STEVENS, Ronald , ACHARYA, Sumedh
IPC分类号： H01L21/36
CPC分类号： C23C16/4488 , C23C16/45502 , C23C16/45512 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/45578 , C30B25/02 , C30B25/14 , C30B29/403 , G05D23/22 , G05D23/27
摘要： A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.
摘要翻译：提供了可用于沉积工艺的方法和装置，例如金属氮化物膜的氢化物气相外延（HVPE）沉积。第一组通道可以引入含金属的前体气体。第二组通道可以提供含氮前体气体。第一组和第二组通道可以散布，以分离含金属的前体气体和含氮前体气体，直到它们到达基底。惰性气体也可以通过通道向下流动，以帮助保持分离并限制通道处或附近的反应，从而防止通道上的不希望的沉积。

8. 发明申请

WO2009055244A1 SHOWERHEAD DESIGN WITH PRECURSOR SOURCE 审中-公开
标题翻译： SHOWERHEAD设计与前提源
公开(公告)号：WO2009055244A1
公开(公告)日：2009-04-30
申请号：PCT/US2008/079164
申请日：2008-10-08
申请人： APPLIED MATERIALS, INC. , WASHINGTON, Lori D. , KRYLIOUK, Olga , MELNIK, Yuriy , GRAYSON, Jacob , NIJHAWAN, Sandeep
发明人： WASHINGTON, Lori D. , KRYLIOUK, Olga , MELNIK, Yuriy , GRAYSON, Jacob , NIJHAWAN, Sandeep
IPC分类号： H01L21/36
CPC分类号： C23C16/45565 , C23C16/4488 , C23C16/45502 , C23C16/45512 , C23C16/4557 , C23C16/45574 , C23C16/45578 , C23C16/481 , C30B25/02 , C30B29/403 , H01L21/0254 , H01L21/0262
摘要： A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.
摘要翻译：提供了可用于沉积工艺的方法和装置，例如金属氮化物膜的氢化物气相外延（HVPE）沉积。第一组通道可以引入含金属的前体气体。第二组通道可以提供含氮前体气体。第一组和第二组通道可以散布，以分离含金属的前体气体和含氮前体气体，直到它们到达基底。惰性气体也可以通过通道向下流动，以帮助保持分离并限制通道处或附近的反应，从而防止通道上的不希望的沉积。

9. 发明申请

WO2009046261A1 METHOD FOR DEPOSITING GROUP III/V COMPOUNDS 审中-公开
标题翻译：沉积III / V族化合物的方法
公开(公告)号：WO2009046261A1
公开(公告)日：2009-04-09
申请号：PCT/US2008/078687
申请日：2008-10-03
申请人： APPLIED MATERIALS, INC. , KRYLIOUK, Olga , NIJHAWAN, Sandeep , MELNIK, Yuriy , WASHINGTON, Lori D. , GRAYSON, Jacob W. , JUN, Sung W. , SU, Jie
发明人： KRYLIOUK, Olga , NIJHAWAN, Sandeep , MELNIK, Yuriy , WASHINGTON, Lori D. , GRAYSON, Jacob W. , JUN, Sung W. , SU, Jie
IPC分类号： C30B23/00 , C30B25/00
CPC分类号： C30B25/02 , C23C16/303 , C23C16/4488 , C23C16/45578 , C30B29/403
摘要： Embodiments of the invention generally relate to methods for forming Group III-V materials by a hydride vapor phase epitaxy (HVPE) process. In one embodiment, a method for forming a gallium nitride material on a substrate within a processing chamber is provided which includes heating a metallic source to form a heated metallic source, wherein the heated metallic source contains gallium, aluminum, indium, alloys thereof, or combinations thereof, exposing the heated metallic source to chlorine gas while forming a metallic chloride gas, exposing the substrate to the metallic chloride gas and a nitrogen precursor gas while forming a metal nitride layer on the substrate during the HVPE process. The method further provides exposing the substrate to chlorine gas during a pretreatment process prior to forming the metal nitride layer. In one example, the exhaust conduit of the processing chamber is heated to about 200°C or less during the pretreatment process.
摘要翻译：本发明的实施方案一般涉及通过氢化物气相外延（HVPE）方法形成III-V族材料的方法。在一个实施例中，提供了一种用于在处理室内的衬底上形成氮化镓材料的方法，其包括加热金属源以形成加热的金属源，其中加热的金属源包含镓，铝，铟，其合金或其组合，同时形成金属氯化物气体，将加热的金属源暴露于氯气中，在HVPE工艺期间在衬底上形成金属氮化物层，同时将衬底暴露于金属氯化物气体和氮气前体气体。该方法还在形成金属氮化物层之前在预处理工艺期间将衬底暴露于氯气。在一个实例中，处理室的排气管道在预处理过程中被加热到约200℃或更低。

10. 发明申请

WO2009002356A1 HVPE SHOWERHEAD DESIGN 审中-公开
标题翻译： HVPE淋浴设计
公开(公告)号：WO2009002356A1
公开(公告)日：2008-12-31
申请号：PCT/US2007/082147
申请日：2007-10-22
申请人： APPLIED MATERIALS, INC. , MELNIK, Yuriy , BURROWS, Brian H. , TAM, Alexander , STEVENS, Ronald , GRAYSON, Jacob , CHOI, Kenric T. , ACHARYA, Sumedh , NIJHAWAN, Sandeep , KRYLIOUK, Olga
发明人： BURROWS, Brian H. , TAM, Alexander , STEVENS, Ronald , GRAYSON, Jacob , CHOI, Kenric T. , ACHARYA, Sumedh , NIJHAWAN, Sandeep , KRYLIOUK, Olga
IPC分类号： H01L21/336
CPC分类号： C23C16/4488 , C23C16/45502 , C23C16/45512 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/45578 , C30B25/14 , C30B29/403 , Y10T117/10
摘要： A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.
摘要翻译：提供了可用于沉积工艺的方法和装置，例如金属氮化物膜的氢化物气相外延（HVPE）沉积。第一组通道可以引入含金属的前体气体。第二组通道可以提供含氮前体气体。第一组和第二组通道可以散布在努力分离含金属的前体气体和含氮前体气体直到它们到达基底。惰性气体也可以通过通道向下流动，以帮助保持分离并限制通道处或附近的反应，从而防止通道上的不希望的沉积。

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