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    • 1. 发明授权
    • Method of manufacturing a semiconductor device
    • 制造半导体器件的方法
    • US5106782A
    • 1992-04-21
    • US378627
    • 1989-07-12
    • Tadashi MatsunoHideki ShibataKazuhiko HashimotoHisayo Momose
    • Tadashi MatsunoHideki ShibataKazuhiko HashimotoHisayo Momose
    • H01L21/8238H01L21/225H01L21/28H01L21/768H01L27/092
    • H01L21/2257H01L21/76801Y10S148/02Y10S148/026Y10S148/102
    • A method of manufacturing a semiconductor device having a semiconductor substrate of a first conductivity type, an N-type diffusion layer formed in the substrate, and a P-type diffusion layer formed in the substrate. Two contact holes are formed in separate steps, thus exposing the N-type diffusion layer and the P-type diffusion layer, respectively. Hence, when one of the diffusion layers is again doped with an impurity, or again heat-treated, the other diffusion layer is already protected by inter-layer insulation film. Therefore, the impurity cannot diffuse into the contact formed in the contact hole made in the other diffusion layer. As a result of this, SAC technique can be successfully achieved, without deteriorating the characteristic of the contact. In addition, since two contact holes are made in a polysilicon wiring strip and the diffusion layer to which the SAC technique is applied, in separate steps, the SAC technique can be successfully accomplished, without deteriorating the characteristic of the MOSFET formed in the semiconductor device.
    • 一种制造半导体器件的方法,该半导体器件具有第一导电类型的半导体衬底,形成在衬底中的N型扩散层,以及形成在衬底中的P型扩散层。 在分开的步骤中形成两个接触孔,从而分别露出N型扩散层和P型扩散层。 因此,当扩散层中的一个再次掺杂杂质或再次热处理时,另一个扩散层已经被层间绝缘膜保护。 因此,杂质不能扩散到在另一扩散层中形成的接触孔中形成的接触中。 作为其结果,可以成功地实现SAC技术,而不会使接触的特性恶化。 此外,由于在多晶硅布线条中形成两个接触孔,并且在单独的步骤中制成SAC技术所用的扩散层,所以可以成功地实现SAC技术,而不会降低在半导体器件中形成的MOSFET的特性 。