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    • 2. 发明授权
    • Piezoelectric thin-film resonator and method for producing the same
    • 压电薄膜谐振器及其制造方法
    • US07436102B2
    • 2008-10-14
    • US11270259
    • 2005-11-10
    • Hidetoshi FujiiRyuichi Kubo
    • Hidetoshi FujiiRyuichi Kubo
    • H01L41/08
    • H03H3/02H03H9/173Y10T29/42Y10T29/435Y10T29/49155
    • A method for producing a piezoelectric thin-film resonator includes forming a sacrificial layer on a substrate, performing a plasma treatment on the sacrificial layer so that the surface roughness (Ra) of end surface portions of the sacrificial layer is about 5 nm or less, forming a strip-shaped dielectric film so as to be continuously disposed on the surface of the substrate and the end surface portions and the principal surface of the sacrificial layer, forming a piezoelectric thin-film area including a lower electrode, an upper electrode, and a piezoelectric thin-film disposed therebetween so that a portion of the lower electrode and a portion of the upper electrode surface each other at an area on the dielectric film, the area being disposed on the upper portion of the sacrificial layer, and removing the sacrificial layer to form an air-gap between the substrate and the dielectric film.
    • 一种压电薄膜谐振器的制造方法,其特征在于,在基板上形成牺牲层,对牺牲层进行等离子体处理,使牺牲层的端面部的表面粗糙度(Ra)为5nm以下, 形成带状电介质膜,以连续地设置在基板的表面和牺牲层的端面部分和主表面上,形成包括下电极,上电极和 设置在其间的压电薄膜,使得下电极的一部分和上电极的一部分在电介质膜上的区域彼此面对,该区域设置在牺牲层的上部,并且去除牺牲层 以在衬底和电介质膜之间形成气隙。
    • 9. 发明申请
    • Piezoelectric thin-film resonator and method for producing the same
    • 压电薄膜谐振器及其制造方法
    • US20060097823A1
    • 2006-05-11
    • US11270259
    • 2005-11-10
    • Hidetoshi FujiiRyuichi Kubo
    • Hidetoshi FujiiRyuichi Kubo
    • H03H9/00
    • H03H3/02H03H9/173Y10T29/42Y10T29/435Y10T29/49155
    • A method for producing a piezoelectric thin-film resonator includes forming a sacrificial layer on a substrate, performing a plasma treatment on the sacrificial layer so that the surface roughness (Ra) of end surface portions of the sacrificial layer is about 5 nm or less, forming a strip-shaped dielectric film so as to be continuously disposed on the surface of the substrate and the end surface portions and the principal surface of the sacrificial layer, forming a piezoelectric thin-film area including a lower electrode, an upper electrode, and a piezoelectric thin-film disposed therebetween so that a portion of the lower electrode and a portion of the upper electrode surface each other at an area on the dielectric film, the area being disposed on the upper portion of the sacrificial layer, and removing the sacrificial layer to form an air-gap between the substrate and the dielectric film.
    • 一种压电薄膜谐振器的制造方法,其特征在于,在基板上形成牺牲层,对牺牲层进行等离子体处理,使牺牲层的端面部的表面粗糙度(Ra)为5nm以下, 形成带状电介质膜,以连续地设置在基板的表面和牺牲层的端面部分和主表面上,形成包括下电极,上电极和 设置在其间的压电薄膜,使得下电极的一部分和上电极的一部分在电介质膜上的区域彼此面对,该区域设置在牺牲层的上部,并且去除牺牲层 以在衬底和电介质膜之间形成气隙。
    • 10. 发明授权
    • Infrared sensor
    • 红外传感器
    • US06720559B2
    • 2004-04-13
    • US09858766
    • 2001-05-16
    • Ryuichi Kubo
    • Ryuichi Kubo
    • G01J512
    • G01J5/12
    • An infrared sensor is provided, which includes a substrate 12, a diaphragm 14 supported by the substrate, at least one thermocouple 17 provided with a cold junction 20 formed on the substrate and a hot junction 18 formed on the diaphragm, and an infrared-absorptive film 24 formed on the diaphragm so as to cover the hot junction of the thermocouple. The area of the infrared-absorptive film is 64% to 100% of the area of the diaphragm.
    • 提供了一种红外传感器,其包括基板12,由基板支撑的隔膜14,至少一个热电偶17,其设置有形成在基板上的冷结20和形成在隔膜上的热接点18以及红外吸收 薄膜24形成在隔膜上,以覆盖热电偶的热接头。 红外线吸收膜的面积为隔膜面积的64%〜100%。