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1. 发明授权

US09184357B2 Light emitting device and method for manufacturing same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US09184357B2
公开(公告)日：2015-11-10
申请号：US13310384
申请日：2011-12-02
申请人： Yoshiaki Sugizaki , Hideki Shibata , Masayuki Ishikawa , Hideo Tamura , Tetsuro Komatsu , Akihiro Kojima
发明人： Yoshiaki Sugizaki , Hideki Shibata , Masayuki Ishikawa , Hideo Tamura , Tetsuro Komatsu , Akihiro Kojima
IPC分类号： H01L33/00 , H01L33/44 , H01L33/38 , H01L33/62 , H01L23/00 , H01L25/075 , H01L33/34 , H01L33/48 , H01L33/58
CPC分类号： H01L33/62 , H01L24/02 , H01L24/05 , H01L24/11 , H01L24/12 , H01L24/13 , H01L24/16 , H01L25/0753 , H01L33/0079 , H01L33/34 , H01L33/38 , H01L33/44 , H01L33/486 , H01L33/50 , H01L33/58 , H01L2224/02375 , H01L2224/0401 , H01L2224/05012 , H01L2224/05552 , H01L2224/05555 , H01L2224/05571 , H01L2224/06132 , H01L2224/06152 , H01L2224/13023 , H01L2224/13099 , H01L2224/131 , H01L2224/81801 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/12042 , H01L2933/0016 , H01L2933/0033 , H01L2933/0041 , H01L2933/0066 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2924/014 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A method for manufacturing a light emitting device includes forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate. A dielectric film on a second surface side opposite to the first surface of the multilayer body is formed having first and second openings on a p-side electrode and an n-side electrode. A seed metal on the dielectric film and an exposed surface of the first and second openings form a p-side metal interconnect layer and an n-side metal interconnect layer separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal. A resin is formed in a space from which the seed metal is removed.
摘要翻译：一种制造发光器件的方法包括：形成包括发光层的多层体，使得其第一表面与透光性基板的第一表面侧相邻。在与p层电极和n侧电极之间形成有第一和第二开口的与多层体的第一表面相对的第二表面侧上的电介质膜形成。电介质膜上的种子金属和第一和第二开口的暴露表面形成将种子金属分离成p侧金属和n侧籽晶的p侧金属互连层和n侧金属互连层金属，通过去除一部分种子金属。在除去种子金属的空间中形成树脂。

2. 发明申请

US20120097972A1 LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20120097972A1
公开(公告)日：2012-04-26
申请号：US13310384
申请日：2011-12-02
申请人： Yoshiaki SUGIZAKI , Hideki Shibata , Masayuki Ishikawa , Hideo Tamura , Tetsuro Komatsu , Akihiro Kojima
发明人： Yoshiaki SUGIZAKI , Hideki Shibata , Masayuki Ishikawa , Hideo Tamura , Tetsuro Komatsu , Akihiro Kojima
IPC分类号： H01L33/50 , H01L33/30
CPC分类号： H01L33/62 , H01L24/02 , H01L24/05 , H01L24/11 , H01L24/12 , H01L24/13 , H01L24/16 , H01L25/0753 , H01L33/0079 , H01L33/34 , H01L33/38 , H01L33/44 , H01L33/486 , H01L33/50 , H01L33/58 , H01L2224/02375 , H01L2224/0401 , H01L2224/05012 , H01L2224/05552 , H01L2224/05555 , H01L2224/05571 , H01L2224/06132 , H01L2224/06152 , H01L2224/13023 , H01L2224/13099 , H01L2224/131 , H01L2224/81801 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/12042 , H01L2933/0016 , H01L2933/0033 , H01L2933/0041 , H01L2933/0066 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2924/014 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A method for manufacturing a light emitting device includes forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate. A dielectric film on a second surface side opposite to the first surface of the multilayer body is formed having first and second openings on a p-side electrode and an n-side electrode. A seed metal on the dielectric film and an exposed surface of the first and second openings form a p-side metal interconnect layer and an n-side metal interconnect layer separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal. A resin is formed in a space from which the seed metal is removed.
摘要翻译：一种制造发光器件的方法包括：形成包括发光层的多层体，使得其第一表面与透光性基板的第一表面侧相邻。在与p层电极和n侧电极之间形成有第一和第二开口的与多层体的第一表面相对的第二表面侧上的电介质膜形成。电介质膜上的种子金属和第一和第二开口的暴露表面形成将种子金属分离成p侧金属和n侧籽晶的p侧金属互连层和n侧金属互连层金属，通过去除一部分种子金属。在除去种子金属的空间中形成树脂。

3. 再颁专利

USRE43320E1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：USRE43320E1
公开(公告)日：2012-04-24
申请号：US12202037
申请日：2008-08-29
申请人： Masaki Yamada , Hideki Shibata
发明人： Masaki Yamada , Hideki Shibata
IPC分类号： H01L29/40 , H01L23/48 , H01L23/52
CPC分类号： H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： There is disclosed a semiconductor device comprising a first metal wiring buried in a first wiring groove formed, via a first barrier metal, in a first insulating layer formed on a semiconductor substrate, a second insulating layer formed on the first metal wiring, a via plug formed of a metal buried, via a second barrier metal, in a via hole formed in the second insulating layer, a third insulating layer formed on the second insulating layer in which the via plug is buried, and a second metal wiring buried in a second wiring groove formed in the third insulating layer via a third barrier metal having a layer thickness of layer quality different from that of the second barrier metal.
摘要翻译：公开了一种半导体器件，其包括埋在第一布线槽中的第一金属布线，第一布线槽经由第一阻挡金属形成在形成于半导体基板上的第一绝缘层中，形成在第一金属布线上的第二绝缘层，由形成在所述第二绝缘层中的通孔中的通过第二阻挡金属掩埋的金属形成，形成在所述第二绝缘层上的第三绝缘层，所述第二绝缘层中埋设有所述通孔插塞，以及第二金属布线，通过具有不同于第二阻挡金属的层质量的层厚度的第三阻挡金属形成在第三绝缘层中的布线槽。

4. 发明授权

US08133813B2 Semiconductor device with a barrier film 有权
标题翻译：具有阻挡膜的半导体器件
公开(公告)号：US08133813B2
公开(公告)日：2012-03-13
申请号：US13087026
申请日：2011-04-14
申请人： Junichi Koike , Makoto Wada , Shingo Takahashi , Noriyoshi Shimizu , Hideki Shibata , Satoshi Nishikawa , Takamasa Usui , Hayato Nasu , Masaki Yoshimaru
发明人： Junichi Koike , Makoto Wada , Shingo Takahashi , Noriyoshi Shimizu , Hideki Shibata , Satoshi Nishikawa , Takamasa Usui , Hayato Nasu , Masaki Yoshimaru
IPC分类号： H01L21/4763
CPC分类号： H01L21/76844 , H01L21/76831 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76867 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film.
摘要翻译：一种制造半导体器件的方法，包括在设置在半导体衬底上的层间绝缘膜中形成开口，形成含有预定金属元素的辅助膜，以覆盖开口的内表面，形成主膜以填充开口在形成辅助膜之后，主膜含有用作互连主层的材料的Cu，并且在形成主膜之前或之后进行热处理，从而扩散辅助膜的预定金属元素在面向辅助膜的层间绝缘膜的表面上，以在开口内的层间绝缘膜上形成阻挡膜，所述阻挡膜以预定的金属元素与成分元素为主要成分，的层间绝缘膜。

5. 发明申请

US20110291149A1 LIGHT EMITTING DEVICE 失效
标题翻译：发光装置
公开(公告)号：US20110291149A1
公开(公告)日：2011-12-01
申请号：US12885721
申请日：2010-09-20
申请人： Yoshiaki Sugizaki , Hideki Shibata , Akihiro Kojima , Masayuki Ishikawa , Hideo Tamura , Tetsuro Komatsu
发明人： Yoshiaki Sugizaki , Hideki Shibata , Akihiro Kojima , Masayuki Ishikawa , Hideo Tamura , Tetsuro Komatsu
IPC分类号： H01L33/48
CPC分类号： H01L33/647 , H01L27/153 , H01L33/62 , H01L2224/16 , H01L2933/0066
摘要： According to one embodiment, a light emitting device includes a light emitting chip, an external terminal made of a metal material, and a circuit board. The light emitting chip is mounted on the circuit board via the external terminal. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar and a resin layer. The circuit board includes an interconnection bonded to the first metal pillar and the second metal pillar via the external terminal, and a heat radiation material provided on an opposite side of the interconnection and connected to the interconnection.
摘要翻译：根据一个实施例，发光器件包括发光芯片，由金属材料制成的外部端子和电路板。发光芯片通过外部端子安装在电路板上。发光芯片包括半导体层，第一电极，第二电极，绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和树脂层。电路板包括经由外部端子与第一金属柱和第二金属柱接合的互连以及设置在互连的相对侧并连接到互连的散热材料。

6. 发明授权

US07855141B2 Semiconductor device having multiple wiring layers and method of producing the same 有权
公开(公告)号：US07855141B2
公开(公告)日：2010-12-21
申请号：US12501839
申请日：2009-07-13
申请人： Yoshiaki Shimooka , Hideki Shibata , Hideshi Miyajima , Kazuhiro Tomioka
发明人： Yoshiaki Shimooka , Hideki Shibata , Hideshi Miyajima , Kazuhiro Tomioka
IPC分类号： H01L21/4763
CPC分类号： H01L21/76885 , H01L21/76807 , H01L21/7682 , H01L21/76829 , H01L21/76834 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： A method of producing a semiconductor device having a plurality of wiring layers forms a first interlayer-insulating film, forms a plurality of grooves for wiring in the first interlayer-insulating film, fills metallic films in the grooves to form wirings, etches the first interlayer-insulating film with the wirings as a mask and removes the interlayer-insulating film between the wirings to provide grooves to be filled, and fills a second interlayer-insulating film made of a material of low dielectric constant in the grooves to be filled.

7. 发明授权

US07795733B2 Semiconductor device having aerial wiring and manufacturing method thereof 失效
标题翻译：具有空中配线的半导体装置及其制造方法
公开(公告)号：US07795733B2
公开(公告)日：2010-09-14
申请号：US11399653
申请日：2006-04-07
申请人： Kazumichi Tsumura , Hideki Shibata , Masaki Yamada
发明人： Kazumichi Tsumura , Hideki Shibata , Masaki Yamada
IPC分类号： H01L29/40
CPC分类号： H01L21/76831 , H01L21/7682 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L21/76843 , H01L21/76856 , H01L21/76858 , H01L23/5222 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first aerial wiring including a first wiring layer which is formed in an air gap and contains Cu as a main component and a via layer which is electrically connected to the first wiring layer, is formed in an inter-level insulating film containing a preset constituent element and contains Cu as a main component, and a first porous film formed on the first aerial wiring. The semiconductor device further includes a first barrier film which is formed to cover the surface of the first aerial wiring and contains a compound of the preset constituent element and a preset metal element as a main component.
摘要翻译：半导体器件包括：第一天线布线，其包括形成在气隙中并且包含Cu作为主要成分的第一布线层和与第一布线层电连接的通孔层，形成在层间绝缘膜中含有预设的构成元素并含有Cu作为主要成分，以及形成在第一空间布线上的第一多孔膜。半导体装置还包括第一阻挡膜，其形成为覆盖第一空中布线的表面并且包含预设构成元件的化合物和预设的金属元素作为主要成分。

8. 发明授权

US07750473B2 LSI wiring pattern for reduced deformation and cracking 失效
标题翻译： LSI布线图案，减少变形和开裂
公开(公告)号：US07750473B2
公开(公告)日：2010-07-06
申请号：US11960209
申请日：2007-12-19
申请人： Takamasa Usui , Hideki Shibata , Tadashi Murofushi , Masakazu Jimbo , Hiroshi Hirayama
发明人： Takamasa Usui , Hideki Shibata , Tadashi Murofushi , Masakazu Jimbo , Hiroshi Hirayama
IPC分类号： H01L23/48
CPC分类号： H01L23/5222 , H01L23/522 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor device including first and second wiring layers, and dummy and conductive patterns. The first and second wiring layers each have a hollow structure, and are stacked vertically adjacent to each other on a semiconductor substrate. The dummy pattern is formed in the first wiring layer, and does not function as a signal line. The conductive pattern is formed in the second wiring layer. The dummy and conductive patterns have an overlapping portion where these patterns overlap each other, and a non-overlapping portion where these patterns overlap each other, as viewed from above the semiconductor substrate.
摘要翻译：提供了包括第一和第二布线层以及虚拟和导电图案的半导体器件。第一和第二布线层各自具有中空结构，并且在半导体衬底上彼此垂直地堆叠。虚设图案形成在第一布线层中，不用作信号线。导电图案形成在第二布线层中。伪距和导电图案具有这些图案彼此重叠的重叠部分，以及从半导体基板的上方观察这些图案彼此重叠的非重叠部分。

9. 发明授权

US07485915B2 Semiconductor device and method having capacitor and capacitor insulating film that includes preset metal element 失效
标题翻译：具有电容器和电容器绝缘膜的半导体器件和方法，包括预设的金属元件
公开(公告)号：US07485915B2
公开(公告)日：2009-02-03
申请号：US11418467
申请日：2006-05-05
申请人： Hayato Nasu , Takamasa Usui , Hideki Shibata
发明人： Hayato Nasu , Takamasa Usui , Hideki Shibata
IPC分类号： H01L27/108 , H01L29/04 , H01L29/12 , H01L29/76 , H01L31/036 , H01L31/112 , H01L29/786 , H01L29/94 , H01L31/908 , H01L29/00 , H01L23/48 , H01L23/52
CPC分类号： H01L23/5223 , H01L21/76831 , H01L21/7687 , H01L23/53233 , H01L23/53238 , H01L28/75 , H01L28/91 , H01L2924/0002 , Y10S257/906 , Y10S257/908 , Y10S257/924 , H01L2924/00
摘要： A semiconductor device includes a capacitor which includes a capacitor insulating film at least including a first insulating film and a ferroelectric film formed in contact with the first insulating film, containing a compound of a preset metal element and a constituent element of the first insulating film as a main component and having a dielectric constant larger than that of the first insulating film, a first capacitor electrode formed of one of Cu and a material containing Cu as a main component, and a second capacitor electrode formed to sandwich the capacitor insulating film in cooperation with the first capacitor electrode.
摘要翻译：一种半导体器件包括电容器，该电容器包括至少包括第一绝缘膜的电容器绝缘膜和与第一绝缘膜接触形成的铁电膜，其包含预置金属元素的化合物和第一绝缘膜的构成元素，主要成分，其介电常数大于第一绝缘膜的介电常数，由Cu中的一种和含有Cu作为主要成分的材料形成的第一电容器电极和形成为在电容器绝缘膜中配合的第二电容器电极与第一电容器电极。

10. 外观设计

USD551174S1 Fuse 有权
公开(公告)号：USD551174S1
公开(公告)日：2007-09-18
申请号：US29256477
申请日：2006-03-21
申请人： Manabu Ohta , Hideki Shibata , Katsuya Ito
设计人： Manabu Ohta , Hideki Shibata , Katsuya Ito

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