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1. 发明授权

US5444244A Piezoresistive cantilever with integral tip for scanning probe microscope 失效
标题翻译：用于扫描探针显微镜的压阻悬臂
公开(公告)号：US5444244A
公开(公告)日：1995-08-22
申请号：US073201
申请日：1993-06-03
申请人： Michael D. Kirk , Ian R. Smith , Marco Tortonese , Sean S. Cahill , Timothy G. Slater
发明人： Michael D. Kirk , Ian R. Smith , Marco Tortonese , Sean S. Cahill , Timothy G. Slater
IPC分类号： G01Q30/02 , G01Q20/04 , G01Q60/38 , H01J37/00
CPC分类号： G01Q20/04 , B82Y35/00 , G01Q60/38 , Y10S977/873
摘要： A cantilever for a scanning probe microscope is disclosed. The cantilever includes a piezoresistor for detecting the deflection of the cantilever, and a tip which is formed integrally with the cantilever. A process of fabricating such a cantilever is also disclosed, the process yielding a tip which has a high aspect ratio and a small radius of curvature at its apex. A combined atomic force/lateral force microscope including two or more piezoresistors responsive to both the bending and torsion of the cantilever is also disclosed.
摘要翻译：公开了一种用于扫描探针显微镜的悬臂。悬臂包括用于检测悬臂的偏转的压电电阻器和与悬臂一体形成的尖端。还公开了制造这种悬臂的方法，该方法产生在其顶点具有高纵横比和小曲率半径的尖端。还公开了包括响应于悬臂的弯曲和扭转的两个或更多个压敏电阻的组合的原子力/横向力显微镜。

2. 发明授权

US5393647A Method of making superhard tips for micro-probe microscopy and field emission 失效
标题翻译：制作超微观尖端的方法，用于微探针显微镜和场发射
公开(公告)号：US5393647A
公开(公告)日：1995-02-28
申请号：US92780
申请日：1993-07-16
申请人： Armand P. Neukermans , Timothy G. Slater , Linda E. Whittlesey , Sean S. Cahill
发明人： Armand P. Neukermans , Timothy G. Slater , Linda E. Whittlesey , Sean S. Cahill
IPC分类号： G01Q70/10 , B81C1/00 , C23C16/00 , G01Q70/14 , G01Q70/16 , H01J9/02 , H01J37/073 , H01L21/302
CPC分类号： G01Q70/16 , B81C1/00682 , B82Y35/00 , G01Q70/14 , H01J9/025 , B81B2201/12 , H01J2209/0226
摘要： Forming micro-probe tips for an atomic force microscope, a scanning tunneling microscope, a beam electron emission microscope, or for field emission, by first thinning a tip of a first material, such as silicon. The tips are then reacted with a second material, such as atoms from an organic or ammonia vapor, at a temperature of about 1000.degree. C..+-.200.degree. C. and vacuum conditions for several minutes. Vapors such as methane, propane or acetylene will be converted to SiC or WC while ammonia will be converted to Si.sub.3 N.sub.4. The converted material will have different physical, chemical and electrical properties. For example, a SiC tip will be superhard, approaching diamond in hardness. Electrically conductive tips are suitable for field emission.
摘要翻译：通过首先使诸如硅的第一材料的尖端变薄，形成用于原子力显微镜，扫描隧道显微镜，束电子发射显微镜或用于场发射的微探针尖端。然后将尖端与第二种材料（例如来自有机或氨蒸汽的原子）在约1000℃±200℃的温度和真空条件下反应数分钟。蒸气如甲烷，丙烷或乙炔将转化为SiC或WC，而氨将转化为Si3N4。转换的材料将具有不同的物理，化学和电学性能。例如，SiC尖端将是超硬的，接近金刚石的硬度。导电尖端适用于场发射。

3. 发明申请

US20120066894A1 LOW COST HIGH FREQUENCY DEVICE PACKAGE AND METHODS 有权
公开(公告)号：US20120066894A1
公开(公告)日：2012-03-22
申请号：US13308351
申请日：2011-11-30
申请人： Eric A. Sanjuan , Sean S. Cahill
发明人： Eric A. Sanjuan , Sean S. Cahill
IPC分类号： H01P11/00
CPC分类号： H01L23/66 , H01L23/047 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2223/6627 , H01L2224/05599 , H01L2224/32245 , H01L2224/45014 , H01L2224/45015 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/48471 , H01L2224/4903 , H01L2224/73265 , H01L2224/8592 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/1423 , H01L2924/181 , H01L2924/1903 , H01L2924/19032 , H01L2924/19033 , H01L2924/19042 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H05K1/0243 , Y10T29/49002 , Y10T29/49018 , Y10T29/49121 , Y10T29/49126 , Y10T29/49144 , H01L2224/83 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2224/48227 , H01L2224/45099 , H01L2924/20752
摘要： A low-cost high-frequency electronic device package and associated fabrication method are described wherein waveguide structures are formed from the high frequency device to the package lead transition. The package lead transition is optimized to take advantage of waveguide interconnect structure.

4. 发明授权

US09960468B2 Metalized molded plastic components for millimeter wave electronics and method for manufacture 有权
公开(公告)号：US09960468B2
公开(公告)日：2018-05-01
申请号：US13607539
申请日：2012-09-07
申请人： Sean S. Cahill , Eric A. Sanjuan
发明人： Sean S. Cahill , Eric A. Sanjuan
IPC分类号： H01P1/208 , H01P1/213 , H01P5/12 , H01P1/207 , H01P11/00
CPC分类号： H01P1/208 , H01P1/207 , H01P1/213 , H01P1/2138 , H01P5/12 , H01P11/002 , Y10T29/49016
摘要： Waveguide components that have a high degree of performance accuracy over the temperature range of interest are provided. The components require no post-formation trimming steps, are light-weight, and dimensionally stable. In addition, a method for the manufacture of these millimeter wave components is provided.

5. 发明授权

US08839508B2 Method of making a high frequency device package 有权
标题翻译：制造高频器件封装的方法
公开(公告)号：US08839508B2
公开(公告)日：2014-09-23
申请号：US13308351
申请日：2011-11-30
申请人： Eric A. Sanjuan , Sean S. Cahill
发明人： Eric A. Sanjuan , Sean S. Cahill
IPC分类号： H01R43/00 , H01L23/66 , H01L23/00 , H01L23/047 , H05K1/02
CPC分类号： H01L23/66 , H01L23/047 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2223/6627 , H01L2224/05599 , H01L2224/32245 , H01L2224/45014 , H01L2224/45015 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/48471 , H01L2224/4903 , H01L2224/73265 , H01L2224/8592 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/1423 , H01L2924/181 , H01L2924/1903 , H01L2924/19032 , H01L2924/19033 , H01L2924/19042 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H05K1/0243 , Y10T29/49002 , Y10T29/49018 , Y10T29/49121 , Y10T29/49126 , Y10T29/49144 , H01L2224/83 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2224/48227 , H01L2224/45099 , H01L2924/20752
摘要： A fabrication method for a low-cost high-frequency electronic device package having waveguide structures formed from the high frequency device to the package lead transition. The package lead transition is optimized to take advantage of waveguide interconnect structure.
摘要翻译：一种低成本高频电子器件封装的制造方法，其具有由高频器件到封装引线转变形成的波导结构。封装引线转换优化，以利用波导互连结构。

6. 发明申请

US20100010531A1 Tissue Expansion Devices 审中-公开
标题翻译：组织扩张装置
公开(公告)号：US20100010531A1
公开(公告)日：2010-01-14
申请号：US12560160
申请日：2009-09-15
申请人： Tadmor Shalon , Daniel Jacobs , Sean S. Cahill , Scott Wetenkamp
发明人： Tadmor Shalon , Daniel Jacobs , Sean S. Cahill , Scott Wetenkamp
IPC分类号： A61M29/00
CPC分类号： A61F2/12 , A61B90/02 , A61F2250/0002 , A61F2250/0003
摘要： A tissue expansion device is provided. The device includes an expandable compartment adapted for implanting in a body of a subject; and a gas source adapted for implanting in a body of a subject and operably connected to the expandable compartment for inflation thereof by transfer of a gas thereto.
摘要翻译：提供了一种组织膨胀装置。该装置包括适于植入受试者体内的可膨胀隔室; 以及气体源，其适于植入受试者的身体并且可操作地连接到可膨胀隔室，以通过将气体转移到其上而使其膨胀。

7. 发明授权

US06229190B1 Compensated semiconductor pressure sensor 有权
标题翻译：补偿半导体压力传感器
公开(公告)号：US06229190B1
公开(公告)日：2001-05-08
申请号：US09216073
申请日：1998-12-18
申请人： Janusz Bryzek , David W. Burns , Steven S. Nasiri , Sean S. Cahill
发明人： Janusz Bryzek , David W. Burns , Steven S. Nasiri , Sean S. Cahill
IPC分类号： H01L2982
CPC分类号： G01L19/147 , G01L9/0042 , G01L9/0054 , G01L19/0038 , G01L19/143 , G01P2015/084 , H01L2224/48091 , H01L2224/48247 , H01L2924/16151 , H01L2924/16195 , H01L2924/00014
摘要： A semiconductor pressure sensor compatible with fluid and gaseous media applications is described. The semiconductor pressure sensor includes a sensor capsule having a semiconductor die and a silicon cap that is bonded to the semiconductor die. The semiconductor die includes a diaphragm that incorporates piezoresistive sensors thereon, and a stress isolation mechanism for isolating the diaphragm from packaging and mounting stresses. The silicon cap includes a cavity for allowing the diaphragm to deflect. The semiconductor pressure sensor further includes a pressure port that is hermetically attached to the semiconductor die. The sensor capsule and pressure port may be incorporated into a plastic housing. In one embodiment, the silicon cap is bonded to the semiconductor die to form an integral pressure reference. In an alternative embodiment, a second pressure port is provided for allowing gage or differential pressure measurements. A technique for incorporating the piezoresistive sensors is also described. An ASIC may be optionally attached to the silicon cap, and/or active electronic circuitry may be fabricated on the semiconductor die or silicon cap. Additional coatings may be optionally applied to the pressure port and semiconductor die for enhancing chemical resistance.
摘要翻译：描述了与流体和气体介质应用相兼容的半导体压力传感器。半导体压力传感器包括具有半导体管芯和粘合到半导体管芯上的硅帽的传感器封装。半导体管芯包括在其上结合有压阻传感器的隔膜以及用于将隔膜与封装和安装应力隔离的应力隔离机构。硅帽包括用于允许隔膜偏转的空腔。半导体压力传感器还包括气密地附接到半导体管芯的压力端口。传感器胶囊和压力端口可以结合到塑料外壳中。在一个实施例中，硅帽结合到半导体管芯以形成整体的压力参考。在替代实施例中，提供了用于允许量规或差压测量的第二压力端口。还描述了一种用于结合压阻传感器的技术。 ASIC可以可选地附接到硅帽，和/或有源电子电路可以制造在半导体管芯或硅帽上。另外的涂层可以任选地施加到压力端口和半导体管芯上以提高耐化学性。

8. 发明授权

US5484745A Method for forming a semiconductor sensor 失效
标题翻译：半导体传感器的形成方法
公开(公告)号：US5484745A
公开(公告)日：1996-01-16
申请号：US141055
申请日：1993-10-26
申请人： Sean S. Cahill
发明人： Sean S. Cahill
IPC分类号： G01L9/12 , G01L9/00 , H01L29/84 , H01L27/20
CPC分类号： G01L9/0042 , Y10S148/012 , Y10S148/159 , Y10S438/928 , Y10S438/977
摘要： A method for forming at least one corrugation member in a semiconductor material, contains the step of: forming a semiconductor material layer onto a substrate, masking a first surface of the semiconductor material, etching the first surface to form first cavity thereon, removing a mask from the semiconductor material, masking the first surface and second surface of the semiconductor material, etching the second surface to form second cavity thereon, the second cavity being defined into the first cavity, removing the mask from the semiconductor material, depositing a specified masking material selected in accordance with a characteristic of the substrate onto the semiconductor material, etching an unmasked portion of the semiconductor material and depositing the same material as the abovementioned specified masking material selected in accordance with a characteristic of the substrate onto the semiconductor material and the specified masking material which has been deposited onto the semiconductor to form the corrugation member.
摘要翻译：一种用于在半导体材料中形成至少一个波纹构件的方法，包括以下步骤：在衬底上形成半导体材料层，掩蔽半导体材料的第一表面，蚀刻第一表面以在其上形成第一腔，去除掩模从所述半导体材料掩蔽所述半导体材料的第一表面和第二表面，蚀刻所述第二表面以在其上形成第二腔，所述第二腔被限定到所述第一腔中，从所述半导体材料移除所述掩模，沉积特定的掩蔽材料根据衬底的特性被选择到半导体材料上，蚀刻半导体材料的未掩模部分并将与根据衬底的特性选择的上述指定掩模材料相同的材料沉积到半导体材料上并且将特定掩模已经沉积在s上的材料以形成波纹构件。

9. 发明授权

US08581113B2 Low cost high frequency device package and methods 有权
标题翻译：低成本的高频器件封装和方法
公开(公告)号：US08581113B2
公开(公告)日：2013-11-12
申请号：US11960681
申请日：2007-12-19
申请人： Eric A. Sanjuan , Sean S. Cahill
发明人： Eric A. Sanjuan , Sean S. Cahill
IPC分类号： H05K1/11
CPC分类号： H01L23/66 , H01L23/047 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2223/6627 , H01L2224/05599 , H01L2224/32245 , H01L2224/45014 , H01L2224/45015 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/48471 , H01L2224/4903 , H01L2224/73265 , H01L2224/8592 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/1423 , H01L2924/181 , H01L2924/1903 , H01L2924/19032 , H01L2924/19033 , H01L2924/19042 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H05K1/0243 , Y10T29/49002 , Y10T29/49018 , Y10T29/49121 , Y10T29/49126 , Y10T29/49144 , H01L2224/83 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2224/48227 , H01L2224/45099 , H01L2924/20752
摘要： A low-cost high-frequency electronic device package and associated fabrication method are described wherein waveguide structures are formed from the high frequency device to the package lead transition. The package lead transition is optimized to take advantage of waveguide interconnect structure.
摘要翻译：描述了一种低成本高频电子器件封装和相关的制造方法，其中波导结构从高频器件形成为封装引线转变。封装引线转换优化，以利用波导互连结构。

10. 发明授权

US06346742B1 Chip-scale packaged pressure sensor 失效
标题翻译：芯片级封装压力传感器
公开(公告)号：US06346742B1
公开(公告)日：2002-02-12
申请号：US09190500
申请日：1998-11-12
申请人： Janusz Bryzek , David W. Burns , Sean S. Cahill , Steven S. Nasiri
发明人： Janusz Bryzek , David W. Burns , Sean S. Cahill , Steven S. Nasiri
IPC分类号： H01L2312
CPC分类号： G01L19/147 , G01L19/0038 , G01P2015/0828 , H01L2224/48091 , H01L2924/01322 , H01L2924/10253 , H01L2924/00014 , H01L2924/00
摘要： A chip-scale sensor package is described. In one embodiment, the chip-scale sensor package includes a semiconductor substrate having a sensor region, and a semiconductor cap having a recess. The semiconductor cap is bonded to the semiconductor substrate with a thermocompression bond to form a cavity therebetween. The semiconductor substrate is bonded to the semiconductor cap using different types of materials. The semiconductor substrate and/or the semiconductor cap may optionally include a semiconductor device such as an electronically trimmable integrated circuit fabricated thereon. In addition, the semiconductor substrate may optionally include an integral stress isolation flexible region for isolation of the sensor region.
摘要翻译：描述了芯片级传感器封装。在一个实施例中，芯片级传感器封装包括具有传感器区域的半导体衬底和具有凹部的半导体盖。半导体盖通过热压接合到半导体衬底上以在其间形成空腔。使用不同类型的材料将半导体衬底接合到半导体帽。半导体衬底和/或半导体帽可以可选地包括诸如其上制造的电子可调整体集成电路的半导体器件。此外，半导体衬底可以可选地包括用于隔离传感器区域的整体应力隔离柔性区域。

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