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1. 发明授权

US09938135B2 Stress decoupled piezoresistive relative pressure sensor and method for manufacturing the same 有权
公开(公告)号：US09938135B2
公开(公告)日：2018-04-10
申请号：US15628926
申请日：2017-06-21
申请人： Infineon Technologies Dresden GmbH
发明人： Steffen Bieselt
IPC分类号： B81B7/00 , B81C1/00 , G01L9/00
CPC分类号： B81B7/0054 , B81B7/02 , B81B2201/0264 , B81C1/00063 , B81C1/00682 , G01L9/00
摘要： Embodiments provide a MEMS (Micro Electro Mechanical System) pressure sensor comprising a semiconductor substrate, wherein the semiconductor substrate comprises a stress decoupling structure adapted to stress decouple a first portion of the semiconductor substrate from a second portion of the semiconductor substrate, wherein the first portion of the semiconductor substrate comprises a first buried empty space, wherein the second portion of the semiconductor substrate comprises a second buried empty space, and wherein the semiconductor substrate comprises a pressure channel fluidically connecting the first buried empty space and the second buried empty space.

2. 发明授权

US09908770B2 Micromechanical structure 有权
公开(公告)号：US09908770B2
公开(公告)日：2018-03-06
申请号：US15317646
申请日：2015-05-29
申请人： Robert Bosch GmbH
发明人： David Bendes
IPC分类号： H01L29/84 , B81B7/00 , B81C1/00
CPC分类号： B81B7/0016 , B81B2203/0118 , B81B2203/053 , B81B2207/015 , B81C1/00682 , B81C2201/0171
摘要： A micromechanical structure is described, including: at least one elastically deformable first area, which includes a defined piezoelectrically doped second area, at least in sections; at least one fourth area, into which the electrical charges generated in the second area may be conducted; and at least one third area connected electrically to the second and fourth area, in which an electrical current flowing through is convertible into thermal energy.

3. 发明申请

US20170170059A1 MEMS GRID FOR MANIPULATING STRUCTURAL PARAMETERS OF MEMS DEVICES 审中-公开
公开(公告)号：US20170170059A1
公开(公告)日：2017-06-15
申请号：US15442085
申请日：2017-02-24
申请人： MEMS Drive, Inc.
发明人： Roman Gutierrez , Tony Tang , Xiaolei Liu , Guiqin Wang , Matthew NG
IPC分类号： H01L21/768 , H01L23/485
CPC分类号： H01L21/76816 , B81B3/0045 , B81B7/0029 , B81B2203/0353 , B81C1/00674 , B81C1/00682 , B81C2201/0112 , B81C2201/0135 , H01L21/768 , H01L21/76898 , H01L23/485 , H01L2924/00 , H01L2924/00014 , H01L2924/0002 , H01L2924/1461 , H01L2924/181
摘要： A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.

4. 发明申请

US20170166439A1 Metallizing MEMS Devices 有权
公开(公告)号：US20170166439A1
公开(公告)日：2017-06-15
申请号：US14963998
申请日：2015-12-09
申请人： Analog Devices, Inc.
发明人： Bradley C. Kaanta
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/0006 , B81B2201/0235 , B81B2201/0242 , B81B2203/0118 , B81B2207/015 , B81B2207/07 , B81C1/0015 , B81C1/00682 , B81C1/00698 , B81C2201/0161 , B81C2201/0176
摘要： Various embodiments produce a semiconductor device, such a MEMS device, having metallized structures formed by replacing a semiconductor structure with a metal structure. Some embodiments expose a semiconductor structure to one or more a reacting gasses, such as gasses including tungsten or molybdenum.

5. 发明授权

US09403672B2 Chip package and method of manufacturing the same 有权
标题翻译：芯片封装及其制造方法
公开(公告)号：US09403672B2
公开(公告)日：2016-08-02
申请号：US14819174
申请日：2015-08-05
申请人： XINTEC INC.
发明人： Chien-Min Lin
IPC分类号： B81B7/00 , H01L21/48 , B81C1/00 , H01L23/498
CPC分类号： B81B7/007 , B81B7/0058 , B81B2201/0264 , B81B2203/0118 , B81B2207/096 , B81C1/00301 , B81C1/00682 , B81C2203/0118 , H01L21/4853 , H01L21/486 , H01L23/49816 , H01L23/49827 , H01L23/49838 , H01L2924/0002 , H01L2924/00
摘要： A method includes forming a bump on a lower surface of an interposer. A first insulation layer is formed to cover the lower surface and bump. A trench is formed extending from the lower towards an upper surface of the interposer. A polymer supporting adhesive layer is formed to surround the bump and couples between the interposer and a semiconductor chip. The semiconductor chip has at least a sensing component and a conductive pad electrically connected to the sensing component, and the bump is connected to the conductive pad. A via is formed extending from the upper towards the lower surface. A second insulation layer is formed to cover the upper surface and the via. A redistribution layer is formed on the second insulation layer and in the via. A packaging layer is formed to cover the redistribution layer and has a second opening.
摘要翻译：一种方法包括在插入器的下表面上形成凸块。形成第一绝缘层以覆盖下表面和凸起。形成从插入件的下表面延伸到上表面的沟槽。形成聚合物支持粘合剂层以围绕凸起并且在插入器和半导体芯片之间耦合。半导体芯片具有至少一个感测部件和电连接到感测部件的导电焊盘，并且凸块连接到导电焊盘。通孔形成为从上部向下表面延伸。形成第二绝缘层以覆盖上表面和通孔。在第二绝缘层和通孔中形成再分布层。形成包装层以覆盖再分布层并具有第二开口。

6. 发明申请

US20160167960A1 Method for Producing a Microelectromechanical Transducer 有权
标题翻译：微机电传感器的制造方法
公开(公告)号：US20160167960A1
公开(公告)日：2016-06-16
申请号：US14909105
申请日：2014-07-02
申请人： EPCOS AG
发明人： Marcel GIESEN , Thomas METZGER , Phillip EKKELS , Ansgar SCHÄUFELE
IPC分类号： B81C1/00
CPC分类号： B81C1/00682 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81C1/00666 , B81C99/004 , G01L9/0073 , H04R31/003
摘要： A method can be used for producing a microelectromechanical transducer. A plurality of microelectromechanical transducers are produced on a single wafer. Each transducer includes a diaphragm. The wafer is divided into at least a first and a second region. The mechanical tensions of a random sample of diaphragms of the first region are established and the values are compared with a predetermined desired value. The mechanical tensions of a random sample of diaphragms of the second region are established and the values are compared with the predetermined desired value. The tensions of the diaphragms in the first region are adjusted to the predetermined desired value, and the tensions of the diaphragms in the second region are adjusted to the predetermined desired value.
摘要翻译：一种方法可用于制造微机电换能器。在单个晶片上产生多个微机电换能器。每个换能器包括隔膜。晶片被分成至少第一和第二区域。建立第一区域的膜片的随机样品的机械张力，并将其与预定的期望值进行比较。建立第二区域的膜片的随机样品的机械张力，并将其与预定的期望值进行比较。将第一区域中的膜片的张力调整到预定的期望值，并且将第二区域中的膜片的张力调整到预定的期望值。

7. 发明授权

US09352955B2 MEMS pressure sensor with improved insensitivity to thermo-mechanical stress 有权
标题翻译： MEMS压力传感器对热机械应力的敏感性提高
公开(公告)号：US09352955B2
公开(公告)日：2016-05-31
申请号：US14537898
申请日：2014-11-10
申请人： Maxim Integrated Products, Inc.
发明人： Antonio Molfese , Luca Coronato , Gabriele Cazzaniga , Luigi Esposito
IPC分类号： H01L21/84 , B81B3/00 , B81C1/00
CPC分类号： B81B3/0078 , B81B7/0054 , B81B2201/0264 , B81B2203/0127 , B81B2203/04 , B81C1/00682 , G01L9/0073
摘要： This invention relates generally to semiconductor manufacturing and packaging and more specifically to semiconductor manufacturing in MEMS (Microelectromechanical systems) inertial sensing products. Embodiments of the present invention improve pressure sensor performance (e.g., absolute and relative accuracy) by increasing pressure insensitivity to changes in thermo-mechanical stress. The pressure insensitivity can be achieved by using the array of pressure sensing membranes, suspended sensing electrodes, and dielectric anchors.
摘要翻译：本发明一般涉及半导体制造和封装，更具体地涉及MEMS（微机电系统）惯性感测产品中的半导体制造。本发明的实施例通过增加对热机械应力变化的压力不敏感性来改善压力传感器性能（例如，绝对和相对精度）。压力不敏感性可以通过使用压力传感膜，悬浮感应电极和电介质锚的阵列来实现。

8. 发明授权

US09171966B2 Implantation of gaseous chemicals into cavities formed in intermediate dielectrics layers for subsequent thermal diffusion release 有权
标题翻译：将气态化学品植入到形成于中间介质层中的空腔中，用于随后的热扩散释放
公开(公告)号：US09171966B2
公开(公告)日：2015-10-27
申请号：US14352057
申请日：2012-04-19
申请人： Willibrordus Gerardus Van Den Hoek , Robertus Petrus Van Kampen , Richard L. Knipe , Charles Gordon Smith
发明人： Willibrordus Gerardus Van Den Hoek , Robertus Petrus Van Kampen , Richard L. Knipe , Charles Gordon Smith
IPC分类号： H01L29/84 , B81C1/00 , B81B3/00 , B81B7/00
CPC分类号： H01L29/84 , B81B3/0059 , B81B7/0035 , B81B2203/0127 , B81C1/00285 , B81C1/00293 , B81C1/00682
摘要： The present invention generally relates to methods for increasing the lifetime of MEMS devices by reducing the landing velocity on switching by introducing gas into the cavity surrounding the switching element of the MEMS device. The gas is introduced using ion implantation into a cavity close to the cavity housing the switching element and connected to that cavity by a channel through which the gas can flow from one cavity to the other. The implantation energy is chosen to implant many of the atoms close to the inside roof and floor of the cavity so that on annealing those atoms diffuse into the cavity. The gas provides gas damping which reduces the kinetic energy of the switching MEMS device which then should have a longer lifetime.
摘要翻译：本发明一般涉及通过将气体引入到围绕MEMS器件的开关元件的空腔中来降低开关时降低着陆速度来增加MEMS器件寿命的方法。使用离子注入将气体引入到容纳开关元件的腔附近的空腔中，并且通过通道将气体连接到该空腔，气体可以通过该通道从一个空腔流到另一个空腔。选择植入能量以植入靠近腔室的内部屋顶和底部的许多原子，使得在退火时，这些原子扩散到空腔中。气体提供气体阻尼，其降低开关MEMS器件的动能，然后应该具有更长的寿命。

9. 发明授权

US09142857B2 Apparatus for harvesting and storing piezoelectric energy and manufacturing method thereof 有权
标题翻译：用于收集和存储压电能的装置及其制造方法
公开(公告)号：US09142857B2
公开(公告)日：2015-09-22
申请号：US13595070
申请日：2012-08-27
申请人： Sang Kyun Lee , Yil Suk Yang
发明人： Sang Kyun Lee , Yil Suk Yang
IPC分类号： H02N2/18 , H01M10/052 , H01L41/113 , H01M6/40 , H01M10/0585
CPC分类号： B81C1/00682 , B81B3/0051 , B81C1/0015 , B81C2201/0132 , B81C2201/053 , H01L41/094 , H01L41/1134 , H01L41/1136 , H01M6/40 , H01M10/052 , H01M10/0585 , H02N2/18 , H02N2/181 , H02N2/188 , H03H3/02 , H03H3/08 , Y02E60/122 , Y10T29/42 , Y10T29/43
摘要： Disclosed are an apparatus for harvesting/storing piezoelectric energy, including: a substrate having a groove at a side thereon; a piezoelectric MEMS cantilever having an end fixed to the substrate and the other end floating above the groove, and configured to convert and store an external vibration into electric energy; and a mass formed at one end of the piezoelectric MEMS cantilever and configured to apply a vibration, and a manufacturing method thereof.
摘要翻译：公开了一种用于收集/存储压电能量的装置，包括：在其侧面具有凹槽的基板; 压电MEMS悬臂，其一端固定在基板上，另一端悬在凹槽上方，并构造成将外部振动转换并存储成电能; 以及形成在压电MEMS悬臂的一端并构造成施加振动的质量及其制造方法。

10. 发明授权

US08502329B2 Micro-electro-mechanical systems (MEMS) device and method for fabricating the same 有权
标题翻译：微机电系统（MEMS）装置及其制造方法
公开(公告)号：US08502329B2
公开(公告)日：2013-08-06
申请号：US13224297
申请日：2011-09-01
申请人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
发明人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
IPC分类号： H01L29/84
CPC分类号： B81C1/00698 , B81C1/00682 , H01G5/18 , H04R19/005 , H04R19/04
摘要： A MEMS device includes a substrate. The substrate has a plurality of through holes in the substrate within a diaphragm region and optionally an indent space from the second surface at the diaphragm region. A first dielectric structural layer is then disposed over the substrate from the first surface, wherein the first dielectric structural layer has a plurality of openings corresponding to the through holes, wherein each of the through holes remains exposed by the first dielectric structural layer. A second dielectric structural layer with a chamber is disposed over the first dielectric structural layer, wherein the chamber exposes the openings of the first dielectric structural layer and the through holes of the substrate to connect to the indent space. A MEMS diaphragm is embedded in the second dielectric structural layer above the chamber, wherein an air gap is formed between the substrate and the MEMS diaphragm.
摘要翻译： MEMS器件包括衬底。衬底在膜片区域内的衬底中具有多个通孔，并且可选地在隔膜区域处具有与第二表面相邻的凹陷空间。然后，第一介电结构层从第一表面设置在衬底上，其中第一介电结构层具有对应于通孔的多个开口，其中每个通孔保持被第一介电结构层暴露。具有腔室的第二电介质结构层设置在第一介电结构层上，其中腔室暴露第一介电结构层的开口和衬底的通孔以连接到凹陷空间。 MEMS隔膜嵌入在腔室上方的第二电介质结构层中，其中在衬底和MEMS隔膜之间形成气隙。

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