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    • 5. 发明授权
    • Compensated semiconductor pressure sensor
    • 补偿半导体压力传感器
    • US06229190B1
    • 2001-05-08
    • US09216073
    • 1998-12-18
    • Janusz BryzekDavid W. BurnsSteven S. NasiriSean S. Cahill
    • Janusz BryzekDavid W. BurnsSteven S. NasiriSean S. Cahill
    • H01L2982
    • G01L19/147G01L9/0042G01L9/0054G01L19/0038G01L19/143G01P2015/084H01L2224/48091H01L2224/48247H01L2924/16151H01L2924/16195H01L2924/00014
    • A semiconductor pressure sensor compatible with fluid and gaseous media applications is described. The semiconductor pressure sensor includes a sensor capsule having a semiconductor die and a silicon cap that is bonded to the semiconductor die. The semiconductor die includes a diaphragm that incorporates piezoresistive sensors thereon, and a stress isolation mechanism for isolating the diaphragm from packaging and mounting stresses. The silicon cap includes a cavity for allowing the diaphragm to deflect. The semiconductor pressure sensor further includes a pressure port that is hermetically attached to the semiconductor die. The sensor capsule and pressure port may be incorporated into a plastic housing. In one embodiment, the silicon cap is bonded to the semiconductor die to form an integral pressure reference. In an alternative embodiment, a second pressure port is provided for allowing gage or differential pressure measurements. A technique for incorporating the piezoresistive sensors is also described. An ASIC may be optionally attached to the silicon cap, and/or active electronic circuitry may be fabricated on the semiconductor die or silicon cap. Additional coatings may be optionally applied to the pressure port and semiconductor die for enhancing chemical resistance.
    • 描述了与流体和气体介质应用相兼容的半导体压力传感器。 半导体压力传感器包括具有半导体管芯和粘合到半导体管芯上的硅帽的传感器封装。 半导体管芯包括在其上结合有压阻传感器的隔膜以及用于将隔膜与封装和安装应力隔离的应力隔离机构。 硅帽包括用于允许隔膜偏转的空腔。 半导体压力传感器还包括气密地附接到半导体管芯的压力端口。 传感器胶囊和压力端口可以结合到塑料外壳中。 在一个实施例中,硅帽结合到半导体管芯以形成整体的压力参考。 在替代实施例中,提供了用于允许量规或差压测量的第二压力端口。 还描述了一种用于结合压阻传感器的技术。 ASIC可以可选地附接到硅帽,和/或有源电子电路可以制造在半导体管芯或硅帽上。 另外的涂层可以任选地施加到压力端口和半导体管芯上以提高耐化学性。
    • 6. 发明授权
    • Method for forming a semiconductor sensor
    • 半导体传感器的形成方法
    • US5484745A
    • 1996-01-16
    • US141055
    • 1993-10-26
    • Sean S. Cahill
    • Sean S. Cahill
    • G01L9/12G01L9/00H01L29/84H01L27/20
    • G01L9/0042Y10S148/012Y10S148/159Y10S438/928Y10S438/977
    • A method for forming at least one corrugation member in a semiconductor material, contains the step of: forming a semiconductor material layer onto a substrate, masking a first surface of the semiconductor material, etching the first surface to form first cavity thereon, removing a mask from the semiconductor material, masking the first surface and second surface of the semiconductor material, etching the second surface to form second cavity thereon, the second cavity being defined into the first cavity, removing the mask from the semiconductor material, depositing a specified masking material selected in accordance with a characteristic of the substrate onto the semiconductor material, etching an unmasked portion of the semiconductor material and depositing the same material as the abovementioned specified masking material selected in accordance with a characteristic of the substrate onto the semiconductor material and the specified masking material which has been deposited onto the semiconductor to form the corrugation member.
    • 一种用于在半导体材料中形成至少一个波纹构件的方法,包括以下步骤:在衬底上形成半导体材料层,掩蔽半导体材料的第一表面,蚀刻第一表面以在其上形成第一腔,去除掩模 从所述半导体材料掩蔽所述半导体材料的第一表面和第二表面,蚀刻所述第二表面以在其上形成第二腔,所述第二腔被限定到所述第一腔中,从所述半导体材料移除所述掩模,沉积特定的掩蔽材料 根据衬底的特性被选择到半导体材料上,蚀刻半导体材料的未掩模部分并将与根据衬底的特性选择的上述指定掩模材料相同的材料沉积到半导体材料上并且将特定掩模 已经沉积在s上的材料 以形成波纹构件。
    • 9. 发明授权
    • Piezoresistive pressure sensor with sculpted diaphragm
    • 压电式压力传感器,带雕刻膜片
    • US6006607A
    • 1999-12-28
    • US144118
    • 1998-08-31
    • Janusz BryzekDavid W. BurnsSean S. CahillSteven S. NasiriJames B. Starr
    • Janusz BryzekDavid W. BurnsSean S. CahillSteven S. NasiriJames B. Starr
    • G01L9/00G01L9/06
    • G01L9/0042G01L9/0054
    • The present invention is a semiconductor pressure sensor. In one embodiment, the semiconductor pressure sensor includes a diaphragm having a first thickness and at least cone raised boss that is coupled to a first side of the diaphragm. The at least one raised boss increases the diaphragm thickness in the region occupied by the at least one raised boss to a second thickness. A plurality of piezoresistors are disposed on a second side of the diaphragm in regions of the first thickness. In another embodiment, a semiconductor pressure sensor diaphragm includes at least one raised boss disposed along a central axis on a first side of the diaphragm. At least two raised bridge regions are disposed along the central axis, interconnecting the at least one raised boss and a diaphragm edge. Each raised bridge region is narrower than the raised boss. A plurality of piezoresistors are disposed on the raised bridge regions of the diaphragm along the central axis.
    • 本发明是半导体压力传感器。 在一个实施例中,半导体压力传感器包括具有第一厚度和至少锥形凸起的隔膜,该凸起联接到隔膜的第一侧。 所述至少一个凸起凸台将所述至少一个凸起凸起所占据的区域中的隔膜厚度增加到第二厚度。 多个压电电阻器设置在第一厚度的区域中的隔膜的第二侧上。 在另一个实施例中,半导体压力传感器膜片包括至少一个凸起的凸起部分,其沿着中心轴线设置在隔膜的第一侧上。 至少两个凸起的桥接区域沿着中心轴线布置,将至少一个凸起的凸起和隔膜边缘互连。 每个凸起的桥梁区域比凸起的凸起更窄。 多个压电电阻器沿着中心轴设置在隔膜的凸起的桥接区域上。