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1. 发明授权

US5769991A Method and apparatus for wafer bonding 失效
标题翻译：晶圆接合方法及装置
公开(公告)号：US5769991A
公开(公告)日：1998-06-23
申请号：US200432
申请日：1994-02-23
申请人： Yoshihiro Miyazawa , Yasunori Ohkubo
发明人： Yoshihiro Miyazawa , Yasunori Ohkubo
IPC分类号： H01L21/02 , H01L21/20 , H01L27/12 , H01L21/304
CPC分类号： H01L21/67092 , H01L21/2007 , Y10S148/012 , Y10S148/135 , Y10S148/159 , Y10S438/909
摘要： A method of wafer bonding with less elongation and contraction of wafers at the time of and after the bonding of the wafers is disclosed. In the method of wafer bonding, wafers are bonded together with sticking force of their surfaces to form a bonded wafer. The bonding is done by selecting the pressure of the gas between the wafers to be lower than the atmospheric pressure, for instance, and also selecting the kind of gas between the wafers to H.sub.2, for instance.
摘要翻译：公开了一种晶片接合方法，该方法在晶片接合之后和之后具有较小的晶片伸长率和收缩率。在晶片接合的方法中，晶片以其表面的粘附力结合在一起以形成接合晶片。例如，通过将晶片之间的气体的压力选择为低于大气压力来进行接合，并且还例如选择晶片之间的气体的种类。

2. 发明授权

US5484745A Method for forming a semiconductor sensor 失效
标题翻译：半导体传感器的形成方法
公开(公告)号：US5484745A
公开(公告)日：1996-01-16
申请号：US141055
申请日：1993-10-26
申请人： Sean S. Cahill
发明人： Sean S. Cahill
IPC分类号： G01L9/12 , G01L9/00 , H01L29/84 , H01L27/20
CPC分类号： G01L9/0042 , Y10S148/012 , Y10S148/159 , Y10S438/928 , Y10S438/977
摘要： A method for forming at least one corrugation member in a semiconductor material, contains the step of: forming a semiconductor material layer onto a substrate, masking a first surface of the semiconductor material, etching the first surface to form first cavity thereon, removing a mask from the semiconductor material, masking the first surface and second surface of the semiconductor material, etching the second surface to form second cavity thereon, the second cavity being defined into the first cavity, removing the mask from the semiconductor material, depositing a specified masking material selected in accordance with a characteristic of the substrate onto the semiconductor material, etching an unmasked portion of the semiconductor material and depositing the same material as the abovementioned specified masking material selected in accordance with a characteristic of the substrate onto the semiconductor material and the specified masking material which has been deposited onto the semiconductor to form the corrugation member.
摘要翻译：一种用于在半导体材料中形成至少一个波纹构件的方法，包括以下步骤：在衬底上形成半导体材料层，掩蔽半导体材料的第一表面，蚀刻第一表面以在其上形成第一腔，去除掩模从所述半导体材料掩蔽所述半导体材料的第一表面和第二表面，蚀刻所述第二表面以在其上形成第二腔，所述第二腔被限定到所述第一腔中，从所述半导体材料移除所述掩模，沉积特定的掩蔽材料根据衬底的特性被选择到半导体材料上，蚀刻半导体材料的未掩模部分并将与根据衬底的特性选择的上述指定掩模材料相同的材料沉积到半导体材料上并且将特定掩模已经沉积在s上的材料以形成波纹构件。

3. 发明授权

US5334835A Probe drive mechanism and electronic device which uses the same 失效
标题翻译：探头驱动机构和使用相同的电子设备
公开(公告)号：US5334835A
公开(公告)日：1994-08-02
申请号：US951751
申请日：1992-09-28
申请人： Masaru Nakayama , Osamu Takamatsu , Takayuki Yagi , Keisuke Yamamoto , Takehiko Kawasaki , Yasuhiro Shimada , Yoshio Suzuki
发明人： Masaru Nakayama , Osamu Takamatsu , Takayuki Yagi , Keisuke Yamamoto , Takehiko Kawasaki , Yasuhiro Shimada , Yoshio Suzuki
IPC分类号： G01B7/34 , B81B3/00 , B81B7/02 , B81C1/00 , G01N37/00 , G01Q10/04 , G01Q60/10 , G01Q60/16 , G01Q70/06 , G01Q70/08 , G01Q70/16 , G01Q80/00 , G05D3/00 , G11B5/48 , G11B9/00 , G11B9/14 , H01L27/20 , H01L29/84 , H01J37/00
CPC分类号： G01Q60/16 , B82Y35/00 , G01Q70/06 , G11B9/14 , G11B9/1409 , G11B9/1418 , B82Y10/00 , G01Q80/00 , G11B5/486 , Y10S148/159 , Y10S977/732 , Y10S977/837 , Y10S977/861 , Y10S977/873 , Y10S977/875 , Y10S977/881 , Y10S977/947
摘要： A probe drive mechanism includes a cantilever portion in which a piezoelectric layer is disposed between electrode layers, and a circuit portion which is positioned adjacent to the cantilever portion and drives the cantilever. The cantilever portion and the circuit portion are formed on the same substrate. A protection layer covers the circuit portion and part of the substrate, and the cantilever portion is formed on the protection layer adjacent to the circuit portion.
摘要翻译：探针驱动机构包括悬臂部分，其中压电层设置在电极层之间，电路部分位于悬臂部分附近并驱动悬臂。悬臂部分和电路部分形成在相同的基板上。保护层覆盖电路部分和基板的一部分，并且悬臂部分形成在与电路部分相邻的保护层上。

4. 发明授权

US5169472A Method of making a multi-layer silicon structure 失效
标题翻译：制备多层硅结构的方法
公开(公告)号：US5169472A
公开(公告)日：1992-12-08
申请号：US669683
申请日：1991-03-14
申请人： Herbert Goebel
发明人： Herbert Goebel
IPC分类号： H01L21/02 , G01L9/00 , H01L21/18 , H01L29/84
CPC分类号： H01L21/187 , G01L9/0042 , Y10S148/012 , Y10S148/135 , Y10S148/159
摘要： Multi-layer silicon structures particularly micromechanical sensors, can be made by cleaning and polishing respective surfaces of two silicon wafers, assembling the wafers together under clean room conditions and adhering them together by temperature treatment. This method is improved by the pretreatment of the wafer surfaces using fuming nitric acid (e.g., 100% HNO.sub.3), rinsing with de-ionized water, drying, and temperature treatment at a lower temperature than was previously thought necessary, namely between 100.degree. and 400.degree. C. This has the advantage that such gentler treatment preserves previously-applied integrated circuit structures, which can therefore be applied before the wafer assembly steps. The method is particularly suitable for producing pressure sensors having a pressure-responsive silicon membrane, and an evaluation circuit integrated on the silicon wafer. Such sensors are suitable for use in motor vehicles for measuring engine pressures and for measuring brake fluid pressures in anti-lock braking systems (ABS).
摘要翻译：多层硅结构，特别是微机械传感器，可以通过清洁和抛光两个硅晶片的相应表面，在洁净室条件下将晶片组装在一起并通过温度处理将它们粘合在一起而制成。通过使用发烟硝酸（例如，100％HNO 3）对晶片表面进行预处理，用去离子水冲洗，干燥和温度处理在比以前认为必要的较低温度（即在100°和这具有这样的优点：这种温和的处理保留了先前应用的集成电路结构，因此可以在晶片组装步骤之前应用。该方法特别适用于制造具有压敏硅膜的压力传感器和集成在硅晶片上的评估电路。这种传感器适用于机动车辆，用于测量发动机压力并用于测量防抱死制动系统（ABS）中的制动液压力。

5. 发明授权

US5164339A Fabrication of oxynitride frontside microstructures 失效
标题翻译：氮氧化物前端微结构的制备
公开(公告)号：US5164339A
公开(公告)日：1992-11-17
申请号：US707931
申请日：1991-05-28
申请人： George E. Gimpelson
发明人： George E. Gimpelson
IPC分类号： G01L9/00
CPC分类号： G01L9/0042 , Y10S148/159
摘要： Method for producing a low stress silicon oxynitride microstructure on a semiconductor substrate at temperatures not higher than 500.degree. C. The method is particularly adapted for forming integrated silicon sensors where the oxynitride microstructure is fabricated on a substrate under conditions which do not harm the integrated circuit electronics.
摘要翻译：用于在不高于500℃的温度下在半导体衬底上生产低应力氮氧化硅微结构的方法。该方法特别适用于形成集成的硅传感器，其中氮氧化物微观结构在不损害集成电路的条件下制造在衬底上电子产品。

6. 发明授权

US5059556A Low stress polysilicon microstructures 失效
标题翻译：低应力多晶硅微结构
公开(公告)号：US5059556A
公开(公告)日：1991-10-22
申请号：US494828
申请日：1990-03-16
申请人： Duane T. Wilcoxen
发明人： Duane T. Wilcoxen
IPC分类号： B81B3/00 , G01F1/684 , G01L9/00 , H01L21/3205
CPC分类号： B81B3/0072 , G01F1/6845 , G01L9/0042 , H01L21/32053 , B81C2201/0167 , Y10S148/073 , Y10S148/159
摘要： Method for relieving stress in silicon microstructures by forming a silicide on the microstructures. Sensors comprising a stress-relieved silicon microstructure are also described.
摘要翻译：通过在微结构上形成硅化物来缓解硅微结构中的应力的方法。还描述了包括应力释放的硅微结构的传感器。

7. 发明申请

US20040110318A1 Method of manufacturing an external force detection sensor 有权
标题翻译：制造外力检测传感器的方法
公开(公告)号：US20040110318A1
公开(公告)日：2004-06-10
申请号：US10725874
申请日：2003-12-02
申请人： Murata Manufacturing Co., Ltd.
发明人： Takahiro Oguchi
IPC分类号： H01L021/00
CPC分类号： G01C19/5719 , B81B2201/025 , B81C1/00579 , B81C1/00587 , B81C2201/0132 , B81C2201/014 , G01P15/0802 , G01P15/125 , G01P2015/0814 , Y10S148/012 , Y10S148/135 , Y10S148/159
摘要： A method of manufacturing an external force detection sensor in which a sensor element is formed by through-hole dry etching of an element substrate, and an electrically conductive material is used as an etching stop layer during the dry etching.
摘要翻译：通过干式蚀刻中的蚀刻停止层，使用通过元件基板的贯通孔干蚀刻形成传感器元件的外力检测传感器的制造方法。

8. 发明授权

US5700702A Method for manufacturing an acceleration sensor 失效
标题翻译：加速度传感器的制造方法
公开(公告)号：US5700702A
公开(公告)日：1997-12-23
申请号：US676282
申请日：1996-07-17
申请人： Helmut Klose , Markus Biebl , Thomas Scheiter , Christofer Hierold
发明人： Helmut Klose , Markus Biebl , Thomas Scheiter , Christofer Hierold
IPC分类号： G01P15/08 , G01P15/125 , H01L29/84 , H01L21/265
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0828 , Y10S148/159
摘要： Manufacturing method for an acceleration sensor on silicon, whereby, following the manufacture of the doped regions required for the electronic function elements, a polysilicon layer is deposited. The polysilicon layer is structured such that a portion of this polysilicon layer forms an electrode (for example, the emitter electrode (9) and the collector electrode (10) of a transistor) and a sensor layer (17) provided as sensor element.
摘要翻译： PCT No.PCT / DE95 / 00022 Sec。 371日期：1996年7月17日 102（e）日期1996年7月17日PCT 1995年1月10日PCT PCT。第WO95 / 19572号公报日期1995年7月20日硅上的加速度传感器的制造方法，其中，在制造电子功能元件所需的掺杂区域之后，沉积多晶硅层。多晶硅层被构造为使得该多晶硅层的一部分形成电极（例如，发射极（9）和晶体管的集电极（10））和设置为传感器元件的传感器层（17）。

9. 发明授权

US5553506A Force sensor and a method for manufacturing a force sensor 失效
标题翻译：力传感器和制造力传感器的方法
公开(公告)号：US5553506A
公开(公告)日：1996-09-10
申请号：US303099
申请日：1994-09-08
申请人： Gerhard Benz , Franz Laermer , Andrea Schilp , Erich Zabler , Jurgen Schirmer , Werner Uhler
发明人： Gerhard Benz , Franz Laermer , Andrea Schilp , Erich Zabler , Jurgen Schirmer , Werner Uhler
IPC分类号： G01L1/10 , G01L9/00 , G01P15/08 , G01P15/097 , G01P15/10 , H01L29/84 , G01L1/00
CPC分类号： G01P15/097 , G01L9/0019 , G01L9/0042 , G01P15/0802 , Y10S148/159
摘要： In a force sensor, a resonator is mounted by means of a dielectric layer on a bending element. Deformation of the bending element changes the resonant frequency of the resonator.
摘要翻译：在力传感器中，通过介电层将谐振器安装在弯曲元件上。弯曲元件的变形会改变谐振器的谐振频率。

10. 发明授权

US5110373A Silicon membrane with controlled stress 失效
标题翻译：具有受控应力的硅膜
公开(公告)号：US5110373A
公开(公告)日：1992-05-05
申请号：US565253
申请日：1990-08-09
申请人： Philip E. Mauger
发明人： Philip E. Mauger
IPC分类号： C23C14/00 , C25F3/12 , H01L21/3063
CPC分类号： B81C1/00666 , C23C14/0005 , C25F3/12 , H01L21/3063 , B81B2203/0127 , B81C2201/0164 , Y10S148/159 , Y10S438/938 , Y10S438/977
摘要： A method for fabricating a silicon membrane with predetermined stress characteristics. A silicon substrate is doped to create a doped layer as thick as the desired thickness of the membrane. Stress within the doped layer is controlled by selecting the dopant based on its atomic diameter relative to silicon and controlling both the total concentration and concentration profile of the dopant. The membrane is then formed by electrochemically etching away the substrate beneath the doped layer.
摘要翻译：一种制备具有预定应力特性的硅膜的方法。掺杂硅衬底以产生如期望的膜厚度那样厚的掺杂层。通过基于其相对于硅的原子直径选择掺杂剂并控制掺杂剂的总浓度和浓度分布来控制掺杂层内的应力。然后通过电化学蚀刻掉掺杂层下面的衬底形成膜。

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