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1. 发明授权

US06935466B2 Lift pin alignment and operation methods and apparatus 失效
标题翻译：提升针对准和操作方法和装置
公开(公告)号：US06935466B2
公开(公告)日：2005-08-30
申请号：US09797459
申请日：2001-03-01
申请人： Dmitry Lubomirsky , Sheshraj Tulshibagwale , Donald Olgado , Avi Tepman
发明人： Dmitry Lubomirsky , Sheshraj Tulshibagwale , Donald Olgado , Avi Tepman
IPC分类号： H01L21/683 , H01L21/687 , H01L21/00
CPC分类号： H01L21/68742 , Y10S414/135
摘要： A lifting mechanism includes a plurality of lift pins which may be driven separately and independently upward to engage an alignment surface of the chamber using ambient atmospheric pressure as the chamber is evacuated by a pump. In the illustrated embodiment, each lift pin includes a piston which is exposed to the internal chamber pressure on one side of the piston, and is exposed to the external ambient pressure on the other side of the piston. As the pump evacuates the chamber, the internal chamber pressure decreases, causing each lift pin piston to drive the associated lift pin upward. Once all the lift pins have securely engaged the alignment surface, the lift pins may be clamped to a linking mechanism to permit a motor to actuate the lift pins during processing operations.
摘要翻译：提升机构包括多个提升销，所述提升销可以单独驱动并且独立地向上驱动，以便当所述室被泵排空时，使用环境大气压与室的对准表面接合。在所示的实施例中，每个提升销包括活塞，该活塞暴露于活塞的一侧上的内部室压力，并且暴露于活塞另一侧的外部环境压力。当泵排空室时，内部室压力降低，导致每个升降销活塞向上驱动相关联的升降销。一旦所有升降销牢固地接合到对准表面上，升降销可以被夹紧到连接机构，以允许马达在加工操作期间致动提升销。

2. 发明申请

US20050217586A1 Lift pin alignment and operation methods and apparatus 审中-公开
公开(公告)号：US20050217586A1
公开(公告)日：2005-10-06
申请号：US11146687
申请日：2005-06-06
申请人： Dmitry Lubomirsky , Sheshraj Tulshibagwale , Donald Olgado , Avi Tepman
发明人： Dmitry Lubomirsky , Sheshraj Tulshibagwale , Donald Olgado , Avi Tepman
IPC分类号： H01L21/683 , H01L21/687 , C23C16/00
CPC分类号： H01L21/68742 , Y10S414/135
摘要： A lifting mechanism includes a plurality of lift pins which may be driven separately and independently upward to engage an alignment surface of the chamber using ambient atmospheric pressure as the chamber is evacuated by a pump. In the illustrated embodiment, each lift pin includes a piston which is exposed to the internal chamber pressure on one side of the piston, and is exposed to the external ambient pressure on the other side of the piston. As the pump evacuates the chamber, the internal chamber pressure decreases, causing each lift pin piston to drive the associated lift pin upward. Once all the lift pins have securely engaged the alignment surface, the lift pins may be clamped to a linking mechanism to permit a motor to actuate the lift pins during processing operations.

3. 发明授权

US06770565B2 System for planarizing metal conductive layers 失效
标题翻译：用于平坦化金属导电层的系统
公开(公告)号：US06770565B2
公开(公告)日：2004-08-03
申请号：US10043561
申请日：2002-01-08
申请人： Donald J. K. Olgado , Avi Tepman , Dmitry Lubomirsky , Timothy R. Webb
发明人： Donald J. K. Olgado , Avi Tepman , Dmitry Lubomirsky , Timothy R. Webb
IPC分类号： H01L2302
CPC分类号： H01L21/6708 , C23F1/18 , H01L21/32115 , H01L21/32134 , H01L21/32136 , H01L21/7684
摘要： A method of planarizing a metal conductive layer on a substrate is provided. In one embodiment, a substrate having a metal conductive layer disposed on a top surface of the substrate is provided on a substrate support. The substrate support is rotated and the top surface of the substrate is contacted with a liquid etching composition. The metal conductive layer is then exposed to an etchant gas in order to planarize the top surface of the metal conductive layer. Also provided is an apparatus for etching a metal conductive layer on a substrate. The apparatus comprises a container, a substrate support disposed in the container, a rotation actuator attached to the substrate support, and a fluid delivery assembly disposed in the container.
摘要翻译：提供了在基板上平面化金属导电层的方法。在一个实施例中，在衬底支架上设置具有设置在衬底顶表面上的金属导电层的衬底。衬底支撑件旋转并且衬底的顶表面与液体蚀刻组合物接触。然后将金属导电层暴露于蚀刻剂气体，以平坦化金属导电层的顶表面。还提供了一种用于在基板上蚀刻金属导电层的装置。该装置包括容器，设置在容器中的基板支撑件，附接到基板支撑件的旋转致动器以及设置在容器中的流体输送组件。

4. 发明授权

US6071372A RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls 失效
标题翻译： RF等离子体蚀刻反应器，具有内部感应线圈天线和导电室壁
公开(公告)号：US6071372A
公开(公告)日：2000-06-06
申请号：US869798
申请日：1997-06-05
申请人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Yin , Peter Loewenhardt , Jeng H. Hwang , Steve Mak
发明人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Yin , Peter Loewenhardt , Jeng H. Hwang , Steve Mak
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , C23F1/02 , C23C16/00
CPC分类号： H01J37/32477 , H01J37/321
摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.
摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。保护层防止在室内形成的等离子体从室壁溅射材料。蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。线圈天线可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

5. 发明授权

US5883017A Compartmentalized substrate processing chamber 失效
标题翻译：隔板基板处理室
公开(公告)号：US5883017A
公开(公告)日：1999-03-16
申请号：US916161
申请日：1997-09-02
申请人： Avi Tepman , Gerald Zheyao Yin , Donald Olgado
发明人： Avi Tepman , Gerald Zheyao Yin , Donald Olgado
IPC分类号： H01L21/302 , B65G49/07 , H01L21/00 , H01L21/02 , H01L21/20 , H01L21/306 , H01L21/677
CPC分类号： H01L21/67748 , H01L21/6719 , H01L21/67196 , H01L21/67751 , Y10S414/135 , Y10S414/139 , Y10S438/905 , Y10S438/907 , Y10S438/908
摘要： A process chamber for semiconductor wafers is formed of multiple compartments. A first compartment is provided for supplying an isolated environment for processing the wafers, and a second compartment is provided, in selective communication with the first compartment, to load and unload wafers from the chamber. The wafer handling equipment is located in the second compartment to isolate it from the process environment, and thus form a clean, non-contaminating, environment for the wafer handling equipment. When the chamber must be cleaned, only the first compartment must be cleaned, as no processing occurs in the second chamber. Therefore, the entire first chamber may be removed for cleaning, and replaced with a clean first compartment to decrease chamber turnaround time during chamber cleaning operations.
摘要翻译：用于半导体晶片的处理室由多个隔室形成。提供第一隔室以提供用于处理晶片的隔离环境，并且提供与第一隔室选择性连通的第二隔室，用于从腔室加载和卸载晶片。晶片处理设备位于第二隔室中以将其与工艺环境隔离，并因此形成用于晶片处理设备的干净，无污染的环境。当房间必须清洁时，只有第一个隔间必须被清洁，因为在第二个室中没有处理。因此，可以将整个第一腔室移除以进行清洁，并且用清洁的第一隔室替换以减少室清洁操作期间的室周转时间。

6. 发明授权

US5730801A Compartnetalized substrate processing chamber 失效
标题翻译：基板处理室
公开(公告)号：US5730801A
公开(公告)日：1998-03-24
申请号：US296043
申请日：1994-08-23
申请人： Avi Tepman , Gerald Zheyao Yin , Donald Olgado
发明人： Avi Tepman , Gerald Zheyao Yin , Donald Olgado
IPC分类号： H01L21/302 , B65G49/07 , H01L21/00 , H01L21/02 , H01L21/20 , H01L21/306 , H01L21/677 , C23C16/00
CPC分类号： H01L21/67748 , H01L21/6719 , H01L21/67196 , H01L21/67751 , Y10S414/135 , Y10S414/139 , Y10S438/905 , Y10S438/907 , Y10S438/908
摘要： A process chamber for semiconductor wafers is formed of multiple compartments. A first compartment is provided for supplying an isolated environment for processing the wafers, and a second compartment is provided, in selective communication with the first compartment, to load and unload wafers from the chamber. The wafer handling equipment is located in the second compartment to isolate it from the process environment, and thus form a clean, non-contaminating, environment for the wafer handling equipment. When the chamber must be cleaned, only the first compartment must be cleaned, as no processing occurs in the second chamber. Therefore, the entire first chamber may be removed for cleaning, and replaced with a clean first compartment to decrease chamber turnaround time during chamber cleaning operations.
摘要翻译：用于半导体晶片的处理室由多个隔室形成。提供第一隔室以提供用于处理晶片的隔离环境，并且提供与第一隔室选择性连通的第二隔室，用于从腔室加载和卸载晶片。晶片处理设备位于第二隔室中以将其与工艺环境隔离，并因此形成用于晶片处理设备的干净，无污染的环境。当房间必须清洁时，只有第一个隔间必须被清洁，因为在第二个室中没有处理。因此，可以将整个第一腔室移除以进行清洁，并且用清洁的第一隔室替换以减少室清洁操作期间的室周转时间。

7. 发明授权

US5746875A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5746875A
公开(公告)日：1998-05-05
申请号：US551881
申请日：1995-10-16
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
IPC分类号： H05H1/46 , C23C16/44 , C23C16/455 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/42 , H05H1/00
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449
摘要： The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, a device for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas distribution apparatus disposed within the opening in the chamber housing which has at least one slotted aperture facing the interior of the chamber and a device for controlling the flow rate of gas from the one or more slotted apertures, and a gas feed line from the supply to the gas distribution apparatus. In a preferred embodiment, the gas distribution apparatus includes a center member surrounded by at least one annular member with a gap therebetween comprising the slotted aperture. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of a ceramic, fused quartz, polymeric or anodized aluminum material and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
摘要翻译：本发明体现在一种用于将气体注入等离子体反应器真空室中的气体注入装置，其具有腔室壳体，保持要加工的工件的基座，用于将RF能量施加到腔室中的装置，该气体注入装置具有气体供应在气体中含有蚀刻剂物质，在腔室中的开口，设置在腔室中的开口内的气体分配装置，其具有面向腔室内部的至少一个开口孔，以及用于控制气体流速的装置从一个或多个开槽孔，以及从供给到气体分配装置的气体供给管线。在优选实施例中，气体分配装置包括由至少一个环形构件包围的中心构件，其间具有间隙，包括开槽孔。优选地，气体分配装置的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。在一个示例中，气体分配装置的每个构件包括陶瓷，熔融石英，聚合物或阳极氧化铝材料中的一种，气体供给管线包括不锈钢。优选地，每个构件在气体分配装置的组装之前具有其表面抛光。

8. 发明申请

US20060246690A1 Electro-chemical deposition system 失效
公开(公告)号：US20060246690A1
公开(公告)日：2006-11-02
申请号：US11476945
申请日：2006-06-27
申请人： Yezdi Dordi , Donald Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Anna Lloyd , Joseph Stevens , Dan Marohl , Ho Shin , Eugene Ravinovich , Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Anna Lloyd , Joseph Stevens , Dan Marohl , Ho Shin , Eugene Ravinovich , Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： H01L21/20 , B05D3/00 , B05C13/00 , B05C13/02
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

9. 发明授权

US06270687B1 RF plasma method 失效
标题翻译：射频等离子体法
公开(公告)号：US06270687B1
公开(公告)日：2001-08-07
申请号：US09564042
申请日：2000-04-27
申请人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Zheyao Yin , Peter Loewenhardt , Jeng Hwang , Steve S. Y. Mak
发明人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Zheyao Yin , Peter Loewenhardt , Jeng Hwang , Steve S. Y. Mak
IPC分类号： B44C122
CPC分类号： H01J37/32477 , H01J37/321
摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.
摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。保护层防止在室内形成的等离子体从室壁溅射材料。蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。线圈天线可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

10. 发明授权

US5885358A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5885358A
公开(公告)日：1999-03-23
申请号：US682803
申请日：1996-07-09
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
IPC分类号： C23C16/44 , C23C16/455 , C23C16/50 , H01J37/32 , H01L21/02 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/321 , C23C16/455 , H01J37/3244
摘要： A gas injection system for injecting gases into a plasma reactor having a vacuum chamber with a sidewall, a pedestal for holding a semiconductor wafer to be processed, and a RF power applicator for applying RF power into the chamber. The gas injection system includes at least one gas supply containing gas, a gas distribution apparatus which has at least one slotted aperture facing the interior of the chamber, and one or more gas feed lines connecting the gas supply or supplies to the gas distribution apparatus. A preferred embodiment of a radial gas distribution apparatus in accordance with the present invention is disposed in the chamber sidewall and includes plural gas distribution nozzles each with a slotted aperture facing an interior of the chamber. Gas feed lines are employed to respectively connect each gas distribution nozzle to separate ones of the gas supplies.
摘要翻译：一种用于将气体注入等离子体反应器的气体注入系统，所述等离子体反应器具有具有侧壁的真空室，用于保持要处理的半导体晶片的基座和用于将RF功率施加到所述室中的RF功率施加器。气体注入系统包括至少一个含气体的气体供给装置，具有面向腔室内部的至少一个开口孔的气体分配装置以及将气体供给或供给部连接到气体分配装置的一个或多个气体供给管线。根据本发明的径向气体分配装置的优选实施例设置在室侧壁中，并且包括多个气体分配喷嘴，每个气体分配喷嘴均具有面向腔室内部的开口孔。采用气体供给管线分别连接每个气体分配喷嘴以分离气体供应源。

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