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    • 3. 发明授权
    • Method of depositing materials on a non-planar surface
    • 在非平面表面上沉积材料的方法
    • US07563725B2
    • 2009-07-21
    • US11801469
    • 2007-05-09
    • Ratson Morad
    • Ratson Morad
    • H01L21/31
    • C30B23/02H01L21/02568H01L21/02631H01L21/67754H01L21/6776
    • A method of depositing materials on a non-planar surface is disclosed. The method is effectuated by rotating non-planar substrates as they travel down a translational path of a processing chamber. As the non-planar substrates simultaneously rotate and translate down a processing chamber, the rotation exposes the whole or any desired portion of the surface area of the non-planar substrates to the deposition process, allowing for uniform deposition as desired. Alternatively, any predetermined pattern is able to be exposed on the surface of the non-planar substrates. Such a method effectuates manufacture of non-planar semiconductor devices, including, but not limited to, non-planar light emitting diodes, non-planar photovoltaic cells, and the like.
    • 公开了一种在非平面表面上沉积材料的方法。 该方法通过旋转非平面基板沿着处理室的平移路径向下移动来实现。 随着非平面基板同时旋转并且向下平移处理室,旋转将非平面基板的表面积的整个或任何所需部分暴露于沉积工艺,从而允许根据需要均匀沉积。 或者,任何预定图案能够暴露在非平面基板的表面上。 这种方法实现了非平面半导体器件的制造,包括但不限于非平面发光二极管,非平面光伏电池等。
    • 8. 发明授权
    • Method and apparatus for heating and cooling substrates
    • 用于加热和冷却基材的方法和装置
    • US06276072B1
    • 2001-08-21
    • US09396007
    • 1999-09-15
    • Ratson MoradHo Seon ShinRobin CheungIgor Kogan
    • Ratson MoradHo Seon ShinRobin CheungIgor Kogan
    • F26B700
    • H01L21/67109H01L21/67115H01L21/67748
    • A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism. The heating mechanism preferably comprises a heated substrate support adapted to support a substrate and to heat the supported substrate to a predetermined temperature, and the cooling mechanism preferably comprises a cooling plate. The transfer mechanism may comprise, for example, a wafer lift hoop having a plurality of fingers adapted to support a substrate, or a plurality of wafer lift pins. A dry gas source may be coupled to the chamber and adapted to supply a dry gas thereto. The chamber preferably includes a pump adapted to evacuate the chamber to a predetermined pressure during at least cooling. A method for heating and cooling a substrate also is provided.
    • 提供了一种用于加热和冷却衬底的方法和装置。 提供了一种室,其包括适于加热位于加热机构附近的基板的加热机构,与加热机构间隔开并适于冷却位于冷却机构附近的基板的冷却机构,以及适于将基板 靠近加热机构的位置和靠近冷却机构的位置。 加热机构优选地包括适于支撑基板并将受支撑基板加热到预定温度的加热基板支撑件,并且冷却机构优选地包括冷却板。 转移机构可以包括例如具有适于支撑衬底的多个指状物的晶片提升环或多个晶片提升销。 干燥气源可以连接到室并适于向其供应干燥气体。 腔室优选地包括适于在至少冷却期间将腔室排空到预定压力的泵。 还提供了一种用于加热和冷却基板的方法。