专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5746875A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5746875A
公开(公告)日：1998-05-05
申请号：US551881
申请日：1995-10-16
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
IPC分类号： H05H1/46 , C23C16/44 , C23C16/455 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/42 , H05H1/00
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449
摘要： The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, a device for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas distribution apparatus disposed within the opening in the chamber housing which has at least one slotted aperture facing the interior of the chamber and a device for controlling the flow rate of gas from the one or more slotted apertures, and a gas feed line from the supply to the gas distribution apparatus. In a preferred embodiment, the gas distribution apparatus includes a center member surrounded by at least one annular member with a gap therebetween comprising the slotted aperture. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of a ceramic, fused quartz, polymeric or anodized aluminum material and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
摘要翻译：本发明体现在一种用于将气体注入等离子体反应器真空室中的气体注入装置，其具有腔室壳体，保持要加工的工件的基座，用于将RF能量施加到腔室中的装置，该气体注入装置具有气体供应在气体中含有蚀刻剂物质，在腔室中的开口，设置在腔室中的开口内的气体分配装置，其具有面向腔室内部的至少一个开口孔，以及用于控制气体流速的装置从一个或多个开槽孔，以及从供给到气体分配装置的气体供给管线。在优选实施例中，气体分配装置包括由至少一个环形构件包围的中心构件，其间具有间隙，包括开槽孔。优选地，气体分配装置的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。在一个示例中，气体分配装置的每个构件包括陶瓷，熔融石英，聚合物或阳极氧化铝材料中的一种，气体供给管线包括不锈钢。优选地，每个构件在气体分配装置的组装之前具有其表面抛光。

2. 发明授权

US5885358A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5885358A
公开(公告)日：1999-03-23
申请号：US682803
申请日：1996-07-09
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
IPC分类号： C23C16/44 , C23C16/455 , C23C16/50 , H01J37/32 , H01L21/02 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/321 , C23C16/455 , H01J37/3244
摘要： A gas injection system for injecting gases into a plasma reactor having a vacuum chamber with a sidewall, a pedestal for holding a semiconductor wafer to be processed, and a RF power applicator for applying RF power into the chamber. The gas injection system includes at least one gas supply containing gas, a gas distribution apparatus which has at least one slotted aperture facing the interior of the chamber, and one or more gas feed lines connecting the gas supply or supplies to the gas distribution apparatus. A preferred embodiment of a radial gas distribution apparatus in accordance with the present invention is disposed in the chamber sidewall and includes plural gas distribution nozzles each with a slotted aperture facing an interior of the chamber. Gas feed lines are employed to respectively connect each gas distribution nozzle to separate ones of the gas supplies.
摘要翻译：一种用于将气体注入等离子体反应器的气体注入系统，所述等离子体反应器具有具有侧壁的真空室，用于保持要处理的半导体晶片的基座和用于将RF功率施加到所述室中的RF功率施加器。气体注入系统包括至少一个含气体的气体供给装置，具有面向腔室内部的至少一个开口孔的气体分配装置以及将气体供给或供给部连接到气体分配装置的一个或多个气体供给管线。根据本发明的径向气体分配装置的优选实施例设置在室侧壁中，并且包括多个气体分配喷嘴，每个气体分配喷嘴均具有面向腔室内部的开口孔。采用气体供给管线分别连接每个气体分配喷嘴以分离气体供应源。

3. 发明授权

US5643394A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5643394A
公开(公告)日：1997-07-01
申请号：US307888
申请日：1994-09-16
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , Brian Shieh , James S. Papanu
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , Brian Shieh , James S. Papanu
IPC分类号： H05H1/46 , C23C16/44 , C23C16/455 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/00
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449
摘要： The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, means for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas feed line from the supply to the opening in the chamber housing, and gas distribution apparatus near the opening in the chamber housing, the gas feed apparatus having at least one slit nozzle facing the interior of the chamber. In a preferred embodiment, the gas distribution apparatus includes a disk member surrounded by at least one annular member with a gap therebetween comprising the slit nozzle, the disk member and annular member blocking gas flow through the opening in the chamber housing. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of ceramic, quartz, sapphire, polyimide or anodized aluminum and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
摘要翻译：本发明体现在一种用于将气体注入等离子体反应器真空室的气体注入装置，其具有腔室壳体，保持要加工的工件的基座，用于将RF能量施加到腔室中的装置，该气体注入装置具有含有气体中的蚀刻剂物质，腔室壳体中的开口，从供体到腔室中的开口的气体供给管线以及靠近腔室壳体中的开口的气体分配装置，气体供给装置具有至少一个狭缝喷嘴面向腔室的内部。在优选实施例中，气体分配装置包括由至少一个环形构件包围的盘构件，其间具有间隙，包括狭缝喷嘴，盘构件和环形构件阻挡气体流过腔室中的开口。优选地，气体分配装置的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。在一个示例中，气体分配装置的每个构件包括陶瓷，石英，蓝宝石，聚酰亚胺或阳极氧化铝之一，气体供给管线包括不锈钢。优选地，每个构件在气体分配装置的组装之前具有其表面抛光。

4. 发明授权

US5897712A Plasma uniformity control for an inductive plasma source 失效
标题翻译：感应等离子体源的等离子体均匀性控制
公开(公告)号：US5897712A
公开(公告)日：1999-04-27
申请号：US683053
申请日：1996-07-16
申请人： Hiroji Hanawa , Peter K Loewenhardt , Timothy D. Driscoll , Gerald Zheyao Yin
发明人： Hiroji Hanawa , Peter K Loewenhardt , Timothy D. Driscoll , Gerald Zheyao Yin
IPC分类号： H05H1/46 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/00
CPC分类号： H01J37/321
摘要： The present invention reduces those portions of the RF induction field over areas of the wafer experiencing higher etch or deposition rates than those experienced elsewhere on the wafer. Such a controlled reduction of those portions of the RF induction field whose attenuation results in reducing non-uniformity in the etch or deposition rate distribution is obtained by incorporating a plasma uniformity control apparatus into the inductively coupled plasma reactor. The incorporated plasma uniformity control apparatus for controlling the RF induction field produced by the antenna includes one or more conductive bodies which are disposed adjacent to one or more of the radiating elements of the antenna.
摘要翻译：本发明在晶片的区域上减少RF感应场的那些部分，其经历比在晶片上其他地方经历的蚀刻或沉积速率更高的蚀刻或沉积速率。通过将等离子体均匀性控制装置并入到电感耦合等离子体反应器中，可以获得衰减导致减小蚀刻或沉积速率分布不均匀性的RF感应场的那些部分的这种受控减少。用于控制由天线产生的RF感应场的合并等离子体均匀性控制装置包括与天线的一个或多个辐射元件相邻设置的一个或多个导电体。

5. 发明授权

US5328312A Dual load-path fastener 失效
标题翻译：双重装载轨道紧固件
公开(公告)号：US5328312A
公开(公告)日：1994-07-12
申请号：US994790
申请日：1992-12-22
申请人： Timothy D. Driscoll
发明人： Timothy D. Driscoll
IPC分类号： B64G1/64 , F16B9/02 , F16B35/00
CPC分类号： F16B9/026 , B64G1/641 , Y10T403/16 , Y10T403/75
摘要： A fastener system is provided for securing a component to supporting structure. The fastener system comprises a pair of cooperating fastener modules. The first module includes a first stationary member attached to the supporting structure and a first bolt member threadedly engaged with the first stationary member. The second module includes a second stationary member also attached to the supporting structure and a second bolt member threadedly engaged with the second stationary member. The second bolt member also extends freely through a longitudinal bore in the first bolt member. Head members on the first and second head members are mutually engaged for their unitary rotation and the first head member engages the component. When the head members are rotated in one direction, they are advanced toward the supporting structure thereby drawing the component toward the supporting structure. Rotation in the opposite direction is effective to cause the head members to retract from the supporting structure and thereby separate the component from the supporting structure. With this construction, upon fracture either of the first fastener means at a location away from the first head member or of the second fastener means at a location away from the second head member, upon rotation of the first head member in the one direction, the first head member nevertheless continues to advance toward the supporting structure.
摘要翻译：提供一种用于将部件固定到支撑结构上的紧固件系统。紧固件系统包括一对协作紧固件模块。第一模块包括附接到支撑结构的第一固定构件和与第一固定构件螺纹接合的第一螺栓构件。第二模块包括还附接到支撑结构的第二固定构件和与第二固定构件螺纹接合的第二螺栓构件。第二螺栓构件还通过第一螺栓构件中的纵向孔自由延伸。第一和第二头部构件上的头部构件相互接合以使其一体旋转，并且第一头部构件接合构件。当头部构件沿一个方向旋转时，它们朝向支撑结构前进，从而将构件拉向支撑结构。相反方向的旋转有效地使头部构件从支撑结构缩回，从而将构件与支撑结构分离。利用这种结构，当在第一头部构件沿一个方向旋转时，在第一紧固装置中的任何一个在离开第一头部构件或第二紧固件装置的位置处远离第二头部构件的位置断裂时，第一名总会员继续前进到支持结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式