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    • 5. 发明申请
    • Polishing solution retainer
    • 抛光液固定器
    • US20060019581A1
    • 2006-01-26
    • US10942600
    • 2004-09-16
    • Hanzhong ZhangFeng LiuStan TsaiRashid MavlievDonald OlgadoLiang-Yuh Chen
    • Hanzhong ZhangFeng LiuStan TsaiRashid MavlievDonald OlgadoLiang-Yuh Chen
    • B24B1/00
    • B24B37/04B24B57/02
    • A substrate polishing apparatus and method are described. A base includes at least one movable platen to engage a polishing pad. At least one carrier head assembly presses a substrate against the polishing pad substantially within a polishing area during a polishing operation. A polishing solution dispenser applies a polishing solution to the polishing pad substantially within the polishing area during the polishing operation. A polishing solution retaining mechanism is attached to one of the base or the carrier head assembly. The retaining mechanism engages a top surface of the polishing pad and retains the polishing solution substantially within the polishing area during the polishing operation. Some implementations may reduce polishing solution consumption and allow for increased angular velocity.
    • 对基板研磨装置和方法进行说明。 基座包括至少一个可移动的压板以接合抛光垫。 在抛光操作期间,至少一个承载头组件基本上在抛光区域内将衬底压靠在抛光垫上。 抛光溶液分配器在抛光操作期间基本上在抛光区域内将抛光溶液施加到抛光垫。 抛光溶液保持机构附接到基座或承载头组件中的一个。 保持机构接合抛光垫的顶表面,并且在抛光操作期间将抛光液基本保持在抛光区域内。 一些实施方案可以减少抛光溶液消耗并允许增加的角速度。
    • 7. 发明授权
    • RF plasma reactor with cleaning electrode for cleaning during processing
of semiconductor wafers
    • RF等离子体反应器,其具有用于在半导体晶片的处理期间进行清洁的清洁电极
    • US5817534A
    • 1998-10-06
    • US567376
    • 1995-12-04
    • Yan YeHiroji HanawaDiana Xiaobing MaGerald Zheyao YinPeter LoewenhardtDonald OlgadoJames PapanuSteven S.Y. Mak
    • Yan YeHiroji HanawaDiana Xiaobing MaGerald Zheyao YinPeter LoewenhardtDonald OlgadoJames PapanuSteven S.Y. Mak
    • H05H1/46H01J37/32H01L21/00H01L21/302H01L21/304H01L21/3065H05H1/00
    • H01L21/67028H01J37/32862Y10S438/905
    • The invention is carried out in a plasma reactor for processing a semiconductor wafer, the plasma reactor having a chamber for containing a processing gas and having a conductor connected to an RF power source for coupling RF power into the reactor chamber to generate from the processing gas a plasma inside the chamber, the chamber containing at least one surface exposed toward the plasma and susceptible to contamination by particles produced during processing of the wafer, the invention being carried out by promoting, during processing of the wafer, bombarding of particles from the plasma onto the one surface to remove therefrom contaminants deposited during processing of the wafer. Such promoting of bombarding is carried out by providing an RF power supply and coupling, during processing of the wafer, RF power from the supply to the one surface. The coupling may be performed by a capacitive cleaning electrode adjacent the one surface, the capacitive cleaning electrode connected to the RF power supply. The capacitive cleaning electrode preferably is disposed on a side of the one surface opposite the plasma so as to be protected from contact with the plasma. Alternatively, the coupling may be carried out by a direct electrical connection from the RF power supply to the one surface.
    • 本发明在用于处理半导体晶片的等离子体反应器中进行,等离子体反应器具有用于容纳处理气体的室,并具有连接到RF电源的导体,用于将RF功率耦合到反应器室中以从处理气体产生 腔室内的等离子体,该腔室包含至少一个暴露于等离子体的表面并容易受到在晶片加工期间产生的颗粒的污染,本发明通过在晶片加工期间促进从等离子体中轰击颗粒而进行 在一个表面上去除在晶片加工期间沉积的污染物。 通过在晶片的处理期间提供RF电源和耦合来进行轰击的这种促进是从电源到单个表面的RF功率。 耦合可以通过与一个表面相邻的电容清洁电极,电容清洁电极连接到RF电源来进行。 电容式清洁电极优选地设置在与等离子体相对的一个表面的一侧,以便被保护而不与等离子体接触。 或者,耦合可以通过从RF电源到一个表面的直接电连接来执行。