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    • 1. 发明授权
    • Gas injection slit nozzle for a plasma process reactor
    • 用于等离子体处理反应器的气体注入狭缝喷嘴
    • US5746875A
    • 1998-05-05
    • US551881
    • 1995-10-16
    • Dan MaydanSteve S. Y. MakDonald OlgadoGerald Zheyao YinTimothy D. DriscollJames S. PapanuAvi Tepman
    • Dan MaydanSteve S. Y. MakDonald OlgadoGerald Zheyao YinTimothy D. DriscollJames S. PapanuAvi Tepman
    • H05H1/46C23C16/44C23C16/455C23F4/00H01J37/32H01L21/302H01L21/3065H05H1/42H05H1/00
    • C23C16/45574C23C16/45576C23C16/45587H01J37/3244H01J37/32449
    • The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, a device for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas distribution apparatus disposed within the opening in the chamber housing which has at least one slotted aperture facing the interior of the chamber and a device for controlling the flow rate of gas from the one or more slotted apertures, and a gas feed line from the supply to the gas distribution apparatus. In a preferred embodiment, the gas distribution apparatus includes a center member surrounded by at least one annular member with a gap therebetween comprising the slotted aperture. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of a ceramic, fused quartz, polymeric or anodized aluminum material and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
    • 本发明体现在一种用于将气体注入等离子体反应器真空室中的气体注入装置,其具有腔室壳体,保持要加工的工件的基座,用于将RF能量施加到腔室中的装置,该气体注入装置具有气体供应 在气体中含有蚀刻剂物质,在腔室中的开口,设置在腔室中的开口内的气体分配装置,其具有面向腔室内部的至少一个开口孔,以及用于控制气体流速的装置 从一个或多个开槽孔,以及从供给到气体分配装置的气体供给管线。 在优选实施例中,气体分配装置包括由至少一个环形构件包围的中心构件,其间具有间隙,包括开槽孔。 优选地,气体分配装置的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。 在一个示例中,气体分配装置的每个构件包括陶瓷,熔融石英,聚合物或阳极氧化铝材料中的一种,气体供给管线包括不锈钢。 优选地,每个构件在气体分配装置的组装之前具有其表面抛光。
    • 4. 发明授权
    • RF plasma method
    • 射频等离子体法
    • US06270687B1
    • 2001-08-07
    • US09564042
    • 2000-04-27
    • Yan YeDonald OlgadoAvi TepmanDiana MaGerald Zheyao YinPeter LoewenhardtJeng HwangSteve S. Y. Mak
    • Yan YeDonald OlgadoAvi TepmanDiana MaGerald Zheyao YinPeter LoewenhardtJeng HwangSteve S. Y. Mak
    • B44C122
    • H01J37/32477H01J37/321
    • An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.
    • RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。 保护层防止在室内形成的等离子体从室壁溅射材料。 蚀刻反应器还具有设置在蚀刻室内的感应线圈天线,其用于通过感应耦合产生等离子体。 类似于室壁,感应线圈天线被构造成防止由等离子体溅射构成天线的材料。 线圈天线​​可以承受在室内实现期望的功率沉积图案所必需的任何配置(例如位置,形状,取向)。 用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。 分段结构涉及使用至少两个线圈段,其中每个段与其它段电隔离并连接到单独的RF功率信号。 单线圈天线或每个线圈段可以具有平面形状,圆柱形,截顶圆锥形,圆顶形或其任何组合。 导电壁电接地以用作工件支撑基座的电接地(即阳极),工件支撑基座连接到RF功率源,以在工件的表面产生偏置电压。
    • 6. 发明授权
    • RF plasma etch reactor with internal inductive coil antenna and
electrically conductive chamber walls
    • RF等离子体蚀刻反应器,具有内部感应线圈天线和导电室壁
    • US6071372A
    • 2000-06-06
    • US869798
    • 1997-06-05
    • Yan YeDonald OlgadoAvi TepmanDiana MaGerald YinPeter LoewenhardtJeng H. HwangSteve Mak
    • Yan YeDonald OlgadoAvi TepmanDiana MaGerald YinPeter LoewenhardtJeng H. HwangSteve Mak
    • H05H1/46H01J37/32H01L21/302C23F1/02C23C16/00
    • H01J37/32477H01J37/321
    • An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.
    • RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。 保护层防止在室内形成的等离子体从室壁溅射材料。 蚀刻反应器还具有设置在蚀刻室内的感应线圈天线,其用于通过感应耦合产生等离子体。 类似于室壁,感应线圈天线被构造成防止由等离子体溅射构成天线的材料。 线圈天线​​可以承受在室内实现期望的功率沉积图案所必需的任何配置(例如位置,形状,取向)。 用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。 分段结构涉及使用至少两个线圈段,其中每个段与其它段电隔离并连接到单独的RF功率信号。 单线圈天线或每个线圈段可以具有平面形状,圆柱形,截顶圆锥形,圆顶形或其任何组合。 导电壁电接地以用作工件支撑基座的电接地(即阳极),工件支撑基座连接到RF功率源,以在工件的表面产生偏置电压。
    • 7. 发明授权
    • Lift pin alignment and operation methods and apparatus
    • 提升针对准和操作方法和装置
    • US06935466B2
    • 2005-08-30
    • US09797459
    • 2001-03-01
    • Dmitry LubomirskySheshraj TulshibagwaleDonald OlgadoAvi Tepman
    • Dmitry LubomirskySheshraj TulshibagwaleDonald OlgadoAvi Tepman
    • H01L21/683H01L21/687H01L21/00
    • H01L21/68742Y10S414/135
    • A lifting mechanism includes a plurality of lift pins which may be driven separately and independently upward to engage an alignment surface of the chamber using ambient atmospheric pressure as the chamber is evacuated by a pump. In the illustrated embodiment, each lift pin includes a piston which is exposed to the internal chamber pressure on one side of the piston, and is exposed to the external ambient pressure on the other side of the piston. As the pump evacuates the chamber, the internal chamber pressure decreases, causing each lift pin piston to drive the associated lift pin upward. Once all the lift pins have securely engaged the alignment surface, the lift pins may be clamped to a linking mechanism to permit a motor to actuate the lift pins during processing operations.
    • 提升机构包括多个提升销,所述提升销可以单独驱动并且独立地向上驱动,以便当所述室被泵排空时,使用环境大气压与室的对准表面接合。 在所示的实施例中,每个提升销包括活塞,该活塞暴露于活塞的一侧上的内部室压力,并且暴露于活塞另一侧的外部环境压力。 当泵排空室时,内部室压力降低,导致每个升降销活塞向上驱动相关联的升降销。 一旦所有升降销牢固地接合到对准表面上,升降销可以被夹紧到连接机构,以允许马达在加工操作期间致动提升销。