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1. 发明申请

US20080292433A1 BATCH EQUIPMENT ROBOTS AND METHODS OF ARRAY TO ARRAY WORK-PIECE TRANSFER FOR PHOTOVOLTAIC FACTORY 审中-公开
标题翻译：批量设备机器人和方法阵列工程转让光伏工厂
公开(公告)号：US20080292433A1
公开(公告)日：2008-11-27
申请号：US11747391
申请日：2007-05-11
申请人： Robert Z. Bachrach , Avi Tepman , Alexander S. Polyak
发明人： Robert Z. Bachrach , Avi Tepman , Alexander S. Polyak
IPC分类号： B65H5/00
CPC分类号： C23C16/54 , C23C14/568 , H01L31/18
摘要： The present invention generally comprises equipment for an automated high volume batch work-piece manufacturing factory comprising work-piece handling and work-piece processing in a high productivity factory architecture capable of producing 1,000 or more work-piece an hour. The work-pieces may be presented to the equipment from a stacked supply to a parallel array. Additionally, the work-pieces may be transferred between manufacturing architectures by an array to array batch transfer. The work-pieces may be transferred within the manufacturing architecture in a parallel to parallel batch transfer operation. The robotic operations may be between robotic devices, between robotic devices and processing equipment, and within processing equipment.
摘要翻译：本发明通常包括用于自动化大批量批量工件制造工厂的设备，其包括能够每小时生产1,000个或更多个工件的高生产率工厂结构中的工件处理和工件加工。工件可以从堆叠的供应提供给设备到并行阵列。另外，工件可以通过阵列在制造架构之间转移到阵列批量传输。工件可以在并行批量传输操作的同时在制造架构内转移。机器人操作可以在机器人设备之间，机器人设备和处理设备之间以及处理设备内。

2. 发明申请

US20080210258A1 SCRUBBER BOX AND METHODS FOR USING THE SAME 有权
标题翻译： SCRUBBER BOX及其使用方法
公开(公告)号：US20080210258A1
公开(公告)日：2008-09-04
申请号：US12102846
申请日：2008-04-14
申请人： Joseph Yudovsky , Avi Tepman , Kenneth R. Reynolds , Younes Achkire , Dan A. Marohl , Steve G. Ghanayem , Alexander S. Polyak , Gary Ettinger , Haochuan Zhang , Hui Chen
发明人： Joseph Yudovsky , Avi Tepman , Kenneth R. Reynolds , Younes Achkire , Dan A. Marohl , Steve G. Ghanayem , Alexander S. Polyak , Gary Ettinger , Haochuan Zhang , Hui Chen
IPC分类号： B08B7/00 , A47L25/00
CPC分类号： H01L21/67046 , B08B1/04
摘要： A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes.
摘要翻译：提供了一种洗涤器箱，其包括适于接收用于清洁的基底的罐，支撑在罐外部并且适于耦合到设置在罐内的洗涤器刷的端部;马达，其安装到每个支撑件上并适于旋转洗涤器电刷，支架通过适于允许洗涤器刷子进入的球面轴承可枢转地安装的基座，经由曲柄和摇臂机构适应的基本上同时地使支撑件朝向或远离彼此枢转的电刷间隙致动器以便允许洗涤器刷子基本上同时实现或断开与基板的接触，以及适于将两个球形轴承朝向或远离彼此移动的脚趾致动器，以便调节洗涤器之间的束缚角度刷子

3. 发明申请

US20060006058A1 Staggered target tiles 有权
公开(公告)号：US20060006058A1
公开(公告)日：2006-01-12
申请号：US10888383
申请日：2004-07-09
申请人： Avi Tepman
发明人： Avi Tepman
IPC分类号： C23C14/32
CPC分类号： C23C14/3407
摘要： A sputtering target, particularly for sputter depositing a target material onto large rectangular panels, in which a plurality of target tiles are bonded to a backing plate in a two-dimensional non-rectangular array such that the tiles meet at interstices of no more than three tile, thus locking the tiles against excessive misalignment during bonding. The rectangular tiles may be arranged in staggered rows or in a herringbone or zig-zag pattern. Hexagonal and triangular tiles also provide many of the advantages of the invention.

4. 发明申请

US20050139160A1 Clamshell and small volume chamber with fixed substrate support 审中-公开
标题翻译：蛤壳式和小容积室具有固定衬底支撑
公开(公告)号：US20050139160A1
公开(公告)日：2005-06-30
申请号：US11059846
申请日：2005-02-16
申请人： Lawrence Lei , Alfred Mak , Gwo-Chuan Tzu , Avi Tepman , Ming Xi , Walter Glenn
发明人： Lawrence Lei , Alfred Mak , Gwo-Chuan Tzu , Avi Tepman , Ming Xi , Walter Glenn
IPC分类号： C23C16/44 , C23C16/455 , H01L21/00 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45521 , C23C16/45574 , H01L21/6719
摘要： Embodiments of the present invention generally relate to a small volume chamber with a substrate support. One embodiment of a processing chamber includes a first assembly having a substrate support, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the substrate support. The chamber may further include a gas distribution assembly disposed over the substrate support. The first assembly and the gas distribution assembly can be selectively positioned between an open position and a closed position.
摘要翻译：本发明的实施例通常涉及具有基板支撑件的小容积室。处理室的一个实施例包括具有衬底支撑件的第一组件，围绕衬底接收表面的周边设置的泵送环以及设置在衬底支撑件上方的气体分配组件。该腔室还可包括设置在衬底支撑件上方的气体分配组件。第一组件和气体分配组件可以选择性地定位在打开位置和关闭位置之间。

5. 发明授权

US06881310B2 Cooling system for magnetron sputtering apparatus 有权
标题翻译：磁控溅射装置冷却系统
公开(公告)号：US06881310B2
公开(公告)日：2005-04-19
申请号：US10655949
申请日：2003-09-05
申请人： Avi Tepman
发明人： Avi Tepman
IPC分类号： H01J37/34 , C23C14/35
CPC分类号： H01J37/3497 , H01J37/3405
摘要： Apparatus and method for cooling a magnetron sputtering apparatus. More particularly, a system including a stationary conduit, a hollow drive shaft rotatably coupled to the stationary conduit, and a magnetron coupled to the hollow drive shaft.
摘要翻译：用于冷却磁控管溅射装置的装置和方法。更具体地，包括固定导管，可旋转地联接到固定导管的中空驱动轴和耦合到中空驱动轴的磁控管的系统。

6. 发明授权

US06722834B1 Robot blade with dual offset wafer supports 失效
标题翻译：具有双偏移晶片支架的机器人刀片
公开(公告)号：US06722834B1
公开(公告)日：2004-04-20
申请号：US08946920
申请日：1997-10-08
申请人： Avi Tepman
发明人： Avi Tepman
IPC分类号： B44C122
CPC分类号： H01L21/68707 , H01L21/67742 , Y10S414/135
摘要： A robot blade and a method of using the robot blade for transferring objects, namely substrates, through a process system, the robot blade comprising an upper platform having a first object supporting surface and a lower platform having a second object supporting surface. The robot blade is mounted onto a moveable member, and the assembly facilitates substrate transfers, such as removal of a processed substrate and insertion of an unprocessed substrate within a processing chamber through a single entry of the robot blade into the processing chamber.
摘要翻译：一种机器人刀片和使用所述机器人刀片用于通过处理系统传送物体即基底的方法，所述机器人刀片包括具有第一物体支撑表面的上平台和具有第二物体支撑表面的下平台。机器人刀片安装在可移动构件上，并且组件便于衬底转移，例如移除经处理的衬底并且通过机器人刀片的单个进入到处理室中的未处理衬底在处理室内的插入。

7. 发明授权

US06603269B1 Resonant chamber applicator for remote plasma source 失效
标题翻译：用于远程等离子体源的谐振室施加器
公开(公告)号：US06603269B1
公开(公告)日：2003-08-05
申请号：US09593586
申请日：2000-06-13
申请人： Be Van Vo , Salvador P. Umotoy , Son N. Trinh , Lawrence Chung-Lai Lei , Sergio Edelstein , Avi Tepman , Chien-Teh Kao , Kenneth Tsai
发明人： Be Van Vo , Salvador P. Umotoy , Son N. Trinh , Lawrence Chung-Lai Lei , Sergio Edelstein , Avi Tepman , Chien-Teh Kao , Kenneth Tsai
IPC分类号： C23C1600
CPC分类号： H01J37/32192
摘要： An improved plasma applicator for remotely generating a plasma for use in semiconductor manufacturing is provided. In one embodiment, a plasma applicator is comprised of a chamber assembly, a removable waveguide adapter and a circular clamp which secures the adapter to the chamber assembly. The chamber assembly includes an aperture plate, a microwave transparent window, a chamber body and a microwave sensor which is mounted on the chamber body. The chamber body has a proximate end opening adapted to admit microwave energy into the cavity and a distal end disposed generally on the opposite side of the cavity from the proximate end opening. The chamber body further has a gas outlet port adapted to permit the flow of an excited gas out of the cavity and a gas inlet port adapted to admit a precursor gas into the cavity. The gas inlet port has a center axis which is disposed between the proximate end opening of the chamber body and the midpoint between the proximate end opening and the distal end of the body.
摘要翻译：提供了用于远程产生用于半导体制造的等离子体的改进的等离子体施加器。在一个实施例中，等离子体施加器由腔室组件，可移除波导适配器和将适配器固定到腔室组件的圆形夹具构成。腔室组件包括孔板，微波透明窗，室主体和安装在腔体上的微波传感器。室主体具有适于将微波能量引入空腔中的近端开口，以及大致位于与近端开口相反的空腔相对侧的远端。腔体还具有气体出口端口，其适于允许将激发气体流出空腔，气体入口端口适于将前体气体引入空腔。气体入口具有中心轴线，该中心轴线设置在腔室主体的近端开口和本体的近端开口和远端之间的中点之间。

8. 外观设计

USD446506S1 Monolith processing system platform 失效
标题翻译：单片处理系统平台
公开(公告)号：USD446506S1
公开(公告)日：2001-08-14
申请号：US29114735
申请日：1999-11-30
申请人： Avi Tepman
设计人： Avi Tepman

9. 发明授权

US6136163A Apparatus for electro-chemical deposition with thermal anneal chamber 有权
标题翻译：具有热退火室的电化学沉积设备
公开(公告)号：US6136163A
公开(公告)日：2000-10-24
申请号：US263126
申请日：1999-03-05
申请人： Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl
发明人： Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl
IPC分类号： B65G49/07 , C25D7/12 , H01L21/00 , H01L21/02 , H01L21/288 , C25D17/00 , C25B9/00 , C25B15/00
CPC分类号： H01L21/6723 , C25D17/001 , H01L21/67098
摘要： The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, a rapid thermal anneal chamber disposed adjacent the loading station, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. One aspect of the invention provides a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results. Preferably, the electro-chemical deposition system includes a system controller adapted to control the electro-chemical deposition process and the components of the electro-chemical deposition system, including the rapid thermal anneal chamber disposed adjacent the loading station.
摘要翻译：本发明通常提供一种电化学沉积系统，其被设计成具有可扩展以适应未来设计规则和间隙填充要求的柔性结构，并提供令人满意的吞吐量以满足其它处理系统的需求。电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与加载站相邻设置的快速热退火室，与主机连接设置的一个或多个处理单元，以及流体连接到所述一个或多个电处理单元的电解质供应。本发明的一个方面提供了用于增强沉积结果的后电化学沉积处理，例如快速热退火处理。优选地，电化学沉积系统包括适于控制电化学沉积过程和电化学沉积系统的部件的系统控制器，包括邻近加载站设置的快速热退火室。

10. 发明授权

US6071372A RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls 失效
标题翻译： RF等离子体蚀刻反应器，具有内部感应线圈天线和导电室壁
公开(公告)号：US6071372A
公开(公告)日：2000-06-06
申请号：US869798
申请日：1997-06-05
申请人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Yin , Peter Loewenhardt , Jeng H. Hwang , Steve Mak
发明人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Yin , Peter Loewenhardt , Jeng H. Hwang , Steve Mak
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , C23F1/02 , C23C16/00
CPC分类号： H01J37/32477 , H01J37/321
摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.
摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。保护层防止在室内形成的等离子体从室壁溅射材料。蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。线圈天线可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

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