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1. 发明授权

US06919168B2 Masking methods and etching sequences for patterning electrodes of high density RAM capacitors 失效
标题翻译：用于高密度RAM电容器的图形化电极的掩模方法和蚀刻顺序
公开(公告)号：US06919168B2
公开(公告)日：2005-07-19
申请号：US10057674
申请日：2002-01-24
申请人： Jeng H. Hwang , Steve S. Y. Mak , True-Lon Lin , Chentsau Ying , John W. Schaller
发明人： Jeng H. Hwang , Steve S. Y. Mak , True-Lon Lin , Chentsau Ying , John W. Schaller
IPC分类号： C23F4/00 , H01L21/02 , H01L21/3213 , G03F7/00 , G03F7/36
CPC分类号： H01L28/60 , C23F4/00 , H01L21/32136 , H01L21/32139
摘要： A method of etching a noble metal electrode layer disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.35 μm and having a noble metal profile equal to or greater than about 80°. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the noble metal electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising a gas selected from the group consisting of nitrogen, oxygen, a halogen (e.g., chlorine), argon, and a gas selected from the group consisting of BCl3, HBr, and SiCl4 mixtures thereof. Masking methods and etching sequences for patterning high density RAM capacitors are also provided.
摘要翻译：一种蚀刻设置在基板上的贵金属电极层的方法，以制造半导体器件，该半导体器件包括间隔等于或小于约0.35μm并且具有等于或大于约80°的贵金属形状的多个电极。该方法包括将衬底加热到大于约150℃的温度，并且通过采用蚀刻剂气体的高密度电感耦合等离子体蚀刻贵金属电极层，所述等离子体包括选自氮，氧，卤素（例如氯），氩气和选自BCl 3，HBr和SiCl 4+混合物的气体。还提供了用于图案化高密度RAM电容器的掩模方法和蚀刻顺序。

2. 发明授权

US5746875A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5746875A
公开(公告)日：1998-05-05
申请号：US551881
申请日：1995-10-16
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
IPC分类号： H05H1/46 , C23C16/44 , C23C16/455 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/42 , H05H1/00
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449
摘要： The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, a device for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas distribution apparatus disposed within the opening in the chamber housing which has at least one slotted aperture facing the interior of the chamber and a device for controlling the flow rate of gas from the one or more slotted apertures, and a gas feed line from the supply to the gas distribution apparatus. In a preferred embodiment, the gas distribution apparatus includes a center member surrounded by at least one annular member with a gap therebetween comprising the slotted aperture. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of a ceramic, fused quartz, polymeric or anodized aluminum material and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
摘要翻译：本发明体现在一种用于将气体注入等离子体反应器真空室中的气体注入装置，其具有腔室壳体，保持要加工的工件的基座，用于将RF能量施加到腔室中的装置，该气体注入装置具有气体供应在气体中含有蚀刻剂物质，在腔室中的开口，设置在腔室中的开口内的气体分配装置，其具有面向腔室内部的至少一个开口孔，以及用于控制气体流速的装置从一个或多个开槽孔，以及从供给到气体分配装置的气体供给管线。在优选实施例中，气体分配装置包括由至少一个环形构件包围的中心构件，其间具有间隙，包括开槽孔。优选地，气体分配装置的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。在一个示例中，气体分配装置的每个构件包括陶瓷，熔融石英，聚合物或阳极氧化铝材料中的一种，气体供给管线包括不锈钢。优选地，每个构件在气体分配装置的组装之前具有其表面抛光。

3. 发明授权

US5545289A Passivating, stripping and corrosion inhibition of semiconductor substrates 失效
标题翻译：半导体衬底的钝化，剥离和腐蚀抑制
公开(公告)号：US5545289A
公开(公告)日：1996-08-13
申请号：US268377
申请日：1994-06-29
申请人： Jian Chen , James S. Papanu , Steve S. Y. Mak , Carmel Ish-Shalom , Peter Hsieh , Wesley G. Lau , Charles S. Rhoades , Brian Shieh , Ian S. Latchford , Karen A. Williams , Victoria Yu-Wang
发明人： Jian Chen , James S. Papanu , Steve S. Y. Mak , Carmel Ish-Shalom , Peter Hsieh , Wesley G. Lau , Charles S. Rhoades , Brian Shieh , Ian S. Latchford , Karen A. Williams , Victoria Yu-Wang
IPC分类号： H01L21/02 , H01L21/311 , H01L21/3213 , H01L21/00
CPC分类号： H01L21/02071 , H01L21/31138 , Y10S438/958
摘要： A process for passivating, and optionally stripping and inhibiting corrosion of an etched substrate (20), is described. In the process, a substrate (20) having etchant byproducts (24) thereon, is placed into a vacuum chamber (52), and passivated in a multicycle passivation process comprising at least two passivating steps. In each passivating step, passivating gas is introduced into the vacuum chamber (52) and a plasma is generated from the passivating gas. When the substrate also has remnant resist (26) thereon, the resist (26) is stripped in a multicycle passivation and stripping process, each cycle including a passivating step and a stripping step. The stripping step is performed by introducing a stripping gas into the vacuum chamber (52) and generating a plasma from the stripping gas. In the multicycle process, the passivating and optional stripping steps, are repeated at least once in the same order that the steps were done. Alternatively, the substrate (20) can also be passivated in a single cycle process using a passivating gas comprising water vapor, oxygen, and nitrogen. Optionally, corrosion of the substrate is further inhibited by introducing an amine vapor into the vacuum chamber (52) so that amine adsorps onto the substrate (20), forming a corrosion inhibition amine layer on the surface of the substrate (20).
摘要翻译：描述了钝化和任选地剥离和抑制腐蚀的衬底（20）的腐蚀的方法。在该方法中，将具有蚀刻剂副产物（24）的衬底（20）放置在真空室（52）中，并且在包括至少两个钝化步骤的多圈钝化工艺中钝化。在每个钝化步骤中，将钝化气体引入真空室（52）中，并从钝化气体产生等离子体。当衬底上还具有残余抗蚀剂（26）时，抗蚀剂（26）在多周期钝化和剥离过程中被剥离，每个循环包括钝化步骤和剥离步骤。通过将汽提气体引入真空室（52）并从汽提气体产生等离子体来进行汽提步骤。在多周期过程中，钝化和可选的剥离步骤以与步骤相同的顺序重复至少一次。或者，也可以使用包括水蒸气，氧气和氮气的钝化气体在单周期过程中钝化基板（20）。任选地，通过将胺蒸气引入真空室（52）进一步抑制基板的腐蚀，使得胺吸附到基板（20）上，在基板（20）的表面上形成腐蚀抑制胺层。

4. 发明授权

US06598615B1 Compact independent pressure control and vacuum isolation for a turbomolecular pumped plasma reaction chamber 失效
标题翻译：用于涡轮分子泵浦等离子体反应室的紧凑的独立压力控制和真空隔离
公开(公告)号：US06598615B1
公开(公告)日：2003-07-29
申请号：US09708345
申请日：2000-11-07
申请人： John Holland , Michael Barnes , Steve S. Y. Mak , Patrick Leahey , Jonathan D. Mohn
发明人： John Holland , Michael Barnes , Steve S. Y. Mak , Patrick Leahey , Jonathan D. Mohn
IPC分类号： C23C1650
CPC分类号： H01J37/32834 , Y10T137/0396 , Y10T137/86083 , Y10T137/86163
摘要： A method and apparatus for use in conjunction with a plasma reaction chamber provide both throttling functionality and independent vacuum isolation for a turbomolecular pump. A throttle valve provides for precise reaction chamber pressure regulation, and a gate valve prevents extended exposure of the turbomolecular pump to atmospheric conditions during cleaning or other maintenance operations. The throttle valve and the gate valve may be actuated independently.
摘要翻译：与等离子体反应室一起使用的方法和装置为涡轮分子泵提供节流功能和独立的真空隔离。节流阀提供精确的反应室压力调节，并且闸阀防止在清洁或其他维护操作期间涡轮分子泵在大气条件下的长时间暴露。节流阀和闸阀可独立地致动。

5. 发明授权

US06277251B1 Apparatus and method for shielding a dielectric member to allow for stable power transmission into a plasma processing chamber 失效
标题翻译：用于屏蔽电介质构件以允许稳定的电力传输到等离子体处理室中的装置和方法
公开(公告)号：US06277251B1
公开(公告)日：2001-08-21
申请号：US09515695
申请日：2000-02-29
申请人： Jeng H. Hwang , Steve S. Y. Mak , Yan Ye
发明人： Jeng H. Hwang , Steve S. Y. Mak , Yan Ye
IPC分类号： C23C1434
CPC分类号： H01J37/32504
摘要： An assembly for allowing stable power transmission into a plasma processing chamber comprising a dielectric member; and at least one material deposition support assembly secured to the dielectric member for receiving and supporting the deposition of materials during processing of a substrate and a chamber having a controlled environment and containing a plasma of a processing gas. A plasma reactor for processing substrates having a reactor chamber including a chamber sidewall and a dielectric window supported by the chamber sidewall. A plurality of deposition support members is coupled to an inside surface of the dielectric window for receiving and supporting a deposition of materials during processing of substrates. In an alternative embodiment of the invention, the plurality of deposition support members is connected to a liner assembly instead of to the dielectric window. The liner assembly is supported by the chamber sidewall. A pedestal is disposed in the reactor chamber for supporting substrates, such as semiconductor wafers, in the reacting chamber. The plasma reactor also includes a processing power source, a processing power gas-introducing assembly for introducing processing gas into the reactor chamber, and a processing power-transmitting member for transmitting power into the reactor interior to aid in sustaining a plasma from the processing gas within the reacting chamber. A method for adjusting the density of plasma contained in a chamber wherein substrates are to be processed. A method of processing (e.g. etching or depositing) a metal layer disposed on a substrate.
摘要翻译：一种用于允许稳定的电力传输到包括电介质构件的等离子体处理室中的组件; 以及固定到电介质构件的至少一个材料沉积支撑组件，用于在衬底和具有受控环境的腔室的处理过程中接收和支撑材料的沉积并且包含处理气体的等离子体。一种用于处理基板的等离子体反应器，其具有包括室侧壁和由室侧壁支撑的电介质窗的反应室。多个沉积支撑构件联接到电介质窗口的内表面，用于在衬底的处理期间接收和支撑材料的沉积。在本发明的替代实施例中，多个沉积支撑构件连接到衬垫组件而不是电介质窗口。衬套组件由腔室侧壁支撑。基座设置在反应室中，用于在反应室中支撑诸如半导体晶片的衬底。等离子体反应器还包括处理电源，用于将处理气体引入反应室的处理能力气体引入组件和用于将动力传送到反应器内部以帮助维持来自处理气体的等离子体的处理能力传递部件在反应室内。一种用于调节包含在其中将要处理衬底的腔室中的等离子体的密度的方法。处理（例如蚀刻或沉积）设置在基板上的金属层的方法。

6. 发明授权

US06270687B1 RF plasma method 失效
标题翻译：射频等离子体法
公开(公告)号：US06270687B1
公开(公告)日：2001-08-07
申请号：US09564042
申请日：2000-04-27
申请人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Zheyao Yin , Peter Loewenhardt , Jeng Hwang , Steve S. Y. Mak
发明人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Zheyao Yin , Peter Loewenhardt , Jeng Hwang , Steve S. Y. Mak
IPC分类号： B44C122
CPC分类号： H01J37/32477 , H01J37/321
摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.
摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。保护层防止在室内形成的等离子体从室壁溅射材料。蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。线圈天线可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

7. 发明授权

US5885358A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5885358A
公开(公告)日：1999-03-23
申请号：US682803
申请日：1996-07-09
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
IPC分类号： C23C16/44 , C23C16/455 , C23C16/50 , H01J37/32 , H01L21/02 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/321 , C23C16/455 , H01J37/3244
摘要： A gas injection system for injecting gases into a plasma reactor having a vacuum chamber with a sidewall, a pedestal for holding a semiconductor wafer to be processed, and a RF power applicator for applying RF power into the chamber. The gas injection system includes at least one gas supply containing gas, a gas distribution apparatus which has at least one slotted aperture facing the interior of the chamber, and one or more gas feed lines connecting the gas supply or supplies to the gas distribution apparatus. A preferred embodiment of a radial gas distribution apparatus in accordance with the present invention is disposed in the chamber sidewall and includes plural gas distribution nozzles each with a slotted aperture facing an interior of the chamber. Gas feed lines are employed to respectively connect each gas distribution nozzle to separate ones of the gas supplies.
摘要翻译：一种用于将气体注入等离子体反应器的气体注入系统，所述等离子体反应器具有具有侧壁的真空室，用于保持要处理的半导体晶片的基座和用于将RF功率施加到所述室中的RF功率施加器。气体注入系统包括至少一个含气体的气体供给装置，具有面向腔室内部的至少一个开口孔的气体分配装置以及将气体供给或供给部连接到气体分配装置的一个或多个气体供给管线。根据本发明的径向气体分配装置的优选实施例设置在室侧壁中，并且包括多个气体分配喷嘴，每个气体分配喷嘴均具有面向腔室内部的开口孔。采用气体供给管线分别连接每个气体分配喷嘴以分离气体供应源。

8. 发明授权

US5756400A Method and apparatus for cleaning by-products from plasma chamber surfaces 失效
标题翻译：从等离子体室表面清洗副产品的方法和设备
公开(公告)号：US5756400A
公开(公告)日：1998-05-26
申请号：US568064
申请日：1995-12-08
申请人： Yan Ye , Diana Xiaobing Ma , Gerald Zheyao Yin , Keshav Prasad , Mark Siegel , Steve S. Y. Mak , Paul Martinez , James S. Papanu , Danny Chien Lu
发明人： Yan Ye , Diana Xiaobing Ma , Gerald Zheyao Yin , Keshav Prasad , Mark Siegel , Steve S. Y. Mak , Paul Martinez , James S. Papanu , Danny Chien Lu
IPC分类号： C23F4/00 , B08B7/00 , H01L21/205 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/00
CPC分类号： B08B7/0042 , Y10S438/905
摘要： The present invention provides an apparatus and process for plasma cleaning the interior surfaces of semiconductor processing chambers. The method is directed to the dry etching of accumulated contaminant residues attached to the inner surfaces of the plasma processing chamber and includes introducing a cleaning gas mixture of a halogen-containing gas; activating a plasma in an environment substantially free of oxygen species; contacting the contaminant residues with the activated cleaning gas to volatilize the residues; and removing the gaseous by-products from the chamber. The etchant gaseous mixture comprises an even or greater amount of at least one fluorine-containing gas and an even or lesser amount of at least one chlorine-containing gas. The instant invention enables the intermittent use of the cleaning steps in an ongoing plasma processing of semiconductor wafers without chamber downtime and significant loss of wafer production.
摘要翻译：本发明提供了一种用于等离子体清洁半导体处理室内表面的装置和方法。该方法涉及连接到等离子体处理室的内表面上的累积污染物残留物的干蚀刻，并且包括引入含卤素气体的清洁气体混合物; 在基本上不含氧物质的环境中激活等离子体; 使污染物残留物与活化的清洁气体接触以挥发残余物; 并从室中除去气态副产物。蚀刻剂气体混合物包含甚至或更多量的至少一种含氟气体和甚至或更少量的至少一种含氯气体。本发明能够在半导体晶片的持续等离子体处理中间歇地使用清洁步骤，而无需室停机和晶片生产的显着损失。

9. 发明授权

US06323132B1 Etching methods for anisotropic platinum profile 失效
标题翻译：各向异性铂型材蚀刻方法
公开(公告)号：US06323132B1
公开(公告)日：2001-11-27
申请号：US09251826
申请日：1999-02-17
申请人： Jeng H. Hwang , Chentsau Ying , Kang-Lie Chiang , Steve S. Y. Mak
发明人： Jeng H. Hwang , Chentsau Ying , Kang-Lie Chiang , Steve S. Y. Mak
IPC分类号： H01L21302
CPC分类号： H01L28/60 , C23F4/00 , H01L21/32136 , H01L21/32139
摘要： A method of etching a platinum electrode layer disposed on a substrate to produce a semiconductor device including a plurality of platinum electrodes. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the platinum electrode layer by employing a plasma of an etchant gas comprising nitrogen and a halogen (e.g. chlorine), and a gas selected from the group consisting of a noble gas (e.g. argon), BCl3, HBr, SiCl4 and mixtures thereof. The substrate may be heated in a reactor chamber having a dielectric window including a deposit-receiving surface having a surface finish comprising a peak-to-valley roughness height with an average height value of greater than about 1000 Å.
摘要翻译：一种蚀刻设置在基板上的铂电极层的方法，以制造包括多个铂电极的半导体器件。该方法包括将衬底加热到大于约150℃的温度，并且通过使用包含氮和卤素（例如氯）的蚀刻剂气体的等离子体和选自以下的气体来蚀刻铂电极层：惰性气体（例如氩气），BCl 3，HBr，SiCl 4及其混合物。衬底可以在具有介电窗口的反应器室中加热，所述电介质窗口包括具有表面光洁度的沉积物接收表面，所述沉积物接收表面包括具有大于约的平均高度值的峰 - 谷粗糙度高度。

10. 发明授权

US6120640A Boron carbide parts and coatings in a plasma reactor 失效
标题翻译：等离子体反应器中的碳化硼零件和涂层
公开(公告)号：US6120640A
公开(公告)日：2000-09-19
申请号：US770092
申请日：1996-12-19
申请人： Hong Shih , Nianci Han , Steve S. Y. Mak , Gerald Zheyao Yin
发明人： Hong Shih , Nianci Han , Steve S. Y. Mak , Gerald Zheyao Yin
IPC分类号： C01B31/36 , C23C4/10 , C23C28/04 , C23C30/00 , H01J37/32 , H01L21/02 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/00
CPC分类号： H01J37/32495 , C23C28/044 , Y10S156/914
摘要： A plasma etch reactor having interior surfaces facing the plasma composed of boron carbide, preferably principally composed of B.sub.4 C. The boron carbide may be a bulk sintered body or may be a layer of boron carbide coated on a chamber part. The boron carbide coating may be applied by thermal spraying, such as plasma spraying, by chemical vapor deposition, or by other layer forming technique such as a surface converting reaction. The boron carbide is highly resistant to high-density plasma etchants such as BCl.sub.3. The plasma sprayed coating is advantageously applied to only a portion of an anodized aluminum wall. The boron carbide may be sprayed over the exposed portion of the aluminum over which the anodization has been removed. A band of the aluminum substrate at the transition between the anodization and the boron carbide is roughened prior to anodization so that the boron carbide sticks to the correspondingly roughened surface of the anodization. Alternatively, the entire wall area of the anodized aluminum to be coated is roughened, and the boron carbide is sprayed over the anodization.
摘要翻译：一种等离子体蚀刻反应器，其具有面向由碳化硼组成的等离子体的内表面，优选主要由B4C组成。碳化硼可以是块状烧结体，也可以是涂覆在室部上的碳化硼层。碳化硼涂层可以通过热喷涂，例如等离子喷涂，化学气相沉积，或其它层形成技术如表面转化反应来施加。碳化硼对高密度等离子体蚀刻剂如BCl 3具有高度的抗性。等离子喷涂涂层有利地仅施加于阳极氧化铝壁的一部分。碳化硼可以喷涂在已经去除阳极氧化的铝的暴露部分上。在阳极氧化之前，在阳极氧化和碳化硼之间的过渡处的铝基材的带被粗糙化，使得碳化硼粘附到阳极氧化的相应的粗糙化表面。或者，要涂覆的阳极氧化铝的整个壁面被粗糙化，并且碳化硼被喷涂在阳极氧化上。

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