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1. 发明授权

US6071372A RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls 失效
标题翻译： RF等离子体蚀刻反应器，具有内部感应线圈天线和导电室壁
公开(公告)号：US6071372A
公开(公告)日：2000-06-06
申请号：US869798
申请日：1997-06-05
申请人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Yin , Peter Loewenhardt , Jeng H. Hwang , Steve Mak
发明人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Yin , Peter Loewenhardt , Jeng H. Hwang , Steve Mak
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , C23F1/02 , C23C16/00
CPC分类号： H01J37/32477 , H01J37/321
摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.
摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。保护层防止在室内形成的等离子体从室壁溅射材料。蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。线圈天线可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

2. 发明授权

US06270687B1 RF plasma method 失效
标题翻译：射频等离子体法
公开(公告)号：US06270687B1
公开(公告)日：2001-08-07
申请号：US09564042
申请日：2000-04-27
申请人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Zheyao Yin , Peter Loewenhardt , Jeng Hwang , Steve S. Y. Mak
发明人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Zheyao Yin , Peter Loewenhardt , Jeng Hwang , Steve S. Y. Mak
IPC分类号： B44C122
CPC分类号： H01J37/32477 , H01J37/321
摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.
摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。保护层防止在室内形成的等离子体从室壁溅射材料。蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。线圈天线可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

3. 发明授权

US06352049B1 Plasma assisted processing chamber with separate control of species density 失效
标题翻译：等离子辅助处理室具有单独的物种密度控制
公开(公告)号：US06352049B1
公开(公告)日：2002-03-05
申请号：US09119417
申请日：1998-07-20
申请人： Gerald Yin , Arnold Kolandenko , Hong Ching Shan , Peter Loewenhardt , Chii Lee , Yan Ye , Xueyan Qian , Songlin Xu , Arthur Chen , Arthur Sato , Michael Grimbergen , Diana Ma , John Yamartino , Chun Yan , Wade Zawalski
发明人： Gerald Yin , Arnold Kolandenko , Hong Ching Shan , Peter Loewenhardt , Chii Lee , Yan Ye , Xueyan Qian , Songlin Xu , Arthur Chen , Arthur Sato , Michael Grimbergen , Diana Ma , John Yamartino , Chun Yan , Wade Zawalski
IPC分类号： C23E1648
CPC分类号： H01J37/32871
摘要： The present invention provides an apparatus and method, for plasma assisted processing of a workpiece, which provides for separate control of species density within a processing plasma. The present invention has a processing chamber and at least one collateral chamber. The collateral chamber is capable of generating a collateral plasma and delivering it to the processing chamber. To control the densities of the particle species within the processing chamber the present invention may have: a filter interposed between the collateral chamber and the processing chamber, primary chamber source power, several collateral chambers providing separate inputs to the processing chamber, or combinations thereof. Collateral plasma may be: filtered, combined with primary chamber generated plasma, combined with another collateral plasma, or combinations thereof to separately control the densities of the species comprising the processing plasma.
摘要翻译：本发明提供了一种用于工件的等离子体辅助处理的装置和方法，其提供对处理等离子体内的物质密度的单独控制。本发明具有处理室和至少一个辅助室。辅助室能够产生旁路血浆并将其输送到处理室。为了控制处理室内的颗粒物质的密度，本发明可以具有：插入在侧室和处理室之间的过滤器，主室源功率，向处理室提供单独输入的若干附属室，或其组合。附带等离子体可以是：过滤，与初级室产生的等离子体组合，与另一副侧血浆或其组合组合以分别控制包含处理血浆的物质的密度。

4. 发明授权

US5817534A RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers 失效
标题翻译： RF等离子体反应器，其具有用于在半导体晶片的处理期间进行清洁的清洁电极
公开(公告)号：US5817534A
公开(公告)日：1998-10-06
申请号：US567376
申请日：1995-12-04
申请人： Yan Ye , Hiroji Hanawa , Diana Xiaobing Ma , Gerald Zheyao Yin , Peter Loewenhardt , Donald Olgado , James Papanu , Steven S.Y. Mak
发明人： Yan Ye , Hiroji Hanawa , Diana Xiaobing Ma , Gerald Zheyao Yin , Peter Loewenhardt , Donald Olgado , James Papanu , Steven S.Y. Mak
IPC分类号： H05H1/46 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/304 , H01L21/3065 , H05H1/00
CPC分类号： H01L21/67028 , H01J37/32862 , Y10S438/905
摘要： The invention is carried out in a plasma reactor for processing a semiconductor wafer, the plasma reactor having a chamber for containing a processing gas and having a conductor connected to an RF power source for coupling RF power into the reactor chamber to generate from the processing gas a plasma inside the chamber, the chamber containing at least one surface exposed toward the plasma and susceptible to contamination by particles produced during processing of the wafer, the invention being carried out by promoting, during processing of the wafer, bombarding of particles from the plasma onto the one surface to remove therefrom contaminants deposited during processing of the wafer. Such promoting of bombarding is carried out by providing an RF power supply and coupling, during processing of the wafer, RF power from the supply to the one surface. The coupling may be performed by a capacitive cleaning electrode adjacent the one surface, the capacitive cleaning electrode connected to the RF power supply. The capacitive cleaning electrode preferably is disposed on a side of the one surface opposite the plasma so as to be protected from contact with the plasma. Alternatively, the coupling may be carried out by a direct electrical connection from the RF power supply to the one surface.
摘要翻译：本发明在用于处理半导体晶片的等离子体反应器中进行，等离子体反应器具有用于容纳处理气体的室，并具有连接到RF电源的导体，用于将RF功率耦合到反应器室中以从处理气体产生腔室内的等离子体，该腔室包含至少一个暴露于等离子体的表面并容易受到在晶片加工期间产生的颗粒的污染，本发明通过在晶片加工期间促进从等离子体中轰击颗粒而进行在一个表面上去除在晶片加工期间沉积的污染物。通过在晶片的处理期间提供RF电源和耦合来进行轰击的这种促进是从电源到单个表面的RF功率。耦合可以通过与一个表面相邻的电容清洁电极，电容清洁电极连接到RF电源来进行。电容式清洁电极优选地设置在与等离子体相对的一个表面的一侧，以便被保护而不与等离子体接触。或者，耦合可以通过从RF电源到一个表面的直接电连接来执行。

5. 发明授权

US5801386A Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using same 失效
标题翻译：用于测量半导体晶片处理系统内的等离子体特性的装置及其制造和使用方法
公开(公告)号：US5801386A
公开(公告)日：1998-09-01
申请号：US653212
申请日：1996-05-28
申请人： Valentin N. Todorov , Yoshi Tanase , Xue-Yu Qian , Arthur H. Sato , Peter Loewenhardt , Yan Ye , Shaoher X. Pan , Dragan Podlesnik
发明人： Valentin N. Todorov , Yoshi Tanase , Xue-Yu Qian , Arthur H. Sato , Peter Loewenhardt , Yan Ye , Shaoher X. Pan , Dragan Podlesnik
IPC分类号： H01J37/32 , H01J37/244
CPC分类号： H01J37/32935
摘要： Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using the apparatus. The apparatus contains a first insulator layer upon which one or more conductive collector pads are formed by patterning and etching a copper laminate. Each collector pad is connected to a conductive lead (e.g., a printed circuit trace) that extends from each collector pad to the edge of the first insulator layer. A second insulator layer is positioned above the first insulator layer such that the collector pad(s) and their respective lead(s) are sandwiched between the two insulator layers. An adhesive is used to affix the second insulator to the first insulator and the collector pads. The collector pads are exposed to the plasma through apertures defined by the second insulator layer.
摘要翻译：用于测量半导体晶片处理系统内的等离子体特性的装置及其制造和使用方法。该装置包含第一绝缘体层，通过图案化和蚀刻铜层压体而形成一个或多个导电集电极焊盘。每个集电极焊盘连接到从每个集电极焊盘延伸到第一绝缘体层的边缘的导电引线（例如印刷电路迹线）。第二绝缘体层位于第一绝缘体层之上，使得集电极焊盘及其相应的引线夹在两个绝缘体层之间。使用粘合剂将第二绝缘体固定到第一绝缘体和集电板。集电极焊盘通过由第二绝缘体层限定的孔暴露于等离子体。

6. 发明授权

US06471822B1 Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma 失效
标题翻译：磁阻等离子体磁感应耦合等离子体反应器
公开(公告)号：US06471822B1
公开(公告)日：2002-10-29
申请号：US09263001
申请日：1999-03-05
申请人： Gerald Yin , Peter Loewenhardt , Arnold Kholodenko , Hong Chin Shan , Chii Lee , Dan Katz
发明人： Gerald Yin , Peter Loewenhardt , Arnold Kholodenko , Hong Chin Shan , Chii Lee , Dan Katz
IPC分类号： H05H100
CPC分类号： H01J37/321 , H01J37/32669
摘要： The present invention provides a plasma reactor having a plasma source chamber capable of generating a high density plasma typically utilizing a helicon wave. The plasma is delivered to a process chamber having a workpiece. The present invention may provide a plurality of magnets, each being located longitudinally around an axis perpendicular to the plane of the workpiece to form a magnetic bucket that extends the length of the side wall of the processing chamber and across a workpiece insertion opening and a vacuum pump opening. The magnetic bucket of the present invention may be formed so that the pedestal need not be raised to be within the bucket, or may be formed by permanent magnets oriented with one pole of each magnet facing the interior of the processing chamber, or with opposite poles of adjacent magnets facing each other, thereby forming cusps around the axis perpendicular to the plane of the workpiece. Current carrying conductors may generate all or part of the magnetic bucket. The present invention may provide an inner wall member secured within the processing chamber. All or a portion of the inner wall may be grounded to provide a well defined anode for bias power that is applied to the workpiece pedestal, and may be heated so that deposits do not cause its impedance to drift.
摘要翻译：本发明提供一种等离子体反应器，其具有能够产生通常利用螺旋波的高密度等离子体源室。将等离子体输送到具有工件的处理室。本发明可以提供多个磁体，每个磁体纵向地围绕垂直于工件的平面的轴定位，以形成一个磁性铲斗，其延伸处理室的侧壁的长度并穿过工件插入口和真空泵开口。本发明的磁性铲斗可以形成为使得底座不需要升高到铲斗内部，或者可以由定向为每个磁体的一极的方向定向的永久磁铁形成，面对处理室的内部，或者具有相对的极相邻的磁体彼此面对，从而围绕垂直于工件的平面的轴线形成尖端。载流导体可以产生磁桶的全部或部分。本发明可以提供固定在处理室内的内壁件。内壁的全部或一部分可以被接地以提供良好限定的用于施加到工件基座的偏置功率的阳极，并且可以被加热，使得沉积物不会使其阻抗漂移。

7. 发明授权

US06270617B1 RF plasma reactor with hybrid conductor and multi-radius dome ceiling 失效
标题翻译：射频等离子体反应器与混合导体和多半圆顶天花板
公开(公告)号：US06270617B1
公开(公告)日：2001-08-07
申请号：US08778051
申请日：1997-01-02
申请人： Gerald Yin , Diana Xiabing Ma , Peter Loewenhardt , Philip Salzman , Allen Zhao , Hiroji Hanawa
发明人： Gerald Yin , Diana Xiabing Ma , Peter Loewenhardt , Philip Salzman , Allen Zhao , Hiroji Hanawa
IPC分类号： H05H100
CPC分类号： H01J37/321
摘要： An RF plasma reactor for processing a semiconductor wafer in a reactor chamber with a multi-radius dome-shaped ceiling and a gas inlet for supplying a process gas into the chamber includes an overhead RF signal applicator near the ceiling for applying an RF signal into the chamber through the ceiling to maintain a plasma of the process gas in the chamber, the plasma having a radial ion density distribution near the plane of the pedestal which is center-high for a greater height of the ceiling above the pedestal and is center-low for a lesser height, the height of the ceiling being intermediate the greater and lesser heights such that the radial ion density distribution is neither center-high nor center-low. In another aspect of the invention, the RF signal applicator has an annular distribution characterized by an effective mean radius, the plasma having a radial ion density distribution with respect to an axis of symmetry of the ceiling which is center-high for a lesser mean radius of the signal applicator and center-low for a greater mean radius of the signal applicator, the mean radius of the signal applicator being intermediate the greater and lesser mean radii such that the radial ion density distribution is neither center-high nor center-low.
摘要翻译：用于在具有多半圆顶形天花板的反应室中处理半导体晶片的RF等离子体反应器和用于将工艺气体供应到室中的气体入口包括在天花板附近的顶置RF信号施加器，用于将RF信号施加到通过天花板保持腔室中的处理气体的等离子体，等离子体在基座的平面附近具有径向离子密度分布，该基座的平面是中心高的，用于在基座上方的天花板的更高的高度，并且是中心的对于较小的高度，天花板的高度在较大和较小的高度之间，使得径向离子密度分布既不是中心高也不是中心低。在本发明的另一方面，RF信号施加器具有由有效平均半径表征的环形分布，等离子体相对于天花板的对称轴线具有径向离子密度分布，其对于较小的平均半径为中心高并且信号施加器的平均半径更大，信号施加器的平均半径在较大和较小的平均半径之间，使得径向离子密度分布既不是中心高也不是中心低。

8. 发明授权

US06475335B1 RF plasma reactor with hybrid conductor and multi-radius dome ceiling 失效
标题翻译：射频等离子体反应器与混合导体和多半圆顶天花板
公开(公告)号：US06475335B1
公开(公告)日：2002-11-05
申请号：US09658572
申请日：2000-09-08
申请人： Gerald Yin , Diana Xiabing Ma , Peter Loewenhardt , Philip Salzman , Allen Zhao , Hiroji Hanawa
发明人： Gerald Yin , Diana Xiabing Ma , Peter Loewenhardt , Philip Salzman , Allen Zhao , Hiroji Hanawa
IPC分类号： H05H100
CPC分类号： H01J37/321
摘要： An RF plasma reactor for processing a semiconductor wafer in a reactor chamber with a multi-radius dome-shaped ceiling and a gas inlet for supplying a process gas into the chamber includes an overhead RF signal applicator near the ceiling for applying an RF signal into the chamber through the ceiling to maintain a plasma of the process gas in the chamber, the plasma having a radial ion density distribution near the plane of the pedestal which is center-high for a greater height of the ceiling above the pedestal and is center-low for a lesser height, the height of the ceiling being intermediate the greater and lesser heights such that the radial ion density distribution is neither center-high nor center-low. In another aspect of the invention, the RF signal applicator has an annular distribution characterized by an effective mean radius, the plasma having a radial ion density distribution with respect to an axis of symmetry of the ceiling which is center-high for a lesser mean radius of the signal applicator and center-low for a greater mean radius of the signal applicator, the mean radius of the signal applicator being intermediate the greater and lesser mean radii such that the radial ion density distribution is neither center-high nor center-low.
摘要翻译：用于在具有多半圆顶形天花板的反应室中处理半导体晶片的RF等离子体反应器和用于将工艺气体供应到室中的气体入口包括在天花板附近的顶置RF信号施加器，用于将RF信号施加到通过天花板保持腔室中的处理气体的等离子体，等离子体在基座的平面附近具有径向离子密度分布，该基座的平面是中心高的，用于在基座上方的天花板的更高的高度，并且是中心的对于较小的高度，天花板的高度在较大和较小的高度之间，使得径向离子密度分布既不是中心高也不是中心低。在本发明的另一方面，RF信号施加器具有由有效平均半径表征的环形分布，等离子体相对于天花板的对称轴线具有径向离子密度分布，其对于较小的平均半径为中心高并且信号施加器的平均半径更大，信号施加器的平均半径在较大和较小的平均半径之间，使得径向离子密度分布既不是中心高也不是中心低。

9. 发明授权

US07601246B2 Methods of sputtering a protective coating on a semiconductor substrate 有权
标题翻译：在半导体衬底上溅射保护涂层的方法
公开(公告)号：US07601246B2
公开(公告)日：2009-10-13
申请号：US10952088
申请日：2004-09-29
申请人： Jisoo Kim , Jong Shon , Biming Yen , Peter Loewenhardt
发明人： Jisoo Kim , Jong Shon , Biming Yen , Peter Loewenhardt
IPC分类号： C23C14/34
CPC分类号： C23C14/3457 , C23C14/185 , H01L21/31138 , H01L21/31144 , H01L21/76814 , H01L2221/1063
摘要： Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.
摘要翻译：将含硅或金属材料的保护涂层沉积到半导体衬底上的方法包括将这种材料从电极溅射到等离子体处理室中的半导体衬底上。保护材料可以沉积在覆盖低k材料和/或低k材料的多层掩模上。该方法可用于双镶嵌工艺中以保护掩模并增强蚀刻选择性，以在抗蚀剂剥离过程中保护低k材料免受碳的损耗，和/或保护低k材料免受水分吸收。

10. 发明申请

US20090020417A1 Methods of sputtering a protective coating on a semiconductor substrate 有权
公开(公告)号：US20090020417A1
公开(公告)日：2009-01-22
申请号：US10952088
申请日：2004-09-29
申请人： Jisoo Kim , Jong Shon , Bi Ming Yen , Peter Loewenhardt
发明人： Jisoo Kim , Jong Shon , Bi Ming Yen , Peter Loewenhardt
IPC分类号： C23C14/34
CPC分类号： C23C14/3457 , C23C14/185 , H01L21/31138 , H01L21/31144 , H01L21/76814 , H01L2221/1063
摘要： Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.

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