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    • 1. 发明授权
    • RF plasma etch reactor with internal inductive coil antenna and
electrically conductive chamber walls
    • RF等离子体蚀刻反应器,具有内部感应线圈天线和导电室壁
    • US6071372A
    • 2000-06-06
    • US869798
    • 1997-06-05
    • Yan YeDonald OlgadoAvi TepmanDiana MaGerald YinPeter LoewenhardtJeng H. HwangSteve Mak
    • Yan YeDonald OlgadoAvi TepmanDiana MaGerald YinPeter LoewenhardtJeng H. HwangSteve Mak
    • H05H1/46H01J37/32H01L21/302C23F1/02C23C16/00
    • H01J37/32477H01J37/321
    • An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.
    • RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。 保护层防止在室内形成的等离子体从室壁溅射材料。 蚀刻反应器还具有设置在蚀刻室内的感应线圈天线,其用于通过感应耦合产生等离子体。 类似于室壁,感应线圈天线被构造成防止由等离子体溅射构成天线的材料。 线圈天线​​可以承受在室内实现期望的功率沉积图案所必需的任何配置(例如位置,形状,取向)。 用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。 分段结构涉及使用至少两个线圈段,其中每个段与其它段电隔离并连接到单独的RF功率信号。 单线圈天线或每个线圈段可以具有平面形状,圆柱形,截顶圆锥形,圆顶形或其任何组合。 导电壁电接地以用作工件支撑基座的电接地(即阳极),工件支撑基座连接到RF功率源,以在工件的表面产生偏置电压。