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    • 1. 发明授权
    • Ion implanter with beam resolving apparatus and method for implanting
ions
    • 具有光束分离装置的离子注入机和用于注入离子的方法
    • US5306920A
    • 1994-04-26
    • US980062
    • 1992-11-23
    • Jerry S. KingCarl E. D'AcostaCraig L. JasperDan A. Banks
    • Jerry S. KingCarl E. D'AcostaCraig L. JasperDan A. Banks
    • H01J37/05H01J37/09
    • H01J37/09H01J37/05H01J2237/0455H01J2237/31701
    • An ion implantation apparatus including a resolving aperture-shutter assembly (31) placed in the ion beam path (18). The resolving aperture-shutter assembly includes a movable shutter (34) and a shutter housing surrounding the movable shutter (34). Selected ions in an ion beam path (18) pass through a hole (44) in movable shutter (34) when the movable shutter (34) is in a first position, and are blocked by the solid surfaces when the movable shutter (34) is in a second position. The enclosure (32, 33, 39) completely surrounds the movable shutter (34). The enclosure (32, 33, 39) includes a first aperture (42) aligned with the ion beam path (18) for allowing the selected ions to enter the enclosure and a second aperture (41) aligned with the ion beam path (18) for allowing the selected ions to exit the enclosure after passing through the hole (44) in the movable shutter.
    • 一种离子注入装置,包括放置在离子束路径(18)中的分辨孔径光阑组件(31)。 分辨孔径光阑组件包括活动快门(34)和围绕活动快门(34)的快门壳体。 当活动快门(34)处于第一位置时,离子束路径(18)中的选定离子通过活动快门(34)中的孔(44),并且当活动快门(34)被固定时被固体表面阻挡, 处于第二位置。 外壳(32,33,39)完全包围活动活门(34)。 外壳(32,33,39)包括与离子束路径(18)对准的用于允许所选择的离子进入外壳的第一孔(42)和与离子束路径(18)对准的第二孔(41) 用于允许所选择的离子在通过可移动快门中的孔(44)之后离开外壳。
    • 6. 发明授权
    • Method of etching a semiconductor substrate
    • 蚀刻半导体衬底的方法
    • US5851928A
    • 1998-12-22
    • US562865
    • 1995-11-27
    • Jerry D. CripeJerry L. WhiteCarl E. D'Acosta
    • Jerry D. CripeJerry L. WhiteCarl E. D'Acosta
    • H01L21/301H01L21/306H01L21/308H01L21/302
    • H01L21/30608H01L21/3081
    • A method of etching a semiconductor substrate (11) includes thinning (102) the semiconductor substrate (11), providing (103) a support layer (30) for the semiconductor substrate (11), providing (104) an etch mask (28) over the semiconductor substrate (11), and etching (105) the semiconductor substrate (11) using an etchant mixture of hydrofluoric acid, nitric acid, phosphoric acid, sulfuric acid, and a wetting agent at a temperature below ambient. The method is capable of using one etch step (105) and one etch mask (28) to form a plurality of trenches (12, 13) having the same width (15, 17) but different depths (16, 18) and different orientations. The method can be used to singulate different sizes and configurations of semiconductor dice from the semiconductor substrate (11).
    • 蚀刻半导体衬底(11)的方法包括使半导体衬底(11)变薄(102),提供(103)用于半导体衬底(11)的支撑层(30),提供(104)蚀刻掩模(28) 并且在低于环境温度的温度下使用氢氟酸,硝酸,磷酸,硫酸和润湿剂的蚀刻剂混合物蚀刻(105)半导体衬底(105)。 该方法能够使用一个蚀刻步骤(105)和一个蚀刻掩模(28)形成具有相同宽度(15,17)但不同深度(16,18)和不同取向的多个沟槽(12,13) 。 该方法可用于从半导体衬底(11)中分离出不同尺寸和结构的半导体晶片。