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1. 发明授权

US5306920A Ion implanter with beam resolving apparatus and method for implanting ions 失效
标题翻译：具有光束分离装置的离子注入机和用于注入离子的方法
公开(公告)号：US5306920A
公开(公告)日：1994-04-26
申请号：US980062
申请日：1992-11-23
申请人： Jerry S. King , Carl E. D'Acosta , Craig L. Jasper , Dan A. Banks
发明人： Jerry S. King , Carl E. D'Acosta , Craig L. Jasper , Dan A. Banks
IPC分类号： H01J37/05 , H01J37/09
CPC分类号： H01J37/09 , H01J37/05 , H01J2237/0455 , H01J2237/31701
摘要： An ion implantation apparatus including a resolving aperture-shutter assembly (31) placed in the ion beam path (18). The resolving aperture-shutter assembly includes a movable shutter (34) and a shutter housing surrounding the movable shutter (34). Selected ions in an ion beam path (18) pass through a hole (44) in movable shutter (34) when the movable shutter (34) is in a first position, and are blocked by the solid surfaces when the movable shutter (34) is in a second position. The enclosure (32, 33, 39) completely surrounds the movable shutter (34). The enclosure (32, 33, 39) includes a first aperture (42) aligned with the ion beam path (18) for allowing the selected ions to enter the enclosure and a second aperture (41) aligned with the ion beam path (18) for allowing the selected ions to exit the enclosure after passing through the hole (44) in the movable shutter.
摘要翻译：一种离子注入装置，包括放置在离子束路径（18）中的分辨孔径光阑组件（31）。分辨孔径光阑组件包括活动快门（34）和围绕活动快门（34）的快门壳体。当活动快门（34）处于第一位置时，离子束路径（18）中的选定离子通过活动快门（34）中的孔（44），并且当活动快门（34）被固定时被固体表面阻挡，处于第二位置。外壳（32,33,39）完全包围活动活门（34）。外壳（32,33,39）包括与离子束路径（18）对准的用于允许所选择的离子进入外壳的第一孔（42）和与离子束路径（18）对准的第二孔（41）用于允许所选择的离子在通过可移动快门中的孔（44）之后离开外壳。

2. 发明申请

US20080128901A1 Micro-electro-mechanical systems device and integrated circuit device integrated in a three-dimensional semiconductor structure 审中-公开
标题翻译：微机电系统器件和集成电路器件集成在三维半导体结构中
公开(公告)号：US20080128901A1
公开(公告)日：2008-06-05
申请号：US11606739
申请日：2006-11-30
申请人： Peter Zurcher , Carl E. D'Acosta , Thomas P. Remmel
发明人： Peter Zurcher , Carl E. D'Acosta , Thomas P. Remmel
IPC分类号： H01L23/538 , H01L21/50 , H01L23/64
CPC分类号： B81C1/00238 , H01L23/585 , H01L25/16 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： Semiconductor devices (300, 400, and 500) including an integrated circuit (IC) device (100) coupled to a micro-electro-mechanical systems (MEMS) device (200) and a method (600) for producing same are disclosed. The IC device includes a die seal ring (130) and the MEMS device includes a MEMS seal ring (230), and the IC device is coupled to the MEMS device via the die seal ring and the MEMS seal ring. The MEMS device may include one or more passive devices (450, 475) coupled to it. Moreover, a substrate (510) including an aperture (550) may be coupled to the passive device, wherein the aperture enables the passive device to be trimmed after being disposed on the MEMS device. The semiconductor devices include an RF signal path (486) and at least one other signal path (482 and 484), wherein the other signal path(s) may be an analog and/or a digital signal path.
摘要翻译：公开了包括耦合到微电子机械系统（MEMS）装置（200）的集成电路（IC）装置（100）和用于制造其的方法（600））的半导体装置（300,400和500）。 IC器件包括管芯密封环（130），并且MEMS器件包括MEMS密封环（230），并且IC器件经由管芯密封环和MEMS密封环耦合到MEMS器件。 MEMS器件可以包括耦合到其的一个或多个无源器件（450,475）。此外，包括孔径（550）的衬底（510）可以耦合到无源器件，其中，所述孔径使得能够在被放置在MEMS器件上之后对被动器件进行修整。半导体器件包括RF信号路径（486）和至少一个其它信号路径（482和484），其中另一个信号路径可以是模拟和/或数字信号路径。

3. 发明授权

US09466413B2 Die-to-die inductive communication devices and methods 有权
标题翻译：模 - 模感应通信设备和方法
公开(公告)号：US09466413B2
公开(公告)日：2016-10-11
申请号：US13930236
申请日：2013-06-28
申请人： Fred T. Brauchler , John M. Pigott , Darrel R. Frear , Vivek Gupta , Randall C. Gray , Norman L. Owens , Carl E. D'Acosta
发明人： Fred T. Brauchler , John M. Pigott , Darrel R. Frear , Vivek Gupta , Randall C. Gray , Norman L. Owens , Carl E. D'Acosta
IPC分类号： H01L25/00 , H01L25/065 , H02J5/00 , H01F19/08 , H01L23/522 , H01L23/64 , H01L23/495
CPC分类号： H01F19/08 , H01F2019/085 , H01L23/49575 , H01L23/5227 , H01L23/645 , H01L2224/0401 , H01L2224/04042 , H01L2224/131 , H01L2224/16245 , H01L2224/32145 , H01L2224/48247 , H01L2224/48464 , H01L2224/73215 , H01L2924/13055 , H01L2924/14 , H01L2924/00 , H01L2924/014
摘要： Embodiments of inductive communication devices include first and second galvanically isolated IC die and a dielectric structure. Each IC die has a coil proximate to a first surface of the IC die. The IC die are arranged so that the first surfaces of the IC die face each other, and the first coil and the second coil are aligned across a gap between the first and second IC die. The dielectric structure is positioned within the gap directly between the first and second coils, and a plurality of conductive structures are positioned in or on the dielectric structure and electrically coupled with the second IC die. The conductive structures include portions configured to function as bond pads, and the bond pads may be coupled to package leads using wirebonds. During operation, signals are conveyed between the IC die through inductive coupling between the coils.
摘要翻译：感应通信设备的实施例包括第一和第二电隔离IC芯片和电介质结构。每个IC管芯具有靠近IC管芯的第一表面的线圈。 IC芯片被布置成使得IC管芯的第一表面彼此面对，并且第一线圈和第二线圈跨越第一和第二IC管芯之间的间隙排列。电介质结构直接位于第一和第二线圈之间的间隙内，并且多个导电结构位于电介质结构中或电介质结构上并与第二IC芯片电耦合。导电结构包括被配置为用作接合焊盘的部分，并且接合焊盘可以使用引线键耦合到封装引线。在操作期间，通过线圈之间的感应耦合在IC芯片之间传送信号。

4. 发明申请

US20150004902A1 DIE-TO-DIE INDUCTIVE COMMUNICATION DEVICES AND METHODS 审中-公开
标题翻译： DIE-TO-DIE电感通信设备和方法
公开(公告)号：US20150004902A1
公开(公告)日：2015-01-01
申请号：US13930250
申请日：2013-06-28
申请人： John M. Pigott , Fred T. Brauchler , Darrel R. Frear , Vivek Gupta , Randall C. Gray , Norman L. Owens , Carl E. D'Acosta
发明人： John M. Pigott , Fred T. Brauchler , Darrel R. Frear , Vivek Gupta , Randall C. Gray , Norman L. Owens , Carl E. D'Acosta
IPC分类号： H04B5/00 , H01L49/02
CPC分类号： H04B5/0031 , H01F19/08 , H01L23/3107 , H01L23/48 , H01L23/49575 , H01L23/5227 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/92 , H01L28/10 , H01L2224/0401 , H01L2224/04042 , H01L2224/05553 , H01L2224/0557 , H01L2224/131 , H01L2224/16245 , H01L2224/27334 , H01L2224/29034 , H01L2224/2919 , H01L2224/32013 , H01L2224/32014 , H01L2224/32145 , H01L2224/32245 , H01L2224/33181 , H01L2224/48247 , H01L2224/4826 , H01L2224/48464 , H01L2224/73203 , H01L2224/73215 , H01L2224/73265 , H01L2224/92147 , H01L2224/92247 , H01L2924/00014 , H01L2924/10252 , H01L2924/10253 , H01L2924/10329 , H01L2924/1033 , H01L2924/1305 , H01L2924/13055 , H01L2924/14 , H01L2924/181 , H01L2924/19042 , H01L2924/19104 , H04B5/0093 , H01L2924/00012 , H01L2924/014 , H01L2924/00 , H01L2224/05552 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Embodiments of inductive communication devices include first and second galvanically isolated IC die. The first IC die has a first coil proximate to a first surface of the first IC die, and the second IC die has a second coil proximate to a first surface of the second IC die. The first and second IC die are arranged so that the first surfaces of the first and second IC die face each other, and the first coil and the second coil are aligned across a gap between the first and second IC die. One or more dielectric components are positioned within the gap directly between the first and second coils. During operation, a first signal is provided to the first coil, and the first coil converts the signal into a time-varying magnetic field. The magnetic field couples with the second coil, which produces a corresponding second signal.
摘要翻译：感应通信设备的实施例包括第一和第二电隔离IC芯片。第一IC管芯具有靠近第一IC管芯的第一表面的第一线圈，并且第二IC管芯具有靠近第二IC管芯的第一表面的第二线圈。第一IC芯片和第二IC芯片被布置成使得第一和第二IC芯片的第一表面彼此面对，并且第一线圈和第二线圈跨越第一和第二IC芯片之间的间隙排列。一个或多个电介质部件直接位于第一和第二线圈之间的间隙内。在操作期间，向第一线圈提供第一信号，并且第一线圈将该信号转换成时变磁场。磁场与第二线圈耦合，产生相应的第二信号。

5. 发明申请

US20140167247A1 SEMICONDUCTOR DEVICE PACKAGE HAVING BACKSIDE CONTACT AND METHOD FOR MANUFACTURING 审中-公开
标题翻译：具有背面接触的半导体器件封装和制造方法
公开(公告)号：US20140167247A1
公开(公告)日：2014-06-19
申请号：US14188059
申请日：2014-02-24
申请人： ALAN J. MAGNUS , CARL E. D'ACOSTA , DOUGLAS G. MITCHELL , JUSTIN E. POARCH
发明人： ALAN J. MAGNUS , CARL E. D'ACOSTA , DOUGLAS G. MITCHELL , JUSTIN E. POARCH
IPC分类号： H01L23/36
CPC分类号： H01L23/36 , H01L21/568 , H01L23/3128 , H01L23/3677 , H01L23/4334 , H01L23/5389 , H01L24/19 , H01L24/24 , H01L24/32 , H01L24/96 , H01L2224/0401 , H01L2224/04026 , H01L2224/04105 , H01L2224/12105 , H01L2224/24137 , H01L2224/291 , H01L2224/2929 , H01L2224/293 , H01L2224/32245 , H01L2224/73253 , H01L2224/73267 , H01L2224/83815 , H01L2224/83851 , H01L2224/92244 , H01L2224/96 , H01L2224/97 , H01L2924/12042 , H01L2924/1301 , H01L2924/13034 , H01L2924/181 , H01L2224/83 , H01L2924/014 , H01L2924/00014 , H01L2224/03 , H01L2224/11 , H01L2924/00
摘要： A method and apparatus for forming a backside contact, electrical and/or thermal, for die encapsulated in a semiconductor device package are provided. Die of varying thicknesses can be accommodated within the semiconductor device package. Embodiments of the present invention provide a conductive pedestal coupled to a backside contact of a die, where the coupling is performed prior to encapsulating the die within the package. In addition, conductive pedestals coupled to varying die within a semiconductor device package are of such a thickness that each conductive pedestal can be exposed on the back side of the package without exposing or damaging the backside of any encapsulated die. Embodiments of the present invention provide for the conductive pedestals being made of electrically or thermally conductive material and coupled to the device die contact using an electrically and/or thermally conductive adhesive.
摘要翻译：提供了一种用于形成用于封装在半导体器件封装中的管芯的用于形成用于电和/或热的背面接触的方法和设备。可以在半导体器件封装内容纳不同厚度的管芯。本发明的实施例提供耦合到管芯的背面接触的导电基座，其中在将管芯封装在封装内之前执行耦合。此外，耦合到半导体器件封装内的不同裸片的导电基座具有这样的厚度，使得每个导电基座可以暴露在封装的背面，而不会暴露或损坏任何封装的裸片的背面。本发明的实施例提供了导电基座由导电或导热材料制成并且使用导电和/或导热粘合剂耦合到器件裸片接触。

6. 发明授权

US5851928A Method of etching a semiconductor substrate 失效
标题翻译：蚀刻半导体衬底的方法
公开(公告)号：US5851928A
公开(公告)日：1998-12-22
申请号：US562865
申请日：1995-11-27
申请人： Jerry D. Cripe , Jerry L. White , Carl E. D'Acosta
发明人： Jerry D. Cripe , Jerry L. White , Carl E. D'Acosta
IPC分类号： H01L21/301 , H01L21/306 , H01L21/308 , H01L21/302
CPC分类号： H01L21/30608 , H01L21/3081
摘要： A method of etching a semiconductor substrate (11) includes thinning (102) the semiconductor substrate (11), providing (103) a support layer (30) for the semiconductor substrate (11), providing (104) an etch mask (28) over the semiconductor substrate (11), and etching (105) the semiconductor substrate (11) using an etchant mixture of hydrofluoric acid, nitric acid, phosphoric acid, sulfuric acid, and a wetting agent at a temperature below ambient. The method is capable of using one etch step (105) and one etch mask (28) to form a plurality of trenches (12, 13) having the same width (15, 17) but different depths (16, 18) and different orientations. The method can be used to singulate different sizes and configurations of semiconductor dice from the semiconductor substrate (11).
摘要翻译：蚀刻半导体衬底（11）的方法包括使半导体衬底（11）变薄（102），提供（103）用于半导体衬底（11）的支撑层（30），提供（104）蚀刻掩模（28）并且在低于环境温度的温度下使用氢氟酸，硝酸，磷酸，硫酸和润湿剂的蚀刻剂混合物蚀刻（105）半导体衬底（105）。该方法能够使用一个蚀刻步骤（105）和一个蚀刻掩模（28）形成具有相同宽度（15,17）但不同深度（16,18）和不同取向的多个沟槽（12,13）。该方法可用于从半导体衬底（11）中分离出不同尺寸和结构的半导体晶片。

7. 发明申请

US20150001948A1 DIE-TO-DIE INDUCTIVE COMMUNICATION DEVICES AND METHODS 有权
标题翻译： DIE-TO-DIE电感通信设备和方法
公开(公告)号：US20150001948A1
公开(公告)日：2015-01-01
申请号：US13930236
申请日：2013-06-28
申请人： Fred T. BRAUCHLER , John M. PIGOTT , Darrel R. FREAR , Vivek GUPTA , Randall C. GRAY , Norman L. OWENS , Carl E. D'ACOSTA
发明人： Fred T. BRAUCHLER , John M. PIGOTT , Darrel R. FREAR , Vivek GUPTA , Randall C. GRAY , Norman L. OWENS , Carl E. D'ACOSTA
IPC分类号： H01L25/065 , H02J5/00 , H01L25/00
CPC分类号： H01F19/08 , H01F2019/085 , H01L23/49575 , H01L23/5227 , H01L23/645 , H01L2224/0401 , H01L2224/04042 , H01L2224/131 , H01L2224/16245 , H01L2224/32145 , H01L2224/48247 , H01L2224/48464 , H01L2224/73215 , H01L2924/13055 , H01L2924/14 , H01L2924/00 , H01L2924/014
摘要： Embodiments of inductive communication devices include first and second galvanically isolated IC die and a dielectric structure. Each IC die has a coil proximate to a first surface of the IC die. The IC die are arranged so that the first surfaces of the IC die face each other, and the first coil and the second coil are aligned across a gap between the first and second IC die. The dielectric structure is positioned within the gap directly between the first and second coils, and a plurality of conductive structures are positioned in or on the dielectric structure and electrically coupled with the second IC die. The conductive structures include portions configured to function as bond pads, and the bond pads may be coupled to package leads using wirebonds. During operation, signals are conveyed between the IC die through inductive coupling between the coils.
摘要翻译：感应通信设备的实施例包括第一和第二电隔离IC芯片和电介质结构。每个IC管芯具有靠近IC管芯的第一表面的线圈。 IC芯片被布置成使得IC管芯的第一表面彼此面对，并且第一线圈和第二线圈跨越第一和第二IC管芯之间的间隙排列。电介质结构直接位于第一和第二线圈之间的间隙内，并且多个导电结构位于电介质结构中或电介质结构上并与第二IC芯片电耦合。导电结构包括被配置为用作接合焊盘的部分，并且接合焊盘可以使用引线键耦合到封装引线。在操作期间，通过线圈之间的感应耦合在IC芯片之间传送信号。

8. 发明授权

US07868729B2 Stacked device assembly with integrated coil and method of forming same 有权
标题翻译：具有集成线圈的堆叠器件组件及其形成方法
公开(公告)号：US07868729B2
公开(公告)日：2011-01-11
申请号：US12397112
申请日：2009-03-03
申请人： James Jen-Ho Wang , Carl E. D'Acosta , Justin E. Poarch
发明人： James Jen-Ho Wang , Carl E. D'Acosta , Justin E. Poarch
IPC分类号： H01F5/00
CPC分类号： H01F17/0013 , H01F17/04 , H01F27/2804 , H01F2017/002 , H01F2027/2814 , H01L23/645 , H01L24/11 , H01L24/13 , H01L24/17 , H01L24/81 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2224/05001 , H01L2224/05026 , H01L2224/05124 , H01L2224/05147 , H01L2224/05568 , H01L2224/0557 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2224/1134 , H01L2224/13144 , H01L2224/32145 , H01L2224/73204 , H01L2224/81011 , H01L2224/81012 , H01L2224/81013 , H01L2224/81203 , H01L2224/81801 , H01L2224/97 , H01L2225/06527 , H01L2225/06586 , H01L2924/01013 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/07802 , H01L2924/12044 , H01L2924/14 , H01L2924/1461 , H01L2924/19041 , H01L2924/19042 , H01L2924/19104 , Y10T29/4902 , Y10T29/49117 , H01L2224/81 , H01L2924/00 , H01L2924/00014
摘要： A stacked semiconductor device assembly (20) includes a device (24) having conductive traces (34) formed therein, and conductive interconnects (28) electrically connected to the conductive traces (34). Another device (26) has conductive traces (44) formed therein and device pads (54) formed on an outer surface (52) of the device (26). A method (120) entails attaching (84) a magnetic core (30) to an outer surface (42) of the device (24) and forming (92) the conductive interconnects (28) on the outer surface (42) using a stud bumping technique such that the interconnects (28) surround the magnetic core (30). The conductive interconnects (28) are coupled (126) with the device pads (54) using thermocompression bonding to couple the device (26) with the device (24) to form a continuous device coil (22) wrapped around the magnetic core (30) from an alternating electrical connection of the traces (34), the conductive interconnects (28), and the traces (44).
摘要翻译：层叠的半导体器件组件（20）包括其中形成有导电迹线（34）的器件（24）和电连接到导电迹线（34）的导电互连（28）。另一个装置（26）具有形成在其中的导电迹线（44）和形成在装置（26）的外表面（52）上的装置焊盘（54）。方法（120）需要将磁芯（84）附接到装置（24）的外表面（42）上，并且使用螺柱（92）在外表面（42）上形成（92）导电互连件（28）使得互连（28）围绕磁芯（30）的凸起技术。使用热压接将导电互连（28）与器件焊盘（54）耦合（126），以将器件（26）与器件（24）耦合以形成围绕磁芯（30）缠绕的连续器件线圈（22））从导线（34），导电互连（28）和迹线（44）的交替电连接。

9. 发明申请

US20100225434A1 STACKED DEVICE ASSEMBLY WITH INTEGRATED COIL AND METHOD OF FORMING SAME 有权
标题翻译：具有集成线圈的堆叠设备组装及其形成方法
公开(公告)号：US20100225434A1
公开(公告)日：2010-09-09
申请号：US12397112
申请日：2009-03-03
申请人： James Jen-Ho Wang , Carl E. D'Acosta , Justin E. Poarch
发明人： James Jen-Ho Wang , Carl E. D'Acosta , Justin E. Poarch
IPC分类号： H01F5/00 , H01R43/00
CPC分类号： H01F17/0013 , H01F17/04 , H01F27/2804 , H01F2017/002 , H01F2027/2814 , H01L23/645 , H01L24/11 , H01L24/13 , H01L24/17 , H01L24/81 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2224/05001 , H01L2224/05026 , H01L2224/05124 , H01L2224/05147 , H01L2224/05568 , H01L2224/0557 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2224/1134 , H01L2224/13144 , H01L2224/32145 , H01L2224/73204 , H01L2224/81011 , H01L2224/81012 , H01L2224/81013 , H01L2224/81203 , H01L2224/81801 , H01L2224/97 , H01L2225/06527 , H01L2225/06586 , H01L2924/01013 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/07802 , H01L2924/12044 , H01L2924/14 , H01L2924/1461 , H01L2924/19041 , H01L2924/19042 , H01L2924/19104 , Y10T29/4902 , Y10T29/49117 , H01L2224/81 , H01L2924/00 , H01L2924/00014
摘要： A stacked semiconductor device assembly (20) includes a device (24) having conductive traces (34) formed therein, and conductive interconnects (28) electrically connected to the conductive traces (34). Another device (26) has conductive traces (44) formed therein and device pads (54) formed on an outer surface (52) of the device (26). A method (120) entails attaching (84) a magnetic core (30) to an outer surface (42) of the device (24) and forming (92) the conductive interconnects (28) on the outer surface (42) using a stud bumping technique such that the interconnects (28) surround the magnetic core (30). The conductive interconnects (28) are coupled (126) with the device pads (54) using thermocompression bonding to couple the device (26) with the device (24) to form a continuous device coil (22) wrapped around the magnetic core (30) from an alternating electrical connection of the traces (34), the conductive interconnects (28), and the traces (44).
摘要翻译：层叠的半导体器件组件（20）包括其中形成有导电迹线（34）的器件（24）和电连接到导电迹线（34）的导电互连（28）。另一个装置（26）具有形成在其中的导电迹线（44）和形成在装置（26）的外表面（52）上的装置焊盘（54）。方法（120）需要将磁芯（84）附接到装置（24）的外表面（42）上，并且使用螺柱（92）在外表面（42）上形成（92）导电互连件（28）使得互连（28）围绕磁芯（30）的凸起技术。使用热压接将导电互连（28）与器件焊盘（54）耦合（126），以将器件（26）与器件（24）耦合以形成围绕磁芯（30）缠绕的连续器件线圈（22））从导线（34），导电互连（28）和迹线（44）的交替电连接。

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