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31. 发明授权

US5643394A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5643394A
公开(公告)日：1997-07-01
申请号：US307888
申请日：1994-09-16
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , Brian Shieh , James S. Papanu
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , Brian Shieh , James S. Papanu
IPC分类号： H05H1/46 , C23C16/44 , C23C16/455 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/00
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449
摘要： The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, means for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas feed line from the supply to the opening in the chamber housing, and gas distribution apparatus near the opening in the chamber housing, the gas feed apparatus having at least one slit nozzle facing the interior of the chamber. In a preferred embodiment, the gas distribution apparatus includes a disk member surrounded by at least one annular member with a gap therebetween comprising the slit nozzle, the disk member and annular member blocking gas flow through the opening in the chamber housing. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of ceramic, quartz, sapphire, polyimide or anodized aluminum and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
摘要翻译：本发明体现在一种用于将气体注入等离子体反应器真空室的气体注入装置，其具有腔室壳体，保持要加工的工件的基座，用于将RF能量施加到腔室中的装置，该气体注入装置具有含有气体中的蚀刻剂物质，腔室壳体中的开口，从供体到腔室中的开口的气体供给管线以及靠近腔室壳体中的开口的气体分配装置，气体供给装置具有至少一个狭缝喷嘴面向腔室的内部。在优选实施例中，气体分配装置包括由至少一个环形构件包围的盘构件，其间具有间隙，包括狭缝喷嘴，盘构件和环形构件阻挡气体流过腔室中的开口。优选地，气体分配装置的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。在一个示例中，气体分配装置的每个构件包括陶瓷，石英，蓝宝石，聚酰亚胺或阳极氧化铝之一，气体供给管线包括不锈钢。优选地，每个构件在气体分配装置的组装之前具有其表面抛光。

32. 发明申请

US20120318457A1 MATERIALS AND COATINGS FOR A SHOWERHEAD IN A PROCESSING SYSTEM 审中-公开
标题翻译：加工系统中的淋浴材料和涂层
公开(公告)号：US20120318457A1
公开(公告)日：2012-12-20
申请号：US13525203
申请日：2012-06-15
申请人： Son Nguyen , Donald Olgado , Yuriy Melnik
发明人： Son Nguyen , Donald Olgado , Yuriy Melnik
IPC分类号： B05B1/18 , C23C16/455 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/4404 , C30B25/14 , C30B29/403
摘要： Apparatus and systems are disclosed for providing a protective material for a showerhead of a processing system. In an embodiment, a processing system includes a processing chamber for processing substrates and a showerhead having a diffuser plate for distributing processing gases to the processing chamber. The diffuser plate may include a protective material to protect the showerhead from processing gases. The diffuser plate may be formed with tungsten or tungsten coated with a tantalum alloy and tantalum.
摘要翻译：公开了用于提供用于处理系统的喷头的保护材料的装置和系统。在一个实施例中，处理系统包括用于处理基板的处理室和具有用于将处理气体分配到处理室的扩散板的喷头。漫射板可以包括保护材料以保护喷头免于处理气体。漫射板可以由涂有钽合金和钽的钨或钨形成。

33. 发明申请

US20090017731A1 METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE 审中-公开
标题翻译：用于处理基板的方法和装置
公开(公告)号：US20090017731A1
公开(公告)日：2009-01-15
申请号：US12239730
申请日：2008-09-26
申请人： Gary C. Ettinger , Erik C. Wasinger , Sen-Hou Ko , Wei-Yung Hsu , Liang-Yuh Chen , Ho Seon Shin , Donald Olgado
发明人： Gary C. Ettinger , Erik C. Wasinger , Sen-Hou Ko , Wei-Yung Hsu , Liang-Yuh Chen , Ho Seon Shin , Donald Olgado
IPC分类号： B24B1/00
CPC分类号： B24B9/065 , B24B21/002 , B24B41/002 , H01L21/02021
摘要： Methods and apparatus for cleaning an edge of a substrate are provided. The invention includes a polishing film having a polishing side and a second side; an inflatable pad disposed adjacent the second side of the polishing film; a frame adapted to support the polishing film and the inflatable pad; and a substrate rotation driver adapted to rotate a substrate against the polishing side of the polishing film, wherein the polishing film is disposed between an edge of the substrate and the inflatable pad so that the inflatable pad and polishing film contour to the edge of the substrate with the polishing film contacting the edge of the substrate. Numerous other aspects are provided.
摘要翻译：提供了用于清洁基板边缘的方法和设备。本发明包括具有抛光侧和第二面的抛光膜; 邻近抛光膜的第二侧设置的可充气垫; 适于支撑抛光膜和可充气垫的框架; 以及衬底旋转驱动器，其适于将衬底旋转抵靠所述抛光膜的抛光侧，其中所述抛光膜设置在所述衬底的边缘和所述可充气垫之间，使得所述可充气衬垫和抛光膜轮廓到所述衬底的边缘抛光膜与基板的边缘接触。提供了许多其他方面。

34. 发明申请

US20080011325A1 METHODS AND APPARATUS FOR SUPPORTING A SUBSTRATE IN A HORIZONTAL ORIENTATION DURING CLEANING 审中-公开
标题翻译：在清洗期间支撑水平方向底板的方法和装置
公开(公告)号：US20080011325A1
公开(公告)日：2008-01-17
申请号：US11757850
申请日：2007-06-04
申请人： Donald Olgado , Roy Nangoy , Shesraj Tulshibagwale , Hui Chen , Ho Shin
发明人： Donald Olgado , Roy Nangoy , Shesraj Tulshibagwale , Hui Chen , Ho Shin
IPC分类号： B08B7/04 , A46B13/00 , B24B51/00 , B08B3/10
CPC分类号： H01L21/67046 , B08B1/04 , B08B11/02
摘要： In one or more aspects, an apparatus for cleaning a substrate includes (1) a plurality of rollers adapted to contact and support the substrate in a horizontal orientation, and (2) at least one brush adapted to contact a major surface of the substrate while the substrate is supported by the plurality of rollers to clean the major surface of the substrate. At least one of the plurality of rollers is adapted to move between an opened position allowing the substrate to be loaded onto or unloaded from the plurality of rollers and a closed position in which the substrate is supported by the plurality of rollers. Numerous other aspects are provided.
摘要翻译：在一个或多个方面中，用于清洁基底的装置包括（1）多个辊，其适于以水平取向接触和支撑基底;以及（2）至少一个刷子，其适于接触基底的主表面，同时基板由多个辊支撑以清洁基板的主表面。所述多个辊中的至少一个适于在允许所述基底装载到所述多个辊子上或从所述多个辊子上卸载的打开位置和所述基板被所述多个辊支撑的关闭位置之间移动。提供了许多其他方面。

35. 发明申请

US20070128982A1 Bubble suppressing flow controller with ultrasonic flow meter 有权
标题翻译：超声波流量计气泡抑制流量控制器
公开(公告)号：US20070128982A1
公开(公告)日：2007-06-07
申请号：US11292839
申请日：2005-12-01
申请人： Songjae Lee , Ho Shin , Donald Olgado
发明人： Songjae Lee , Ho Shin , Donald Olgado
IPC分类号： B24B51/00 , B24B29/00 , B24B57/00
CPC分类号： B24B37/04 , B24B57/02
摘要： A method and apparatus for the delivery of slurry solution comprising an ultrasonic flow meter positioned between a fluid preparation manifold and a slurry delivery arm, and a shutoff valve positioned between a proportional valve and the slurry delivery arm. Also, a method and apparatus for the delivery of slurry solution including an ultrasonic flow meter positioned to receive fluid from a fluid preparation manifold, a proportional valve and stepper motor in communication with the flow meter, and a reverse flow restrictor in communication with the proportional valve and a slurry delivery arm.
摘要翻译：一种用于输送浆液的方法和装置，包括位于流体制备歧管和浆料输送臂之间的超声波流量计，以及位于比例阀和浆料输送臂之间的截止阀。另外，一种用于输送浆液的方法和装置，包括：超声波流量计，定位成从流体制备歧管接收流体;与流量计连通的比例阀和步进马达;以及与比例流连通的反向限流器阀和浆料输送臂。

36. 发明申请

US20060246690A1 Electro-chemical deposition system 失效
公开(公告)号：US20060246690A1
公开(公告)日：2006-11-02
申请号：US11476945
申请日：2006-06-27
申请人： Yezdi Dordi , Donald Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Anna Lloyd , Joseph Stevens , Dan Marohl , Ho Shin , Eugene Ravinovich , Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Anna Lloyd , Joseph Stevens , Dan Marohl , Ho Shin , Eugene Ravinovich , Robin Cheung , Ashok Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： H01L21/20 , B05D3/00 , B05C13/00 , B05C13/02
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

37. 发明申请

US20060243304A1 Methods and apparatus for cleaning an edge of a substrate 审中-公开
标题翻译：用于清洁衬底边缘的方法和设备
公开(公告)号：US20060243304A1
公开(公告)日：2006-11-02
申请号：US11411012
申请日：2006-04-24
申请人： Wei-Yung Hsu , Donald Olgado , Ho Shin , Liang-Yuh Chen
发明人： Wei-Yung Hsu , Donald Olgado , Ho Shin , Liang-Yuh Chen
IPC分类号： B08B7/00 , B08B5/04
CPC分类号： H01L21/67046 , B08B1/04 , H01L21/67028
摘要： In one aspect, a method for cleaning an edge of a substrate is provided. The method includes the steps of (a) supporting a substrate on a rotatable substrate support; (b) contacting an edge of the substrate with one or more rollers; (c) rotating the substrate support so as to rotate the substrate; and (d) rotating the one or more rollers so as to clean the edge of the substrate Numerous other aspects are provided.
摘要翻译：一方面，提供一种清洗基板的边缘的方法。该方法包括以下步骤：（a）将基板支撑在可旋转的基板支撑件上; （b）使所述基板的边缘与一个或多个辊接触; （c）旋转衬底支撑件以旋转衬底; 和（d）旋转所述一个或多个辊以便清洁所述基底的边缘。提供许多其它方面。

38. 发明申请

US20050092621A1 Composite pad assembly for electrochemical mechanical processing (ECMP) 审中-公开
标题翻译：电化学机械加工复合垫组件（ECMP）
公开(公告)号：US20050092621A1
公开(公告)日：2005-05-05
申请号：US10980888
申请日：2004-11-03
申请人： Yongqi Hu , Stan Tsai , Feng Liu , Liang-Yuh Chen , Ralph Wadensweiler , Paul Butterfield , Donald Olgado , Martin Wohlert , Sen-Hou Ko , Shou-Sung Chang
发明人： Yongqi Hu , Stan Tsai , Feng Liu , Liang-Yuh Chen , Ralph Wadensweiler , Paul Butterfield , Donald Olgado , Martin Wohlert , Sen-Hou Ko , Shou-Sung Chang
IPC分类号： B23H5/00
CPC分类号： B23H5/06
摘要： Embodiments of a pad assembly for processing a substrate is provided herein. In one embodiment, the pad assembly includes a body that has a non-conductive first surface and an opposing second surface. A conductive element has a planar first surface laterally disposed from the non-conductive first surface and defines a top processing surface therewith. An electrode is coupled to the second surface of the body. A first set of holes is formed through the body and exposes the electrode to the processing surface.
摘要翻译：本文提供了用于处理衬底的焊盘组件的实施例。在一个实施例中，垫组件包括具有非导电的第一表面和相对的第二表面的主体。导电元件具有从非导电的第一表面横向设置的平坦的第一表面，并且与其形成顶部处理表面。电极连接到主体的第二表面。第一组孔穿过主体形成并将电极暴露于处理表面。

39. 发明授权

US06270687B1 RF plasma method 失效
标题翻译：射频等离子体法
公开(公告)号：US06270687B1
公开(公告)日：2001-08-07
申请号：US09564042
申请日：2000-04-27
申请人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Zheyao Yin , Peter Loewenhardt , Jeng Hwang , Steve S. Y. Mak
发明人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Zheyao Yin , Peter Loewenhardt , Jeng Hwang , Steve S. Y. Mak
IPC分类号： B44C122
CPC分类号： H01J37/32477 , H01J37/321
摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.
摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。保护层防止在室内形成的等离子体从室壁溅射材料。蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。线圈天线可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

40. 发明授权

US5885358A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5885358A
公开(公告)日：1999-03-23
申请号：US682803
申请日：1996-07-09
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
IPC分类号： C23C16/44 , C23C16/455 , C23C16/50 , H01J37/32 , H01L21/02 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/321 , C23C16/455 , H01J37/3244
摘要： A gas injection system for injecting gases into a plasma reactor having a vacuum chamber with a sidewall, a pedestal for holding a semiconductor wafer to be processed, and a RF power applicator for applying RF power into the chamber. The gas injection system includes at least one gas supply containing gas, a gas distribution apparatus which has at least one slotted aperture facing the interior of the chamber, and one or more gas feed lines connecting the gas supply or supplies to the gas distribution apparatus. A preferred embodiment of a radial gas distribution apparatus in accordance with the present invention is disposed in the chamber sidewall and includes plural gas distribution nozzles each with a slotted aperture facing an interior of the chamber. Gas feed lines are employed to respectively connect each gas distribution nozzle to separate ones of the gas supplies.
摘要翻译：一种用于将气体注入等离子体反应器的气体注入系统，所述等离子体反应器具有具有侧壁的真空室，用于保持要处理的半导体晶片的基座和用于将RF功率施加到所述室中的RF功率施加器。气体注入系统包括至少一个含气体的气体供给装置，具有面向腔室内部的至少一个开口孔的气体分配装置以及将气体供给或供给部连接到气体分配装置的一个或多个气体供给管线。根据本发明的径向气体分配装置的优选实施例设置在室侧壁中，并且包括多个气体分配喷嘴，每个气体分配喷嘴均具有面向腔室内部的开口孔。采用气体供给管线分别连接每个气体分配喷嘴以分离气体供应源。

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