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1. 发明授权

US5643394A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5643394A
公开(公告)日：1997-07-01
申请号：US307888
申请日：1994-09-16
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , Brian Shieh , James S. Papanu
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , Brian Shieh , James S. Papanu
IPC分类号： H05H1/46 , C23C16/44 , C23C16/455 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/00
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449
摘要： The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, means for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas feed line from the supply to the opening in the chamber housing, and gas distribution apparatus near the opening in the chamber housing, the gas feed apparatus having at least one slit nozzle facing the interior of the chamber. In a preferred embodiment, the gas distribution apparatus includes a disk member surrounded by at least one annular member with a gap therebetween comprising the slit nozzle, the disk member and annular member blocking gas flow through the opening in the chamber housing. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of ceramic, quartz, sapphire, polyimide or anodized aluminum and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
摘要翻译：本发明体现在一种用于将气体注入等离子体反应器真空室的气体注入装置，其具有腔室壳体，保持要加工的工件的基座，用于将RF能量施加到腔室中的装置，该气体注入装置具有含有气体中的蚀刻剂物质，腔室壳体中的开口，从供体到腔室中的开口的气体供给管线以及靠近腔室壳体中的开口的气体分配装置，气体供给装置具有至少一个狭缝喷嘴面向腔室的内部。在优选实施例中，气体分配装置包括由至少一个环形构件包围的盘构件，其间具有间隙，包括狭缝喷嘴，盘构件和环形构件阻挡气体流过腔室中的开口。优选地，气体分配装置的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。在一个示例中，气体分配装置的每个构件包括陶瓷，石英，蓝宝石，聚酰亚胺或阳极氧化铝之一，气体供给管线包括不锈钢。优选地，每个构件在气体分配装置的组装之前具有其表面抛光。

2. 发明授权

US5746875A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5746875A
公开(公告)日：1998-05-05
申请号：US551881
申请日：1995-10-16
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
IPC分类号： H05H1/46 , C23C16/44 , C23C16/455 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/42 , H05H1/00
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449
摘要： The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, a device for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas distribution apparatus disposed within the opening in the chamber housing which has at least one slotted aperture facing the interior of the chamber and a device for controlling the flow rate of gas from the one or more slotted apertures, and a gas feed line from the supply to the gas distribution apparatus. In a preferred embodiment, the gas distribution apparatus includes a center member surrounded by at least one annular member with a gap therebetween comprising the slotted aperture. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of a ceramic, fused quartz, polymeric or anodized aluminum material and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
摘要翻译：本发明体现在一种用于将气体注入等离子体反应器真空室中的气体注入装置，其具有腔室壳体，保持要加工的工件的基座，用于将RF能量施加到腔室中的装置，该气体注入装置具有气体供应在气体中含有蚀刻剂物质，在腔室中的开口，设置在腔室中的开口内的气体分配装置，其具有面向腔室内部的至少一个开口孔，以及用于控制气体流速的装置从一个或多个开槽孔，以及从供给到气体分配装置的气体供给管线。在优选实施例中，气体分配装置包括由至少一个环形构件包围的中心构件，其间具有间隙，包括开槽孔。优选地，气体分配装置的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。在一个示例中，气体分配装置的每个构件包括陶瓷，熔融石英，聚合物或阳极氧化铝材料中的一种，气体供给管线包括不锈钢。优选地，每个构件在气体分配装置的组装之前具有其表面抛光。

3. 发明授权

US5885358A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5885358A
公开(公告)日：1999-03-23
申请号：US682803
申请日：1996-07-09
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
IPC分类号： C23C16/44 , C23C16/455 , C23C16/50 , H01J37/32 , H01L21/02 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/321 , C23C16/455 , H01J37/3244
摘要： A gas injection system for injecting gases into a plasma reactor having a vacuum chamber with a sidewall, a pedestal for holding a semiconductor wafer to be processed, and a RF power applicator for applying RF power into the chamber. The gas injection system includes at least one gas supply containing gas, a gas distribution apparatus which has at least one slotted aperture facing the interior of the chamber, and one or more gas feed lines connecting the gas supply or supplies to the gas distribution apparatus. A preferred embodiment of a radial gas distribution apparatus in accordance with the present invention is disposed in the chamber sidewall and includes plural gas distribution nozzles each with a slotted aperture facing an interior of the chamber. Gas feed lines are employed to respectively connect each gas distribution nozzle to separate ones of the gas supplies.
摘要翻译：一种用于将气体注入等离子体反应器的气体注入系统，所述等离子体反应器具有具有侧壁的真空室，用于保持要处理的半导体晶片的基座和用于将RF功率施加到所述室中的RF功率施加器。气体注入系统包括至少一个含气体的气体供给装置，具有面向腔室内部的至少一个开口孔的气体分配装置以及将气体供给或供给部连接到气体分配装置的一个或多个气体供给管线。根据本发明的径向气体分配装置的优选实施例设置在室侧壁中，并且包括多个气体分配喷嘴，每个气体分配喷嘴均具有面向腔室内部的开口孔。采用气体供给管线分别连接每个气体分配喷嘴以分离气体供应源。

4. 发明授权

US06270687B1 RF plasma method 失效
标题翻译：射频等离子体法
公开(公告)号：US06270687B1
公开(公告)日：2001-08-07
申请号：US09564042
申请日：2000-04-27
申请人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Zheyao Yin , Peter Loewenhardt , Jeng Hwang , Steve S. Y. Mak
发明人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Zheyao Yin , Peter Loewenhardt , Jeng Hwang , Steve S. Y. Mak
IPC分类号： B44C122
CPC分类号： H01J37/32477 , H01J37/321
摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.
摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。保护层防止在室内形成的等离子体从室壁溅射材料。蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。线圈天线可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

5. 发明授权

US5817534A RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers 失效
标题翻译： RF等离子体反应器，其具有用于在半导体晶片的处理期间进行清洁的清洁电极
公开(公告)号：US5817534A
公开(公告)日：1998-10-06
申请号：US567376
申请日：1995-12-04
申请人： Yan Ye , Hiroji Hanawa , Diana Xiaobing Ma , Gerald Zheyao Yin , Peter Loewenhardt , Donald Olgado , James Papanu , Steven S.Y. Mak
发明人： Yan Ye , Hiroji Hanawa , Diana Xiaobing Ma , Gerald Zheyao Yin , Peter Loewenhardt , Donald Olgado , James Papanu , Steven S.Y. Mak
IPC分类号： H05H1/46 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/304 , H01L21/3065 , H05H1/00
CPC分类号： H01L21/67028 , H01J37/32862 , Y10S438/905
摘要： The invention is carried out in a plasma reactor for processing a semiconductor wafer, the plasma reactor having a chamber for containing a processing gas and having a conductor connected to an RF power source for coupling RF power into the reactor chamber to generate from the processing gas a plasma inside the chamber, the chamber containing at least one surface exposed toward the plasma and susceptible to contamination by particles produced during processing of the wafer, the invention being carried out by promoting, during processing of the wafer, bombarding of particles from the plasma onto the one surface to remove therefrom contaminants deposited during processing of the wafer. Such promoting of bombarding is carried out by providing an RF power supply and coupling, during processing of the wafer, RF power from the supply to the one surface. The coupling may be performed by a capacitive cleaning electrode adjacent the one surface, the capacitive cleaning electrode connected to the RF power supply. The capacitive cleaning electrode preferably is disposed on a side of the one surface opposite the plasma so as to be protected from contact with the plasma. Alternatively, the coupling may be carried out by a direct electrical connection from the RF power supply to the one surface.
摘要翻译：本发明在用于处理半导体晶片的等离子体反应器中进行，等离子体反应器具有用于容纳处理气体的室，并具有连接到RF电源的导体，用于将RF功率耦合到反应器室中以从处理气体产生腔室内的等离子体，该腔室包含至少一个暴露于等离子体的表面并容易受到在晶片加工期间产生的颗粒的污染，本发明通过在晶片加工期间促进从等离子体中轰击颗粒而进行在一个表面上去除在晶片加工期间沉积的污染物。通过在晶片的处理期间提供RF电源和耦合来进行轰击的这种促进是从电源到单个表面的RF功率。耦合可以通过与一个表面相邻的电容清洁电极，电容清洁电极连接到RF电源来进行。电容式清洁电极优选地设置在与等离子体相对的一个表面的一侧，以便被保护而不与等离子体接触。或者，耦合可以通过从RF电源到一个表面的直接电连接来执行。

6. 发明授权

US5883017A Compartmentalized substrate processing chamber 失效
标题翻译：隔板基板处理室
公开(公告)号：US5883017A
公开(公告)日：1999-03-16
申请号：US916161
申请日：1997-09-02
申请人： Avi Tepman , Gerald Zheyao Yin , Donald Olgado
发明人： Avi Tepman , Gerald Zheyao Yin , Donald Olgado
IPC分类号： H01L21/302 , B65G49/07 , H01L21/00 , H01L21/02 , H01L21/20 , H01L21/306 , H01L21/677
CPC分类号： H01L21/67748 , H01L21/6719 , H01L21/67196 , H01L21/67751 , Y10S414/135 , Y10S414/139 , Y10S438/905 , Y10S438/907 , Y10S438/908
摘要： A process chamber for semiconductor wafers is formed of multiple compartments. A first compartment is provided for supplying an isolated environment for processing the wafers, and a second compartment is provided, in selective communication with the first compartment, to load and unload wafers from the chamber. The wafer handling equipment is located in the second compartment to isolate it from the process environment, and thus form a clean, non-contaminating, environment for the wafer handling equipment. When the chamber must be cleaned, only the first compartment must be cleaned, as no processing occurs in the second chamber. Therefore, the entire first chamber may be removed for cleaning, and replaced with a clean first compartment to decrease chamber turnaround time during chamber cleaning operations.
摘要翻译：用于半导体晶片的处理室由多个隔室形成。提供第一隔室以提供用于处理晶片的隔离环境，并且提供与第一隔室选择性连通的第二隔室，用于从腔室加载和卸载晶片。晶片处理设备位于第二隔室中以将其与工艺环境隔离，并因此形成用于晶片处理设备的干净，无污染的环境。当房间必须清洁时，只有第一个隔间必须被清洁，因为在第二个室中没有处理。因此，可以将整个第一腔室移除以进行清洁，并且用清洁的第一隔室替换以减少室清洁操作期间的室周转时间。

7. 发明授权

US5730801A Compartnetalized substrate processing chamber 失效
标题翻译：基板处理室
公开(公告)号：US5730801A
公开(公告)日：1998-03-24
申请号：US296043
申请日：1994-08-23
申请人： Avi Tepman , Gerald Zheyao Yin , Donald Olgado
发明人： Avi Tepman , Gerald Zheyao Yin , Donald Olgado
IPC分类号： H01L21/302 , B65G49/07 , H01L21/00 , H01L21/02 , H01L21/20 , H01L21/306 , H01L21/677 , C23C16/00
CPC分类号： H01L21/67748 , H01L21/6719 , H01L21/67196 , H01L21/67751 , Y10S414/135 , Y10S414/139 , Y10S438/905 , Y10S438/907 , Y10S438/908
摘要： A process chamber for semiconductor wafers is formed of multiple compartments. A first compartment is provided for supplying an isolated environment for processing the wafers, and a second compartment is provided, in selective communication with the first compartment, to load and unload wafers from the chamber. The wafer handling equipment is located in the second compartment to isolate it from the process environment, and thus form a clean, non-contaminating, environment for the wafer handling equipment. When the chamber must be cleaned, only the first compartment must be cleaned, as no processing occurs in the second chamber. Therefore, the entire first chamber may be removed for cleaning, and replaced with a clean first compartment to decrease chamber turnaround time during chamber cleaning operations.
摘要翻译：用于半导体晶片的处理室由多个隔室形成。提供第一隔室以提供用于处理晶片的隔离环境，并且提供与第一隔室选择性连通的第二隔室，用于从腔室加载和卸载晶片。晶片处理设备位于第二隔室中以将其与工艺环境隔离，并因此形成用于晶片处理设备的干净，无污染的环境。当房间必须清洁时，只有第一个隔间必须被清洁，因为在第二个室中没有处理。因此，可以将整个第一腔室移除以进行清洁，并且用清洁的第一隔室替换以减少室清洁操作期间的室周转时间。

8. 发明申请

US20130068320A1 PROTECTIVE MATERIAL FOR GAS DELIVERY IN A PROCESSING SYSTEM 审中-公开
标题翻译：用于加工系统中气体输送的保护材料
公开(公告)号：US20130068320A1
公开(公告)日：2013-03-21
申请号：US13525200
申请日：2012-06-15
申请人： Son Nguyen , Donald Olgado
发明人： Son Nguyen , Donald Olgado
IPC分类号： F16L53/00
CPC分类号： F16L53/00 , C23C16/4404 , C23C16/4481 , C23C16/45502 , C23C16/45565 , C30B25/14 , C30B29/403 , Y10T137/6416
摘要： Apparatus and systems are disclosed for providing a protective material for a gas-delivery system of a processing system. In an embodiment, a processing system includes a processing chamber for processing substrates and a gas-delivery system for delivering processing gases to the processing chamber. The gas-delivery system includes a protective material to protect the gas-delivery system from processing gases including at least one processing gas heated to an elevated temperature. The protective material includes a tungsten plate or a tungsten plate coated with a tantalum alloy and tantalum
摘要翻译：公开了用于为处理系统的气体输送系统提供保护材料的装置和系统。在一个实施例中，处理系统包括用于处理基板的处理室和用于将处理气体输送到处理室的气体输送系统。气体输送系统包括保护气体输送系统免受处理气体（包括加热到高温的至少一种处理气体）的保护材料。保护材料包括涂有钽合金和钽的钨板或钨板

9. 发明申请

US20090036033A1 METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE 审中-公开
标题翻译：用于处理基板的方法和装置
公开(公告)号：US20090036033A1
公开(公告)日：2009-02-05
申请号：US12245765
申请日：2008-10-05
申请人： Erik C. Wasinger , Gary C. Ettinger , Sen-Hou Ko , Wei-Yung Hsu , Liang-Yuh Chen , Ho Seon Shin , Donald Olgado
发明人： Erik C. Wasinger , Gary C. Ettinger , Sen-Hou Ko , Wei-Yung Hsu , Liang-Yuh Chen , Ho Seon Shin , Donald Olgado
IPC分类号： B24B1/04 , B24B9/00
CPC分类号： C03C19/00 , B24B1/04 , B24B9/065 , B24B21/004 , H01L21/02021
摘要： A method of cleaning an edge of a substrate is provided. The method comprises tensioning a first polishing film in a frame; contacting the first polishing film against an edge of a substrate; conforming the first polishing film to the edge of the substrate, the edge including an outer edge and at least one bevel; and rotating the substrate while the first polishing film remains in contact with the substrate. Numerous other aspects are provided.
摘要翻译：提供了清洁基板的边缘的方法。该方法包括在框架中张紧第一抛光膜; 使所述第一抛光膜与衬底的边缘接触; 使所述第一抛光膜与所述基板的边缘一致，所述边缘包括外边缘和至少一个斜面; 并且在第一研磨膜与基板保持接触的同时旋转基板。提供了许多其他方面。

10. 发明申请

US20070238393A1 METHODS AND APPARATUS FOR POLISHING AN EDGE OF A SUBSTRATE 审中-公开
标题翻译：用于抛光衬底边缘的方法和装置
公开(公告)号：US20070238393A1
公开(公告)日：2007-10-11
申请号：US11693695
申请日：2007-03-29
申请人： Ho Shin , Gary Ettinger , Donald Olgado , Erik Wasinger , Sen-Hou Ko , Charles Dodds , Yufei Chen , Wei-Yung Hsu
发明人： Ho Shin , Gary Ettinger , Donald Olgado , Erik Wasinger , Sen-Hou Ko , Charles Dodds , Yufei Chen , Wei-Yung Hsu
IPC分类号： B24B51/00 , B24B49/00 , B24B7/30
CPC分类号： B24B9/065 , B24B21/002 , B24B41/067 , B24B49/16 , B24B57/02
摘要： Methods of and systems for polishing an edge of a substrate are provided. The invention includes rotating a substrate against a polishing film so as to remove material from the edge of the substrate; and detecting an amount of one of energy and torque exerted in rotating the substrate against the polishing film. The invention may further include determining an amount of material removed from the edge of the substrate based on the detected energy or torque exerted in rotating the substrate against the polishing film; ascertaining a difference between the determined amount of material removed and a preset polish level; and determining an amount of energy or torque to be exerted in rotating the substrate adapted to attain the preset polish level based on the difference between the determined amount of material removed and the preset polish level. Numerous other aspects are provided.
摘要翻译：提供了抛光衬底边缘的方法和系统。本发明包括将衬底旋转抵靠抛光膜，以便从衬底的边缘去除材料; 并且检测在将衬底旋转抛光膜时施加的能量和扭矩中的一个的量。本发明还可以包括基于在将衬底旋转抛光膜时所检测到的能量或扭矩确定从衬底边缘去除的材料量; 确定确定的去除材料量与预设抛光水平之间的差异; 以及基于所确定的所移除的材料量与所述预设的抛光水平之间的差来确定在旋转所述基板时施加的能量或扭矩的量，所述能量或扭矩适于实现预设的抛光水平。提供了许多其他方面。

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