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1. 发明专利

JP2012204683A Magnetic resistance element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆
公开(公告)号：JP2012204683A
公开(公告)日：2012-10-22
申请号：JP2011068868
申请日：2011-03-25
申请人： Toshiba Corp , Tohoku University Wpi Advanced Institute For Materials Research , National Institute Of Advanced Industrial & Technology , 国立大学法人東北大学原子分子材料科学高等研究機構 , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： DAIBO TADAOMI , ITO JUNICHI , KAI TADASHI , AMANO MINORU , YODA HIROAKI , MIYAZAKI TERUNOBU , MIZUKAMI NARUMI , KUBOTA TAKAHIDE , YAKUSHIJI KEI , YUASA SHINJI , KUBOTA HITOSHI , FUKUSHIMA AKIO , NAGAHAMA TARO , ANDO KOJI
IPC分类号： H01L27/105 , H01F10/32 , H01L21/8246 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/10 , H01L23/528 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a magnetic resistance element having a perpendicular magnetic anisotropy and in which a larger magnetoresistance can be achieved, and a magnetic memory thereof.SOLUTION: The magnetic resistance element comprises: an under layer; a first magnetic layer that is formed on the under layer, and has a magnetic film having a magnetization easy axis perpendicular to the film plane, and represented by MnGa(45≤x
摘要翻译：要解决的问题：提供具有垂直磁各向异性并且可以实现更大磁阻的磁阻元件及其磁存储器。解决方案：磁阻元件包括：下层; 形成在下层上的第一磁性层，具有磁化容易轴垂直于膜平面的磁性膜，由Mn ＆lt; SB＆lt; SB POS = “POST”> 100-x （45≤x<64atm％）; 形成在第一磁性层上的第一非磁性层; 以及形成在所述第一非磁性层上的第二磁性层，并且具有磁化容易轴垂直于所述膜平面的磁性膜，并且由Mn ”Ga 100-y （45≤x<64atm％）。第一和第二磁性层中的Mn的组成比不同。通过在第一和第二磁性层之间通过第一非磁性层馈送的电流来改变第一磁性层的磁化方向。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012064903A Magnetoresistance effect element, magnetic memory and method of manufacturing magnetoresistance effect element 有权
标题翻译：磁阻效应元件，磁记忆和制造磁阻效应元件的方法
公开(公告)号：JP2012064903A
公开(公告)日：2012-03-29
申请号：JP2010210180
申请日：2010-09-17
申请人： National Institute Of Advanced Industrial & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： KITAGAWA EIJI , DAIBO TATATOMI , HASHIMOTO YUTAKA , TOKO MASARU , KAI TADASHI , NAGAMINE MAKOTO , NAGASE TOSHIHIKO , NISHIYAMA KATSUYA , UEDA KOJI , YODA HIROAKI , YAKUSHIJI KEI , YUASA SHINJI , KUBOTA HITOSHI , NAGAHAMA TARO , FUKUSHIMA AKIO , ANDO KOJI
IPC分类号： H01L27/105 , H01F10/14 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L43/08
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/161 , H01F10/133 , H01F10/3286 , H01F41/307 , H01L27/228 , H01L29/82 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To improve the device characteristics of a magnetoresistance effect element.SOLUTION: The magnetoresistance effect element includes a second magnetic layer 92 having magnetic anisotropy in the direction perpendicular to the film surface and an invariable orientation of magnetization, a first magnetic layer 91 having magnetic anisotropy in the direction perpendicular to the film surface and a variable orientation of magnetization, and a nonmagnetic layer 93 provided between the first and second magnetic layers 91, 92. The first magnetic layer 91 has a magnetization film 21 containing at least one element selected from a first group consisting of Tb, Gd and Dy, and at least one element selected from a second group consisting of Co and Fe. The magnetization film 21 contains an amorphous phase 29 and a crystal 28 having a particle size of 1 nm or less.
摘要翻译：要解决的问题：提高磁阻效应元件的器件特性。解决方案：磁阻效应元件包括在垂直于膜表面的方向上具有磁各向异性的第二磁性层92和磁化的不变取向，在垂直于膜表面的方向上具有磁各向异性的第一磁性层91和磁化的可变取向以及设置在第一和第二磁性层91,92之间的非磁性层93.第一磁性层91具有包含至少一种选自Tb，Gd和Dy的元素的磁化膜21 ，以及选自Co和Fe组成的第二组中的至少一种元素。磁化膜21包含非晶相29和粒径为1nm以下的晶体28。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2012064774A Magnetic resistance element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆
公开(公告)号：JP2012064774A
公开(公告)日：2012-03-29
申请号：JP2010208042
申请日：2010-09-16
申请人： National Institute Of Advanced Industrial & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： NAGASE TOSHIHIKO , KAI TADASHI , NAGAMINE MAKOTO , NISHIYAMA KATSUYA , KITAGAWA EIJI , DAIBO TADAOMI , UEDA KOJI , YODA HIROAKI , YAKUSHIJI KEI , YUASA SHINJI , KUBOTA HITOSHI , NAGAHAMA TARO , FUKUSHIMA AKIO , ANDO KOJI
IPC分类号： H01L27/105 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a spin-implantation writing magnetic resistance element, which is thermally stable and which can be reversed in magnetization with a low current.SOLUTION: A magnetic resistance element according to an embodiment comprises: a first magnetic layer having an axis of easy magnetization in a film surface perpendicular direction; a second magnetic layer having an axis of easy magnetization in a film surface perpendicular direction; and a non-magnetic layer provided between the first and second magnetic layers. At least one of the first and second magnetic layers has a structure in which a first magnetic film and a second magnetic film provided on the non-magnetic layer side are stacked. The second magnetic film has a structure in which a magnetic material layer and a non-magnetic material layer are stacked on each other repeatedly for at least two cycles. The non-magnetic material layer of the second magnetic film contains at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V and Cr. The direction magnetization of one of the first and second magnetic layers can be made variable by forcing electric current to flow between the first and second magnetic layers through the non-magnetic layer.
摘要翻译：要解决的问题：提供一种热稳定的自旋注入写入磁阻元件，并且可以以低电流在磁化中反转。解决方案：根据实施例的磁阻元件包括：在膜表面垂直方向上具有容易磁化的轴的第一磁性层; 在膜表面垂直方向具有易磁化轴的第二磁性层; 以及设置在第一和第二磁性层之间的非磁性层。第一和第二磁性层中的至少一个具有其中堆叠设置在非磁性层侧的第一磁性膜和第二磁性膜的结构。第二磁性膜具有其中磁性材料层和非磁性材料层重复堆叠至少两个循环的结构。第二磁性膜的非磁性材料层含有选自Ta，W，Hf，Zr，Nb，Mo，Ti，V和Cr中的至少一种元素。可以通过迫使电流通过非磁性层在第一和第二磁性层之间流动来使得第一和第二磁性层之一的方向磁化可变。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2009099628A Magneto-resistance effect element, and magnetic random access memory 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：JP2009099628A
公开(公告)日：2009-05-07
申请号：JP2007267238
申请日：2007-10-12
申请人： National Institute Of Advanced Industrial & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： NAKAYAMA MASAHIKO , YAKUSHIJI HIROSHI , IKEGAWA SUMIO , YUASA SHINJI , KAI TADASHI , NAGASE TOSHIHIKO , AMANO MINORU , AIKAWA HISANORI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01F10/123 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magneto-resistance effect element which is improved in resistance to thermal disturbance and can be stopped from entering an intermediate value state, and to provide a magnetic random access memory. SOLUTION: The magneto-resistance effect element has a fixed layer 11 which is made of a magnetic material and has first magnetism directed at right angles to a film surface, a recording layer 13 which is made of a magnetic material and has second magnetism directed at right angles to the film surface and can invert the direction of the second magnetism, and a nonmagnetic layer 12 provided between the fixed layer 11 and recording layer 13. A critical diameter (uniaxial critical diameter Ds*) which is determined by magnetic anisotropy, saturated magnetism, and exchange-coupling of the recording layer 13 and with which a single-magnetic-domain state is the only one stable state, or a critical diameter (uniaxial inversion critical diameter Ds) with which the single-magnetic-domain state is the only one stable state and inversion is caused in an inversion process while the single-magnetic-domain state is maintained is larger than the element diameter of the magneto-resistance effect element. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种耐热扰动性提高并且可以停止进入中间值状态的磁阻效应元件，并提供磁性随机存取存储器。解决方案：磁阻效应元件具有由磁性材料制成并且具有与膜表面成直角的第一磁性的固定层11，由磁性材料制成并具有第二磁性材料的记录层13 具有与膜表面成直角的磁性并且可以反转第二磁性的方向，以及设置在固定层11和记录层13之间的非磁性层12.由磁性材料确定的临界直径（单轴临界直径Ds *）记录层13的各向异性，饱和磁性和交换耦合，单磁畴状态是唯一的一个稳定状态，或临界直径（单轴反转临界直径Ds），单磁畴状态是唯一的稳定状态，并且在反转过程中引起反转，同时保持单磁畴状态大于磁阻效应元件的元件直径 ent。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2011071352A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2011071352A
公开(公告)日：2011-04-07
申请号：JP2009221569
申请日：2009-09-25
申请人： National Institute Of Advanced Industrial Science & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： KAI TADASHI , NISHIYAMA KATSUYA , NAGASE TOSHIHIKO , YOSHIKAWA MASAHISA , KITAGAWA EIJI , DAIBO TATATOMI , NAGAMINE MAKOTO , NAKAYAMA MASAHIKO , SHIMOMURA NAOHARU , YODA HIROAKI , YAKUSHIJI HIROSHI , YUASA SHINJI , KUBOTA HITOSHI , NAGAHAMA TARO , FUKUSHIMA AKIO , ANDO KOJI
IPC分类号： H01L43/08 , G11C11/15 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： PROBLEM TO BE SOLVED: To provide a spin-transfer-torque writing type magnetoresistive element with thermal stability and low current consumption. SOLUTION: The magnetoresistive element includes a first magnetic layer 3 which has an easy axis of magnetization in a direction vertical to a film surface and has variable magnetization direction, a second magnetic layer 2 which has an easy axis of magnetization in the direction vertical to the film surface, and a first nonmagnetic layer 4 provided between the first magnetic layer 3 and second magnetic layer 2. The first magnetic layer 3 is made of a ferromagnetic material which includes a CoPd alloy or CoPt alloy having Co and Pd or Co and Pt laminated alternately on an atomically close-packed plane thereof, and has a (c) axis in the direction vertical to the film surface. The magnetization direction of the first magnetic layer 3 varies with a bidirectional current penetrating the first magnetic layer 3, first nonmagnetic layer 4 and second magnetic layer 2. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有热稳定性和低电流消耗的自旋转矩扭矩书写型磁阻元件。解决方案：磁阻元件包括第一磁性层3，其在垂直于膜表面的方向上具有易磁化轴并且具有可变的磁化方向;第二磁性层2，其在方向上具有易磁化轴设置在第一磁性层3和第二磁性层2之间的第一非磁性层4.第一磁性层3由包含Co和Pd或Co的CoPd合金或CoPt合金的铁磁材料制成并且Pt在其原子紧密堆积的平面上交替层压，并且在垂直于膜表面的方向上具有（c）轴。第一磁性层3的磁化方向随着穿过第一磁性层3，第一非磁性层4和第二磁性层2的双向电流而变化。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2013251336A Magnetic storage element and manufacturing method of magnetic memory 审中-公开
标题翻译：磁记忆的磁性储存元件和制造方法
公开(公告)号：JP2013251336A
公开(公告)日：2013-12-12
申请号：JP2012123440
申请日：2012-05-30
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAYAMA MASAHIKO , AIKAWA HISANORI , TOKO MASARU , YODA HIROAKI , KISHI TATSUYA , IKEGAWA SUMIO
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/02 , H01L43/08 , H01L43/10
CPC分类号： H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To maintain the magnetization state of a magnetic storage element even when the magnetic storage element underwent a reflow process.SOLUTION: A magnetic storage element 20 includes: a storage layer 30; a first non-magnetic layer 31 provided adjacent to the storage layer 30; a reference layer 32 provided adjacent to the first non-magnetic layer 31 and including a ferrimagnetic material; a second non-magnetic layer 33 provided adjacent to the reference layer 32; and an adjustment layer 34 provided adjacent to the second non-magnetic layer 33. A manufacturing method of a magnetic memory 11 including the magnetic storage element 20 includes the steps of: packaging the magnetic memory 11 and forming a memory package 10; and joining the memory package 10 to a substrate 18 by reflow soldering. A reflow temperature in the reflow process is set to a temperature that is equal to or higher than a compensation temperature of the reference layer 32 and is equal to or lower than Neel temperature.
摘要翻译：要解决的问题：即使当磁存储元件经受回流处理时，也能保持磁存储元件的磁化状态。解决方案：磁存储元件20包括：存储层30; 与存储层30相邻设置的第一非磁性层31; 设置在第一非磁性层31附近并包括铁磁材料的参考层32; 与参考层32相邻设置的第二非磁性层33; 以及与第二非磁性层33相邻设置的调整层34.包括磁性存储元件20的磁性存储器11的制造方法包括以下步骤：包装磁性存储器11并形成存储器组件10; 并通过回流焊接将存储器封装10连接到衬底18。回流处理中的回流温度设定为等于或高于参考层32的补偿温度并且等于或低于Neel温度的温度。

7. 发明专利

JP2013053324A Sputtering target and method of manufacturing magnetic memory using the same 有权
标题翻译：溅射目标和使用其制造磁记忆的方法
公开(公告)号：JP2013053324A
公开(公告)日：2013-03-21
申请号：JP2011190868
申请日：2011-09-01
申请人： Toshiba Corp , 株式会社東芝 , Ube Material Industries Ltd , 宇部マテリアルズ株式会社
发明人： KITAGAWA EIJI , DAIBO TATATOMI , NOMA KENJI , KAI TADASHI , YAMAKAWA KOJI , NAGASE TOSHIHIKO , NISHIYAMA KATSUYA , UEDA KOJI , WATANABE DAISUKE , YODA HIROAKI , SANO SATOSHI , NISHIMURA YOSHIHIRO , WATANABE TAKAYUKI , KATO YUZO , UEKI AKIRA
IPC分类号： C23C14/34 , C04B35/053 , C23C14/08 , H01L21/8246 , H01L27/105 , H01L43/10 , H01L43/12
CPC分类号： C23C14/082 , C23C14/3414 , G11C11/161 , H01L27/228 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target that can improve an MR ratio of a magnet tunnel junction element, and to provide a method of manufacturing a magnetic memory using the same.SOLUTION: There are provided the sputtering target including a target body 10 that has MgO as a main component and a thickness of 3 mm or smaller, and also the method of manufacturing a magnetic memory using the sputtering target which can improve an MR ratio.
摘要翻译：要解决的问题：提供能够提高磁体隧道结元件的MR比的溅射靶，并提供使用该溅射靶的磁性存储器的制造方法。解决方案：提供了包括具有MgO作为主要成分并且厚度为3mm以下的靶体10的溅射靶，以及使用能够改善MR的溅射靶的磁性存储器的制造方法比。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2013016560A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2013016560A
公开(公告)日：2013-01-24
申请号：JP2011146718
申请日：2011-06-30
申请人： Toshiba Corp , 株式会社東芝
发明人： NISHIYAMA KATSUYA , AIKAWA HISANORI , KAI TADASHI , NAGASE TOSHIHIKO , UEDA KOJI , YODA HIROAKI
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To cancel a leaked magnetic field which increases as a magnetoresistive element makes microfabricated.SOLUTION: A magnetoresistive element according to an embodiment comprises: a storage layer 2, magnetization of which is vertical and variable; a reference layer 4, magnetization of which is vertical and invariant; a shift adjustment layer 6, magnetization of which is vertical, invariant, and reverse to the magnetization of the reference layer 3; a first non-magnetic layer 3 provided between the storage layer 2 and the reference layer 4; and a second non-magnetic layer 5 provided between the reference layer 4 and the shift adjustment layer 6. A reverse magnetic field of the reference layer 4 is equal to or smaller than a reverse magnetic field of the storage layer 2. A magnetic relaxation constant of the reference layer 4 is bigger than a magnetic relaxation constant of the storage layer 2.
摘要翻译：要解决的问题：消除随着磁阻元件微制造而增加的泄漏磁场。解决方案：根据实施例的磁阻元件包括：存储层2，其磁化是垂直的和可变的; 参考层4，其磁化是垂直和不变的; 移位调整层6，其磁化是垂直的，不变的，并且与参考层3的磁化相反; 设置在存储层2和参考层4之间的第一非磁性层3; 以及设置在参考层4和移位调整层6之间的第二非磁性层5.参考层4的反向磁场等于或小于存储层2的反向磁场。磁性弛豫常数参考层4的厚度大于存储层2的磁性松弛常数。版权所有：（C）2013，JPO＆INPIT

9. 发明专利

JP2012094894A Magnetoresistance effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁记忆
公开(公告)号：JP2012094894A
公开(公告)日：2012-05-17
申请号：JP2011286353
申请日：2011-12-27
申请人： Toshiba Corp , 株式会社東芝
发明人： OSEGI JUNICHI , SHIMOMURA NAOHARU , IKEGAWA SUMIO , KAI TADASHI , NAKAYAMA MASAHIKO , AIKAWA HISANORI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To reduce a leakage field applied to a memory layer as much as possible.SOLUTION: A magnetoresistance effect element comprises a ferromagnetic layer 10 having magnetic anisotropy in the direction perpendicular to the film surface, a first nonmagnetic layer 8 provided on the ferromagnetic layer, a reference layer 6 provided on the first nonmagnetic layer and having magnetic anisotropy in the direction perpendicular to the film surface, magnetization anti-parallel with the direction of magnetization of the ferromagnetic layer and a film thickness equal to 1/2.8-1/1.5 that of the ferromagnetic layer in the lamination direction, a second nonmagnetic layer 8 provided on the reference layer, and a memory layer 2 provided on the second nonmagnetic layer and having magnetic anisotropy in the direction perpendicular to the film surface, and direction of magnetization which changes by action of spin-polarized electrons.
摘要翻译：要解决的问题：尽可能减少施加到存储器层的泄漏场。解决方案：磁阻效应元件包括在垂直于膜表面的方向上具有磁各向异性的铁磁层10，设置在铁磁层上的第一非磁性层8，设置在第一非磁性层上并具有磁性的参考层6 在垂直于膜表面的方向上的各向异性，与铁磁层的磁化方向平行的磁化强度和层叠方向上的铁磁层的磁化强度等于1 / 2.8-1 / 1.5的膜厚度，第二非磁性层 8，以及设置在第二非磁性层上并且在垂直于膜表面的方向上具有磁各向异性的存储层2以及由自旋极化电子的作用而改变的磁化方向。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2010080733A Magnetoresistive element, and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2010080733A
公开(公告)日：2010-04-08
申请号：JP2008248418
申请日：2008-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , YOSHIKAWA MASATOSHI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105
CPC分类号： G11C11/161 , G11C11/1673 , G11C11/1675
摘要： PROBLEM TO BE SOLVED: To allow the reduction of an inversion current upon magnetization inversion of a recording layer. SOLUTION: A magnetoresistive element includes: a piezoelectric layer 11 wherein a lattice expands/contracts due to application of a voltage; a recording later 12 which is formed on the piezoelectric layer and has a magnetic anisotropy in a direction perpendicular to a layer surface and changes the direction of magnetization by action of spin-polarized electrons; a first nonmagnetic layer 13 provided on the recording layer, and a reference layer 14 which is provided on the first nonmagnetic layer and has a magnetic anisotropy in a direction perpendicular to the layer surface. A thermal disturbance resistance of the recording layer upon voltage application for reading is higher than that upon voltage application for writing. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：允许在记录层的磁化反转时减小反转电流。解决方案：磁阻元件包括：压电层11，其中晶格由于施加电压而膨胀/收缩; 在压电层上形成的记录物12，在垂直于层面的方向上具有磁各向异性，并通过自旋极化电子的作用改变磁化方向; 设置在记录层上的第一非磁性层13和设置在第一非磁性层上并且在垂直于层表面的方向上具有磁各向异性的参考层14。电压施加时的记录层的热干扰电阻高于写入用电压时的耐热干扰性。版权所有（C）2010，JPO＆INPIT

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