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1. 发明专利

JP2012064818A Magnetoresistive element 有权
标题翻译：磁电元件
公开(公告)号：JP2012064818A
公开(公告)日：2012-03-29
申请号：JP2010208616
申请日：2010-09-16
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , DAIBO TATATOMI , KAI TADASHI , NAGASE TOSHIHIKO , NOMA KENJI , YODA HIROAKI
IPC分类号： H01L27/105 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： H01L43/02 , G01R33/091 , G01R33/093 , G11B5/66 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/30 , H01L27/228 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To reduce the write current.SOLUTION: A magnetoresistive element 10 comprises: a recording layer 13 having magnetic anisotropy in the direction normal to a film surface and a variable magnetization direction; a reference layer 15 having magnetic anisotropy in the direction normal to a film surface and a variable magnetization direction; an intermediate layer 14 provided between the recording layer 13 and the reference layer 15; and an underlying layer 12 provided on a surface of the recording layer 13 opposite from a surface where the intermediate layer 14 is provided. The recording layer 13 has a magnetic layer 13C provided on the intermediate layer 14 side and containing CoFe as a main component, and a magnetic layer 13A provided on the underlying layer 12 side and containing CoFe as a main component, where the concentration of Fe in the magnetic layer 13C is higher than the concentration of Fe in the magnetic layer 13A. The underlying layer 12 consists of a nitride compound.
摘要翻译：要解决的问题：减少写入电流。解决方案：磁阻元件10包括：在垂直于膜表面的方向和可变的磁化方向上具有磁各向异性的记录层13; 在垂直于膜表面的方向和可变的磁化方向上具有磁各向异性的参考层15; 设置在记录层13和参考层15之间的中间层14; 以及设置在与设置中间层14的表面相反的记录层13的表面上的下层12。记录层13具有设置在中间层14侧并含有CoFe作为主要成分的磁性层13C和设置在下层12侧并含有CoFe作为主要成分的磁性层13A，其中Fe的浓度磁性层13C比磁性层13A中的Fe的浓度高。底层12由氮化物组成。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2011198809A Magnetoresistive element, method for manufacturing the same, and magnetic memory 有权
标题翻译：磁性元件，制造它们的方法和磁记忆
公开(公告)号：JP2011198809A
公开(公告)日：2011-10-06
申请号：JP2010060903
申请日：2010-03-17
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , DAIBO TADAOMI , KAI TADASHI , YODA HIROAKI , HASHIMOTO YUTAKA
IPC分类号： H01L43/12 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element having a high MR ratio, and to provide a method for manufacturing the same, and a magnetic memory.SOLUTION: The magnetoresistive effect element includes a first magnetic layer 14; a tunnel barrier layer 16 provided on the first magnetic layer; a second magnetic layer 18a provided on the tunnel barrier layer and containing CoFe; and a nonmagnetic layer 19, provided on the second magnetic layer and containing nitrogen and at least one element selected from the group consisting of B, Ta, Zr, Al, and Ce.
摘要翻译：要解决的问题：提供具有高MR比的磁阻效应元件，并提供其制造方法和磁存储器。解决方案：磁阻效应元件包括第一磁性层14; 设置在第一磁性层上的隧道势垒层16; 设置在隧道势垒层上并含有CoFe的第二磁性层18a; 以及设置在第二磁性层上并含有氮和选自B，Ta，Zr，Al和Ce中的至少一种元素的非磁性层19。

3. 发明专利

JP2011071352A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2011071352A
公开(公告)日：2011-04-07
申请号：JP2009221569
申请日：2009-09-25
申请人： National Institute Of Advanced Industrial Science & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： KAI TADASHI , NISHIYAMA KATSUYA , NAGASE TOSHIHIKO , YOSHIKAWA MASAHISA , KITAGAWA EIJI , DAIBO TATATOMI , NAGAMINE MAKOTO , NAKAYAMA MASAHIKO , SHIMOMURA NAOHARU , YODA HIROAKI , YAKUSHIJI HIROSHI , YUASA SHINJI , KUBOTA HITOSHI , NAGAHAMA TARO , FUKUSHIMA AKIO , ANDO KOJI
IPC分类号： H01L43/08 , G11C11/15 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： PROBLEM TO BE SOLVED: To provide a spin-transfer-torque writing type magnetoresistive element with thermal stability and low current consumption. SOLUTION: The magnetoresistive element includes a first magnetic layer 3 which has an easy axis of magnetization in a direction vertical to a film surface and has variable magnetization direction, a second magnetic layer 2 which has an easy axis of magnetization in the direction vertical to the film surface, and a first nonmagnetic layer 4 provided between the first magnetic layer 3 and second magnetic layer 2. The first magnetic layer 3 is made of a ferromagnetic material which includes a CoPd alloy or CoPt alloy having Co and Pd or Co and Pt laminated alternately on an atomically close-packed plane thereof, and has a (c) axis in the direction vertical to the film surface. The magnetization direction of the first magnetic layer 3 varies with a bidirectional current penetrating the first magnetic layer 3, first nonmagnetic layer 4 and second magnetic layer 2. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有热稳定性和低电流消耗的自旋转矩扭矩书写型磁阻元件。解决方案：磁阻元件包括第一磁性层3，其在垂直于膜表面的方向上具有易磁化轴并且具有可变的磁化方向;第二磁性层2，其在方向上具有易磁化轴设置在第一磁性层3和第二磁性层2之间的第一非磁性层4.第一磁性层3由包含Co和Pd或Co的CoPd合金或CoPt合金的铁磁材料制成并且Pt在其原子紧密堆积的平面上交替层压，并且在垂直于膜表面的方向上具有（c）轴。第一磁性层3的磁化方向随着穿过第一磁性层3，第一非磁性层4和第二磁性层2的双向电流而变化。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2010080746A Magnetoresistance effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁记忆
公开(公告)号：JP2010080746A
公开(公告)日：2010-04-08
申请号：JP2008248633
申请日：2008-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： OSEGI JUNICHI , SHIMOMURA NAOHARU , IKEGAWA SUMIO , KAI TADASHI , NAKAYAMA MASAHIKO , AIKAWA HISANORI , KISHI TATSUYA , KODA HIROAKI
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1675
摘要： PROBLEM TO BE SOLVED: To reduce a leakage magnetic field applied to a storage layer as much as possible.
SOLUTION: A magnetoresistance effect element includes: a ferromagnetic layer 10 having a magnetic anisotropy in the vertical direction to a film surface; a first nonmagnetic layer 8 formed on the ferromagnetic layer; and a reference layer 6 being formed on the first nonmagnetic layer, having the magnetic anisotropy in the vertical direction of the film surface while having a magnetization antiparallel with the direction of the magnetization of the ferromagnetic layer and having a film thickness of ≥1/2.8 and ≤1/1.5 of the film thickness in the laminating direction of the ferromagnetic layer. The magnetoresistance effect element further includes: a second nonmagnetic layer 8 formed on the reference layer; and the storage layer 2 being formed on the second nonmagnetic layer and changing the direction of the magnetization by the working of electrons having the magnetic anisotropy in the vertical direction of the film surface and spin-polarized.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：尽可能减少施加到存储层的泄漏磁场。解决方案：磁阻效应元件包括：在垂直于膜表面的方向上具有磁各向异性的铁磁层10; 形成在铁磁层上的第一非磁性层8; 以及在第一非磁性层上形成的参考层6，其具有在膜表面的垂直方向上的磁各向异性，同时具有与铁磁层的磁化方向反平行并具有≥1/ 2.8的膜厚度的磁化和铁磁层的层叠方向的膜厚的≤1/ 1.5。磁阻效应元件还包括：形成在参考层上的第二非磁性层8; 并且存储层2形成在第二非磁性层上，并且通过在膜表面的垂直方向上具有磁各向异性的电子的工作和自旋极化来改变磁化方向。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2008252018A Magnetoresistance effect element, and magnetic random access memory using the same 审中-公开
标题翻译： MAGNETORESISTANCE效应元件和使用其的磁性随机存取存储器
公开(公告)号：JP2008252018A
公开(公告)日：2008-10-16
申请号：JP2007094625
申请日：2007-03-30
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASAHISA , KITAGAWA EIJI , KAI TADASHI , NAGASE TOSHIHIKO , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11B5/39 , H01F10/14 , H01F10/16 , H01F41/32 , H01L21/8246 , H01L27/105 , H01L29/82
CPC分类号： H01L43/10 , G11C11/161 , H01L27/228 , Y10S977/935
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element for spin injection writing system which is thermally stable and enables magnetization reversal of low current.
SOLUTION: The magnetresistance effect element 1 includes a first magnetization fixed layer 2 having a fixed magnetization direction. A mangnetization variable layer 3 has a variable magnetization direction, and contains at least one element selected from among Fe, Co and Ni, at least one element selected from among Ru, Rh, Pd, Ag, Re, Os, Ir, Pt and Au, and at least one element selected from among V, Cr and Mn. A first intermediate layer 4 is provided between the first magnetization fixed layer and the magnetization variable layer, and made of a non-magnetic material. The direction of magnetization of the magnetization variable layer varies depending on the bidirectional current penetrating through the first magnetization fixed layer, the first intermediate layer and the magnetization variable layer.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种热稳定的自旋注入写入系统的磁阻效应元件，并能够实现低电流的磁化反转。解决方案：磁阻效应元件1包括具有固定的磁化方向的第一磁化固定层2。锰化变性层3具有可变的磁化方向，并且包含选自Fe，Co和Ni中的至少一种元素，选自Ru，Rh，Pd，Ag，Re，Os，Ir，Pt和Au中的至少一种元素，和选自V，Cr和Mn中的至少一种元素。第一中间层4设置在第一磁化固定层和磁化变化层之间，由非磁性材料制成。磁化可变层的磁化方向根据穿透第一磁化固定层，第一中间层和磁化变化层的双向电流而变化。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2007142364A Magnetoresistance effect element, magnetic random access memory, electronic card and electronic device 有权
标题翻译：磁阻效应元件，磁性随机存取存储器，电子卡和电子设备
公开(公告)号：JP2007142364A
公开(公告)日：2007-06-07
申请号：JP2006172845
申请日：2006-06-22
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGASE TOSHIHIKO , YOSHIKAWA MASAHISA , KITAGAWA EIJI , NAKAYAMA MASAHIKO , KAI TADASHI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/10
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To maintain a thermal agitation resistance with high bit information and realize a large capacity, even if a memory cell is fined. SOLUTION: A magnetoresistance effect element is provided with: a fixed layer 12 which has a first magnetization 22 directed in a direction perpendicular to a film surface; a recording layer 11 which has a second magnetization 21 directed in a direction perpendicular to the film surface, in which a direction of the second magnetization 21 is reversible by a spin-polarized electron; and a nonmagnetic layer 13 which is provided between the fixed layer 12 and the recording layer 11 and has a first surface facing to the fixed layer 12 and a second surface facing to the recording layer 11. A saturation magnetization Ms of the recording layer 11 satisfies a relation 0≤Ms COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：即使存储单元被罚款，为了保持具有高位信息的热搅拌电阻并实现大容量。解决方案：磁阻效应元件设置有：固定层12，其具有指向垂直于膜表面的方向的第一磁化22; 记录层11具有在垂直于膜表面的方向上的第二磁化强度21，其中第二磁化强度21的方向由自旋极化电子可逆; 以及设置在固定层12和记录层11之间并具有面向固定层12的第一表面和面向记录层11的第二表面的非磁性层13.记录层11的饱和磁化强度Ms满足写入电流密度为Jw时，关系为0≤Ms<√äJw/（6πAt）}，记录层11的膜厚度为t，常数为A.A是g'×e×α/（h / 2π×g），其中g'是g因子，e是电量的量子，α是吉尔伯特的倾倒常数，h是普朗克常数，g是当第一和第二磁化22,21是平行排列。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2006108566A Magnetroresistive effect element 有权
标题翻译：磁感应效应元件
公开(公告)号：JP2006108566A
公开(公告)日：2006-04-20
申请号：JP2004296457
申请日：2004-10-08
申请人： Toshiba Corp , 株式会社東芝
发明人： KISHI TATSUYA , NAKAYAMA MASAHIKO , FUKUZUMI YOSHIAKI , KAI TADASHI
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To realize erroneous writing prevention of semi-selective cell and reduction of a switching magnetic field. SOLUTION: The magnetroresistive effect element has a laminated structure having first and second ferroelectric layers and nonmagnetic layer disposed therebetween. The planar shape of at least one of the first and second ferroelectric layers is a combination of two or more letters "Cs". COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：实现半选择性单元的错误写入防止和切换磁场的减少。解决方案：磁阻效应元件具有层压结构，其具有第一和第二铁电层和设置在其间的非磁性层。第一和第二铁电体层中的至少一个的平面形状是两个或多个字母“Cs”的组合。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005310369A Magnetic recording medium and magnetic recording device 审中-公开
标题翻译：磁记录介质和磁记录装置
公开(公告)号：JP2005310369A
公开(公告)日：2005-11-04
申请号：JP2005157387
申请日：2005-05-30
申请人： Toshiba Corp , 株式会社東芝
发明人： KIKITSU SATORU , AKIYAMA JUNICHI , ICHIHARA KATSUTARO , KAI TADASHI , NAGASE TOSHIHIKO , MAEDA TOMOYUKI
IPC分类号： G11B5/66 , G11B5/02 , G11B5/65 , G11B11/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetic recording medium and a magnetic recording device capable of realizing high-density recording exceeding a thermal fluctuation limit.
SOLUTION: This magnetic recording medium is provided with a substrate, a function layer formed on the substrate and containing an antiferromagnetic substance or ferrimagnetic substance, and a recording layer formed on the function layer and having a structure of magnetic particles and a nonmagnetic substance wall filling between the magnetic particles. The function layer and the recording layer are stacked together to perform exchange coupling interaction under a use environment. A condition TcR>TcE is satisfied where TcR is a Curie temperature of the recording layer and TcE is a temperature at which the exchange coupling interaction of the function layer and the recording layer is eliminated.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供能够实现超过热波动极限的高密度记录的磁记录介质和磁记录装置。解决方案：该磁记录介质设置有基板，形成在基板上并包含反铁磁物质或亚铁磁物质的功能层，以及形成在功能层上并具有磁性颗粒和非磁性结构的记录层物质壁填充在磁性颗粒之间。功能层和记录层堆叠在一起，以在使用环境下进行交换耦合相互作用。 TcR为记录层的居里温度，TcE为消除功能层与记录层的交换耦合相互作用的温度的条件TcR> TcE。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2005310368A Magnetic recording medium and magnetic recording device 审中-公开
标题翻译：磁记录介质和磁记录装置
公开(公告)号：JP2005310368A
公开(公告)日：2005-11-04
申请号：JP2005157386
申请日：2005-05-30
申请人： Toshiba Corp , 株式会社東芝
发明人： KIKITSU SATORU , AKIYAMA JUNICHI , ICHIHARA KATSUTARO , KAI TADASHI , NAGASE TOSHIHIKO , MAEDA TOMOYUKI
IPC分类号： G11B5/65 , G11B5/64 , G11B5/66
摘要： PROBLEM TO BE SOLVED: To provide a magnetic recording medium and a magnetic recording device capable of realizing high-density recording exceeding a thermal fluctuation limit. SOLUTION: This magnetic recording medium is provided with a substrate, a base layer formed on the substrate and including a magnetic substance, a switching layer formed on the base layer and including a magnetic substance, and a recording layer formed on the switching layer and having a structure comprising magnetic particles and a nonmangetic wall filling between the magnetic particles. The base layer, the switching layer, and the recording layer are stacked together to perform exchange coupling interaction. The structure of the base layer, the switching layer and the recording layer is set to satisfy a condition TcS COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供能够实现超过热波动极限的高密度记录的磁记录介质和磁记录装置。解决方案：该磁记录介质设置有基板，形成在基板上的基层，包括磁性物质，形成在基层上并包括磁性体的开关层，以及形成在开关上的记录层并且具有包括磁性颗粒和填充在磁性颗粒之间的非线性壁的结构。基层，开关层和记录层堆叠在一起以执行交换耦合相互作用。基极层，开关层和记录层的结构被设定为满足条件TcS

10. 发明专利

JP2005019464A Magnetic random access memory, electronic card, and electronic device 有权
标题翻译：磁性随机存取存储器，电子卡和电子设备
公开(公告)号：JP2005019464A
公开(公告)日：2005-01-20
申请号：JP2003178417
申请日：2003-06-23
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGASE TOSHIHIKO , YODA HIROAKI , YOSHIKAWA MASAHISA , KAI TADASHI , KISHI TATSUYA , AIKAWA HISANORI , UEDA TOMOMASA
IPC分类号： G06K19/077 , G11C11/14 , G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C11/16
摘要： PROBLEM TO BE SOLVED: To provide a magnetic random access memory (MRAM) that is improved in thermal agitation resistance and writing efficiency by lowering the value of a writing current and securing thermal agitation resistance of bit information. SOLUTION: In the MRAM, "0" and "1" bits corresponding to information are written in the recording layer of one of the magnetic layers of an MTJ element having two magnetic layers pinching a nonmagnetic layer by changing the direction of magnetization of the recording layer, by generating an induced magnetic flux by making a current to flow to closely arranged writing wiring in the MTJ element, in a state where the "0" and "1" bits corresponding to the information are made corresponding to the resistance value of the MJT element which changes depending upon the arranged state of the magnetization of the two magnetic layers. The MTJ element 10 is a vertical MTJ element in which the directions of magnetization of the magnetic layers 11 and 12 are directed perpendicularly to the surfaces of the layers 11 and 12. The writing wiring 30 is arranged perpendicularly to the thickness direction of the MTJ element 10, and impresses a generated magnetic field upon the magnetic layers 11 and 12 of the element 10 in the directions of magnetization. Magnetic yokes 20 pinch the MTJ element 10 in the thickness direction, and impress the magnetic field generated by the writing wiring 30 upon the magnetic layers 11 and 12 of the element 10. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供通过降低写入电流的值并确保位信息的热搅拌电阻来提高耐热搅拌电阻和写入效率的磁性随机存取存储器（MRAM）。解决方案：在MRAM中，对应于信息的“0”和“1”位被写入通过改变磁化方向的具有两个磁性层夹持非磁性层的MTJ元件的磁层之一的记录层中通过使电流流向MTJ元件中紧密排列的写入布线而产生感应磁通的状态，其中对应于信息的“0”和“1”位对应于电阻 MJT元件的值根据两个磁性层的磁化的布置状态而变化。 MTJ元件10是垂直的MTJ元件，其中磁性层11和12的磁化方向垂直于层11和12的表面。书写布线30布置成垂直于MTJ元件的厚度方向并且在磁化方向上将元件10的磁性层11和12上产生的磁场印制。磁轭20在厚度方向上挤压MTJ元件10，并将由写入布线30产生的磁场施加到元件10的磁性层11和12上。（C）2005，JPO＆NCIPI

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