专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2009099628A Magneto-resistance effect element, and magnetic random access memory 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：JP2009099628A
公开(公告)日：2009-05-07
申请号：JP2007267238
申请日：2007-10-12
申请人： National Institute Of Advanced Industrial & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： NAKAYAMA MASAHIKO , YAKUSHIJI HIROSHI , IKEGAWA SUMIO , YUASA SHINJI , KAI TADASHI , NAGASE TOSHIHIKO , AMANO MINORU , AIKAWA HISANORI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01F10/123 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magneto-resistance effect element which is improved in resistance to thermal disturbance and can be stopped from entering an intermediate value state, and to provide a magnetic random access memory. SOLUTION: The magneto-resistance effect element has a fixed layer 11 which is made of a magnetic material and has first magnetism directed at right angles to a film surface, a recording layer 13 which is made of a magnetic material and has second magnetism directed at right angles to the film surface and can invert the direction of the second magnetism, and a nonmagnetic layer 12 provided between the fixed layer 11 and recording layer 13. A critical diameter (uniaxial critical diameter Ds*) which is determined by magnetic anisotropy, saturated magnetism, and exchange-coupling of the recording layer 13 and with which a single-magnetic-domain state is the only one stable state, or a critical diameter (uniaxial inversion critical diameter Ds) with which the single-magnetic-domain state is the only one stable state and inversion is caused in an inversion process while the single-magnetic-domain state is maintained is larger than the element diameter of the magneto-resistance effect element. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种耐热扰动性提高并且可以停止进入中间值状态的磁阻效应元件，并提供磁性随机存取存储器。解决方案：磁阻效应元件具有由磁性材料制成并且具有与膜表面成直角的第一磁性的固定层11，由磁性材料制成并具有第二磁性材料的记录层13 具有与膜表面成直角的磁性并且可以反转第二磁性的方向，以及设置在固定层11和记录层13之间的非磁性层12.由磁性材料确定的临界直径（单轴临界直径Ds *）记录层13的各向异性，饱和磁性和交换耦合，单磁畴状态是唯一的一个稳定状态，或临界直径（单轴反转临界直径Ds），单磁畴状态是唯一的稳定状态，并且在反转过程中引起反转，同时保持单磁畴状态大于磁阻效应元件的元件直径 ent。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2009065040A Magnetic material, and magnetoresistance element using it 审中-公开
标题翻译：磁性材料和使用它的磁阻元件
公开(公告)号：JP2009065040A
公开(公告)日：2009-03-26
申请号：JP2007232843
申请日：2007-09-07
申请人： National Institute Of Advanced Industrial & Technology , Tohoku Univ , 国立大学法人東北大学 , 独立行政法人産業技術総合研究所
发明人： KUBOTA HITOSHI , FUKUSHIMA AKIO , YAKUSHIJI HIROSHI , NAGAHAMA TARO , YUASA SHINJI , ANDO KOJI , OKANE MIKIHIKO , WATANABE YOSHIO , ANDO YASUO , MIYAZAKI TERUNOBU
IPC分类号： H01F10/16 , H01F1/14 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic material having both low magnetization and a low damping constant. SOLUTION: This magnetic material has a composition of (Co-Fe) a X b B c (a composition ratio of Co to Fe is optional, a=45-80%, b=5-25% and c=15-30%) prepared by adding an element X (Cr or V) to a Co-Fe-B alloy. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有低磁化强度和低阻尼常数的磁性材料。＆lt; P＆gt;解决方案：该磁性材料具有（Co-Fe）组合物，其组成比为Co至通过向Co-Fe-B合金中添加元素X（Cr或V）制备，Fe是任选的，a = 45-80％，b = 5-25％，c = 15-30％）。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2008310403A Random number generator 有权
标题翻译：随机数发电机
公开(公告)号：JP2008310403A
公开(公告)日：2008-12-25
申请号：JP2007155008
申请日：2007-06-12
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： FUKUSHIMA AKIO , KUBOTA HITOSHI , YAKUSHIJI HIROSHI , YUASA SHINJI , ANDO KOJI
IPC分类号： G06F7/58
CPC分类号： G06F7/588
摘要： PROBLEM TO BE SOLVED: To provide a random number generator capable of increasing a random number generation speed, and compactly and easily obtaining a circuit configuration. SOLUTION: The random number generator includes a magnetoresistive element, which is composed of three layers, i.e., a magnetic free layer, an intermediate layer, and a magnetic pinned layer, and has at least two or more resistance values in response to the arrayal of magnetization in the magnetic free layer and the magnetic pinned layer. A magnetization current for allowing the inversion probability of the magnetic free layer to be an arbitrary value between zero and one is made to flow in the magnetoresistive element, thereby taking out the resistance value of the magnetoresistive element as a random number. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够增加随机数生成速度的随机数发生器，并且紧凑且容易地获得电路配置。解决方案：随机数发生器包括由三层组成的磁致电阻元件，即磁性自由层，中间层和磁性被钉扎层，并且具有至少两个或更多个响应于磁性自由层和磁性固定层中磁化的数组。磁阻电阻用于使磁自由层的反转概率为零和1之间的任意值的磁化电流在磁阻元件中流动，从而取出磁阻元件的电阻值作为随机数。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2011071352A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2011071352A
公开(公告)日：2011-04-07
申请号：JP2009221569
申请日：2009-09-25
申请人： National Institute Of Advanced Industrial Science & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： KAI TADASHI , NISHIYAMA KATSUYA , NAGASE TOSHIHIKO , YOSHIKAWA MASAHISA , KITAGAWA EIJI , DAIBO TATATOMI , NAGAMINE MAKOTO , NAKAYAMA MASAHIKO , SHIMOMURA NAOHARU , YODA HIROAKI , YAKUSHIJI HIROSHI , YUASA SHINJI , KUBOTA HITOSHI , NAGAHAMA TARO , FUKUSHIMA AKIO , ANDO KOJI
IPC分类号： H01L43/08 , G11C11/15 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： PROBLEM TO BE SOLVED: To provide a spin-transfer-torque writing type magnetoresistive element with thermal stability and low current consumption. SOLUTION: The magnetoresistive element includes a first magnetic layer 3 which has an easy axis of magnetization in a direction vertical to a film surface and has variable magnetization direction, a second magnetic layer 2 which has an easy axis of magnetization in the direction vertical to the film surface, and a first nonmagnetic layer 4 provided between the first magnetic layer 3 and second magnetic layer 2. The first magnetic layer 3 is made of a ferromagnetic material which includes a CoPd alloy or CoPt alloy having Co and Pd or Co and Pt laminated alternately on an atomically close-packed plane thereof, and has a (c) axis in the direction vertical to the film surface. The magnetization direction of the first magnetic layer 3 varies with a bidirectional current penetrating the first magnetic layer 3, first nonmagnetic layer 4 and second magnetic layer 2. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有热稳定性和低电流消耗的自旋转矩扭矩书写型磁阻元件。解决方案：磁阻元件包括第一磁性层3，其在垂直于膜表面的方向上具有易磁化轴并且具有可变的磁化方向;第二磁性层2，其在方向上具有易磁化轴设置在第一磁性层3和第二磁性层2之间的第一非磁性层4.第一磁性层3由包含Co和Pd或Co的CoPd合金或CoPt合金的铁磁材料制成并且Pt在其原子紧密堆积的平面上交替层压，并且在垂直于膜表面的方向上具有（c）轴。第一磁性层3的磁化方向随着穿过第一磁性层3，第一非磁性层4和第二磁性层2的双向电流而变化。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2010080920A Tunnel magnetic resistance element 有权
标题翻译：隧道电磁元件
公开(公告)号：JP2010080920A
公开(公告)日：2010-04-08
申请号：JP2009158982
申请日：2009-07-03
申请人： National Institute Of Advanced Industrial Science & Technology , 独立行政法人産業技術総合研究所
发明人： KUBOTA HITOSHI , FUKUSHIMA AKIO , YAKUSHIJI HIROSHI , YUASA SHINJI , ANDO KOJI , YAKATA SATOSHI
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11C11/161 , G11C11/1675
摘要： PROBLEM TO BE SOLVED: To provide a tunnel magnetic resistance element which has compatibility in reduction of a switching current with improvement of a thermal stability.
SOLUTION: The tunnel magnetic resistance element includes a fixed layer 30 having a ferromagnetic material, a tunnel insulating film 20 provided to be contacted with the fixed layer 30, and a free layer 10. The free layer 10 has a first ferromagnetic film 12 provided in contacted with the tunneling insulating film 20, a second ferromagnetic film 16 whose magnetization is coupled parallel to the magnetization of the first ferromagnetic film 12, and a conductive film 14 disposed between the first ferromagnetic film 12 and the second ferromagnetic film 16.
COPYRIGHT: (C)2010,JPO&INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式