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1. 发明专利

JP2006319343A Magnetoresistance effect element, magnetic head, and magnetic reproduction device 有权
标题翻译：磁阻效应元件，磁头和磁性再生器件
公开(公告)号：JP2006319343A
公开(公告)日：2006-11-24
申请号：JP2006143284
申请日：2006-05-23
申请人： Toshiba Corp , 株式会社東芝
发明人： KAMIGUCHI YUZO , YUASA HIROMI , NAGATA TOMOHIKO , YODA HIROAKI , KOUI KATSUHIKO , YOSHIKAWA MASATOSHI , IWASAKI HITOSHI , SAHASHI MASASHI , TAKAGISHI MASAYUKI
IPC分类号： H01L43/08 , G01R33/09 , G11B5/39 , H01F10/08 , H01L21/8246 , H01L27/105 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a practical magnetoresistance effect element having an appropriate resistance value, high sensitivity, and a small number of magnetic materials to be controlled, and also to provide a magnetic head and a magnetic reproduction device using the element.
SOLUTION: A magnetoresistance effect element, in which a sensor current is flowed in a direction perpendicular to a film surface, has an electron reflection layer on at least one of a pin layer, free layer, or nonmagnetic intermediate layer. The electron reflection layer may include an oxide, a nitride, a fluoride, or a carbide. Through effectively using a spin-dependent scattering effect, a practical magnetoresistance effect element is formed, which has an appropriate resistance value, high sensitivity, and a small number of magnetic materials to be controlled.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有适当电阻值，高灵敏度和少量待控制的磁性材料的实用磁阻效应元件，并且还提供使用该元件的磁头和磁性再现装置。解决方案：传感器电流在垂直于膜表面的方向上流动的磁阻效应元件在引脚层，自由层或非磁性中间层中的至少一个上具有电子反射层。电子反射层可以包括氧化物，氮化物，氟化物或碳化物。通过有效地使用自旋依赖散射效应，形成具有适当的电阻值，高灵敏度和少量待控制的磁性材料的实用的磁阻效应元件。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2010273211A Supplementary data transmission method, and data transmission system 审中-公开
标题翻译：补充数据传输方法和数据传输系统
公开(公告)号：JP2010273211A
公开(公告)日：2010-12-02
申请号：JP2009124495
申请日：2009-05-22
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASATOSHI
IPC分类号： H04N7/173 , H04H20/28 , H04H60/07 , H04N7/083 , H04N7/087 , H04N7/088 , H04N21/238 , H04N21/27
摘要： PROBLEM TO BE SOLVED: To provide a supplementary data transmission method capable of transmitting supplementary data of analog broadcast between devices each employing an SD-SDI system or an HD-SDI system. SOLUTION: Supplementary data to be superposed in a vertical flyback period of a video signal for analog broadcast are input to an analog/digital converter 12 to be simulatively converted to pseudo SDI data becoming a format of an SD-SDI system; the pseudo SDI data are transmitted to a transmission path different from a main line system of the HD-SDI system by a matrix switch 11; and video stream data of the main line system are replaced with the pseudo SDI data at the final stage by an inserter 16. Then the pseudo SDI data are delayed by a delay device 17 to align timing in accordance with processing times of a down converter 14 and a stream processor 15 used in an output path of the matrix switch 11. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在采用SD-SDI系统或HD-SDI系统的设备之间传输模拟广播的补充数据的补充数据传输方法。解决方案：将用于模拟广播的视频信号的垂直回扫周期中叠加的补充数据输入到模拟/数字转换器12，以模拟地转换为成为SD-SDI系统格式的伪SDI数据; 通过矩阵开关11将伪SDI数据发送到与HD-SDI系统的主线系统不同的传输路径; 并且主线系统的视频流数据由插入器16在最后级被伪SDI数据替换。然后，伪SDI数据被延迟装置17延迟，以根据下变频器14的处理时间对准定时以及在矩阵开关11的输出路径中使用的流处理器15.版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2010232499A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2010232499A
公开(公告)日：2010-10-14
申请号：JP2009079633
申请日：2009-03-27
申请人： Tohoku Univ , Toshiba Corp , 国立大学法人東北大学 , 株式会社東芝
发明人： NISHIYAMA KATSUYA , FENG WU , MIZUKAMI NARUMI , MIYAZAKI TERUNOBU , YODA HIROAKI , KAI TADASHI , KISHI TATSUYA , WATANABE DAISUKE , OKANE MIKIHIKO , ANDO YASUO , YOSHIKAWA MASATOSHI , NAGASE TOSHIHIKO , KITAGAWA EIJI , DAIBO TADAOMI , NAGAMINE MAKOTO
IPC分类号： H01L43/08 , H01F10/12 , H01F10/28 , H01F10/30 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/10
CPC分类号： H01L27/228 , B82Y25/00 , G01R33/09 , G11C11/16 , G11C11/161 , H01F10/123 , H01F10/1933 , H01F10/1936 , H01F10/28 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08 , H01L43/10 , Y10T428/1121 , Y10T428/1143
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element for a spin injection writing system which is stable to heat, and makes low-current magnetization inversion possible, and a magnetic memory using the element. SOLUTION: The magnetoresistive element includes a base layer 12, a first magnetic layer 13 whose magnetization direction is variable, and which has an axis of easy magnetization in a direction perpendicular to a film surface formed on the base layer, a first nonmagnetic layer 15 formed on the first magnetic layer, a second magnetic layer 17 whose direction of magnetization is fixed, and which has the axis of easy magnetization in a direction perpendicular to the film surface formed on the first nonmagnetic layer where the first magnetic layer contains a ferrimagnetic body layer in which a c-axis faces a direction perpendicular to the film surface, and which has a DO 22 structure or an L1 0 structure, and where the magnetization direction of the first magnetic layer becomes variable by a bidirectional current penetrating the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种对热稳定并使低电流磁化反转成为可能的自旋注入写入系统的磁阻元件和使用该元件的磁存储器。解决方案：磁阻元件包括基极层12，其磁化方向可变的第一磁性层13，其在垂直于形成在基底层上的膜表面的方向上具有容易磁化的轴，第一非磁性形成在第一磁性层上的层15，其磁化方向固定的第二磁性层17，并且在垂直于形成在第一非磁性层上的膜表面的方向上具有容易磁化的轴，其中第一磁性层含有亚铁磁体层，其中c轴面向与膜表面垂直的方向，并且具有DO 22 结构或L1 0 结构，并且其中磁化方向第一磁性层通过穿透第一磁性层，第一非磁性层和第二磁性层的双向电流而变化。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2010010720A Magnetoresistance effect element and magnetic random access memory utilizing the same 有权
标题翻译： MAGNETORESISTANCE效应元件和使用其的磁性随机存取存储器
公开(公告)号：JP2010010720A
公开(公告)日：2010-01-14
申请号：JP2009236542
申请日：2009-10-13
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASATOSHI , KITAGAWA EIJI , DAIBO TADAOMI , NAGASE TOSHIHIKO , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a low resistance magnetoresistance effect type element with a spin injection writing system.
SOLUTION: By forming a crystallization promoting membrane to promote crystallization, in contact with an interfacial magnetic membrane having amorphous structure, crystallization is promoted from a tunnel barrier layer side to match the interface between the tunnel barrier layer and the interfacial magnetic membrane layer, thereby obtaining the magnetoresistance effect type element with low resistance so as to obtain a desired current value, and with high TMR ratio.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有自旋注入写入系统的低电阻磁阻效应型元件。解决方案：通过形成结晶促进膜以促进结晶，与具有无定形结构的界面磁膜接触，从隧道势垒层侧促进结晶以匹配隧道势垒层和界面磁膜层之间的界面从而获得具有低电阻的磁电阻效应型元件，以获得期望的电流值，并具有高TMR比。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2010080733A Magnetoresistive element, and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2010080733A
公开(公告)日：2010-04-08
申请号：JP2008248418
申请日：2008-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , YOSHIKAWA MASATOSHI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105
CPC分类号： G11C11/161 , G11C11/1673 , G11C11/1675
摘要： PROBLEM TO BE SOLVED: To allow the reduction of an inversion current upon magnetization inversion of a recording layer. SOLUTION: A magnetoresistive element includes: a piezoelectric layer 11 wherein a lattice expands/contracts due to application of a voltage; a recording later 12 which is formed on the piezoelectric layer and has a magnetic anisotropy in a direction perpendicular to a layer surface and changes the direction of magnetization by action of spin-polarized electrons; a first nonmagnetic layer 13 provided on the recording layer, and a reference layer 14 which is provided on the first nonmagnetic layer and has a magnetic anisotropy in a direction perpendicular to the layer surface. A thermal disturbance resistance of the recording layer upon voltage application for reading is higher than that upon voltage application for writing. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：允许在记录层的磁化反转时减小反转电流。解决方案：磁阻元件包括：压电层11，其中晶格由于施加电压而膨胀/收缩; 在压电层上形成的记录物12，在垂直于层面的方向上具有磁各向异性，并通过自旋极化电子的作用改变磁化方向; 设置在记录层上的第一非磁性层13和设置在第一非磁性层上并且在垂直于层表面的方向上具有磁各向异性的参考层14。电压施加时的记录层的热干扰电阻高于写入用电压时的耐热干扰性。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009194393A Manufacturing method of reluctance element 有权
标题翻译：制动元件的制造方法
公开(公告)号：JP2009194393A
公开(公告)日：2009-08-27
申请号：JP2009107971
申请日：2009-04-27
申请人： Toshiba Corp , 株式会社東芝
发明人： UEDA TOMOMASA , AIKAWA HISANORI , YOSHIKAWA MASATOSHI , SHIMOMURA NAOHARU , NAKAYAMA MASAHIKO , IKEGAWA SUMIO , HOSOYA KEIJI , NAGAMINE MAKOTO
IPC分类号： H01L43/12 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To make it possible to manufacture a reluctance element capable of reducing an inversion current when magnetization is inverted in a simple process.
SOLUTION: The manufacturing method comprises the steps of forming a bottom electrode film on a substrate, forming a laminated film having a laminated structure of a first magnetic layer the magnetization direction of which provides an adhered magnetization adhered layer, a tunnel barrier layer and a second magnetic layer the magnetization direction of which provides a variable magnetization free layer on the bottom electrode film, forming a first top electrode film on the laminated film, patterning the first top electrode film to form a first top electrode, patterning the first top electrode to the second magnetic layer of the laminated layer as a mask, forming an insulating film so as to cover the first top electrode, exposing the top face of the first top electrode, forming a second top electrode film so as to cover the first top electrode, patterning the second top electrode film to form a second top electrode, and processing the second top electrode to the bottom electrode film as a mask with self-alignment.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了使得可以在简单的过程中制造当磁化反转时能够降低反转电流的磁阻元件。解决方案：制造方法包括以下步骤：在基板上形成底电极膜，形成具有层叠结构的叠层膜，该叠层结构具有其磁化方向提供粘附的磁化粘附层的第一磁性层，隧道势垒层以及第二磁性层，其磁化方向在底部电极膜上提供可变的磁化自由层，在层叠膜上形成第一顶部电极膜，图案化第一顶部电极膜以形成第一顶部电极，使第一顶部电极到层叠层的第二磁性层作为掩模，形成绝缘膜以覆盖第一顶部电极，暴露第一顶部电极的顶面，形成第二顶部电极膜以覆盖第一顶部电极，图案化第二顶部电极膜以形成第二顶部电极，以及将第二顶部电极处理到底部电极膜作为具有自我对准的面具。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2009081216A Magnetoresistance effect element and magnetic random access memory using the same 有权
标题翻译： MAGNETORESISTANCE效应元件和磁性随机存取存储器使用它
公开(公告)号：JP2009081216A
公开(公告)日：2009-04-16
申请号：JP2007248251
申请日：2007-09-25
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASATOSHI , KITAGAWA EIJI , DAIBO TADAOMI , NAGASE TOSHIHIKO , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a low-resistance magnetoresistance effect type element of a spin-injection writing system.
SOLUTION: A crystallization promoting film is formed to promote crystallization in contact with an interfacial magnetic film having an amorphous structure, thus promoting crystallization from the side of a tunnel barrier layer, and adjusting the interface between the tunnel barrier layer and the interfacial magnetic film layer. With this arrangement, it is possible to obtain the magnetoresistance effect element that has low resistance so as to obtain a desired current value, and has a high TMR ratio.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供自旋注入书写系统的低电阻磁阻效应型元件。解决方案：形成结晶促进膜以促进与具有无定形结构的界面磁性膜接触的结晶，从而促进从隧道势垒层侧的结晶，并调节隧道势垒层与界面之间的界面磁膜层。通过这种布置，可以获得具有低电阻以获得期望电流值并且具有高TMR比的磁阻效应元件。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008085170A Magnetoresistance effect-type element and magnetoresistance effect-type random access memory 有权
标题翻译：磁阻效应类型元素和磁阻效应类型随机访问存储器
公开(公告)号：JP2008085170A
公开(公告)日：2008-04-10
申请号：JP2006265201
申请日：2006-09-28
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASATOSHI , KAI TADASHI , NAGASE TOSHIHIKO , KITAGAWA EIJI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/10 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F41/307 , H01L27/228 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect-type element capable of having a high TMR ratio by a low area resistance (RA) and capable of performing the writing with a low current. SOLUTION: This element contains a laminated film comprising: a magnetization free layer 6 having a magnetic layer in which the orientation of the magnetization is variable; a magnetization fixed layer 2 having a magnetic layer in which the orientation of the magnetization is fixed; an inter layer 4 provided between the magnetization free layer 6 and the magnetization fixed layer 2, wherein the inter layer 4 comprises: an oxide containing an element selected from Ca, Mg, Sr, Ba, Ti and Sc, and B; and by applying the current in the both direction to the magnetization free layer and magnetization fixed layer between which the inter layer is interposed, the inversion of the magnetization in the magnetization free layer 6 is possible. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够通过低面积电阻（RA）具有高TMR比并且能够以低电流执行写入的磁阻效应型元件。解决方案：该元件包含层压膜，包括：具有磁化层的磁化层的磁化自由层6，其中磁化的取向可变; 具有固定磁化取向的磁性层的磁化固定层2; 设置在磁化自由层6和磁化固定层2之间的中间层4，其中层间4包括：含有选自Ca，Mg，Sr，Ba，Ti和Sc的元素的氧化物，以及B; 并且通过将电流在两个方向上施加到其间插入的磁化自由层和磁化固定层，磁化自由层6中的磁化的反转是可能的。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2008047257A Magnetic storage element, magnetic memory furnished with this magnetic storage element, and driving method of magnetic memory 有权
标题翻译：磁性存储元件，磁性存储元件和磁性存储器的驱动方法
公开(公告)号：JP2008047257A
公开(公告)日：2008-02-28
申请号：JP2006224012
申请日：2006-08-21
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , YOSHIKAWA MASATOSHI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： G11C11/1693 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： PROBLEM TO BE SOLVED: To attain the prevention of an erroneous writing operation at the read-out.
SOLUTION: A width of a write-in current pulse for writing information into a magnetic storage layer is larger than a width of a read-out current pulse for reading the information from the magnetic storage layer.
COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP2011119755A Magnetoresistive element and magnetic random access memory using the same 有权
标题翻译：使用相同的磁性元件和磁性随机存取存储器
公开(公告)号：JP2011119755A
公开(公告)日：2011-06-16
申请号：JP2011022105
申请日：2011-02-03
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASATOSHI , KITAGAWA EIJI , DAIBO TADAOMI , NAGASE TOSHIHIKO , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element which can be written in a manner of spin injection at low resistance. SOLUTION: Crystallization on the side of a tunnel barrier layer is promoted by forming a crystallization promoting film which promotes crystallization in contact with an interfacial magnetic film having an amorphous structure to match the tunnel barrier layer and the interfacial magnetic layer. In this manner, the magnetoresistive element having low resistance for obtaining desired current value and high TMR ratio. COPYRIGHT: (C)2011,JPO&INPIT

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