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1. 发明专利

JP2014063886A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2014063886A
公开(公告)日：2014-04-10
申请号：JP2012208293
申请日：2012-09-21
申请人： Toshiba Corp , 株式会社東芝 , Tohoku Univ , 国立大学法人東北大学
发明人： KATO YUSHI , DAIBO TADAOMI , KITAGAWA EIJI , OCHIAI TAKAO , KUBOTA TAKAHIDE , MIZUKAMI NARUMI , MIYAZAKI TERUNOBU
IPC分类号： H01L21/8246 , H01F10/12 , H01F10/30 , H01F10/32 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/10 , G11C11/161 , H01L27/228 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element having low saturation magnetization and high perpendicular magnetic anisotropy, and to provide a magnetic memory using the same.SOLUTION: The magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, where the first magnetic layer includes a magnetic film containing MnGe(77 atm%≤x≤82 atm%, 18 atm%≤y≤23 atm%, x+y=100 atm%).
摘要翻译：要解决的问题：提供具有低饱和磁化强度和高垂直磁各向异性的磁阻元件，并提供使用其的磁存储器。解决方案：磁阻元件包括第一磁性层，第二磁性层和第一非磁性所述第一磁性层包括含有MnGe的磁性膜（77atm％≤x≤82atm％，18atm％≤y≤23atm％，x + y = 100）原子％）。

2. 发明专利

JP2013197406A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2013197406A
公开(公告)日：2013-09-30
申请号：JP2012064344
申请日：2012-03-21
申请人： Toshiba Corp , 株式会社東芝 , Tohoku Univ , 国立大学法人東北大学
发明人： KATO YUSHI , DAIBO TADAOMI , KITAGAWA EIJI , KUBOTA TAKAHIDE , MIZUKAMI NARUMI , MIYAZAKI TERUNOBU
IPC分类号： H01L43/08 , H01F10/12 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/10
CPC分类号： G11C11/16 , G11C11/161
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element having low saturation magnetization and perpendicular magnetic anisotropy, and to provide a magnetic memory using the same.SOLUTION: The magnetoresistive element includes a first magnetic layer, a first nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first nonmagnetic layer. At least one of the first magnetic layer and second magnetic layer includes a magnetic film of ternary system MnAlGe(10atm%≤x≤44atm%, 10atm%≤y≤65atm%, 10atm%≤z≤80atm%, x+y+z=100atm%).
摘要翻译：要解决的问题：提供具有低饱和磁化强度和垂直磁各向异性的磁阻元件，并提供使用其的磁存储器。解决方案：磁阻元件包括第一磁性层，设置在第一磁性层上的第一非磁性层以及设置在第一非磁性层上的第二磁性层。第一磁性层和第二磁性层中的至少一个包括三元系MnAlGe（10atm％≤x≤44atm％，10atm％≤y≤65atm％，10atm％≤z≤80atm％，x + y + z）的磁性膜 = 100atm％）。

3. 发明专利

JP2010238769A Magnetoresistive element, and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2010238769A
公开(公告)日：2010-10-21
申请号：JP2009082741
申请日：2009-03-30
申请人： Toshiba Corp , 株式会社東芝
发明人： DAIBO TATATOMI , NAGASE TOSHIHIKO , KITAGAWA EIJI , YOSHIKAWA MASAHISA , NISHIYAMA KATSUYA , NAGAMINE MAKOTO , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11B5/39 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element which has vertical magnetic anisotropy and exhibits larger magnetoresistance effect.
SOLUTION: The magnetoresistive element 10 includes a stabilization layer 11, a nonmagnetic layer 13, a spin-polarization layer 12 provided between the stabilization layer 11 and the nonmagnetic layer 13, and having magnetic anisotropy in a direction perpendicular to a film surface, and a magnetic layer 14 provided on a side of the nonmagnetic layer 13 opposite to a side on which the spin-polarization layer 12 is provided. The stabilization layer 11 has a lattice constant smaller than that of the spin-polarization layer 12 in an in-plane direction. The spin-polarization layer 12 contains at least one or more elements selected from a group consisting of cobalt (Co) and iron (Fe), has a BCT (body-centered tetragonal) structure, and has a lattice constant ratio c/a of 1.10 to 1.35 when a direction perpendicular to the film surface is denoted by a c-axis and an in-plane direction is denoted by an a-axis.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有垂直磁各向异性并具有更大磁阻效应的磁阻元件。解决方案：磁阻元件10包括稳定层11，非磁性层13，设置在稳定层11和非磁性层13之间的自旋极化层12，并且在垂直于膜表面的方向上具有磁各向异性以及设置在与设置有自旋极化层12的一侧相反的非磁性层13侧的磁性层14。稳定层11的晶格常数小于自旋极化层12在面内方向的晶格常数。自旋极化层12含有选自由钴（Co）和铁（Fe）组成的组中的至少一种以上的元素，具有BCT（体心四方晶）结构，并具有晶格常数比c / a 当垂直于膜表面的方向由c轴表示并且面内方向由a轴表示时，为1.10至1.35。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2009239121A Magnetoresistive element and magnetic random access memory 审中-公开
标题翻译：磁性元件和磁性随机存取存储器
公开(公告)号：JP2009239121A
公开(公告)日：2009-10-15
申请号：JP2008084939
申请日：2008-03-27
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASAHISA , KITAGAWA EIJI , DAIBO TATATOMI , NAGAMINE MAKOTO , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11B5/39 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/10
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , G11C11/161 , G11C11/1675 , H01F10/123 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01F41/307 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To permit spin implantation flux to be reversal, al at high TMR (tunnel magneto-resistance) ratio and low current. SOLUTION: Magneto-resistance effect element is provided with the stack structure of base layer 11, a first magnetic layer 12, a tunnel barrier layer 13 and a second magnetic layer 14. The remanent magnetization of the first and second magnetic layers 12, 14 faces a direction which is l to the film surfaces of them, and the magnetization direction is not changed in one of the first and second magnetic layers 12, 14, while the magnetization direction is variable in the other of them. The first magnetic layer 12 is a ferromagnetic metal, consisting of not less than one element selected from the first group of Co, Fe and Ni, as well as, not less than one element selected from a second group of Cu, Ag, Au, Pd, Pt, Ru, Rh, Ir and Os while the base layer 11 is a metal containing one element selected from among the third group of Al, Ni, Co, Fe, Mn, Cr and V or a metal containing more than two kinds of elements selected from among a third group. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了允许自旋注入通量反转，在高TMR（隧道磁阻）比和低电流下。解决方案：磁阻效应元件设置有基极层11，第一磁性层12，隧道势垒层13和第二磁性层14的堆叠结构。第一和第二磁性层12的剩余磁化强度 14表示与它们的膜表面1相对的方向，并且在第一和第二磁性层12,14中的一个中磁化方向不改变，而另一个磁化方向是可变的。第一磁性层12是由不少于一种选自Co，Fe和Ni的元素组成的铁磁性金属，以及不少于一种选自Cu，Ag，Au， Pd，Pt，Ru，Rh，Ir和Os，而基层11是含有选自第三组Al，Ni，Co，Fe，Mn，Cr和V中的一种元素的金属或含有两种以上的金属的选自第三组的元素。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009212156A Magnetoresistive element and magnetic memory using the same 审中-公开
标题翻译：磁性元件和使用它的磁记忆
公开(公告)号：JP2009212156A
公开(公告)日：2009-09-17
申请号：JP2008051176
申请日：2008-02-29
申请人： Toshiba Corp , 株式会社東芝
发明人： DAIBO TATATOMI , YOSHIKAWA MASAHISA , NAGASE TOSHIHIKO , KITAGAWA EIJI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11B5/39 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element that develops giant magneto-resistance.
SOLUTION: The magnetoresistive element includes a first magnetic film 11, a tunnel barrier film 14 on the first magnetic film 11, and a second magnetic film 16 on the tunnel barrier film 14. The first magnetic film 11 contains at least one element selected out of C, P, As, Sn, Sb, Te, and Pb. The tunnel barrier film 14 has, on the film surface of the first magnetic film 11 on an interface between the first magnetic film 11 and tunnel barrier film 14, an NaCl type crystal structure (001) oriented in its normal direction.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供开发巨磁阻的磁阻元件。解决方案：磁阻元件包括第一磁性膜11，第一磁性膜11上的隧道阻挡膜14和隧道阻挡膜14上的第二磁性膜16.第一磁性膜11包含至少一个元件选自C，P，As，Sn，Sb，Te和Pb。隧道阻挡膜14在第一磁性膜11和隧道阻挡膜14之间的界面上的第一磁性膜11的膜表面上具有沿其法线方向取向的NaCl型晶体结构（001）。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2009081215A Magnetoresistive effect element and magnetic random access memory using the same 审中-公开
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：JP2009081215A
公开(公告)日：2009-04-16
申请号：JP2007248247
申请日：2007-09-25
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASATOSHI , DAIBO TADAOMI , KITAGAWA EIJI , NAGASE TOSHIHIKO , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105
CPC分类号： H01L27/228 , B82Y25/00 , G01R33/093 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element in a spin injection writing system capable of inverting the magnetization of a magnetization free layer having a high magnetization inversion energy required for holding information by a low current.
SOLUTION: The magnetoresistive effect element includes: a magnetization reference layer 2 having magnetization essentially perpendicular to a film plane, where the direction of the magnetization is fixed in one direction; a magnetization free layer 6 having magnetization perpendicular to the film plane, where the direction of the magnetization is variable; an intermediate layer 4 provided between the magnetization reference layer and the magnetization free layer; a magnetic phase transition layer 8 provided on an opposite side of the magnetization free layer from the intermediate layer, the magnetic phase transition layer being magnetically coupled to the magnetization free layer, and being capable of performing a magnetic phase transition between an antiferromagnetic material and a ferromagnetic material; and an excitation layer 10 provided on an opposite side of the magnetic phase transition layer from the magnetization free layer, and causing the magnetic phase transition layer to perform the magnetic phase transition from the antiferromagnetic material to the ferromagnetic material. The direction of the magnetization of the magnetization free layer can be changed by energizing the magnetization reference layer and the magnetization free layer via the intermediate layer.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种自旋注入写入系统中的磁阻效应元件，其能够使由低电流保持信息所需的具有高磁化反转能量的无磁化层的磁化反转。解决方案：磁阻效应元件包括：具有基本上垂直于膜平面的磁化的磁化参考层2，其中磁化方向在一个方向上被固定; 具有垂直于膜平面的磁化的磁化自由层6，其中磁化方向是可变的; 设置在所述磁化参考层和所述无磁化层之间的中间层4; 磁性相变层8，其设置在与中间层的磁化自由层的相对侧上，磁性相变层被磁耦合到无磁化层，并且能够在反铁磁材料和铁磁材料; 以及激励层10，其设置在与磁化自由层相反的磁性相变侧的相反侧，并且使得磁性相变层进行从反铁磁材料到铁磁性材料的磁相变。通过经由中间层激励磁化参考层和无磁化层，可以改变磁化自由层的磁化方向。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008109118A Magnetoresistance effect element and magnetic random access memory using it 审中-公开
标题翻译： MAGNETORESISTANCE效应元件和磁性随机存取存储器使用它
公开(公告)号：JP2008109118A
公开(公告)日：2008-05-08
申请号：JP2007249596
申请日：2007-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASAHISA , KAI TADASHI , NAGASE TOSHIHIKO , KITAGAWA EIJI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01F10/16 , H01F10/26 , H01F10/32 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element of a spin injection writing system which is capable of carrying out magnetization inversion at low current. SOLUTION: Magnetoresistance effect element includes a magnetization fixed layer 3 in which a magnetization direction is fixed. A magnetization variable layer 2 has a variable magnetization direction and consists of magnetic alloy having a BCC structure expressed by general formula: Fe 1-x-y Co x Ni y (0≤x+y≤1, 0≤x, y≤1), and includes at least one additive element selected from the group consisting of V, Cr, Mn, wherein the content of the additive element is set within 0 COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够以低电流进行磁化反转的自旋注入写入系统的磁阻效应元件。解决方案：磁阻效应元件包括固定有磁化方向的磁化固定层3。磁化变化层2具有可变的磁化方向，由具有由以下通式表示的BCC结构的磁性合金构成：Fe 1-xy / SB>（0≤x+y≤1,0≤x，y≤1），并且包括选自V，Cr，Mn中的至少一种添加元素，其中添加元素的含量设置在 0

8. 发明专利

JP2014179639A Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：JP2014179639A
公开(公告)日：2014-09-25
申请号：JP2014095765
申请日：2014-05-07
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMOMURA NAOHARU , KITAGAWA EIJI , KAMATA SHINGI , AMANO MINORU , OSAWA YUICHI , SAIDA DAISUKE
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： G11C11/161
摘要： PROBLEM TO BE SOLVED: To correct a shift of an RH curve of a storage layer regardless of the saturation magnetization of a reference layer.SOLUTION: A magnetic memory according to an embodiment includes first and second magnetoresistive elements MTJ each of which includes a storage layer 10 having vertical and variable magnetization, a tunnel barrier layer 11, a reference layer 12 having vertical and invariable magnetization, and a shift correcting layer 13 having vertical and invariable magnetization, the layers being laminated, in the order, in a first direction. The magnetization direction of the reference layer 12 is reverse to the magnetization direction of the shift correcting layer 13. The first and second magnetoresistive elements MTJ align in a second direction intersecting the first direction. The reference layers 12 of the first and second magnetoresistive elements MTJ extend in the second direction while being connected each other. The shift correcting layers 13 of the first and second magnetoresistive elements MTJ extend in the second direction while being connected each other.
摘要翻译：要解决的问题：校正存储层的RH曲线的偏移，而不管参考层的饱和磁化强度如何。根据实施例的磁存储器包括第一和第二磁阻元件MTJ，每个磁阻元件包括存储层具有垂直和可变磁化强度的隧道势垒层11，具有垂直和不变磁化的参考层12和具有垂直和不变磁化的位移校正层13，这些层以第一方向依次层叠。参考层12的磁化方向与偏移校正层13的磁化方向相反。第一和第二磁阻元件MTJ在与第一方向相交的第二方向上对准。第一和第二磁阻元件MTJ的参考层12在彼此连接的同时在第二方向上延伸。第一和第二磁阻元件MTJ的移位校正层13在彼此连接的同时在第二方向上延伸。

9. 发明专利

JP2013073972A Magnetic random access memory with magnetoresistive effect device, diode and transistor 有权
标题翻译：具有磁感应效应器件，二极管和晶体管的磁性随机存取存储器
公开(公告)号：JP2013073972A
公开(公告)日：2013-04-22
申请号：JP2011209906
申请日：2011-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI
IPC分类号： H01L21/8246 , G11C11/15 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/222
摘要： PROBLEM TO BE SOLVED: To provide a magnetic memory which enables a high-speed operation.SOLUTION: A magnetic memory according to an embodiment comprises: a magnetoresistive effect device having a first magnetic layer, the magnetization of which remains unchanged in direction as a result of spin-injection writing, a second magnetic layer, the magnetization of which is variable in direction, and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer; a first wiring line electrically connected to one magnetic layer of the first and second magnetic layers of the magnetoresistive effect device; a select transistor, one of the source/drain of which is electrically connected to the other of the first and second magnetic layers of the magnetoresistive device; a second wiring line electrically connected to the other of the source/drain of the select transistor; a diode having one terminal electrically connected to the other of the first and second magnetic layers of the magnetoresistive device; a third wiring line electrically connected to the other terminal of the diode; and a sense amplifier electrically connected to the third wiring line.
摘要翻译：要解决的问题：提供一种能够进行高速操作的磁存储器。解决方案：根据实施例的磁存储器包括：磁阻效应器件，其具有第一磁性层，其磁化作为自旋注入写入的结果在方向上保持不变;第二磁性层，其磁化强度在第一磁性层和第二磁性层之间设置隧道势垒层; 与磁阻效应器件的第一和第二磁性层的一个磁性层电连接的第一布线; 选择晶体管，其源/漏之一电连接到磁阻器件的第一和第二磁性层中的另一个; 电连接到所述选择晶体管的源极/漏极的另一布线; 二极管，具有与磁阻器件的第一和第二磁性层中的另一个电连接的一个端子; 电连接到二极管的另一个端子的第三布线; 以及电连接到第三布线的读出放大器。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2012064818A Magnetoresistive element 有权
标题翻译：磁电元件
公开(公告)号：JP2012064818A
公开(公告)日：2012-03-29
申请号：JP2010208616
申请日：2010-09-16
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , DAIBO TATATOMI , KAI TADASHI , NAGASE TOSHIHIKO , NOMA KENJI , YODA HIROAKI
IPC分类号： H01L27/105 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： H01L43/02 , G01R33/091 , G01R33/093 , G11B5/66 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/30 , H01L27/228 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To reduce the write current.SOLUTION: A magnetoresistive element 10 comprises: a recording layer 13 having magnetic anisotropy in the direction normal to a film surface and a variable magnetization direction; a reference layer 15 having magnetic anisotropy in the direction normal to a film surface and a variable magnetization direction; an intermediate layer 14 provided between the recording layer 13 and the reference layer 15; and an underlying layer 12 provided on a surface of the recording layer 13 opposite from a surface where the intermediate layer 14 is provided. The recording layer 13 has a magnetic layer 13C provided on the intermediate layer 14 side and containing CoFe as a main component, and a magnetic layer 13A provided on the underlying layer 12 side and containing CoFe as a main component, where the concentration of Fe in the magnetic layer 13C is higher than the concentration of Fe in the magnetic layer 13A. The underlying layer 12 consists of a nitride compound.
摘要翻译：要解决的问题：减少写入电流。解决方案：磁阻元件10包括：在垂直于膜表面的方向和可变的磁化方向上具有磁各向异性的记录层13; 在垂直于膜表面的方向和可变的磁化方向上具有磁各向异性的参考层15; 设置在记录层13和参考层15之间的中间层14; 以及设置在与设置中间层14的表面相反的记录层13的表面上的下层12。记录层13具有设置在中间层14侧并含有CoFe作为主要成分的磁性层13C和设置在下层12侧并含有CoFe作为主要成分的磁性层13A，其中Fe的浓度磁性层13C比磁性层13A中的Fe的浓度高。底层12由氮化物组成。版权所有（C）2012，JPO＆INPIT

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