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1. 发明专利

JP2014179425A Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：JP2014179425A
公开(公告)日：2014-09-25
申请号：JP2013051806
申请日：2013-03-14
申请人： Toshiba Corp , 株式会社東芝 , National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： SHIMOMURA NAOHARU , KITAGAWA EIJI , AMANO MINORU , SAIDA DAISUKE , YAKUSHIJI KEI , NOZAKI TAKAYUKI , YUASA SHINJI , FUKUSHIMA AKIO , IMAMURA HIROSHI , KUBOTA HITOSHI
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： G11C11/161 , G11C11/155 , G11C11/165 , G11C11/1673 , G11C11/1675 , H01F10/123 , H01F10/3254 , H01F10/3286 , H01L27/228 , H01L29/82 , H01L43/02 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic memory capable of avoiding the occurence of a read disturb and having a margin for dispersion and fluctuation of a pulse width of writing and reading.SOLUTION: A magnetic memory includes at least one MTJ element having: a magnetic lamination structure 25 having a first magnetic layer 22 in which the orientation of magnetization is fixed, a second magnetic layer 24 in which the orientation of magnetization is variable, and a tunnel barrier layer 23 provided between the first magnetic layer 22 and the second magnetic layer 24; a first electrode 21 provided on an opposite side to the tunnel barrier layer 23 with respect to the first magnetic layer 22; a second electrode 26 provided on an opposite side to the tunnel barrier layer 23 with respect to the second magnetic layer 24; an insulating film 27 provided on a side face of the magnetic lamination structure; and a control electrode 28 provided on a side face of the magnetic lamination structure 25 via the insulating film 27 and to which a voltage is applied in reading. The voltage applied to the control electrode 28 in reading is a voltage set so as to increase an energy barrier of magnetization reversal of the second magnetic layer 24.
摘要翻译：要解决的问题：提供一种能够避免读取干扰的发生并且具有用于分散和写入和读取的脉冲宽度的波动的余量的磁存储器。解决方案：磁存储器包括至少一个MTJ元件，其具有：磁性层压结构25具有磁化取向固定的第一磁性层22，磁化取向可变的第二磁性层24和设置在第一磁性层22和第二磁性层之间的隧道势垒层23 层24; 相对于第一磁性层22设置在与隧道势垒层23相反的一侧的第一电极21; 相对于第二磁性层24设置在与隧道势垒层23相反的一侧的第二电极26; 设置在磁性层叠结构的侧面上的绝缘膜27; 以及经由绝缘膜27设置在磁性层压结构体25的侧面上并在其中施加电压的控制电极28。在读取中施加到控制电极28的电压是设定为增加第二磁性层24的磁化反转的能量势垒的电压。

2. 发明专利

JP2014179381A Magnetic storage element and nonvolatile storage device 有权
标题翻译：磁性存储元件和非易失存储器件
公开(公告)号：JP2014179381A
公开(公告)日：2014-09-25
申请号：JP2013050910
申请日：2013-03-13
申请人： Toshiba Corp , 株式会社東芝 , National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： SAIDA DAISUKE , AMANO MINORU , IMAMURA HIROSHI
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/5607 , H01L27/228 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic storage element and a nonvolatile storage device where malfunction is suppressed.SOLUTION: A magnetic storage element 110 includes a first lamination part SB1 and a second lamination part SB2. The first lamination part SB1 includes a first ferromagnetic layer 10, a second ferromagnetic layer 20, and a first non-magnetic layer 10n. A direction of magnetization of the first ferromagnetic layer 10 is fixed. The second ferromagnetic layer 20 includes a first part 21 and a second part 22. Directions of magnetization of the first and second parts are variable. A magnetic resonance frequency of the second part 22 is lower than that of the first part 21. The first non-magnetic layer 10n is provided between the first and second ferromagnetic layers. The second lamination part SB2 includes a third ferromagnetic layer 30 whose direction of magnetization is variable. When current flows to the first and second lamination parts, a rotating magnetic field is generated through precession of the magnetization of the third ferromagnetic layer 30. The magnetization of the first and second parts is directed in a direction corresponding to a direction of the current by action of spin-polarized electrons and the rotating magnetic field.
摘要翻译：要解决的问题：提供一种磁存储元件和抑制故障的非易失性存储装置。解决方案：磁存储元件110包括第一层叠部分SB1和第二层压部分SB2。第一层叠部分SB1包括第一铁磁层10，第二铁磁层20和第一非磁性层10n。第一铁磁层10的磁化方向是固定的。第二铁磁层20包括第一部分21和第二部分22.第一部分和第二部分的磁化方向是可变的。第二部分22的磁共振频率低于第一部分21的磁共振频率。第一非磁性层10n设置在第一和第二铁磁层之间。第二层压部分SB2包括其磁化方向可变的第三铁磁层30。当电流流到第一和第二层压部分时，通过第三铁磁层30的磁化的进动产生旋转磁场。第一和第二部分的磁化沿着与电流方向对应的方向指向自旋极化电子的作用和旋转磁场。

3. 发明专利

JP2009099628A Magneto-resistance effect element, and magnetic random access memory 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：JP2009099628A
公开(公告)日：2009-05-07
申请号：JP2007267238
申请日：2007-10-12
申请人： National Institute Of Advanced Industrial & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： NAKAYAMA MASAHIKO , YAKUSHIJI HIROSHI , IKEGAWA SUMIO , YUASA SHINJI , KAI TADASHI , NAGASE TOSHIHIKO , AMANO MINORU , AIKAWA HISANORI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01F10/123 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magneto-resistance effect element which is improved in resistance to thermal disturbance and can be stopped from entering an intermediate value state, and to provide a magnetic random access memory. SOLUTION: The magneto-resistance effect element has a fixed layer 11 which is made of a magnetic material and has first magnetism directed at right angles to a film surface, a recording layer 13 which is made of a magnetic material and has second magnetism directed at right angles to the film surface and can invert the direction of the second magnetism, and a nonmagnetic layer 12 provided between the fixed layer 11 and recording layer 13. A critical diameter (uniaxial critical diameter Ds*) which is determined by magnetic anisotropy, saturated magnetism, and exchange-coupling of the recording layer 13 and with which a single-magnetic-domain state is the only one stable state, or a critical diameter (uniaxial inversion critical diameter Ds) with which the single-magnetic-domain state is the only one stable state and inversion is caused in an inversion process while the single-magnetic-domain state is maintained is larger than the element diameter of the magneto-resistance effect element. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种耐热扰动性提高并且可以停止进入中间值状态的磁阻效应元件，并提供磁性随机存取存储器。解决方案：磁阻效应元件具有由磁性材料制成并且具有与膜表面成直角的第一磁性的固定层11，由磁性材料制成并具有第二磁性材料的记录层13 具有与膜表面成直角的磁性并且可以反转第二磁性的方向，以及设置在固定层11和记录层13之间的非磁性层12.由磁性材料确定的临界直径（单轴临界直径Ds *）记录层13的各向异性，饱和磁性和交换耦合，单磁畴状态是唯一的一个稳定状态，或临界直径（单轴反转临界直径Ds），单磁畴状态是唯一的稳定状态，并且在反转过程中引起反转，同时保持单磁畴状态大于磁阻效应元件的元件直径 ent。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2012204683A Magnetic resistance element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆
公开(公告)号：JP2012204683A
公开(公告)日：2012-10-22
申请号：JP2011068868
申请日：2011-03-25
申请人： Toshiba Corp , Tohoku University Wpi Advanced Institute For Materials Research , National Institute Of Advanced Industrial & Technology , 国立大学法人東北大学原子分子材料科学高等研究機構 , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： DAIBO TADAOMI , ITO JUNICHI , KAI TADASHI , AMANO MINORU , YODA HIROAKI , MIYAZAKI TERUNOBU , MIZUKAMI NARUMI , KUBOTA TAKAHIDE , YAKUSHIJI KEI , YUASA SHINJI , KUBOTA HITOSHI , FUKUSHIMA AKIO , NAGAHAMA TARO , ANDO KOJI
IPC分类号： H01L27/105 , H01F10/32 , H01L21/8246 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/10 , H01L23/528 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a magnetic resistance element having a perpendicular magnetic anisotropy and in which a larger magnetoresistance can be achieved, and a magnetic memory thereof.SOLUTION: The magnetic resistance element comprises: an under layer; a first magnetic layer that is formed on the under layer, and has a magnetic film having a magnetization easy axis perpendicular to the film plane, and represented by MnGa(45≤x
摘要翻译：要解决的问题：提供具有垂直磁各向异性并且可以实现更大磁阻的磁阻元件及其磁存储器。解决方案：磁阻元件包括：下层; 形成在下层上的第一磁性层，具有磁化容易轴垂直于膜平面的磁性膜，由Mn ＆lt; SB＆lt; SB POS = “POST”> 100-x （45≤x<64atm％）; 形成在第一磁性层上的第一非磁性层; 以及形成在所述第一非磁性层上的第二磁性层，并且具有磁化容易轴垂直于所述膜平面的磁性膜，并且由Mn ”Ga 100-y （45≤x<64atm％）。第一和第二磁性层中的Mn的组成比不同。通过在第一和第二磁性层之间通过第一非磁性层馈送的电流来改变第一磁性层的磁化方向。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2014067810A Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：JP2014067810A
公开(公告)日：2014-04-17
申请号：JP2012210980
申请日：2012-09-25
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMOMURA NAOHARU , KITAGAWA EIJI , KAMATA SHINGI , AMANO MINORU , OSAWA YUICHI , SAIDA DAISUKE
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： H01L43/02 , G11C11/155 , G11C11/161 , G11C11/1657 , G11C11/1659 , H01L27/228 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To allow an RH curve of a storage layer to be shifted regardless of saturation magnetization of a reference layer.SOLUTION: A magnetic memory of an embodiment includes a plurality of magnetoresistive elements MTJ which intersect in the first direction and are arranged in a second direction and each of which comprises a lamination structure in which a storage layer 10, a tunnel barrier layer 11, and a reference layer 12 are arranged in this order in a first direction; a conductive wire 18 which extends in the second direction and commonly connected with the plurality of magnetoresistive elements MTJ; insulation layers 17 which surround respective storage layers 10 of the plurality of magnetoresistive elements MTJ; and a shift correction layer 13 which are arranged adjacent to the second direction ends of the plurality of magnetoresistive elements MTJ. Two shift correction layers 13 arranged along a third direction are mutually separated. Further, the magnetization direction of the reference layer 12 and the magnetization direction of the shift correction layers 13 are the same.
摘要翻译：要解决的问题：为了允许存储层的RH曲线移动，而与基准层的饱和磁化强度无关。解决方案：一个实施例的磁存储器包括多个在第一方向上相交并且被布置的磁阻元件MTJ 在第二方向上，每一个都包括其中存储层10，隧道势垒层11和参考层12沿第一方向依次布置的叠层结构; 导线18，其在第二方向上延伸并与多个磁阻元件MTJ共同连接; 围绕多个磁阻元件MTJ的各个存储层10的绝缘层17; 以及与多个磁阻元件MTJ的第二方向端相邻配置的偏移校正层13。沿着第三方向布置的两个偏移校正层13相互分离。此外，参考层12的磁化方向和偏移校正层13的磁化方向相同。

6. 发明专利

JP2014067469A Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：JP2014067469A
公开(公告)日：2014-04-17
申请号：JP2012213274
申请日：2012-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： SAIDA DAISUKE , AMANO MINORU , SHIMOMURA NAOHARU
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： G11C11/1675 , G11C11/161
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile memory device capable of suppressing malfunction.SOLUTION: According to an embodiment, there is provided a nonvolatile memory device including a magnetic memory element and a control unit. The magnetic memory element includes first and second laminated sections. The first laminated section includes a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic layer. The magnetizing direction of the second ferromagnetic layer is variable. The second laminated section includes a third ferromagnetic layer and a nonmagnetic tunnel barrier layer. The magnetizing direction of the third ferromagnetic layer is variable. The control unit performs a first operation to set the magnetic memory element to a first state. The first operation includes a first preliminary operation for applying a first pulse voltage having a first rising time period to the magnetic memory element, and a first setting operation for applying a second pulse voltage having a second rising time period which is longer than the first rising time period to the magnetic memory element after the first preliminary operation.
摘要翻译：要解决的问题：提供一种能够抑制故障的非易失性存储装置。解决方案：根据实施例，提供一种包括磁存储元件和控制单元的非易失性存储装置。磁存储元件包括第一和第二层压部分。第一层压部分包括第一铁磁层，第二铁磁层和第一非磁性层。第二铁磁层的磁化方向是可变的。第二层压部分包括第三铁磁层和非磁性隧道势垒层。第三铁磁层的磁化方向是可变的。控制单元执行第一操作以将磁存储元件设置为第一状态。第一操作包括用于将具有第一上升时间周期的第一脉冲电压施加到磁存储元件的第一初步操作和用于施加具有比第一上升时间长的第二上升时间段的第二脉冲电压的第一设置操作在第一初步操作之后到磁存储元件的时间段。

7. 发明专利

JP2013197317A Magnetic storage element and nonvolatile storage 有权
标题翻译：磁性存储元件和非易失性存储
公开(公告)号：JP2013197317A
公开(公告)日：2013-09-30
申请号：JP2012062938
申请日：2012-03-20
申请人： Toshiba Corp , 株式会社東芝
发明人： SAIDA DAISUKE , AMANO MINORU , ITO JUNICHI
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/228 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a magnetic storage element in which malfunction is suppressed, and to provide a nonvolatile storage.SOLUTION: The magnetic storage element includes a laminate and a shield. The laminate includes a first laminate, and a second laminate. The first laminate includes a first ferromagnetic layer having a main surface and the direction of magnetization of which is fixed in a first direction, a second ferromagnetic layer the direction of magnetization of which is variable in a second direction, and a first nonmagnetic layer provided between the first ferromagnetic layer and second ferromagnetic layer. The second laminate includes a third ferromagnetic layer. The third ferromagnetic layer is laminated on the first laminate in the lamination direction perpendicular to the main surface, and the direction of magnetization of which is variable in a third direction. The shield faces at least a partial side face of the second laminate and the potential of which is controllable.
摘要翻译：要解决的问题：提供抑制故障的磁存储元件，并提供非易失性存储器。解决方案：磁存储元件包括层压板和屏蔽件。层压体包括第一层压板和第二层压板。第一层压体包括第一铁磁层，其具有主表面并且其磁化方向在第一方向上固定，第二铁磁层的磁化方向在第二方向上可变;以及第一非磁性层，第一铁磁层和第二铁磁层。第二层压板包括第三铁磁层。第三铁磁层在垂直于主表面的层叠方向上层叠在第一层叠体上，其磁化方向在第三方向上变化。屏蔽面向第二层压板的至少一部分侧面，其电位是可控的。

8. 发明专利

JP2013069819A Magnetic storage element and nonvolatile storage device 有权
标题翻译：磁性存储元件和非易失存储器件
公开(公告)号：JP2013069819A
公开(公告)日：2013-04-18
申请号：JP2011206661
申请日：2011-09-21
申请人： Toshiba Corp , 株式会社東芝
发明人： SAIDA DAISUKE , AMANO MINORU , ITO JUNICHI
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic storage element and a nonvolatile storage device which are capable of a stable operation.SOLUTION: According to an embodiment, a magnetic storage element includes first and second lamination parts. The first laminate part includes a first ferromagnetic layer, a first non-magnetic layer and a second ferromagnetic layer. The first ferromagnetic layer has magnetization fixed to a direction perpendicular to a surface and the second ferromagnetic layer has a magnetization direction variable to a direction perpendicular to the surface. The second lamination part includes a third ferromagnetic layer, a second non-magnetic layer and a fourth ferromagnetic layer. The third ferromagnetic layer has a magnetization direction variable to an in-plane direction and the fourth ferromagnetic layer has magnetization fixed to a direction perpendicular to the surface. A leak field Hs from the first, second and fourth ferromagnetic layers at a position of the third ferromagnetic layer, magnetic anisotropy Ku, damping constants α, magnetization Ms and a demagnetization factor Nz of the third ferromagnetic layer satisfy the following relational expression: Ku≤αMs(8πNzMs-Hs). A spin polarized electron and a revolving magnetic field generated in the third ferromagnetic layer act on the second ferromagnetic layer thereby to determine a magnetization direction of the second ferromagnetic layer.
摘要翻译：要解决的问题：提供能够稳定操作的磁存储元件和非易失性存储装置。解决方案：根据实施例，磁存储元件包括第一和第二层压部件。第一层压部件包括第一铁磁层，第一非磁性层和第二铁磁层。第一铁磁层具有固定在垂直于表面的方向上的磁化，第二铁磁层具有与垂直于表面的方向可变的磁化方向。第二层压部件包括第三铁磁层，第二非磁性层和第四铁磁层。第三铁磁层的磁化方向可以在面内方向上变化，第四铁磁层具有固定在垂直于表面的方向上的磁化。在第三铁磁层的位置处的第一，第二和第四铁磁层的漏磁场Hs，第三铁磁层的磁各向异性Ku，阻尼常数α，磁化强度Ms和退磁系数Nz满足以下关系式：Ku≤ αMs（8πNzMs-Hs）。在第三铁磁层中产生的自旋极化电子和旋转磁场作用在第二铁磁层上，从而确定第二铁磁层的磁化方向。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2012204688A Magnetic element and nonvolatile storage device 有权
标题翻译：磁性元件和非易失存储器件
公开(公告)号：JP2012204688A
公开(公告)日：2012-10-22
申请号：JP2011068928
申请日：2011-03-25
申请人： Toshiba Corp , 株式会社東芝
发明人： SAIDA DAISUKE , AMANO MINORU , ITO JUNICHI , OSAWA YUICHI , KASHIWADA SAORI , KAMATA SHINGI , DAIBO TATATOMI
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic element and a nonvolatile storage device which inhibit write disturb in read time.SOLUTION: According to an embodiment, a magnetic element comprises a first conductive layer, a second conductive layer, intermediate wiring, a first lamination part and a second lamination part. The intermediate wiring is provided between the first conductive layer and the second conductive layer. The first lamination part is provided between the first conductive layer and the intermediate wiring. The first lamination part includes a first ferromagnetic layer having magnetization fixed in a first direction, a second ferromagnetic layer laminated on the first ferromagnetic layer and having a variable magnetization direction and a first non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The second lamination part is provided between the second conductive layer and the intermediate wiring. The second lamination part includes a third ferromagnetic layer having a variable magnetization direction, a fourth ferromagnetic layer laminated on the third ferromagnetic layer and having magnetization fixed in a second direction and a second non-magnetic layer provided between the third ferromagnetic layer and the fourth ferromagnetic layer.
摘要翻译：要解决的问题：提供一种在读取时间内抑制写入干扰的磁性元件和非易失性存储装置。解决方案：根据实施例，磁性元件包括第一导电层，第二导电层，中间布线，第一层叠部分和第二层压部分。中间布线设置在第一导电层和第二导电层之间。第一层叠部件设置在第一导电层和中间布线之间。第一层压部件包括具有沿第一方向固定的磁化的第一铁磁层，层压在第一铁磁层上并具有可变磁化方向的第二铁磁层和设置在第一铁磁层和第二铁磁层之间的第一非磁性层层。第二层压部件设置在第二导电层和中间布线之间。第二层压部件包括具有可变磁化方向的第三铁磁层，层压在第三铁磁层上并具有沿第二方向固定的磁化的第四铁磁层和设置在第三铁磁层和第四铁磁层之间的第二非磁性层层。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2010182824A Method of manufacturing magnetic random access memory, and method of manufacturing embedded memory 审中-公开
标题翻译：制造磁性随机存取存储器的方法和制造嵌入式存储器的方法
公开(公告)号：JP2010182824A
公开(公告)日：2010-08-19
申请号：JP2009024102
申请日：2009-02-04
申请人： Toshiba Corp , 株式会社東芝
发明人： KAJIYAMA TAKESHI , ASAO YOSHIAKI , AMANO MINORU , TAKAHASHI SHIGEKI , IWAYAMA MASAYOSHI , SUGIURA KUNIAKI
IPC分类号： H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/12
CPC分类号： H01L43/12 , G11C11/161 , H01L27/228
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a magnetic random access memory and a method of manufacturing an embedded memory, capable of suppressing an alignment error of a pattern. SOLUTION: The method of manufacturing a magnetic random access memory includes: a step of forming a magnetic material 10 of a magnetoresistive effect element on a lower electrode 9; a step of forming an upper electrode 14 on the magnetic material; a step of applying a resist for nano-imprint lithography on the upper electrode; a step of forming a first pattern or a second pattern in the resist by bringing a first template 20 or a second template into contact with the resist to cure the resist, wherein the first pattern of the magnetoresistive effect element and the lower electrode are formed in the first template, and the second pattern of the magnetoresistive effect element and the upper electrode are formed in the second template; and a step of collectively patterning the magnetic material and the lower electrode by using the resist having the first pattern, or collectively patterning the magnetic material and the upper electrode by using the resist having the second pattern. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供能够抑制图案的对准误差的磁性随机存取存储器的制造方法和嵌入式存储器的制造方法。解决方案：制造磁随机存取存储器的方法包括：在下电极9上形成磁阻效应元件的磁性材料10的步骤; 在磁性材料上形成上部电极14的步骤; 在上电极上施加纳米压印光刻抗蚀剂的步骤; 通过使第一模板20或第二模板与抗蚀剂接触来固化抗蚀剂，在抗蚀剂中形成第一图案或第二图案的步骤，其中形成磁阻效应元件和下电极的第一图案在第二模板中形成第一模板和磁阻效应元件和上电极的第二图案; 以及通过使用具有第一图案的抗蚀剂来共同构图磁性材料和下电极的步骤，或者通过使用具有第二图案的抗蚀剂来共同构图磁性材料和上电极。版权所有（C）2010，JPO＆INPIT

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