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1. 发明公开

EP2691985A1 ELECTRONIC DEVICE AND ITS METHOD OF MANUFACTURE 有权转让
标题翻译： VERFAHREN ZU IHRER HERSTELLUNG的ELEKTRONISCHE VORRICHTUNG
公开(公告)号：EP2691985A1
公开(公告)日：2014-02-05
申请号：EP12719435.5
申请日：2012-03-30
申请人： Pragmatic Printing Ltd
发明人： PRICE, Richard , RAMSDALE, Catherine
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L21/268 , H01L21/428 , H01L29/6675 , H01L29/66757 , H01L29/66772 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696 , H01L51/0027 , H01L51/105
摘要： A method of manufacturing an electronic device comprises: providing a layer of semiconductor material comprising a first portion, a second portion, and a third portion, the third portion connecting the first portion to the second portion and providing a semiconductive channel for electrical current flow between the first and second portions; providing a gate terminal arranged with respect to said third portion such that a voltage may be applied to the gate terminal to control an electrical conductivity of said channel; and processing at least one of the first and second portions so as to have an electrical conductivity greater than an electrical conductivity of the channel when no voltage is applied to the gate terminal. In certain embodiments, the processing comprises exposing at least one of the first and second portions to electromagnetic radiation. The first and second portions may be laser annealed to increase their conductivities.
摘要翻译：一种制造电子器件的方法包括：提供包括第一部分，第二部分和第三部分的半导体材料层，第三部分将第一部分连接到第二部分，并提供半导体通道，用于在第一和第二部分; 提供相对于所述第三部分布置的栅极端子，使得可以向栅极端子施加电压以控制所述沟道的电导率; 以及当没有电压施加到所述栅极端子时，处理所述第一部分和所述第二部分中的至少一个，使得具有大于所述沟道的电导率的导电性。在某些实施例中，处理包括将第一和第二部分中的至少一个暴露于电磁辐射。第一和第二部分可以被激光退火以增加它们的电导率。

2. 发明公开

EP2453480A2 Amorphous oxide and field effect transistor 审中-公开
标题翻译： Amorphes Oxid und Feldeffekttstristor
公开(公告)号：EP2453480A2
公开(公告)日：2012-05-16
申请号：EP11009312.7
申请日：2005-11-09
申请人： CANON KABUSHIKI KAISHA , Tokyo Institute of Technology
发明人： Sano, Masafumi , Nakagawa, Katsumi , Hosono, Hideo , Kamiya, Toshio , Nomura, Kenji
IPC分类号： H01L29/786 , H01L21/428 , H01L21/363
CPC分类号： H01L29/78693 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L21/428 , H01L27/1225 , H01L27/124 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A novel amorphous oxide film applicable, for example, to an active layer of a TFT is provided. The amorphous oxide film has an electron carrier concentration of less than 10 18 /cm 3 at a temperature of 25° C, wherein the amorphous oxide is an oxide comprising In, Ga, and Zn. The amorphous oxide film comprises a microcrystal that is surrounded by said amorphous oxide; or
the oxide chemical composition changes in the layer thickness direction in the film interior such that there is a region with a first chemical composition and a region with a second chemical composition other than said first composition; or
the oxide comprises one type of element or a plurality of elements selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, and P; or
the oxide comprises at least one element selected from the group consisting of Ti, Ru, and F.
摘要翻译：提供了可应用于例如TFT的有源层的新颖的无定形氧化物膜。无定形氧化物膜在25℃的温度下具有小于10 18 / cm 3的电子载流子浓度，其中无定形氧化物是包含In，Ga和Zn的氧化物。无定形氧化物膜包括由所述无定形氧化物包围的微晶体; 或所述膜内部的层厚度方向的氧化物化学成分变化，使得存在具有第一化学组成的区域和除了所述第一组合物之外的具有第二化学组成的区域; 或所述氧化物包括选自Li，Na，Mn，Ni，Pd，Cu，Cd，C，N和P中的一种元素或多种元素; 或氧化物包含选自Ti，Ru和F中的至少一种元素。

3. 发明公开

EP0002109A1 A method for the preparation of thin photoconductive films and of solar cells employing said thin photoconductive films 失效
标题翻译：一种用于生产使用这种薄的光导层的薄的光导层和太阳能电池的方法。
公开(公告)号：EP0002109A1
公开(公告)日：1979-05-30
申请号：EP78300527.5
申请日：1978-10-23
申请人： IMPERIAL CHEMICAL INDUSTRIES PLC
发明人： Barlow, William Andrew , Jones, Keith , Rhodes, Maurice , Roughley, David James , Sherliker, Francis Raymond , Williams, Edward Watkin
IPC分类号： H01L21/477 , H01L21/368 , H01L31/18 , C25D13/02 , H01L21/428
CPC分类号： H01L51/4213 , H01L21/02422 , H01L21/02491 , H01L21/02557 , H01L21/02568 , H01L21/02628 , H01L21/318 , H01L21/428 , H01L21/477 , H01L31/03365 , H01L31/1828 , H01L51/426 , Y02E10/543 , Y02E10/549
摘要： Preparation of thin substantially pin-hole-free films of a semiconducting sulphide, sulphoselenide, selenide or telluride is achieved by the deposition of a film of the semiconductor and the application of heat preferentially to one surface of the film to establish a temperature differential between the surfaces of the film. The films may be employed in solid state devices and particularly in solar cells. In a solar cell the film (2), deposited on an electrically conducting substrate (1), forms a junction (4) with a semiconductor (3), which is in contact with an electrode (5).
摘要翻译：的半导体硫化物，sulphoselenide，硒化物或碲化物的薄基本上不含针孔的薄膜的制备是由半导体的膜和热优先于膜的一个表面上的应用程序的沉积实现建立之间的温度差该膜的表面。所述膜可以在固态装置，特别是在太阳能电池中使用。在太阳能电池中的膜（2）在电沉积上导电基底（1），形成了一个结（4）与半导体（3），其在接触与在电极（5）。

4. 发明公开

EP3010036A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUMMENTS UND HALBLEITERBAUELEMENT
公开(公告)号：EP3010036A1
公开(公告)日：2016-04-20
申请号：EP13886718.9
申请日：2013-06-14
申请人： Shindengen Electric Manufacturing Co., Ltd.
发明人： FUKUDA Yusuke
IPC分类号： H01L21/28 , H01L21/268 , H01L21/329 , H01L29/47 , H01L29/872
CPC分类号： H01L21/0485 , H01L21/02529 , H01L21/02664 , H01L21/268 , H01L21/428 , H01L29/0619 , H01L29/1608 , H01L29/45 , H01L29/47 , H01L29/6606 , H01L29/872
摘要： A method of manufacturing a semiconductor device includes the steps of: forming a semiconductor layer on a first main surface of a semiconductor substrate made of crystals having a wide band gap; forming lattice defects on a second main surface on a side opposite to the first main surface of the semiconductor substrate; and emitting a laser beam having a longer wavelength than an absorption edge wavelength which is a wavelength of a light having the lowest energy which the crystals absorb, to a lower surface of the semiconductor substrate after the step of forming the lattice defects; and forming an electrode on the second main surface of the semiconductor substrate after the step of emitting the laser beam.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在具有宽带隙的晶体制成的半导体衬底的第一主表面上形成半导体层; 在与半导体衬底的第一主表面相对的一侧上的第二主表面上形成晶格缺陷; 并且在形成晶格缺陷的步骤之后，将具有比作为晶体吸收的最低能量的光的波长的吸收边缘波长的波长长的激光发射到半导体衬底的下表面; 以及在发射激光束的步骤之后在半导体衬底的第二主表面上形成电极。

5. 发明授权

EP2455975B1 Field effect transistor with amorphous oxide 有权
标题翻译： Feldeffekttransistor mit amorphem氧化物
公开(公告)号：EP2455975B1
公开(公告)日：2015-10-28
申请号：EP11009311.9
申请日：2005-11-09
申请人： CANON KABUSHIKI KAISHA , Tokyo Institute of Technology
发明人： Sano, Masafumi , Nakagawa, Katsumi , Hosono, Hideo , Kamiya, Toshio , Nomura, Kenji
IPC分类号： H01L29/66 , H01L21/02 , H01L21/428 , H01L29/786
CPC分类号： H01L29/78693 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L21/428 , H01L27/1225 , H01L27/124 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A novel amorphous oxide film applicable, for example, to an active layer of a TFT is provided. The amorphous oxide film has an electron carrier concentration of less than 10 18 /cm 3 at a temperature of 25° C, wherein the amorphous oxide is any one selected from the group consisting of an oxide containing In, Zn, and Sn; an oxide containing In and Zn; an oxide containing In and Sn; and an oxide containing In, Zn, and Ga. The oxide comprises one type of element or a plurality of elements selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, and P; or at least one element selected from the group consisting of Ti, Ru, and F.
摘要翻译：提供了可应用于例如TFT的有源层的新颖的无定形氧化物膜。无定形氧化物膜在25℃的温度下的电子载流子浓度小于10 18 / cm 3，其中非晶氧化物是选自含有In，Zn和Sn的氧化物中的任何一种; 含有In和Zn的氧化物; 含有In和Sn的氧化物; 氧化物含有选自Li，Na，Mn，Ni，Pd，Cu，Cd，C，N和P中的一种元素或多种元素; 或选自Ti，Ru和F中的至少一种元素。

6. 发明公开

EP2576860A4 METHOD FOR PROVIDING LATERAL THERMAL PROCESSING OF THIN FILMS ON LOW-TEMPERATURE SUBSTRATES 有权
标题翻译：方法提供了薄膜的横向热处理对耐低温基底
公开(公告)号：EP2576860A4
公开(公告)日：2015-04-08
申请号：EP11790412
申请日：2011-06-02
申请人： NCC NANO LLC
发明人： SCHRODER KURT A , WENZ ROBERT P
IPC分类号： C23C16/56 , B29C35/02 , B29C35/08 , H01L21/02 , H01L21/20 , H01L27/12 , H01L29/66 , H01L29/786
CPC分类号： H01L21/428 , B29C35/0266 , B29C35/0272 , B29C35/0805 , B29C2035/0855 , B29C2035/0877 , H01L21/02422 , H01L21/02439 , H01L21/02532 , H01L21/02667 , H01L21/02686 , H01L21/02689 , H01L27/1281 , H01L27/1285 , H01L29/66742 , H01L29/66757 , H01L29/78603

7. 发明公开

EP2715786A4 METAL OXIDE TFT WITH IMPROVED SOURCE/DRAIN CONTACTS 审中-公开
标题翻译：金属氧化物TFT，具有改善的源/出口接点
公开(公告)号：EP2715786A4
公开(公告)日：2015-01-07
申请号：EP12796733
申请日：2012-05-16
申请人： CBRITE INC
发明人： SHIEH CHAN-LONG , YU GANG , FOONG FATT
IPC分类号： H01L21/36 , H01L21/44 , H01L21/465 , H01L29/45 , H01L29/786
CPC分类号： H01L29/7869 , H01L21/428 , H01L29/45 , H01L29/66969 , H01L29/78606

8. 发明公开

EP2398045A2 Modified cadmium telluride layer, a method of modifying a cadmium telluride layer, and a thin film device having a cadmium telluride layer 审中-公开
标题翻译：改性碲化镉，碲化镉，以及用于修改具有碲化镉的薄膜器件的方法
公开(公告)号：EP2398045A2
公开(公告)日：2011-12-21
申请号：EP11169723.1
申请日：2011-06-14
申请人： PrimeStar Solar, Inc
发明人： Frey, Jonathan M.
IPC分类号： H01L21/36 , H01L21/02
CPC分类号： H01L31/1828 , H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02491 , H01L21/02502 , H01L21/02562 , H01L21/02667 , H01L21/02675 , H01L21/428 , H01L29/2203 , H01L31/022425 , H01L31/022466 , H01L31/0296 , H01L31/073 , H01L31/1864 , Y02E10/543 , Y02P70/521
摘要： A layer (209) including modified cadmium telluride and unmodified cadmium telluride disposed within the cadmium telluride layer. The modified area (513) includes a concentration of telluride that is greater than the concentration of telluride in the unmodified cadmium telluride area. The modified area (513) also includes a hexagonal close packed crystal structure. A method for modifying a cadmium telluride layer and a thin film device are also disclosed.
摘要翻译：包括修饰的碲化镉，镉层（209）碲碲化镉层内未修改地设置。修改后的区域（513）包括碲化物的浓度没有比碲化在未修改的碲化镉区域中的浓度大。修改后的区域（513）因此包括密排六方晶体结构。因此，一个用于修改碲化镉层和薄膜器件制造方法是游离缺失盘。

9. 发明公开

EP1770788A3 Semiconductor device having oxide semiconductor layer and manufacturing method thereof 审中-公开
标题翻译： Halbleiterbauelement mit Oxidhalbleiterschicht undzugehörigesHerstellungsverfahren
公开(公告)号：EP1770788A3
公开(公告)日：2011-09-21
申请号：EP06019112.9
申请日：2006-09-12
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Akimoto, Kengo , Honda, Tatsuya , Sone, Norihito
IPC分类号： H01L29/786 , H01L21/77
CPC分类号： H01L29/78696 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02266 , H01L21/02565 , H01L21/02631 , H01L21/428 , H01L21/465 , H01L21/477 , H01L27/1225 , H01L27/1285 , H01L29/04 , H01L29/045 , H01L29/7869
摘要： An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
摘要翻译：本发明的目的是提供一种半导体器件及其制造方法，该半导体器件的制造工艺不复杂，可以通过以氧化锌为代表的氧化物半导体膜形成薄膜晶体管来降低成本。对于半导体器件，在基板上形成栅电极; 形成覆盖栅电极的栅极绝缘膜; 在栅绝缘膜上形成氧化物半导体膜; 并且在所述氧化物半导体膜上形成第一导电膜和第二导电膜。氧化物半导体膜在沟道区域中至少具有结晶化区域。

10. 发明公开

EP1812969A2 AMORPHOUS OXIDE AND FIELD EFFECT TRANSISTOR 有权
标题翻译：无定形氧化物场效应晶体管
公开(公告)号：EP1812969A2
公开(公告)日：2007-08-01
申请号：EP05806969.1
申请日：2005-11-09
申请人： CANON KABUSHIKI KAISHA , TOKYO INSTITUTE OF TECHNOLOGY
发明人： SANO, Masafumi, c/o CANON KABUSHIKI KAISHA, , NAKAGAWA, Katsumi, c/o CANON KABUSHIKI KAISHA, , HOSONO, Hideo, c/o TOKYO INSTITUTE OF TECHNOLOGY, , KAMIYA, Toshio, c/o TOKYO INSTITUTE OF TECHNOLOGY, , NOMURA, Kenji, c/o TOKYO INSTITUTE OF TECHNOLOGY,
IPC分类号： H01L29/786 , H01L21/428 , H01L21/363
CPC分类号： H01L29/78693 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L21/428 , H01L27/1225 , H01L27/124 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A novel amorphous oxide film applicable, for example, to an active layer of a TFT is provided. The amorphous oxide film has an electron carrier concentration of less than 10 18 /cm 3 at a temperature of 25° C, wherein the amorphous oxide is any one selected from the group consisting of an oxide containing In, Zn, and Sn; an oxide containing In and Zn; an oxide containing In and Sn; and an oxide containing In, Zn, and Ga. The oxide comprises one type of element or a plurality of elements selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, and P; or at least one element selected from the group consisting of Ti, Ru, and F.

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