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    • 1. 发明公开
    • ELECTRONIC DEVICE AND ITS METHOD OF MANUFACTURE
    • VERFAHREN ZU IHRER HERSTELLUNG的ELEKTRONISCHE VORRICHTUNG
    • EP2691985A1
    • 2014-02-05
    • EP12719435.5
    • 2012-03-30
    • Pragmatic Printing Ltd
    • PRICE, RichardRAMSDALE, Catherine
    • H01L29/786H01L29/66
    • H01L21/268H01L21/428H01L29/6675H01L29/66757H01L29/66772H01L29/66969H01L29/78618H01L29/7869H01L29/78696H01L51/0027H01L51/105
    • A method of manufacturing an electronic device comprises: providing a layer of semiconductor material comprising a first portion, a second portion, and a third portion, the third portion connecting the first portion to the second portion and providing a semiconductive channel for electrical current flow between the first and second portions; providing a gate terminal arranged with respect to said third portion such that a voltage may be applied to the gate terminal to control an electrical conductivity of said channel; and processing at least one of the first and second portions so as to have an electrical conductivity greater than an electrical conductivity of the channel when no voltage is applied to the gate terminal. In certain embodiments, the processing comprises exposing at least one of the first and second portions to electromagnetic radiation. The first and second portions may be laser annealed to increase their conductivities.
    • 一种制造电子器件的方法包括:提供包括第一部分,第二部分和第三部分的半导体材料层,第三部分将第一部分连接到第二部分,并提供半导体通道,用于在 第一和第二部分; 提供相对于所述第三部分布置的栅极端子,使得可以向栅极端子施加电压以控制所述沟道的电导率; 以及当没有电压施加到所述栅极端子时,处理所述第一部分和所述第二部分中的至少一个,使得具有大于所述沟道的电导率的导电性。 在某些实施例中,处理包括将第一和第二部分中的至少一个暴露于电磁辐射。 第一和第二部分可以被激光退火以增加它们的电导率。