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1. 发明公开

EP2704211A1 Direct connection of lead bar to conductive ribbon in a thin film photovoltaic device 审中-公开
标题翻译：在薄膜光伏器件中将引线棒直接连接到导电带
公开(公告)号：EP2704211A1
公开(公告)日：2014-03-05
申请号：EP13181238.0
申请日：2013-08-21
申请人： PrimeStar Solar, Inc
发明人： Clark, Kim James , Reed, Max William , Crume, Bradley Robert , Berens, Troy Alan
IPC分类号： H01L31/048
CPC分类号： H02S40/34
摘要： Thin film photovoltaic devices 10 that include at least one lead bar 84, 86 extending through a connection aperture 74, 76 defined in the encapsulation substrate 70 are provided. The photovoltaic device can include: a transparent substrate 12; a plurality of photovoltaic cells 28 on the transparent substrate; a first conductive ribbon 60 electrically connected to a first photovoltaic cell; an encapsulation substrate 70 laminated to the transparent substrate 12 such that the plurality of photovoltaic cells 28 and the conductive ribbon 60 are positioned between the transparent substrate 12 and the encapsulation substrate 70; and, a first lead bar 84 extending through a first connection aperture 74 defined in the encapsulation substrate 70. The first lead bar 84 is electrically connected to the first conductive ribbon 60. For example, a meltable conductive material can be connected to the first lead bar 84 and to the first conductive ribbon 60 to establish an electrical connection therebetween. Methods are also provided for electrically connecting a lead to a thin film photovoltaic device 10.
摘要翻译：提供了包括延伸穿过封装衬底70中限定的连接孔74,76的至少一个引线棒84,86的薄膜光伏器件10。光伏器件可以包括：透明基板12; 在透明基板上的多个光伏电池28; 电连接到第一光伏电池的第一导电带60; 封装基板70，其层叠到透明基板12上，使得多个光伏电池28和导电带60位于透明基板12和封装基板70之间; 以及延伸穿过封装衬底70中限定的第一连接孔74的第一引线棒84.第一引线棒84电连接到第一导电带60.例如，可熔导电材料可以连接到第一引线杆84和第一导电带60之间建立电连接。还提供了用于将引线电连接到薄膜光伏器件10的方法。

2. 发明公开

EP2383792A3 Cadmium Sulfide Layers for Use in Cadmium Telluride Based Thin Film Photovoltaic Devices and Methods of their Manufacture 审中-公开
标题翻译：在碲化镉使用硫化镉层系薄膜光伏器件及其制造方法
公开(公告)号：EP2383792A3
公开(公告)日：2013-03-06
申请号：EP11163496.0
申请日：2011-04-21
申请人： PrimeStar Solar, Inc
发明人： Drayton, Jennifer Ann , Peabody, Scott Daniel-Feldman , Gossman, Robert Dwayne
IPC分类号： H01L31/0296 , H01L31/18 , H01L31/072 , H01L31/073
CPC分类号： H01L31/073 , H01L31/0296 , H01L31/1836 , Y02E10/543 , Y02P70/521
摘要： Cadmium telluride thin film photovoltaic devices 10 are generally provided. The device 10 can include a substrate 12, a transparent conductive oxide layer 14 on the substrate 12; a resistive transparent buffer layer 16 on the transparent conductive oxide layer 14; a cadmium sulfide layer 18 on the resistive transparent buffer layer 16; a cadmium telluride layer 20 on the cadmium sulfide layer 18; and, a back contact layer 22 on the cadmium telluride layer 20. The cadmium sulfide layer 18 can include oxygen in a molar percentage greater than 0 % to about 20 %. In one particular embodiment, a second cadmium sulfide layer 19 substantially free from oxygen can be positioned between the cadmium sulfide layer 18 and the cadmium telluride layer 20.
Methods of depositing a cadmium sulfide layer 18 on a substrate 12 and methods of manufacturing a cadmium telluride thin film photovoltaic device 10 are also generally provided.

3. 发明公开

EP2381477A3 Method for increasing the working surface area of a photovoltaic (pv)module and associated substrates 有权转让
标题翻译：上的Photovoltaikomodul和相关底物增加有效表面积的方法
公开(公告)号：EP2381477A3
公开(公告)日：2013-01-09
申请号：EP11162970.5
申请日：2011-04-19
申请人： PrimeStar Solar, Inc
发明人： LITTLE, Edwin Jackson , REED, Max William , PAULMAN, Jason Scott
IPC分类号： H01L27/142 , H01L31/18
CPC分类号： H01L31/0463 , Y02E10/50 , Y10T428/24612
摘要： A method for processing substrates (10) in the formation of photovoltaic (PV) modules, the substrates (10) having a plurality of thin film layers (18, 20, 22) deposited thereon. The method includes determining the geometric center (24) of the substrate and performing subsequent processing steps for defining individual cells (32) on the substrate using the geometric center of the substrate as a starting reference point for such processing steps.

4. 发明公开

EP2448004A1 Intermixing of cadmium sulfide layers and cadmium telluride layers for thin film photovoltaic devices and methods of their manufacture 审中-公开
标题翻译：硫化镉层的混合物中，并用于Cadmiumtelluridschichten薄膜光伏器件及其制造方法
公开(公告)号：EP2448004A1
公开(公告)日：2012-05-02
申请号：EP11185800.7
申请日：2011-10-19
申请人： PrimeStar Solar, Inc
发明人： Feldman-Peabody, Scott Daniel , Pavol, Mark Jeffrey
IPC分类号： H01L31/0296 , H01L31/18 , H01L31/073 , C23C14/06
CPC分类号： C23C14/0057 , C23C14/0084 , C23C14/024 , C23C14/0629 , C23C14/3464 , C23C14/5806 , H01L31/065 , H01L31/073 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： Cadmium telluride thin film photovoltaic devices 10 are generally disclosed including an intermixed layer 19 of cadmium sulfide and cadmium telluride between a cadmium sulfide layer 18 and a cadmium telluride layer 20. The intermixed layer 19 generally has an increasing tellurium concentration and decreasing sulfur concentration extending in a direction from the cadmium sulfide layer 18 towards the cadmium telluride layer 20. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device 10 having an intermixed layer 19 of cadmium sulfide and cadmium telluride.
摘要翻译：碲化镉薄膜光伏器件10是游离缺失包含在硫化镉和硫化镉层18和碲化镉层20之间的碲化互混层19基因反弹圆盘的混合间层19基因集会具有增加的碲浓度和降低的硫浓度延伸所以从硫化镉层18向碲化镉层的方向20的方法是游离缺失用于制造具有在硫化镉和碲化镉的互混层19基于碲化镉薄膜光伏器件10基因反弹光盘。

5. 发明公开

EP2423969A2 Methods of forming an anisotropic conductive layer as a back contact in thin film photovoltaic devices 审中-公开
标题翻译：一种用于制造各向异性导电膜作为薄膜光伏器件的背接触过程
公开(公告)号：EP2423969A2
公开(公告)日：2012-02-29
申请号：EP11178016.9
申请日：2011-08-18
申请人： PrimeStar Solar, Inc
发明人： Lucas, Tammy Jane , Gossman, Robert Dwayne , Feldman-Peabody, Scott Daniel
IPC分类号： H01L31/0224
CPC分类号： H01L31/022425 , H01L31/0463 , H01L31/073 , Y02E10/543
摘要： Thin film photovoltaic devices 10 are generally provided. The device 10 can include a transparent conductive oxide layer 14 on a glass substrate 12, an n-type thin film layer 18 on the transparent conductive layer 14, and a p-type thin film layer 20 on the n-type layer 18. The n-type thin film layer 18 and the p-type thin film layer 20 form a p-n junction. An anisotropic conductive layer 22 is applied on the p-type thin film layer 20, and includes a polymeric binder and a plurality of conductive particles 23. A metal contact layer 24 can then be positioned on the anisotropic conductive layer 22.
摘要翻译：薄膜光伏器件10是基因反弹提供。该装置10可以包括在玻璃基板12的透明导电氧化物层14，透明导电层14上的n型薄膜层18的18，和n型层上的p型薄膜层20的 n型薄膜层18和p型薄膜层20形成pn结。各向异性导电层22施加了p型薄膜层20上，并且包括聚合物粘合剂和导电性颗粒23，金属接触层24的多元然后可以在各向异性导电层22日定位

6. 发明公开

EP2403014A1 Transparent electrically conductive layer and method for forming same 审中-公开
标题翻译： Transparente elektrisch leitende Schicht und Herstellungsverfahrendafür
公开(公告)号：EP2403014A1
公开(公告)日：2012-01-04
申请号：EP11172077.7
申请日：2011-06-30
申请人： PrimeStar Solar, Inc
发明人： Frey, Jonathan Mack
IPC分类号： H01L31/18
CPC分类号： H01L31/022466 , C23C14/086 , C23C14/5813 , H01L31/073 , H01L31/1884 , Y02E10/543
摘要： A method for forming a transparent electrically conductive layer. The method includes providing a layer comprising cadmium, tin, and oxygen. Concentrated electromagnetic energy (503) is directed from an energy source (501) to at least one portion of the layer to locally heat the at least a portion of the layer. The layer is crystallized to a cadmium-tin oxide ceramic. A photovoltaic cell (107) having the laser crystallized cadmium-tin oxide ceramic and a composition of matter are also disclosed.
摘要翻译：一种形成透明导电层的方法。该方法包括提供包含镉，锡和氧的层。集中电磁能（503）从能量源（501）引导到层的至少一部分以局部加热该层的至少一部分。该层结晶成镉 - 锡氧化物陶瓷。还公开了具有激光结晶的镉 - 锡氧化物陶瓷和物质组成的光伏电池（107）。

7. 发明公开

EP2381012A1 Modular system for high-rate deposition of thin film layers on photovoltaic module substrates 审中-公开
标题翻译： Modulares System zur Hochleistungsablagerung vonDünnfilmschichtenauf Photovoltaikmodulsubstraten
公开(公告)号：EP2381012A1
公开(公告)日：2011-10-26
申请号：EP11163131.3
申请日：2011-04-20
申请人： PrimeStar Solar, Inc
发明人： Black, Russell Weldon , Murphy, Brian Robert
IPC分类号： C23C14/56
CPC分类号： C23C14/568
摘要： A system (100) and related method for deposition of multiple thin film layers on photovoltaic (PV) module substrates (12) includes a first processing side (102) wherein the substrates are conveyed in a first direction (103) for deposition of a first thin film layer on the substrates. A second processing side (110) is operably disposed relative to the first processing side such that substrates exiting the first processing side are subsequently conveyed in a second direction (111) through the second processing side for deposition of a second thin film layer on the first thin film layer. A first transfer station (118) is operably disposed between the first processing side and the second processing side to receive the substrates from an exit (108) of the first processing side and to introduce the substrates into an entry (114) of the second processing side such that the substrates are continuously moved through the first and second processing sides for deposition of multiple thin film layers thereon.
摘要翻译：用于在光伏（PV）模块基板（12）上沉积多个薄膜层的系统（100）和相关方法包括第一处理侧（102），其中基板在第一方向（103）上被输送以沉积第一基片上的薄膜层。第二处理侧（110）可相对于第一处理侧可操作地设置，使得离开第一处理侧的基板随后通过第二处理侧沿第二方向（111）传送，以在第一处理侧上沉积第二薄膜层薄膜层。第一传送站（118）可操作地设置在第一处理侧和第二处理侧之间，以从第一处理侧的出口（108）接收衬底，并将衬底引入第二处理的入口（114）使得基板连续移动通过第一和第二处理侧，以在其上沉积多个薄膜层。

8. 发明公开

EP2371989A1 Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device 有权
标题翻译：一种用于在基于碲化镉的薄膜光伏器件形成用于导电透明Oxidfolienschicht方法
公开(公告)号：EP2371989A1
公开(公告)日：2011-10-05
申请号：EP11160306.4
申请日：2011-03-29
申请人： PrimeStar Solar, Inc
发明人： Feldman-Peaboy, Scott Daniel , Drayton, Jennifer Ann , Gossman, Robert Dwayne , Sadeghi, Mehran
IPC分类号： C23C14/08 , C23C14/34 , C23C14/58 , H01L31/18
CPC分类号： C23C14/086 , C23C14/34 , C23C14/5806 , H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02491 , H01L21/02502 , H01L21/02557 , H01L21/02631 , H01L31/073 , H01L31/1836 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要： Methods are generally provided for forming a conductive oxide layer (14) on a substrate (12). In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (14) on a substrate (12) at a sputtering temperature from about 10° C to about 100° C. A cap layer (15) including cadmium sulfide can be deposited directly on the transparent conductive oxide layer (14). The transparent conductive oxide layer (14) can be annealed at an anneal temperature from about 450° C to about 650° C.
Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device (10). An intermediate substrate is also generally provided for use to manufacture a thin film photovoltaic device (10).
摘要翻译：提供了用于在衬底（12）上形成通常的导电性氧化物层（14）的方法。在一个具体实施方案中，该方法可以包括从约10℃在溅射温度的基板（12）上溅镀透明导电氧化物层（14）至约100℃包含硫化镉的帽层（15）可以是所述透明导电氧化物层（14）上直接沉积。所述透明导电氧化物层（14）可在退火在退火温度从约450℃至约650℃的方法，因此提供了用于制造基于碲化镉的薄膜光伏器件（10）基因的反弹。因此中间基材是提供一种用于制造薄膜光伏装置（10）基因的反弹。

9. 发明公开

EP2706579A1 Support structure for photovoltaic module mounting and methods of its use 审中-公开
标题翻译： StützstrukturfürPhotovoltaikmodul und Verfahren zu ihrer Verwendung
公开(公告)号：EP2706579A1
公开(公告)日：2014-03-12
申请号：EP13183224.8
申请日：2013-09-05
申请人： PrimeStar Solar, Inc
发明人： Reed, Max William
IPC分类号： H01L31/042 , F24J2/52 , F24J2/46
CPC分类号： H02S20/00 , F24S25/40 , F24S2025/601 , F24S2025/805 , F24S2080/09 , H02S20/10 , H02S20/30 , Y02E10/47 , Y02E10/50
摘要： Photovoltaic module 100 are provided, along with method of their construction. The photovoltaic module 100 includes a window substrate 104; a photovoltaic material 106; and an encapsulation substrate 102 laminated to the window substrate 104 with the photovoltaic material 106 positioned therebetween. A support structure 120 is mounted onto a back surface 103 of the encapsulation substrate 102 to inhibit bowing of the encapsulation substrate 102. The support structure 120 can be indirectly mounted onto the back surface on hundred and 3 with an intermediate material (e.g., an adhesive strip) positioned therebetween. The support structure 120 can include ridges 126 that define peaks 128 and valleys 130 that are configured to inhibit bowing of the support structure 120.
摘要翻译：提供光伏组件100及其构造方法。光伏模块100包括窗口基板104; 光伏材料106; 以及封装基板102，其中光伏材料106位于其间，层压到窗基板104上。支撑结构120安装在封装衬底102的背表面103上以抑制封装衬底102的弯曲。支撑结构120可以间接地安装在具有中间材料（例如，粘合剂）的百和三的背表面上条）。支撑结构120可以包括限定峰128和谷130的脊126，其被构造成禁止支撑结构120的弯曲。

10. 发明公开

EP2704203A2 Use of an inert graphite layer in a back contact of a photovoltaic cell 审中-公开
标题翻译： Verwendung einer惰性石墨在einemRückkontakteiner photovoltaischen Zelle
公开(公告)号：EP2704203A2
公开(公告)日：2014-03-05
申请号：EP13181237.2
申请日：2013-08-21
申请人： PrimeStar Solar, Inc
发明人： Clark, Laura Anne , Lucas, Tammy Jane , Metzger, Wyatt Keith
IPC分类号： H01L31/0224 , H01L31/0296 , H01L31/0392 , H01L31/073
CPC分类号： H01L31/022425 , H01L31/02963 , H01L31/03925 , H01L31/073 , Y02E10/543 , Y02P70/521
摘要： Photovoltaic devices 10 are provided that include a transparent superstrate 12; a transparent conductive oxide 14 on the transparent superstrate; an n-type window layer 18 on the transparent superstrate; a p-type absorber layer 20 on the n-type window layer; and an inert conductive paste layer 23 on the back surface of the p-type absorber layer. The p-type absorber layer 20 includes cadmium telluride, and defines a back surface positioned opposite from the n-type window layer 18 that is tellurium enriched. The inert conductive paste layer 23 is substantially free from an acid or acid generator. Methods are also generally provided of forming such a back contact.
摘要翻译：提供了包括透明覆层12的光伏器件10; 透明覆盖层上的透明导电氧化物14; 在透明覆盖物上的n型窗口层18; n型窗口层上的p型吸收层20; 以及p型吸收体层的背面上的惰性导电性糊料层23。 p型吸收层20包括碲化镉，并且限定与富含碲的n型窗口层18相对定位的背面。惰性导电膏层23基本上不含酸或酸发生剂。还通常提供形成这种背接触的方法。

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