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1. 发明授权

EP4254512B1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY CELL INCLUDING THE SAME 有权
公开(公告)号：EP4254512B1
公开(公告)日：2024-08-21
申请号：EP22217287.6
申请日：2022-12-30
IPC分类号： H01L29/786 , H01L29/78 , H01L29/66
CPC分类号： H01L29/78696 , H01L29/78693 , H01L29/66969 , H01L29/42384 , H01L29/78603 , H01L29/78648 , H10B12/05

2. 发明授权

EP2506308B1 Method for manufacturing amorphous oxide thin film transistor 有权
标题翻译：非晶氧化物薄膜晶体管的制造方法
公开(公告)号：EP2506308B1
公开(公告)日：2017-09-13
申请号：EP12161178.4
申请日：2012-03-26
申请人： BOE Technology Group Co., Ltd.
发明人： Liu, Xiaodi , Sun, Li , Chen, Haijing
IPC分类号： H01L29/786 , H01L29/66 , H01L21/02 , H01L21/027 , H01L21/477 , H01L21/441 , H01L21/467
CPC分类号： H01L29/78693 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L21/0273 , H01L21/441 , H01L21/467 , H01L21/477 , H01L29/66969 , H01L29/78618

3. 发明公开

EP2316132A4 FIELD EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM 有权
标题翻译： FELDEFFEKTRANSISTOR，ANZEIGEELEMENT，BILDANZEIGEVORRICHTUNG UND SYSTEMDAFÜR
公开(公告)号：EP2316132A4
公开(公告)日：2017-08-23
申请号：EP09808285
申请日：2009-08-13
申请人： RICOH CO LTD
发明人： UEDA NAOYUKI , ABE YUKIKO , KONDO HIROSHI , NAKAMURA YUKI , SONE YUJI
IPC分类号： H01L29/786 , G02F1/1368 , G09F9/30 , G09G3/3258 , G09G3/36 , H01L27/12 , H01L29/24
CPC分类号： H01L29/7869 , G09G3/3258 , G09G3/3655 , G09G2320/043 , H01L27/1225 , H01L29/04 , H01L29/24 , H01L29/78693

4. 发明公开

EP3005420A4 STABLE HIGH MOBILITY MOTFT AND FABRICATION AT LOW TEMPERATURE 审中-公开
标题翻译：高迁移率稳定MOTFT和这样的低温生产情况
公开(公告)号：EP3005420A4
公开(公告)日：2017-01-04
申请号：EP14801432
申请日：2014-05-07
申请人： CBRITE INC
发明人： SHIEH CHAN-LONG , YU GANG , FOONG FATT , MUSOLF JUERGEN
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/66969 , H01L21/02063 , H01L21/02565 , H01L21/02631 , H01L21/76805 , H01L21/76814 , H01L21/76895 , H01L27/1225 , H01L29/247 , H01L29/42384 , H01L29/517 , H01L29/518 , H01L29/66742 , H01L29/78603 , H01L29/78606 , H01L29/78618 , H01L29/78693 , H01L29/78696 , H01L2021/775

5. 发明授权

EP2685505B1 THIN-FILM TRANSISTOR AND DISPLAY DEVICE 失效
标题翻译：薄膜晶体管及显示装置
公开(公告)号：EP2685505B1
公开(公告)日：2016-12-21
申请号：EP12757768.2
申请日：2012-03-02
申请人： Sharp Kabushiki Kaisha
发明人： KATOH, Sumio , KITAKADO, Hidehito
IPC分类号： H01L29/786 , H01L21/336 , H01L29/417 , H01L27/12 , H01L33/00
CPC分类号： H01L29/78693 , H01L27/1222 , H01L29/41733 , H01L29/78609 , H01L29/78618 , H01L29/7869 , H01L29/78696 , H01L33/0041

6. 发明公开

EP2600395A4 PRECURSOR COMPOSITION FOR FORMING AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER, AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR DEVICE 有权转让
标题翻译： FOR的形成非晶金属氧化物半导体层，非晶金属氧化物半导体层，方法的前组合物用于制作半导体器件，
公开(公告)号：EP2600395A4
公开(公告)日：2016-05-25
申请号：EP11812474
申请日：2011-07-26
申请人： NISSAN CHEMICAL IND LTD
发明人： HIROI YOSHIOMI , MAEDA SHINICHI
IPC分类号： H01L21/368 , H01L29/786
CPC分类号： H01L29/247 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02628 , H01L29/78693
摘要： The invention provides a precursor composition for forming an amorphous metal oxide semiconductor layer, containing a metal salt, a primary amide, and a water-based solution. An amorphous metal oxide semiconductor layer is formed by use of the composition.

7. 发明公开

EP3005420A2 STABLE HIGH MOBILITY MOTFT AND FABRICATION AT LOW TEMPERATURE 审中-公开
标题翻译：维多利亚大卫·霍尔·迈尔斯
公开(公告)号：EP3005420A2
公开(公告)日：2016-04-13
申请号：EP14801432.7
申请日：2014-05-07
申请人： CBrite Inc.
发明人： SHIEH, Chan-long , YU, Gang , FOONG, Fatt , MUSOLF, Juergen
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66969 , H01L21/02063 , H01L21/02565 , H01L21/02631 , H01L21/76805 , H01L21/76814 , H01L21/76895 , H01L27/1225 , H01L29/247 , H01L29/42384 , H01L29/517 , H01L29/518 , H01L29/66742 , H01L29/78603 , H01L29/78606 , H01L29/78618 , H01L29/78693 , H01L29/78696 , H01L2021/775
摘要： A method of fabricating a stable high mobility amorphous MOTFT includes a step of providing a substrate with a gate formed thereon and a gate dielectric layer positioned over the gate. A carrier transport structure is deposited by sputtering on the gate dielectric layer. The carrier transport structure includes a layer of amorphous high mobility metal oxide adjacent the gate dielectric and a relatively inert protective layer of material deposited on the layer of amorphous high mobility metal oxide both deposited without oxygen and
in situ . The layer of amorphous metal oxide has a mobility above 40 cm
2 /Vs and a carrier concentration in a range of approximately 10
18 cm
-3 to approximately 5xl0
19 cm
-3 . Source/drain contacts are positioned on the protective layer and in electrical contact therewith.
摘要翻译：制造稳定的高迁移率无定形MOTFT的方法包括提供其上形成有栅极的基板和位于栅极上方的栅介质层的步骤。通过溅射将载流子传输结构沉积在栅极介电层上。载流子传输结构包括邻近栅极电介质的非晶高迁移率金属氧化物层，以及沉积在无氧和原位沉积的无定形高迁移率金属氧化物层上的相对惰性的材料保护层。无定形金属氧化物层的迁移率高于40cm 2 / Vs，载流子浓度在约1018cm-3至约5×1019cm-3的范围内。源极/漏极触点位于保护层上并与其接触。

8. 发明公开

EP2880690A4 OXIDE SEMICONDUCTOR STACKED FILM AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：氧化物半导体箔和半导体元件
公开(公告)号：EP2880690A4
公开(公告)日：2016-03-30
申请号：EP13826223
申请日：2013-07-25
申请人： SEMICONDUCTOR ENERGY LAB
发明人： YAMAZAKI SHUNPEI , TSUBUKU MASASHI , WATANABE RYOSUKE , OOTA MASASHI , ISHIHARA NORITAKA , INOUE KOKI
IPC分类号： H01L29/786 , H01L21/66 , H01L29/10 , H01L29/423
CPC分类号： H01L29/1054 , H01L22/14 , H01L29/247 , H01L29/42356 , H01L29/42384 , H01L29/78606 , H01L29/7869 , H01L29/78693 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10−3/cm in an energy range of 1.5 eV to 2.3 eV.

9. 发明公开

EP2988335A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE, AND DISPLAY APPARATUS 有权
标题翻译：薄膜晶体管及其制造方法，阵列基板和显示装置
公开(公告)号：EP2988335A1
公开(公告)日：2016-02-24
申请号：EP13844527.5
申请日：2013-07-02
申请人： BOE Technology Group Co., Ltd.
发明人： LIU, Xiang , WANG, Gang , XUE, Jianshe
IPC分类号： H01L29/786 , H01L21/28
CPC分类号： H01L29/78606 , H01L21/441 , H01L27/1225 , H01L27/1259 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78693
摘要： A thin film transistor and method for manufacturing the same, an array substrate and a display device are disclosed. The thin film transistor comprises a substrate; a gate electrode, a source electrode, a drain electrode and a semiconductor layer formed on the substrate; a gate insulating layer between the gate electrode and the semiconductor layer or between the gate electrode and the source and drain electrodes; an etching stop layer between the semiconductor layer and the source and drain electrodes having a source contact hole and a drain contact hole therein; and a source buffer layer between the source electrode and the semiconductor layer and a drain buffer layer between the drain electrode and the semiconductor layer. The source and drain electrodes are metal Cu electrodes, and the source and drain buffer layers are Cu alloy layer. The formation of the source and drain buffer layer improves the adhesion of the source and drain electrodes thereon to the semiconductor layer therebeneath, and thus improves the performance of the TFT and image quality.
摘要翻译：公开了一种薄膜晶体管及其制造方法，阵列基板和显示装置。薄膜晶体管包括衬底; 形成在基板上的栅电极，源电极，漏电极和半导体层; 栅电极与半导体层之间或栅电极与源电极和漏电极之间的栅极绝缘层; 在所述半导体层与所述源极和漏极之间具有源极接触孔和漏极接触孔的蚀刻停止层; 以及源电极和半导体层之间的源极缓冲层以及漏电极和半导体层之间的漏极缓冲层。源极和漏极是金属Cu电极，源极和漏极缓冲层是Cu合金层。源极和漏极缓冲层的形成改善了其上的源电极和漏电极对其下方的半导体层的附着，因此改善了TFT和图像质量的性能。

10. 发明授权

EP1737044B1 AMORPHOUS OXIDE AND THIN FILM TRANSISTOR 有权
标题翻译：非晶氧化物及薄膜电晶体
公开(公告)号：EP1737044B1
公开(公告)日：2014-12-10
申请号：EP05719601.6
申请日：2005-02-28
申请人： Japan Science and Technology Agency
发明人： HOSONO, HIDEO , HIRANO, MASAHIRO , OTA, HIROMICHI , KAMIYA, TOSHIO Room 207 Monarch-Mizonokuchi III , NOMURA, KENJI
IPC分类号： H01L29/786 , G02F1/1345 , G02F1/1368 , H01L21/363 , C23C14/00 , C23C14/08 , C23C14/34 , H01L21/02 , C23C14/28 , H01L27/12
CPC分类号： H01L29/78696 , C23C14/0021 , C23C14/086 , C23C14/28 , C23C14/3414 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/7869 , H01L29/78693
摘要： The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 18 /cm 3 , and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 10 18 /cm 3 is used in the channel layer 2.

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