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1. 发明公开

EP1009046A3 Light emitting element array, exposure device and image forming apparatus 有权
标题翻译： on den den den den den t t t t t t t t t t t t t t t t t
公开(公告)号：EP1009046A3
公开(公告)日：2000-11-22
申请号：EP99308289.0
申请日：1999-10-20
申请人： CANON KABUSHIKI KAISHA
发明人： Nagase, Yukio , Koumura, Noboru , Narita, Izumi , Mashimo, Seiji
IPC分类号： H01L51/20 , H05B33/10 , B41J2/45
CPC分类号： H01L51/0031 , B41J2/45 , H01L27/3281 , H01L51/0015 , H01L51/0027 , H01L51/0081 , H01L2251/308 , Y10S257/918
摘要： An exposure device having an array of a plurality of light emitting elements composed of at least an anode layer (2), a cathode layer (6) and one or more organic compound layers (7) interposed between the anode layer and the cathode layer all of which are formed on a substrate (1). In the exposure device, the quantity of light emitted from each light emitting element is made uniform by controlling the light emitting area of each light emitting element. Therefore, the exposure device eliminates differences in the quantity of emitted light among the plurality of light emitting elements without using a special drive circuit.
摘要翻译：具有由至少阳极层（2），阴极层（6）和介于阳极层和阴极层之间的一个或多个有机化合物层（7）构成的多个发光元件的阵列的曝光装置全部其形成在基板（1）上。在曝光装置中，通过控制每个发光元件的发光面积，使从每个发光元件发射的光量均匀。因此，曝光装置消除了多个发光元件之间的发光量的差别，而不使用特殊的驱动电路。

2. 发明公开

EP2523250A1 METHOD FOR MANUFACTURING DYE-SENSITIZED SOLAR CELL 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG EINER FARBSTOFFSENSIBILISIERTEN SOLARZELLE
公开(公告)号：EP2523250A1
公开(公告)日：2012-11-14
申请号：EP10842201.5
申请日：2010-12-22
申请人： Hitachi Zosen Corporation
发明人： SUGIYO, Takeshi , INOUE, Tetsuya
IPC分类号： H01M14/00 , H01L31/04
CPC分类号： H01G9/2031 , H01G9/2059 , H01L51/0027 , Y02E10/542 , Y02P70/521
摘要： Disclosed is a method for manufacturing a dye-sensitized solar cell including a transparent electrode (1), a counter electrode (2), an electrolyte layer (3) disposed between the electrodes (1) and (2), and a photocatalyst film (4) disposed between the electrodes (1) and (2) and near the transparent electrode (1), the method including: forming the photocatalyst film (4) by applying a mixed solution to a surface of the transparent electrode (1) and sintering the mixed solution by laser beam irradiation, the mixed solution containing fine particles of titanium oxide serving as photocatalyst fine particles and a solution of titanium isopropoxide serving as a photocatalyst precursor.
摘要翻译：公开了一种染料敏化太阳能电池的制造方法，其包括透明电极（1），对电极（2），设置在电极（1）和（2）之间的电解质层（3）和光催化膜 4）设置在电极（1）和（2）之间并且在透明电极（1）附近，所述方法包括：通过将混合溶液施加到透明电极（1）的表面上并烧结来形成光催化膜（4）通过激光束照射的混合溶液，含有作为光催化剂微粒的氧化钛的微粒的混合溶液和作为光催化剂前体的异丙醇钛的溶液。

3. 发明公开

EP1993127A2 Manufacturing method of soi substrate and manufacturing method of semiconductor device 有权
标题翻译： soi衬底的制造方法和半导体器件的制造方法
公开(公告)号：EP1993127A2
公开(公告)日：2008-11-19
申请号：EP08005687.2
申请日：2008-03-26
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Miyairi, Hidakazu , Shimomura, Akihisa , Mizoi, Tatsuya , Higa, Eiji , Nagano, Yoji
IPC分类号： H01L21/762
CPC分类号： H01L27/1203 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/78654 , H01L51/0027 , H01L2224/03552
摘要： A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.
摘要翻译：对具有耐热性低的基底基板和平坦性高的非常薄的半导体层的SOI基板的制造方法进行说明。该方法包括：将氢离子注入到半导体衬底中以形成离子注入层; 将半导体衬底和诸如玻璃衬底的基础衬底键合，将键合层置于其间; 加热彼此粘合的基底以将半导体基底与基底基底分离，在基底基底上留下薄半导体层; 用激光照射薄半导体层的表面以改善平面性并恢复薄半导体层的结晶度; 并使薄半导体层变薄。该方法允许在基础衬底上形成具有厚度为100nm或更小的单晶半导体层的SOI衬底。

4. 发明公开

EP2754161A1 PROCESS OF MANUFACTURING OF THE CATALYTIC LAYER OF THE COUNTER-ELECTRODES OF DYE-SENSITIZED SOLAR CELLS 审中-公开
标题翻译：用于生产催化层电极防的染料敏化太阳能
公开(公告)号：EP2754161A1
公开(公告)日：2014-07-16
申请号：EP12773395.4
申请日：2012-08-28
申请人： Dyepower
发明人： BROWN, Thomas Meredith , MINCUZZI, Girolamo , GIORDANO, Fabrizio , REALE, Andrea , DI CARLO, Aldo
IPC分类号： H01G9/20
CPC分类号： H01G9/0029 , H01G9/2022 , H01G9/2031 , H01G9/2059 , H01L51/0027 , Y02E10/542 , Y02P70/521
摘要： The present invention concerns a process of manufacturing of the catalytic layer (102', 202') of the counter-electrodes of dye-sensitized solar cells, comprising the following steps; depositing a catalyst precursor paste or precursor solution layer (102, 202) over the counter-electrodes conductive and transparent substrates (101, 201), by screen printing, doctor blade, spin coating or brush; irradiating said catalyst precursor paste or precursor solution layer (102, 202) with a C.W. or pulsed laser beam (104, 204) having a wavelength in the range of infrared (CO
2 , Nd:YAG, Nd:YVO
4 , Yb doped fiber) visible (frequency doubled Nd:YAG, Nd:YVO4, Yb doped fiber) or ultraviolet (frequency tripled Nd:YAG, Nd:YVO
4 , Yb doped fiber), thus curing said precursor and forming a catalyst layer over the conductive and transparent counter-electrode substrates.

5. 发明公开

EP2691985A1 ELECTRONIC DEVICE AND ITS METHOD OF MANUFACTURE 有权转让
标题翻译： VERFAHREN ZU IHRER HERSTELLUNG的ELEKTRONISCHE VORRICHTUNG
公开(公告)号：EP2691985A1
公开(公告)日：2014-02-05
申请号：EP12719435.5
申请日：2012-03-30
申请人： Pragmatic Printing Ltd
发明人： PRICE, Richard , RAMSDALE, Catherine
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L21/268 , H01L21/428 , H01L29/6675 , H01L29/66757 , H01L29/66772 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696 , H01L51/0027 , H01L51/105
摘要： A method of manufacturing an electronic device comprises: providing a layer of semiconductor material comprising a first portion, a second portion, and a third portion, the third portion connecting the first portion to the second portion and providing a semiconductive channel for electrical current flow between the first and second portions; providing a gate terminal arranged with respect to said third portion such that a voltage may be applied to the gate terminal to control an electrical conductivity of said channel; and processing at least one of the first and second portions so as to have an electrical conductivity greater than an electrical conductivity of the channel when no voltage is applied to the gate terminal. In certain embodiments, the processing comprises exposing at least one of the first and second portions to electromagnetic radiation. The first and second portions may be laser annealed to increase their conductivities.
摘要翻译：一种制造电子器件的方法包括：提供包括第一部分，第二部分和第三部分的半导体材料层，第三部分将第一部分连接到第二部分，并提供半导体通道，用于在第一和第二部分; 提供相对于所述第三部分布置的栅极端子，使得可以向栅极端子施加电压以控制所述沟道的电导率; 以及当没有电压施加到所述栅极端子时，处理所述第一部分和所述第二部分中的至少一个，使得具有大于所述沟道的电导率的导电性。在某些实施例中，处理包括将第一和第二部分中的至少一个暴露于电磁辐射。第一和第二部分可以被激光退火以增加它们的电导率。

6. 发明授权

EP1009046B1 Light emitting element array, method of forming the array and image forming apparatus 有权
标题翻译：发光元件，使得所述阵列和图像形成装置的方法中的阵列
公开(公告)号：EP1009046B1
公开(公告)日：2006-05-24
申请号：EP99308289.0
申请日：1999-10-20
申请人： CANON KABUSHIKI KAISHA
发明人： Nagase, Yukio , Koumura, Noboru , Narita, Izumi , Mashimo, Seiji
IPC分类号： H01L51/50 , H05B33/10 , B41J2/45
CPC分类号： H01L51/0031 , B41J2/45 , H01L27/3281 , H01L51/0015 , H01L51/0027 , H01L51/0081 , H01L2251/308 , Y10S257/918

7. 发明公开

EP3144992A4 ORGANIC LIGHT-EMITTING DEVICE 有权
公开(公告)号：EP3144992A4
公开(公告)日：2018-01-17
申请号：EP15792124
申请日：2015-05-04
申请人： LG DISPLAY CO LTD
发明人： KANG MINSOO , JANG SEONGSU , MOON YOUNG KYUN , PARK SUNG SOO , KIM CHEOL HYEON
IPC分类号： H01L51/52
CPC分类号： H01L51/5228 , H01L27/3223 , H01L51/0027 , H01L51/5212 , H01L51/5253 , H01L51/56 , H01L2251/5338 , H01L2251/5392 , H01L2251/568
摘要： The present specification provides an organic light emitting device.

8. 发明公开

EP2740751A4 PRECIPITATION METHOD FOR CONDUCTIVE POLYMER-METAL COMPLEX, AND CONDUCTIVE POLYMER-METAL COMPLEX 审中-公开
标题翻译：沉淀法形成导电聚合物金属配合物和导电性高分子金属络合物
公开(公告)号：EP2740751A4
公开(公告)日：2015-01-21
申请号：EP12820585
申请日：2012-07-27
申请人： NAT INST FOR MATERIALS SCIENCE
发明人： KAWAKITA JIN , CHIKYO TOYOHIRO
IPC分类号： C08G61/12 , C08G73/00 , C08G73/02 , C08K3/00 , C08K3/08 , C08L65/00 , H01B1/02 , H01B1/12 , H01B13/00 , H01L51/00 , H01L51/30 , H05K1/09 , H05K3/10
CPC分类号： H01B1/124 , C08G61/124 , C08G61/126 , C08G73/0266 , C08G2261/3221 , C08G2261/3223 , C08K3/08 , C08K2003/0806 , C08K2201/011 , H01B1/127 , H01B1/128 , H01L51/0027 , H01L51/0036 , H01L51/0091 , H01L51/4213 , H05K1/092 , H05K3/106 , H05K2201/0329 , H05K2201/10143 , H05K2203/1157 , Y10T428/2927 , Y10T428/2958 , C08L65/00
摘要： The invention has for its object to provide a process of producing a conducting material suitable for being filled in TSVs for LSI chip 3D package, etc. A solution containing a monomer that provides a conducting polymer, anions, and metal ions such as Ag + or Cu 2+ is irradiated with ultraviolet radiation or light having the energy necessary for exciting electrons up to an energy level capable of reducing the metal ions to precipitate a conducting polymer/metal composite. This enables an electrical conductor of high electrical conductivity to be precipitated faster than could be achieved by conventional processes.

9. 发明授权

EP1993127B1 Manufacturing method of SOI substrate 有权
标题翻译：一种制造SOI基板的制造方法
公开(公告)号：EP1993127B1
公开(公告)日：2013-04-24
申请号：EP08005687.2
申请日：2008-03-26
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Miyairi, Hidakazu , Shimomura, Akihisa , Mizoi, Tatsuya , Higa, Eiji , Nagano, Yoji
IPC分类号： H01L21/762 , H01L27/12
CPC分类号： H01L27/1203 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/78654 , H01L51/0027 , H01L2224/03552
摘要： A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.

10. 发明公开

EP1993127A3 Manufacturing method of soi substrate and manufacturing method of semiconductor device 有权
标题翻译：一种用于生产制造半导体器件的SOI衬底和方法的工序
公开(公告)号：EP1993127A3
公开(公告)日：2010-06-23
申请号：EP08005687.2
申请日：2008-03-26
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Miyairi, Hidakazu , Shimomura, Akihisa , Mizoi, Tatsuya , Higa, Eiji , Nagano, Yoji
IPC分类号： H01L21/762
CPC分类号： H01L27/1203 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/78654 , H01L51/0027 , H01L2224/03552
摘要： A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.

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