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1. 发明公开

EP2453480A2 Amorphous oxide and field effect transistor 审中-公开
标题翻译： Amorphes Oxid und Feldeffekttstristor
公开(公告)号：EP2453480A2
公开(公告)日：2012-05-16
申请号：EP11009312.7
申请日：2005-11-09
申请人： CANON KABUSHIKI KAISHA , Tokyo Institute of Technology
发明人： Sano, Masafumi , Nakagawa, Katsumi , Hosono, Hideo , Kamiya, Toshio , Nomura, Kenji
IPC分类号： H01L29/786 , H01L21/428 , H01L21/363
CPC分类号： H01L29/78693 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L21/428 , H01L27/1225 , H01L27/124 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A novel amorphous oxide film applicable, for example, to an active layer of a TFT is provided. The amorphous oxide film has an electron carrier concentration of less than 10 18 /cm 3 at a temperature of 25° C, wherein the amorphous oxide is an oxide comprising In, Ga, and Zn. The amorphous oxide film comprises a microcrystal that is surrounded by said amorphous oxide; or
the oxide chemical composition changes in the layer thickness direction in the film interior such that there is a region with a first chemical composition and a region with a second chemical composition other than said first composition; or
the oxide comprises one type of element or a plurality of elements selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, and P; or
the oxide comprises at least one element selected from the group consisting of Ti, Ru, and F.
摘要翻译：提供了可应用于例如TFT的有源层的新颖的无定形氧化物膜。无定形氧化物膜在25℃的温度下具有小于10 18 / cm 3的电子载流子浓度，其中无定形氧化物是包含In，Ga和Zn的氧化物。无定形氧化物膜包括由所述无定形氧化物包围的微晶体; 或所述膜内部的层厚度方向的氧化物化学成分变化，使得存在具有第一化学组成的区域和除了所述第一组合物之外的具有第二化学组成的区域; 或所述氧化物包括选自Li，Na，Mn，Ni，Pd，Cu，Cd，C，N和P中的一种元素或多种元素; 或氧化物包含选自Ti，Ru和F中的至少一种元素。

2. 发明公开

EP2455975A3 Amorphous oxide and field effect transistor 有权
标题翻译：非晶氧化物场效应晶体管
公开(公告)号：EP2455975A3
公开(公告)日：2014-06-25
申请号：EP11009311.9
申请日：2005-11-09
申请人： CANON KABUSHIKI KAISHA , Tokyo Institute of Technology
发明人： Sano, Masafumi , Nakagawa, Katsumi , Hosono, Hideo , Kamiya, Toshio , Nomura, Kenji
IPC分类号： H01L29/786 , H01L21/428 , H01L21/363 , H01L21/02
CPC分类号： H01L29/78693 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L21/428 , H01L27/1225 , H01L27/124 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A novel amorphous oxide film applicable, for example, to an active layer of a TFT is provided. The amorphous oxide film has an electron carrier concentration of less than 10 18 /cm 3 at a temperature of 25° C, wherein the amorphous oxide is any one selected from the group consisting of an oxide containing In, Zn, and Sn; an oxide containing In and Zn; an oxide containing In and Sn; and an oxide containing In, Zn, and Ga. The oxide comprises one type of element or a plurality of elements selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, and P; or at least one element selected from the group consisting of Ti, Ru, and F.

3. 发明公开

EP2453481A2 Amorphous oxide and field effect transistor 有权
标题翻译： Feldeffekttransistor mit amorphem氧化物
公开(公告)号：EP2453481A2
公开(公告)日：2012-05-16
申请号：EP11009313.5
申请日：2005-11-09
申请人： CANON KABUSHIKI KAISHA , Tokyo Institute of Technology
发明人： Sano, Masafumi , Nakagawa, Katsumi , Hosono, Hideo , Kamiya, Toshio , Nomura, Kenji
IPC分类号： H01L29/786 , H01L21/428 , H01L21/363
CPC分类号： H01L29/78693 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L21/428 , H01L27/1225 , H01L27/124 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A novel amorphous oxide film applicable, for example, to an active layer of a TFT is provided. The amorphous oxide in the film has an electron carrier concentration of less than 10 18 /cm 3 at a temperature of 25° C, wherein the amorphous oxide is any one selected from the group consisting of an oxide containing In, Zn, and Sn; an oxide containing In and Zn; an oxide containing In and Sn; and an oxide containing In, Ga, and Zn. The oxide chemical composition changes in the layer thickness direction in the film interior such that there is a region with a first chemical composition and a region with a second chemical composition other than said first composition.
摘要翻译：提供了可应用于例如TFT的有源层的新颖的无定形氧化物膜。膜中的无定形氧化物在25℃的温度下的电子载流子浓度小于10 18 / cm 3，其中非晶氧化物是选自含有In，Zn和Sn的氧化物中的任一种; 含有In和Zn的氧化物; 含有In和Sn的氧化物; 和含有In，Ga和Zn的氧化物。氧化物化学成分在膜内部的层厚度方向上发生变化，使得存在具有第一化学组成的区域和除了所述第一组合物之外的具有第二化学组成的区域。

4. 发明授权

EP2453481B1 Field effect transistor with amorphous oxide 有权
标题翻译：具有非晶氧化物场效应晶体管
公开(公告)号：EP2453481B1
公开(公告)日：2017-01-11
申请号：EP11009313.5
申请日：2005-11-09
申请人： CANON KABUSHIKI KAISHA , Tokyo Institute of Technology
发明人： Sano, Masafumi , Nakagawa, Katsumi , Hosono, Hideo , Kamiya, Toshio , Nomura, Kenji
IPC分类号： H01L29/786 , H01L29/66 , H01L21/428 , H01L21/363 , H01L21/02
CPC分类号： H01L29/78693 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L21/428 , H01L27/1225 , H01L27/124 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A novel amorphous oxide film applicable, for example, to an active layer of a TFT is provided. The amorphous oxide film has an electron carrier concentration of less than 10 18 /cm 3 at a temperature of 25° C, wherein the amorphous oxide is any one selected from the group consisting of an oxide containing In, Zn, and Sn; an oxide containing In and Zn; an oxide containing In and Sn; and an oxide containing In, Zn, and Ga. The oxide comprises one type of element or a plurality of elements selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, and P; or at least one element selected from the group consisting of Ti, Ru, and F.

5. 发明公开

EP2453481A3 Amorphous oxide and field effect transistor 有权
标题翻译：非晶氧化物和场效应晶体管
公开(公告)号：EP2453481A3
公开(公告)日：2014-11-19
申请号：EP11009313.5
申请日：2005-11-09
申请人： CANON KABUSHIKI KAISHA , Tokyo Institute of Technology
发明人： Sano, Masafumi , Nakagawa, Katsumi , Hosono, Hideo , Kamiya, Toshio , Nomura, Kenji
IPC分类号： H01L29/786 , H01L21/428 , H01L21/363 , H01L21/02
CPC分类号： H01L29/78693 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L21/428 , H01L27/1225 , H01L27/124 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A novel amorphous oxide film applicable, for example, to an active layer of a TFT is provided. The amorphous oxide in the film has an electron carrier concentration of less than 10 18 /cm 3 at a temperature of 25° C, wherein the amorphous oxide is any one selected from the group consisting of an oxide containing In, Zn, and Sn; an oxide containing In and Zn; an oxide containing In and Sn; and an oxide containing In, Ga, and Zn. The oxide chemical composition changes in the layer thickness direction in the film interior such that there is a region with a first chemical composition and a region with a second chemical composition other than said first composition.
摘要翻译：提供了一种例如可应用于TFT的有源层的新型无定形氧化物膜。膜中的无定形氧化物在25℃的温度下具有小于10 18 / cm 3的电子载流子浓度，其中无定形氧化物是选自包含In，Zn和Sn的氧化物中的任何一种; 含有In和Zn的氧化物; 含有In和Sn的氧化物; 以及含有In，Ga和Zn的氧化物。氧化物化学组成在膜内部的层厚度方向上变化，使得存在具有第一化学组成的区域和具有除所述第一组成以外的第二化学组成的区域。

6. 发明公开

EP2455975A2 Amorphous oxide and field effect transistor 有权
标题翻译：非晶氧化物和场效应晶体管
公开(公告)号：EP2455975A2
公开(公告)日：2012-05-23
申请号：EP11009311.9
申请日：2005-11-09
申请人： CANON KABUSHIKI KAISHA , Tokyo Institute of Technology
发明人： Sano, Masafumi , Nakagawa, Katsumi , Hosono, Hideo , Kamiya, Toshio , Nomura, Kenji
IPC分类号： H01L29/786 , H01L21/428 , H01L21/363
CPC分类号： H01L29/78693 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L21/428 , H01L27/1225 , H01L27/124 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A novel amorphous oxide film applicable, for example, to an active layer of a TFT is provided. The amorphous oxide film has an electron carrier concentration of less than 10 18 /cm 3 at a temperature of 25° C, wherein the amorphous oxide is any one selected from the group consisting of an oxide containing In, Zn, and Sn; an oxide containing In and Zn; an oxide containing In and Sn; and an oxide containing In, Zn, and Ga. The oxide comprises one type of element or a plurality of elements selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, and P; or at least one element selected from the group consisting of Ti, Ru, and F.
摘要翻译：提供了一种例如可应用于TFT的有源层的新型无定形氧化物膜。非晶氧化物膜在25℃的温度下具有小于1018 / cm3的电子载流子浓度，其中非晶氧化物是选自包含In，Zn和Sn的氧化物中的任何一种; 含有In和Zn的氧化物; 含有In和Sn的氧化物; 以及包含In，Zn和Ga的氧化物，所述氧化物包含选自由Li，Na，Mn，Ni，Pd，Cu，Cd，C，N和P组成的组中的一种元素或多种元素; 或选自由Ti，Ru和F组成的组中的至少一种元素。

7. 发明授权

EP2455975B1 Field effect transistor with amorphous oxide 有权
标题翻译： Feldeffekttransistor mit amorphem氧化物
公开(公告)号：EP2455975B1
公开(公告)日：2015-10-28
申请号：EP11009311.9
申请日：2005-11-09
申请人： CANON KABUSHIKI KAISHA , Tokyo Institute of Technology
发明人： Sano, Masafumi , Nakagawa, Katsumi , Hosono, Hideo , Kamiya, Toshio , Nomura, Kenji
IPC分类号： H01L29/66 , H01L21/02 , H01L21/428 , H01L29/786
CPC分类号： H01L29/78693 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L21/428 , H01L27/1225 , H01L27/124 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A novel amorphous oxide film applicable, for example, to an active layer of a TFT is provided. The amorphous oxide film has an electron carrier concentration of less than 10 18 /cm 3 at a temperature of 25° C, wherein the amorphous oxide is any one selected from the group consisting of an oxide containing In, Zn, and Sn; an oxide containing In and Zn; an oxide containing In and Sn; and an oxide containing In, Zn, and Ga. The oxide comprises one type of element or a plurality of elements selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, and P; or at least one element selected from the group consisting of Ti, Ru, and F.
摘要翻译：提供了可应用于例如TFT的有源层的新颖的无定形氧化物膜。无定形氧化物膜在25℃的温度下的电子载流子浓度小于10 18 / cm 3，其中非晶氧化物是选自含有In，Zn和Sn的氧化物中的任何一种; 含有In和Zn的氧化物; 含有In和Sn的氧化物; 氧化物含有选自Li，Na，Mn，Ni，Pd，Cu，Cd，C，N和P中的一种元素或多种元素; 或选自Ti，Ru和F中的至少一种元素。

8. 发明授权

EP0566972B1 Pin junction photovoltaic device having an i-TYPE a-SiGe semiconductor layer with a maximal point for the Ge content 失效
标题翻译：具有pin结，其包括的i的光伏器件（ASI-Ge）的层，具有用于Ge含量的最大点
公开(公告)号：EP0566972B1
公开(公告)日：1999-03-31
申请号：EP93106028.9
申请日：1993-04-14
申请人： CANON KABUSHIKI KAISHA
发明人： Matsuda, Koichi , Sano, Masafumi , Murakami, Tsutomu
IPC分类号： H01L31/075
CPC分类号： H01L31/076 , H01L31/03765 , H01L31/065 , H01L31/075 , Y02E10/548

9. 发明公开

EP0661761A2 Method of manufacturing photoelectric transducer 失效
标题翻译：光电转换器的制造方法。
公开(公告)号：EP0661761A2
公开(公告)日：1995-07-05
申请号：EP94309905.1
申请日：1994-12-29
申请人： CANON KABUSHIKI KAISHA
发明人： Tokutake, Nobuo , Sano, Masafumi , Hayashi, Ryo , Higashikawa, Makoto
IPC分类号： H01L31/20 , H01L31/0392 , H01L31/052 , H01L31/075
CPC分类号： H01L31/076 , H01L31/03921 , H01L31/056 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： The present invention is intended to provide a method of manufacturing a photoelectric transducer stably, constantly and in a high yield that has a high conversion efficiency and high reliability durable for a long period use and is characterized in that the method of manufacturing a photoelectric transducer having a functional film formed on a conductive substrate comprises applying ultrasonic cleaning with a cleaning liquid containing water to the conductive substrate, allowing the surface of the conductive substrate to contact with purified water, and forming the functional film. The functional film is characterized in being formed with a metal layer as light-reflecting layer, a reflection enhancing layer, and a semiconductor photovoltaic device layer, prepared by a plasma CVD method, comprising a non-monocrystalline material containing silicon atom as the matrix.

10. 发明公开

EP0566972A1 Pin junction photovoltaic device having an i-TYPE a-SiGe semiconductor layer with a maximal point for the Ge content 失效
标题翻译：具有pin结，其包括的i的光伏器件（ASI-Ge）的层，具有用于Ge含量最大点。
公开(公告)号：EP0566972A1
公开(公告)日：1993-10-27
申请号：EP93106028.9
申请日：1993-04-14
申请人： CANON KABUSHIKI KAISHA
发明人： Matsuda, Koichi , Sano, Masafumi , Murakami, Tsutomu
IPC分类号： H01L31/075
CPC分类号： H01L31/076 , H01L31/03765 , H01L31/065 , H01L31/075 , Y02E10/548
摘要： A pin junction photovoltaic device comprising a substrate and a pin junction semiconductor active layer region disposed on said substrate, said pin junction semiconductor active layer region comprising a p-type semiconductor layer (105) composed of a p-type non-single crystalline semiconductor material, an i-type semiconductor layer composed of an i-type non-single crystalline semiconductor material, and an n-type semiconductor layer (103) composed of an n-type non-single crystalline semiconductor material, characterized in that (a) a buffer layer (118) comprising a non-single crystalline silicon semiconductor material substantially not containing germanium atoms is interposed between said p-type semiconductor layer and said i-type semiconductor layer, (b) a buffer layer (117) comprising a non-single crystalline silicon semiconductor material substantially not containing germanium atoms is interposed between said i-type semiconductor layer and said n-type semiconductor layer, and said i-type semiconductor layer is formed of an amorphous silicon germanium semiconductor material containing the germanium atoms in an amount of 20 to 70 atomic % in the entire region in which the concentration distribution of the germanium atoms in the thickness direction is varied while providing a maximum concentration point.
摘要翻译： pin结光生伏打器件，包括基片和设置在所述基板的pin结的半导体有源层区，所述pin结的半导体有源层区域包括p型非单晶半导体材料组成的p型半导体层（105）在n型的非单晶半导体材料构成的i型非单晶半导体材料和n型半导体层（103）组成的i型半导体层，其特征在于DASS（a）一种包括非单晶硅半导体材料实质上不含有锗原子的缓冲层（118）被插在所述p型半导体层之间和所述I型半导体层，（b）包含非单晶的缓冲层（117）实质上不含有锗原子的结晶硅半导体材料介于所述i型半导体层和n型半导体层。所述，并且所述 i型半导体层形成包含在整个区域的20〜70原子％的量的锗原子在哪，同时提供最大的厚度方向锗原子的浓度分布是变化的无定形硅锗半导体材料的集中点。

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