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1. 发明申请

WO2006135369A1 ULTRAVIOLET ASSISTED PROPGEN REMOVAL AND/OR CURING PROCESSES FOR FORMING POROUS LOW K DIELECTRICS 审中-公开
标题翻译：用于形成多孔低K电介质的ULTRAVIOLET辅助的去除和/或固化方法
公开(公告)号：WO2006135369A1
公开(公告)日：2006-12-21
申请号：PCT/US2005/020862
申请日：2005-06-10
申请人： AXCELIS TECHNOLOGIES, INC. , WALDFRIED, Carlo , HAN, Qingyuan , ESCORCIA, Orlando , BERRY, Ivan
发明人： WALDFRIED, Carlo , HAN, Qingyuan , ESCORCIA, Orlando , BERRY, Ivan
IPC分类号： H01L21/316
CPC分类号： H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02271 , H01L21/02348 , H01L21/7682 , H01L21/76825 , H01L2221/1047
摘要： Processes for forming porous low k dielectric materials from low k dielectric films containing a porogen material include exposing the low k dielectric film to ultraviolet radiation. In one embodiment, the film is exposed to broadband ultraviolet radiation of less than 240 nm for a period of time and intensity effective to remove the porogen material. In other embodiments, the low k dielectric film is exposed to a first ultraviolet radiation pattern effective to increase a crosslinking density of the film matrix while maintaining a concentration of the porogen material substantially the same before and after exposure to the first ultraviolet radiation pattern. The low k dielectric film can be then be processed to form a metal interconnect structure therein and subsequently exposed to a second ultraviolet radiation pattern effective to remove the porogen material from the low k dielectrics film and form a porous low k dielectric film.
摘要翻译：从含有致孔剂材料的低k电介质膜形成多孔低k电介质材料的方法包括将低k电介质膜暴露于紫外线辐射。在一个实施方案中，将薄膜暴露于小于240nm的宽带紫外线辐射一段时间和强度以有效去除致孔剂材料。在其他实施例中，低k电介质膜暴露于有效地增加膜基质的交联密度的第一紫外线辐射图，同时在暴露于第一紫外线辐射图之前和之后保持致孔剂材料的浓度基本相同。然后可以处理低k电介质膜以在其中形成金属互连结构，随后暴露于有效从低k电介质膜去除致孔剂材料并形成多孔低k电介质膜的第二紫外线图案。

2. 发明申请

WO2006088881A2 ADVANCED LOW DIELECTRIC CONSTANT ORGANOSILICON PLASMA CHEMICAL VAPOR DEPOSITION FILMS 审中-公开
标题翻译：高级低介电常数有机硅等离子体化学气相沉积膜
公开(公告)号：WO2006088881A2
公开(公告)日：2006-08-24
申请号：PCT/US2006/005204
申请日：2006-02-14
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , SONY CORPORATION , NGUYEN, Son, V. , LANE, Sarah, L. , LEE, Jia , IDA, Kensaku , RESTAINO, Darryl, D. , NOGAMI, Takeshi
发明人： NGUYEN, Son, V. , LANE, Sarah, L. , LEE, Jia , IDA, Kensaku , RESTAINO, Darryl, D. , NOGAMI, Takeshi
IPC分类号： H01L21/31
CPC分类号： H01L21/7682 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/02348 , H01L21/02351 , H01L21/02354 , H01L21/3122 , H01L21/31633 , H01L2221/1047
摘要： A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter "SiCOH") in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3.0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, -CH 2 - crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH 3 +CH 2 stretching of less than about 1.40, a peak area for SiH stretching of less than about 0.20, a peak area for SiCH 3 bonding of greater than about 2.0, and a peak area for Si-O-Si bonding of greater than about 60%, and a porosity of greater than about 20%.
摘要翻译：在介电常数小于约3.0的共价键合的三维网络结构中，包含Si，C，O和H原子（以下称为“SiCOH”）的多孔低k或超低k电介质膜，结晶度更高键合相互作用，提供比现有技术的SiCOH电介质更多的碳作为甲基端基和较少的亚甲基-CH 2 - 2交联基团。 SiCOH电介质的特征在于具有包含小于约1.40的CH 3 N 2 CH 2拉伸的峰面积的FTIR光谱，SiH拉伸的峰面积小于约0.20，SiCH 3键的峰面积大于约2.0，Si-O-Si键合的峰面积大于约60％，孔隙率大于约20％。

3. 发明申请

WO2006044690A3 LOW-K DIELECTRIC FUNCTIONAL IMPRINTING MATERIALS 审中-公开
标题翻译：低K电介质功能性印刷材料
公开(公告)号：WO2006044690A3
公开(公告)日：2006-08-10
申请号：PCT/US2005037063
申请日：2005-10-14
申请人： MOLECULAR IMPRINTS INC
发明人： XU FRANK Y , CHUN JUN SUNG , WATTS MICHAEL P C
IPC分类号： G03C1/76 , C08F2/46 , C08J7/18
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L21/76817 , H01L21/7682 , H01L2221/1047 , Y10T428/24545 , Y10T428/24612
摘要： In a substantially planar circuit, the conductors are separated by an inorganic material with a dielectric constant of less than about 3.0. The dielectric layers are formed in a process that includes defining trenches and/or vias for the conductors by imprinting an initially planar layer of a radiation curable composition. The imprinting die is preferably UV transparent such that the composition is UV cured while the imprint die is in place. The curable composition includes an organic modified silicate compound and a second decomposable organic component, the latter forming nanometer scale pores as the organic compounds are subsequently decomposed to provide a polysilicate matrix. The pores reduce the effective dielectric constant from that of otherwise dense silicon dioxide.
摘要翻译：在基本上平面的电路中，导体被介电常数小于约3.0的无机材料隔开。介电层在包括通过压印可辐射固化组合物的最初平面层而限定导体的沟槽和/或通孔的工艺中形成。压印模具优选是UV透明的，使得当压印模具就位时组合物被UV固化。可固化组合物包含有机改性硅酸盐化合物和第二可分解有机组分，后者形成纳米级孔隙，随着有机化合物随后分解以提供聚硅酸盐基质。孔隙使有效介电常数与其他致密二氧化硅的有效介电常数减小。

4. 发明申请

WO2006025500A1 半導体装置の製造方法およびこれを用いて形成された半導体装置审中-公开
标题翻译：用于制造半导体器件的方法和通过这种方法制造的半导体器件
公开(公告)号：WO2006025500A1
公开(公告)日：2006-03-09
申请号：PCT/JP2005/016030
申请日：2005-09-01
申请人：ローム株式会社 , 株式会社アルバック , 三井化学株式会社 , 奥良彰 , 藤井宜年 , 高村一夫
发明人：奥良彰 , 藤井宜年 , 高村一夫
IPC分类号： H01L21/768 , H01L23/522
CPC分类号： H01L21/76826 , H01L21/2855 , H01L21/32051 , H01L21/76802 , H01L21/7682 , H01L21/76832 , H01L21/76834 , H01L21/76843 , H01L2221/1047
摘要：　誘電体薄膜と導体層との密着性を高め信頼性の高い配線構造をもつ半導体装置を提供する。本発明の方法は、Ｓｉ－Ｏ結合を主成分とする骨格の周りに多数の空孔が配置された誘電体薄膜表面に、反応性プラズマを供給し、前処理を行なう工程と、前記前処理のなされた前記誘電体薄膜表面にスパッタリング法により導電性膜を形成する工程とを含む半導体装置の製造方法であって、前記前処理工程に先立ち、前記誘電体薄膜表面に、テトラメチルシクロテトラシロキサン（ＴＭＣＴＳ）、ヘキサメチルシラザン（ＨＭＤＳ）、トリメチルクロロシラン（ＴＭＣＳ）分子のうちの少なくとも１種を含むガスを接触させる工程とを含むことを特徴とする。
摘要翻译：公开了具有高可靠性布线结构的半导体器件，其中电介质薄膜和导体层之间的粘附性得到改善。具体公开了一种制造半导体器件的方法，其包括以下步骤：向电介质薄膜的表面供应反应性等离子体，其中许多孔布置在主要包含Si-O键的骨架周围，用于预处理表面，以及步骤通过溅射在这样预处理的电介质薄膜表面上形成导电膜。该方法的特征在于在预处理步骤之前，使包含四甲基环四硅氧烷（TMCTS），六甲基硅氮烷（HMDS）和三甲基氯硅烷（TMCS））分子中的至少一种的气体与电介质薄膜表面接触的步骤。

5. 发明申请

WO2005098085A3 MULTI-STAGE CURING OF LOW K NANO-POROUS FILMS 审中-公开
标题翻译：低K纳米多孔膜的多段固化
公开(公告)号：WO2005098085A3
公开(公告)日：2006-02-16
申请号：PCT/US2005010238
申请日：2005-03-24
申请人： APPLIED MATERIALS INC , SCHMITT FRANCIMAR , ZHENG YI , YIM KANG SUB , AHN SANG H , D CRUZ LESTER A , HO DUSTIN W , DEMOS ALEXANDROS T , XIA LI-QUN , WITTY DEREK R , M SAAD HICHEM
发明人： SCHMITT FRANCIMAR , ZHENG YI , YIM KANG SUB , AHN SANG H , D CRUZ LESTER A , HO DUSTIN W , DEMOS ALEXANDROS T , XIA LI-QUN , WITTY DEREK R , M SAAD HICHEM
IPC分类号： C23C16/40 , C23C16/50 , C23C16/56 , H01L21/3105 , H01L21/312 , H01L21/316 , H01L21/469 , H01L21/768 , H01L23/52
CPC分类号： H01L21/76825 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/3105 , H01L21/3121 , H01L21/31695 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L2221/1047 , Y10T428/249978
摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.
摘要翻译：根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。在某些实施方案中，可以使用电子束照射和热暴露步骤的组合来控制掺入到膜中的孔原子的选择性除气，导致纳米孔的形成。根据一个具体实施方案，可以通过初始施加热能来固化由含硅组分和具有不稳定基团的不含硅组分之间的反应产生的低K层，然后在形式的电子束。

6. 发明申请

WO2005098925A1 TECHNIQUES PROMOTING ADHESION OF POROUS LOW K FILM TO UNDERLYING BARRIER LAYER 审中-公开
标题翻译：技术促进多孔低K膜粘合到相对较低的障碍层
公开(公告)号：WO2005098925A1
公开(公告)日：2005-10-20
申请号：PCT/US2005/009969
申请日：2005-03-24
申请人： APPLIED MATERIALS, INC. , SCHMITT, Francimar , DEMOS, Alexandros, T. , WITTY, Derek, R. , M'SAAD, Hichem , AHN, Sang, H. , D'CRUZ, Lester, A. , ELSHEREF, Khaled, A. , CUI, Zhenjiang
发明人： SCHMITT, Francimar , DEMOS, Alexandros, T. , WITTY, Derek, R. , M'SAAD, Hichem , AHN, Sang, H. , D'CRUZ, Lester, A. , ELSHEREF, Khaled, A. , CUI, Zhenjiang
IPC分类号： H01L21/316
CPC分类号： H01L21/31633 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/31058 , H01L21/31695 , H01L21/76801 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L21/76825 , H01L21/76828 , H01L21/76832 , H01L2221/1047
摘要： Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition. In still another approach, parameters of ebeam treatment such as dosage, energy, or the use of thermal annealing, may be controlled to remove carbon species at the interface between the barrier and the low K film. In a further approach, a pre-treatment plasma may be introduced prior to low k deposition to enhance heating of the barrier interface, such that a thin oxide interface is formed when low K deposition gases are introduced and the low K film is deposited.
摘要翻译：通过与上覆的多孔低K膜形成碳含量较低的中间层和富含氧化硅的多孔低K膜与下面的阻挡层的粘附性得到改善。可以利用单独或组合的多种技术之一形成该粘附层。在一种方法中，粘合层可以通过引入富氧化气体如O 2 / CO 2等形成。以在沉积低K材料之前立即氧化Si前体。在另一种方法中，在低K膜沉积之前，除去热不稳定化学品如α-萜品烯，伞花烃和任何其它不含氧的有机物。在另一种方法中，可以修改硬件或处理参数，例如引入非硅含量组分的方式，以使得能够在低K膜沉积之前形成氧化物界面。在另一种方法中，可以控制ebeam处理的参数，例如剂量，能量或使用热退火，以去除阻挡层和低K膜之间的界面处的碳物质。在另一种方法中，可以在低k沉积之前引入预处理等离子体以增强阻挡界面的加热，使得当引入低K沉积气体并沉积低K膜时，形成薄氧化物界面。

7. 发明申请

WO2004049432A3 SEALING POROUS STRUCTURES 审中-公开
标题翻译：密封多孔结构
公开(公告)号：WO2004049432A3
公开(公告)日：2004-12-02
申请号：PCT/US0340061
申请日：2003-11-21
申请人： ASM INC , ASM INT
发明人： RAAIJMAKERS IVO , SOININEN PEKKA J , GRANNEMAN ERNST , HAUKKA SUVI , ELERS KAI-ERIK , TUOMINEN MARCO , SPREY HESSEL , TERHORST HERBERT , HENDRIKS MENSO
IPC分类号： H01L21/285 , H01L21/768 , H01L23/00 , H01L23/522 , H01L23/532
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/28562 , H01L21/7681 , H01L21/76814 , H01L21/7682 , H01L21/76825 , H01L21/76828 , H01L21/76831 , H01L21/76844 , H01L21/76864 , H01L21/76873 , H01L23/5226 , H01L23/53238 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： Method and structures are provided for conformal lining of dual damascene structures in integrated circuits, and particularly of openings formed in porous materials. Trenches and contact vias are formed in insulating layers. The pores on the sidewalls of the trenches and vias are blocked, and then the structure is exposed to alternating chemistries to form monolayers of a desired lining material. In exemplary process flows chemical or physical vapor deposition (CVD or PVD) of a sealing layer blocks the pores due to imperfect conformality. An alternating process can also be arranged by selection of pulse separation and/or pulse duration to achieve reduced conformality relative to a self-saturating, self-limiting atomic layer deposition (ALD) process. In still another arrangement, layers with anisotropic pore structures can be sealed by selectively melting upper surfaces. Blocking is followed by a self-limiting, self-saturating atomic layer deposition (ALD) reactions without significantly filling the pores.
摘要翻译：提供了用于集成电路中的双镶嵌结构的保形衬里的方法和结构，特别是在多孔材料中形成的开口。沟槽和接触通孔形成在绝缘层中。沟槽和通孔的侧壁上的孔堵塞，然后将结构暴露于交替的化学物质以形成所需衬里材料的单层。在示例性工艺流程中，密封层的化学或物理气相沉积（CVD或PVD）由于不完美的共形性而堵塞孔。也可以通过选择脉冲分离和/或脉冲持续时间来布置交替过程，以相对于自饱和的自限制性原子层沉积（ALD）工艺实现降低的共形。在另一种布置中，可以通过选择性地熔化上表面来密封具有各向异性孔结构的层。之后是自限制的，自饱和的原子层沉积（ALD）反应而没有显着填充孔隙。

8. 发明申请

WO03050868A3 METHOD FOR PRODUCING A LAYERED ASSEMBLY AND A LAYERED ASSEMBLY 审中-公开
标题翻译：一种用于生产层排列和层排列
公开(公告)号：WO03050868A3
公开(公告)日：2003-09-04
申请号：PCT/DE0203998
申请日：2002-10-23
申请人： INFINEON TECHNOLOGIES AG , KREUPL FRANZ , HOENLEIN WOLFGANG , STEINHOEGL WERNER
发明人： KREUPL FRANZ , HOENLEIN WOLFGANG , STEINHOEGL WERNER
IPC分类号： H01L21/768 , H01L51/30 , C01B31/02 , H01L23/522
CPC分类号： H01L21/7682 , B82Y10/00 , H01L51/0048 , H01L2221/1047 , Y10S977/742
摘要： The invention relates to a method for producing a layered assembly and to a layered assembly (200). According to said method, two substantially parallel electrically conductive strip conductors (202, 203) are configured on a substrate and at least one auxiliary structure (205a, 205b, 205c) is configured on said substrate (201) between the two strip conductors (202, 203), running in a first direction (206), said first direction (206) forming an acute angle of at least 45 DEG or a right angle with a connecting axis of the strip conductors that runs at right angles to both strip conductors (202, 203). The invention is characterised in that the auxiliary structure or structures (205a, 205b, 205c) is or are produced from one material and said structure or structures can be selectively removed from the dielectric layer (204). In addition, a dielectric layer (204) is configured between the two strip conductors in such a way that the auxiliary structure or structures (205a, 205b, 205c) is or are at least partially covered by the dielectric layer (204).
摘要翻译：本发明涉及一种用于制造层结构的方法，和层布置。在用于制造层结构（200），两个基本上相互平行的导电迹线（202,203）的方法形成在衬底上的衬底，至少一个辅助结构（205A，205B，205C）上（201）且沿第一方向延伸的两个导体（202，203）之间（206）形成，该第一方向（206）与垂直于延伸的互连的连接轴线的锐角或直角两个互连（202，203）至少包括45°的角度，其中，所述至少一个辅助结构（205A，205B，205C）由介电层（204）的至少一个辅助结构是可选择性去除的材料制成。此外，在两个导体轨道之间形成的介电层（204），使得从电介质层（204）的所述至少一个辅助结构（205A，205B，205C）至少部分地被覆盖。

9. 发明申请

WO03063225A2 DIELECTRIC FILMS FOR NARROW GAP-FILL APPLICATIONS 审中-公开
标题翻译：用于NARROW GAP-FILL应用的电介质膜
公开(公告)号：WO03063225A2
公开(公告)日：2003-07-31
申请号：PCT/US0201628
申请日：2002-01-18
申请人： HONEYWELL INT INC
发明人： LEUNG ROGER , HACKER NIGEL , XIE SONGYUAN , DENG YANPEI , ENDISCH DENIS
IPC分类号： H01L21/76 , H01L21/314 , H01L21/316 , H01L21/762 , H01L21/768 , H01L23/532
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02129 , H01L21/022 , H01L21/02203 , H01L21/02282 , H01L21/02337 , H01L21/316 , H01L21/31695 , H01L21/76224 , H01L21/76837 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A colloidal suspension of nanoparticles composed of a dense material dispersed in a solent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolaiton applications. According to the mehtods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified bz infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followd by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.
摘要翻译：使用由分散在溶剂中的致密材料构成的纳米颗粒的胶体悬浮液来形成具有低热收缩率的间隙填充介电材料。介电材料特别适用于预金属电介质和浅沟槽隔离应用。根据形成介电材料的方法，将胶体悬浮液沉积在基底上并干燥以形成多孔中间层。中间层用诸如旋涂聚合物的液相基质材料进行改性，然后通过用气相基质材料渗透固化，或通过固化或单独固化来提供间隙填充，耐热稳定的，耐蚀刻的介电材料。

10. 发明申请

WO98047177A1 NANOPOROUS DIELECTRIC FILMS WITH GRADED DENSITY AND PROCESS FOR MAKING SUCH FILMS 审中-公开
标题翻译：具有分级密度的纳米电介质薄膜和制作这种薄膜的方法
公开(公告)号：WO98047177A1
公开(公告)日：1998-10-22
申请号：PCT/US1998/006492
申请日：1998-04-02
IPC分类号： H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532
CPC分类号： H01L23/5329 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/31695 , H01L21/7682 , H01L23/5222 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to nanoporous dielectric films (10) and to a process for their manufacture. A substrate having a plurality of raised lines (4) on its surface is provided with a relatively high porosity, low dielectric constant, silicon containing polymer composition (10) positioned between the raise lines (4) and a relatively low porosity, high dielectric constant, silicon containing composition (8) positioned on the lines (4).
摘要翻译：本发明涉及纳米多孔介电膜（10）及其制造方法。在其表面上具有多个凸起线（4）的基底设置有相对高孔隙率的低介电常数，位于升高线（4）之间的含硅聚合物组合物（10）和相对较低的孔隙率，高介电常数，位于管线（4）上的含硅组合物（8）。

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