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1. 发明申请

WO2016053619A1 FLOWABLE LOW-K DIELECTRIC GAPFILL TREATMENT 审中-公开
标题翻译：可流动的低K电介质GAPFILL治疗
公开(公告)号：WO2016053619A1
公开(公告)日：2016-04-07
申请号：PCT/US2015/050242
申请日：2015-09-15
申请人： APPLIED MATERIALS, INC
发明人： THADANI, Kiran V. , MALLICK, Adhijit Basu , KAMATH, Sanjay
IPC分类号： H01L21/205 , H01L21/31
CPC分类号： H01L21/02126 , C23C16/30 , C23C16/56 , H01L21/02274 , H01L21/02337 , H01L21/02348 , H01L21/02351 , H01L21/76224 , H01L21/76837
摘要： Methods are described for forming a flowable low-k dielectric film on a patterned substrate. The film may be a silicon-carbon-oxygen (Si-C-O) layer in which the silicon and carbon constituents come from a silicon and carbon containing precursor while the oxygen may come from an oxygen-containing precursor activated in a remote plasma region. Shortly after deposition, the silicon-carbon-oxygen layer is treated by exposure to a hydrogen-and-nitrogen-containing precursor such as ammonia prior to curing. The treatment may remove residual moisture from the silicon-carbon-oxygen layer and may make the lattice more resilient during curing and subsequent processing. The treatment may reduce shrinkage of the silicon-carbon-oxygen layer during subsequent processing.
摘要翻译：描述了在图案化衬底上形成可流动的低k电介质膜的方法。该膜可以是硅 - 碳 - 氧（Si-C-O）层，其中硅和碳成分来自含硅和碳的前体，而氧可以来自在远程等离子体区域中活化的含氧前体。在沉积后不久，在固化之前通过暴露于含氢和氮的前体例如氨来处理硅 - 碳 - 氧层。处理可以从硅 - 碳 - 氧层去除残留的水分，并且可以使晶格在固化和随后的加工过程中更有弹性。该处理可以在随后的处理期间减少硅 - 碳 - 氧层的收缩。

2. 发明申请

WO2014158351A1 POST TREATMENT FOR CONSTANT REDUCTION WITH PORE GENERATION ON LOW-K DIELECTRIC FILMS 审中-公开
标题翻译：用于在低K电介质膜上进行孔生成的持续减少的后处理
公开(公告)号：WO2014158351A1
公开(公告)日：2014-10-02
申请号：PCT/US2014/014678
申请日：2014-02-04
申请人： APPLIED MATERIALS, INC.
发明人： YIM, Kang Sub , ARDALAN, Pendar , NGO, Sure , DEMOS, Alexandros T.
IPC分类号： H01L21/205
CPC分类号： H01L21/31058 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02214 , H01L21/02274 , H01L21/0234 , H01L21/02348 , H01L21/02351 , H01L21/02359 , H01L21/3105
摘要： A method and apparatus for depositing a low K dielectric film with one or more features is disclosed herein. A method of forming a dielectric layer can include positioning a substrate in a processing chamber, delivering a deposition gas to the processing chamber, depositing a dense organosilicon layer using the deposition gas on the surface of the substrate, the dense organosilicon layer comprising a porogenic carbon, transferring a pattern into the dense organosilicon layer, forming a pore-forming plasma from a reactant gas, exposing the dense organosilicon layer to the pore-forming plasma to create a porous organosilicon layer, wherein the pore-forming plasma removes at least a portion of the porogenic carbon and exposing the porous organosilicon layer to a desiccating post treatment.
摘要翻译：本文公开了一种用于沉积具有一个或多个特征的低K电介质膜的方法和装置。形成电介质层的方法可以包括将衬底定位在处理室中，将沉积气体输送到处理室中，使用沉积气体在衬底的表面上沉积致密的有机硅层，致密有机硅层包含致孔碳将图案转移到致密的有机硅层中，从反应气体形成成孔等离子体，将致密的有机硅层暴露于成孔等离子体以产生多孔有机硅层，其中成孔等离子体去除至少一部分的造孔碳，并将多孔有机硅层暴露于干燥后处理。

3. 发明申请

WO2007048108A3 MONOLITHICALLY-PUMPED ERBIUM-DOPED WAVEGUIDE AMPLIFIERS AND LASERS 审中-公开
标题翻译：单相泵浦的ERBIUM-DOPED波导放大器和激光器
公开(公告)号：WO2007048108A3
公开(公告)日：2007-12-13
申请号：PCT/US2006060075
申请日：2006-10-19
申请人： UNIV NOTRE DAME DU LAC , HALL DOUGLAS , MINGJUN HUANG
发明人： HALL DOUGLAS , MINGJUN HUANG
IPC分类号： H01L21/311
CPC分类号： H01L21/31666 , C03C13/048 , C03C17/23 , C03C25/6286 , C03C2217/228 , C03C2217/242 , C03C2218/32 , H01L21/02178 , H01L21/02233 , H01L21/02255 , H01L21/02321 , H01L21/02351 , H01L21/31155 , H01S3/0632 , H01S3/0637 , H01S3/0941 , H01S3/1608 , H01S3/17 , H01S3/175 , H01S5/026 , H01S5/18308 , H01S5/2004 , H01S5/40 , H01S2301/02
摘要： Disclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-doped oxide layer, The example method also includes annealing the substrate and the at least one AlGaAs oxide or InAlP oxide.
摘要翻译：公开了掺杂氧化物的方法。示例性方法包括在GaAs衬底上形成AlGaAs氧化物或InAlP氧化物中的至少一种，并且通过离子注入将铒掺入到至少一种AlGaAs氧化物或InAlP氧化物中以形成掺铒氧化物层。包括退火衬底和至少一种AlGaAs氧化物或InAlP氧化物。

4. 发明申请

WO2007046560B1 INORGANIC SUBSTRATE WITH A THIN SILICA TYPE GLASS LAYER, METHOD OF MANUFACTURING THE AFOREMENTIONED SUBSTRATE, COATING AGENT, AND A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：具有薄二氧化硅型玻璃层的无机基板，制造非曝光基板的方法，涂布剂和半导体器件
公开(公告)号：WO2007046560B1
公开(公告)日：2007-11-22
申请号：PCT/JP2006321587
申请日：2006-10-23
申请人： DOW CORNING TORAY CO LTD , DOW CORNING , HARIMOTO YUKINARI , ITOH MAKI , KATSOULIS ELIAS DIMITRIS
发明人： HARIMOTO YUKINARI , ITOH MAKI , KATSOULIS ELIAS DIMITRIS
IPC分类号： C23C18/02 , C23C18/14 , C23C20/06
CPC分类号： H01L21/3124 , C23C18/1212 , C23C18/122 , C23C18/1241 , C23C18/1275 , C23C18/1279 , C23C18/14 , C23C2222/20 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02351 , H01L21/31608
摘要： A method of manufacturing an inorganic substrate coated with a thin silica type glass layer of 2H to 9H pencil hardness, said method comprising the steps of: coating an inorganic substrate with a cyclic dihydrogenpolysiloxane and/or a hydrogenpolysiloxane represented by a specific unit formula, and curing it; an inorganic substrate coated with a thin silica type glass layer; a coating agent for an inorganic substrate that is composed of a cyclic dihydrogenpolysiloxane and/or a hydrogenpolysiloxane represented by a specific unit formula; and a semiconductor device having an inorganic substrate coated with a thin silica type glass layer.
摘要翻译：所述方法包括以下步骤：用环状二氢聚硅氧烷和/或由特定单元式表示的氢聚硅氧烷涂布无机基材，以及将具有2H至9H铅笔硬度的薄二氧化硅型玻璃层涂覆的无机基材的制造方法，固化它; 涂覆有薄二氧化硅型玻璃层的无机基材; 由环状二氢聚硅氧烷和/或由特定单元式表示的氢聚硅氧烷构成的无机基材用涂布剂; 以及具有涂覆有薄二氧化硅型玻璃层的无机基板的半导体器件。

5. 发明申请

WO2006043439A1 半導体加工用保護膜形成用塗布液、その調製方法およびこれより得られる半導体加工用保護膜审中-公开
标题翻译：用于形成用于半导体加工的保护膜的涂布液，其制备方法和用于其提供的半导体处理的保护膜
公开(公告)号：WO2006043439A1
公开(公告)日：2006-04-27
申请号：PCT/JP2005/018668
申请日：2005-10-11
申请人：触媒化成工業株式会社 , 江上美紀 , 荒尾弘樹 , 中島昭 , 小松通郎
发明人：江上美紀 , 荒尾弘樹 , 中島昭 , 小松通郎
IPC分类号： H01L21/312 , C09D183/04 , C09D183/02 , C08G77/04
CPC分类号： H01L21/02126 , C09D183/02 , C09D183/04 , H01L21/02203 , H01L21/02282 , H01L21/02351 , H01L21/3121 , Y10T428/249953
摘要：　高い膜強度と低い比誘電率を有するＣＭＰ犠牲膜やエッチング・ストッパー膜等の半導体加工用保護膜を形成するための塗布液、その調整方法および該塗布液より得られる半導体加工用保護膜に関する。（ａ）テトラアルキルオルソシリケート(TAOS)およびアルコキシシラン(AS)をテトラメチルアンモニウムハイドロオキサイド（TMAOH）および水の存在下で加水分解して得られるケイ素化合物、またはテトラアルキルオルソシリケート(TAOS)をテトラメチルアンモニウムハイドロオキサイド（TMAOH）および水の存在下で加水分解または部分加水分解した後、アルコキシシラン(AS)またはその加水分解物もしくは部分加水分解物と混合し、さらに必要に応じてこれらの一部または全部を加水分解して得られるケイ素化合物、（ｂ）有機溶媒、および（ｃ）水を含む液状組成物であり、しかも該液状組成物中に含まれる水の量が３５～６５重量％の範囲にあることを特徴とする半導体加工用保護膜形成用塗布液。
摘要翻译：本发明提供一种用于形成半导体加工用保护膜的涂布液，例如具有高膜强度和低比介电常数的CMP牺牲膜和蚀刻停止膜，其制备方法和半导体保护膜由涂布液形成的加工。用于形成用于半导体加工的保护膜的涂布液的特征在于包括（a）在四甲基氢氧化铵（TMAOH）和水的存在下水解原硅酸四烷基酯（TAOS）和烷氧基硅烷（AS）制备的硅化合物，或通过在四甲基氢氧化铵（TMAOH）和水的存在下水解或部分水解四烷基原硅酸盐（TAOS）制备的硅化合物，将水解产物或部分水解产物与烷氧基硅烷（AS）或其水解产物或部分水解产物混合，如果需要的话水解部分或全部混合物，（b）有机溶剂，和（c）水，所述液体组合物中所含的水的含量在35至65重量％的范围内。

6. 发明申请

WO02058128A1 METHOD AND APPARATURS FOR TREATING SUBSTRATE 审中-公开
标题翻译：用于处理基板的方法和装置
公开(公告)号：WO02058128A1
公开(公告)日：2002-07-25
申请号：PCT/JP2002/000268
申请日：2002-01-17
IPC分类号： H01L21/00 , H01L21/3105 , H01L21/312 , H01L21/316 , H01L21/31
CPC分类号： H01L21/67178 , H01L21/02137 , H01L21/02282 , H01L21/0234 , H01L21/02351 , H01L21/3105 , H01L21/3124 , H01L21/67109
摘要： A method of treating a substrate which comprises forming an interlayer insulating layer through application and irradiating the layer with an electron ray in a treatment chamber, thereby curing the interlayer insulating layer. The method allows an interlayer insulating layer to be cured in a markedly shorter time than that required for a conventional method.
摘要翻译：一种处理衬底的方法，包括通过在处理室中施加电子射线并照射所述层来形成层间绝缘层，从而固化所述层间绝缘层。该方法允许层间绝缘层以比常规方法所需的时间短得多的时间固化。

7. 发明申请

WO01048805A1 METHOD FOR CURING SPIN-ON DIELECTRIC FILMS UTILIZING ELECTRON BEAM RADIATION 审中-公开
标题翻译：用于固化电子束辐射的旋转电介质膜的方法
公开(公告)号：WO01048805A1
公开(公告)日：2001-07-05
申请号：PCT/US2000/035639
申请日：2000-12-29
IPC分类号： H01L21/3105 , H01L21/312 , H01L21/316 , H01L21/768
CPC分类号： H01L21/3105 , H01L21/02118 , H01L21/02126 , H01L21/02282 , H01L21/02351 , H01L21/31058 , H01L21/3121 , H01L21/3122 , H01L21/3124 , H01L21/316 , H01L21/76825 , H01L21/76828
摘要： An electron beam exposure method is described which provides a means of curing spin-on-glass or spin-on-polymer dielectric material formed on a semiconductor wafer. The dielectric material insulates the conductive metal layer and planarizes the topography in the process of manufacturing multilayered integrated circuits. The method utilizes a large area, uniform electron beam exposure system in a soft vacuum environment. A wafer coated with uncured dielectric material is irradiated with electrons of sufficient energy to penetrate the entire thickness of the dielectric material and is simultaneously heated by infrared heaters. By adjusting the process conditions, such as electron beam total dose and energy, temperature of the wafer, and ambient atmosphere, the properties of the cured dielectric material can be modified.
摘要翻译：描述了一种电子束曝光方法，其提供了固化在半导体晶片上形成的旋涂玻璃或旋涂聚合物电介质材料的方法。在制造多层集成电路的过程中，电介质材料绝缘导电金属层并平面化形貌。该方法在软真空环境中利用大面积均匀的电子束曝光系统。用未固化的介电材料涂覆的晶片被照射具有足够能量的电子以穿透介电材料的整个厚度，同时被红外加热器加热。通过调整工艺条件，例如电子束总剂量和能量，晶片的温度和环境气氛，可以改变固化的电介质材料的性质。

8. 发明申请

WO01024247A1 ELECTRON BEAM TREATMENT OF FLUORINATED SILICATE GLASS 审中-公开
标题翻译：氟化硅玻璃的电子束处理
公开(公告)号：WO01024247A1
公开(公告)日：2001-04-05
申请号：PCT/US2000/026390
申请日：2000-09-26
IPC分类号： C23C16/40 , H01L21/3105 , H01L21/316 , H01L21/768
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/3105 , H01L21/31629 , H01L21/76801 , H01L21/76825 , H01L21/76828
摘要： The invention pertains to dielectric films for the production of microelectronic devices. A relatively stabile fluorinated silicate glass film is produced by depositing a fluorinated silicate glass film onto a substrate and then exposing the fluorinated silicate glass film to electron beam radiation. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.
摘要翻译：本发明涉及用于制造微电子器件的绝缘膜。通过在衬底上沉积氟化硅酸盐玻璃膜然后将氟化硅酸盐玻璃膜暴露于电子束辐射来制备相对稳定的氟化硅酸盐玻璃膜。电子束曝光步骤通过用来自大面积电子束源的宽大的大束电子束辐射来全面暴露电介质层来进行。

9. 发明申请

WO99043025A1 LOW DIELECTRIC CONSTANT FILMS WITH HIGH GLASS TRANSITION TEMPERATURES MADE BY ELECTRON BEAM CURING 审中-公开
标题翻译：具有高电流光束固化的高玻璃化转变温度的低介电常数薄膜
公开(公告)号：WO99043025A1
公开(公告)日：1999-08-26
申请号：PCT/US1999/003997
申请日：1999-02-24
IPC分类号： C08G85/00 , B05D3/02 , B05D3/06 , H01L21/312
CPC分类号： H01L21/0212 , B05D3/0254 , B05D3/065 , B05D3/068 , H01L21/02282 , H01L21/02348 , H01L21/02351 , H01L21/312 , Y10S522/904 , Y10S522/905
摘要： Production of a dielectric coating on a substrate whereby a poly(arylene ethers) or fluorinated poly(arylene ethers) layer is cured by exposure to electron beam radiation. A wide area electron beam is used which causes chemical reactions to occur in the polymer structure which are thought to cause cross-links between polymer chains. The cross-links lead to higher mechanical strength and higher glass transition temperature, lower thermal expansion coefficient, greater thermal-chemical stability and greater resistance to aggressive organic solvents. The polymer layer may also be optionally heated, thermally annealed, and/or exposed to UV actinic light.
摘要翻译：在基底上制备电介质涂层，由此通过暴露于电子束辐射固化聚（亚芳基醚）或氟化聚（亚芳基醚）层。使用广泛的电子束，其导致聚合物结构中发生化学反应，这被认为导致聚合物链之间的交联。交联导致更高的机械强度和更高的玻璃化转变温度，更低的热膨胀系数，更高的热化学稳定性和更强的抗侵蚀性有机溶剂。聚合物层也可以任选地被加热，热退火和/或暴露于UV光化学光。

10. 发明申请

WO1997000535A1 ELECTRON-BEAM PROCESSED FILMS FOR MICROELECTRONICS STRUCTURES 审中-公开
标题翻译：用于微电子结构的电子束处理膜
公开(公告)号：WO1997000535A1
公开(公告)日：1997-01-03
申请号：PCT/US1996008678
申请日：1996-06-04
申请人： ALLIEDSIGNAL INC.
发明人： ALLIEDSIGNAL INC. , FORESTER, Lynn , HENDRICKS, Neil, H. , KYU-CHOI, Dong
IPC分类号： H01L21/316
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02271 , H01L21/02282 , H01L21/02351 , H01L21/3105 , H01L21/3122
摘要： An improved method for producing substrates coated with dielectric films for use in microelectronic applications wherein the films are processed by exposing the coated substrate surfaces to a flux of electron beam. Substrates cured via electron beam exposure possess superior dielectric properties, density, uniformity, thermal stability, and oxygen stability.
摘要翻译：一种用于生产用于微电子应用中的用介电膜涂覆的衬底的改进方法，其中通过将涂覆的衬底表面暴露于电子束通量来处理膜。通过电子束曝光固化的基板具有优异的介电性能，密度，均匀性，热稳定性和氧稳定性。

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