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1. 发明申请

WO2019240915A1 PROCESS CHAMBER PROCESS KIT WITH PROTECTIVE COATING 审中-公开
公开(公告)号：WO2019240915A1
公开(公告)日：2019-12-19
申请号：PCT/US2019/033259
申请日：2019-05-21
申请人： APPLIED MATERIALS, INC.
发明人： WU, Jian , LIU, Wei , WANG, Linlin , GUARINI, Theresa Kramer , BEVAN, Malcolm , HAWRYLCHAK, Lara
IPC分类号： H01J37/32 , H01L21/67 , H01L21/02 , H01L21/56
摘要： Embodiments described herein generally relate to a method and apparatus for fabricating a chamber component for a plasma process chamber. In one embodiment a chamber component used within a plasma processing chamber is provided that includes a metallic base material comprising a roughened non-planar first surface, wherein the roughened non-planar surface has an Ra surface roughness of between 4 micro-inches and 80 micro-inches, a planar silica coating formed over the roughened non-planar surface, wherein the planar silica coating has a surface that has an Ra surface roughness that is less than the Ra surface roughness of the roughened non-planar surface, a thickness between about 0.2 microns and about 10 microns, less than 1% porosity by volume, and contains less than 2E 12 atoms/centimeters 2 of aluminum.

2. 发明申请

WO2017180283A2 SEMICONDUCTOR PROCESSING CHAMBER 审中-公开
标题翻译：半导体加工室
公开(公告)号：WO2017180283A2
公开(公告)日：2017-10-19
申请号：PCT/US2017/022468
申请日：2017-03-15
申请人： APPLIED MATERIALS, INC.
发明人： HUNTER, Aaron Muir , BEHDJAT, Mehran , MERCHANT, Niraj , MCALLISTER, Douglas R. , IU, Dongming , CHAN, Kong Lung Samuel , HAWRYLCHAK, Lara
IPC分类号： H01L21/67 , H01L21/54 , H01L21/02
摘要： A semiconductor processing apparatus is described that has a body with a wall defining two processing chambers within the body; a passage through the wall forming a fluid coupling between the two processing chambers; a lid removably coupled to the body, the lid having a portal in fluid communication with the passage; a gas activator coupled to the lid outside the processing chambers, the gas activator having an outlet in fluid communication with the portal of the lid; a substrate support disposed in each processing chamber, each substrate support having at least two heating zones, each with an embedded heating element; a gas distributor coupled to the lid facing each substrate support; and a thermal control member coupled to the lid at an edge of each gas distributor.
摘要翻译：描述了一种半导体加工设备，其具有在本体内具有限定两个处理室的壁的本体; 穿过壁的通道在两个处理室之间形成流体耦合; 可移除地联接到所述主体的盖，所述盖具有与所述通道流体连通的入口; 气体激活器，耦合到处理室外部的盖子，气体激活器具有与盖子的入口流体连通的出口; 设置在每个处理室中的衬底支撑件，每个衬底支撑件具有至少两个加热区，每个加热区具有嵌入式加热元件; 耦合到面对每个衬底支撑件的盖的气体分配器; 以及在每个气体分配器的边缘连接到盖子的热控制构件。

3. 发明申请

WO2015009447A1 SUBSTRATE SUPPORT RING FOR MORE UNIFORM LAYER THICKNESS 审中-公开
标题翻译：基座支撑环更均匀的厚度
公开(公告)号：WO2015009447A1
公开(公告)日：2015-01-22
申请号：PCT/US2014/045112
申请日：2014-07-01
申请人： APPLIED MATERIALS, INC.
发明人： PAN, Heng , HAWRYLCHAK, Lara , OLSEN, Christopher, S.
IPC分类号： H01L21/683
CPC分类号： H01L21/02274 , H01L21/67248 , H01L21/68735
摘要： Embodiments of substrate support rings providing more uniform thickness of layers deposited or grown on a substrate are provided herein. In some embodiments, a substrate support ring includes: an inner ring with a centrally located support surface to support a substrate; and an outer ring extending radially outward from the support surface, wherein the outer ring comprises a reaction surface area disposed above and generally parallel to a support plane of the support surface, and wherein the reaction surface extends beyond the support surface by about 24 mm to about 45 mm.
摘要翻译：本文提供了在衬底上提供沉积或生长的层的更均匀厚度的衬底支撑环的实施例。在一些实施例中，衬底支撑环包括：具有中心定位的支撑表面以支撑衬底的内环; 以及从所述支撑表面径向向外延伸的外环，其中所述外环包括设置在所述支撑表面的支撑平面上方并且大致平行于所述支撑表面的支撑平面的反应表面区域，并且其中所述反应表面延伸超过所述支撑表面约24mm至约45毫米。

4. 发明申请

WO2013122874A1 METHODS AND APPARATUS FOR SELECTIVE OXIDATION OF A SUBSTRATE 审中-公开
标题翻译：用于选择性氧化底物的方法和装置
公开(公告)号：WO2013122874A1
公开(公告)日：2013-08-22
申请号：PCT/US2013/025577
申请日：2013-02-11
申请人： APPLIED MATERIALS, INC.
发明人： TJANDRA, Agus , OLSEN, Christopher S. , SWENBERG, Johanes , HAWRYLCHAK, Lara
IPC分类号： H01L21/318 , H01L21/316
CPC分类号： H01L21/67098 , H01L21/02238 , H01L21/02244 , H01L21/67109 , H01L21/67115 , H01L21/67248
摘要： Methods and apparatus for improving selective oxidation against metals in a process chamber are provided herein. In some embodiments, a method of oxidizing a first surface of a substrate disposed in a process chamber having a processing volume defined by one or more chamber walls may include exposing the substrate to an oxidizing gas to oxidize the first surface; and actively heating at least one of the one or more chamber walls to increase a temperature of the one or more chamber walls to a first temperature of at least the dew point of water while exposing the substrate to the oxidizing gas.
摘要翻译：本文提供了用于改善处理室中金属选择性氧化的方法和装置。在一些实施例中，一种氧化设置在具有由一个或多个室壁限定的处理容积的处理室中的衬底的第一表面的方法可以包括将衬底暴露于氧化气体以氧化第一表面; 并且主动地加热所述一个或多个室壁中的至少一个，以将所述一个或多个室壁的温度升至至少水的露点的第一温度，同时将所述衬底暴露于所述氧化气体。

5. 发明申请

WO2012024061A2 EXTENDED LIFE DEPOSITION RING 审中-公开
标题翻译：延长寿命沉积环
公开(公告)号：WO2012024061A2
公开(公告)日：2012-02-23
申请号：PCT/US2011/045223
申请日：2011-07-25
申请人： APPLIED MATERIALS, INC. , HAWRYLCHAK, Lara
发明人： HAWRYLCHAK, Lara
IPC分类号： H01L21/205 , H01L21/203
CPC分类号： B05B15/0437 , B05B12/22 , C23C16/4585 , H01L21/68735
摘要： A process kit for a semiconductor processing chamber is provided. In one embodiment, a process kit includes an annular deposition ring body comprising a trough recessed into an upper surface of the body wherein a lowest point of the trough extends to at least half of the thickness of the ring body as defined by a top wall and a bottom wall. In another embodiment, a process kit includes an annular deposition ring body comprising a sloped upper wall defining at least a portion of an upper surface of the body, wherein a peak of the sloped upper wall extends from an inner wall of the body to at least half of a distance between the inner wall and an outer wall of the body.
摘要翻译：提供用于半导体处理室的处理套件。在一个实施例中，处理套件包括环形沉积环主体，该环形沉积环主体包括凹入主体的上表面中的槽，其中槽的最低点延伸至由顶壁限定的环主体的厚度的至少一半，并且底壁。在另一个实施例中，处理套件包括环形沉积环主体，该环形沉积环主体包括限定主体的上表面的至少一部分的倾斜上壁，其中倾斜上壁的顶点从主体的内壁延伸至在内壁和身体外壁之间的一半距离。

6. 发明申请

WO2010115128A9 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
公开(公告)号：WO2010115128A9
公开(公告)日：2010-10-07
申请号：PCT/US2010/029815
申请日：2010-04-02
申请人： APPLIED MATERIALS, INC. , ALLEN, Adolph Miller , HAWRYLCHAK, Lara , XIE, Zhigang , RASHEED, Muhammand M. , WANG, Rongjun , TANG, Xianmin , LIU, Zhendong , GUNG, Tza-Jing , GANDIKOTA, Srinivas , CHANG, Mei , COX, Michael S. , YOUNG, Donny , SAVANDAIAH, Kirankumar , GE, Zhenbin
发明人： ALLEN, Adolph Miller , HAWRYLCHAK, Lara , XIE, Zhigang , RASHEED, Muhammand M. , WANG, Rongjun , TANG, Xianmin , LIU, Zhendong , GUNG, Tza-Jing , GANDIKOTA, Srinivas , CHANG, Mei , COX, Michael S. , YOUNG, Donny , SAVANDAIAH, Kirankumar , GE, Zhenbin
IPC分类号： H01L21/203 , C23C14/34
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

7. 发明申请

WO2019173002A1 FAST RESPONSE PEDESTAL ASSEMBLY FOR SELECTIVE PRECLEAN 审中-公开
公开(公告)号：WO2019173002A1
公开(公告)日：2019-09-12
申请号：PCT/US2019/014759
申请日：2019-01-23
申请人： APPLIED MATERIALS, INC.
发明人： HAWRYLCHAK, Lara , PRASAD, Chaitanya A.
IPC分类号： H01L21/683 , H01L21/687 , H01L21/67
摘要： Implementations of the present disclosure generally relate to an improved substrate support pedestal assembly. In one implementation, the substrate support pedestal assembly includes a shaft. The substrate support pedestal assembly further includes a substrate support pedestal, mechanically coupled to the shaft. The substrate support pedestal comprises a substrate support plate coated on a top surface with a ceramic material.

8. 发明申请

WO2017189146A1 NON-DISAPPEARING ANODE FOR USE WITH DIELECTRIC DEPOSITION 审中-公开
标题翻译：用于电介质沉积的非消失阳极
公开(公告)号：WO2017189146A1
公开(公告)日：2017-11-02
申请号：PCT/US2017/024749
申请日：2017-03-29
申请人： APPLIED MATERIALS, INC.
发明人： COX, Michael S. , HAWRYLCHAK, Lara , WEST, Brian T.
IPC分类号： H01J37/34 , C23C14/34
摘要： Embodiments of the invention generally relate to an anode for a semiconductor processing chamber. More specifically, embodiments described herein relate to a process kit including a shield serving as an anode in a physical deposition chamber. The shield has a cylindrical band, the cylindrical band having a top and a bottom, the cylindrical band sized to encircle a sputtering surface of a sputtering target disposed adjacent the top and a substrate support disposed at the bottom, the cylindrical band having an interior surface. A texture is disposed on the interior surface. The texture has a plurality of features. A shaded area is disposed in the feature wherein the shaded area is not visible to the sputtering target. A small anode surface is disposed in the shaded area.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的阳极。更具体地，本文描述的实施例涉及一种包括在物理沉积室中用作阳极的屏蔽的处理套件。所述屏蔽体具有圆柱形带，所述圆柱形带具有顶部和底部，所述圆柱形带的尺寸设置成环绕位于顶部附近的溅射靶的溅射表面和位于底部的基板支撑件，所述圆柱形带具有内表面。内表面上布置纹理。纹理具有多个特征。阴影区域设置在特征中，其中阴影区域对溅射目标不可见。一个小的阳极表面设置在阴影区域。

9. 发明申请

WO2015020791A1 IN-SITU REMOVABLE ELECTROSTATIC CHUCK 审中-公开
标题翻译：现场可拆卸静电卡盘
公开(公告)号：WO2015020791A1
公开(公告)日：2015-02-12
申请号：PCT/US2014/047656
申请日：2014-07-22
申请人： APPLIED MATERIALS, INC.
发明人： COX, Michael S. , HAWRYLCHAK, Lara , SANSONI, Steven V.
IPC分类号： H01L21/683 , H02N13/00 , B23Q3/15
CPC分类号： H01L21/6833 , Y10T29/49815
摘要： Embodiments described herein generally relate to an electrostatic chuck (ESC). The ESC may contain a first plurality of electrodes adapted to electrostatically couple a substrate to the ESC and a second plurality of electrodes adapted to electrostatically couple the ESC to a substrate support. Instead of being integrally disposed within the substrate support, the ESC may be easily removed from the substrate support and removed from a chamber for maintenance or replacement purposes.
摘要翻译：本文描述的实施例一般涉及静电卡盘（ESC）。 ESC可以包含适于将衬底静电耦合到ESC的第一多个电极和适于使ESC与衬底支撑件静电耦合的第二多个电极。代替整体地设置在基板支撑件内，ESC可以容易地从基板支撑件移除并从腔室移除以进行维护或替换。

10. 发明申请

WO2014082033A1 APPARATUS AND METHODS FOR BACKSIDE PASSIVATION 审中-公开
标题翻译：背部钝化的装置和方法
公开(公告)号：WO2014082033A1
公开(公告)日：2014-05-30
申请号：PCT/US2013/071673
申请日：2013-11-25
申请人： APPLIED MATERIALS, INC. , HAWRYLCHAK, Lara , TOBIN, Jeff
发明人： HAWRYLCHAK, Lara , TOBIN, Jeff
IPC分类号： H01L21/205 , H01L21/31
CPC分类号： H01L21/02252 , H01L21/02238 , H01L21/02247 , H01L21/6719
摘要： Provided apparatus and methods for back side passivation of a substrate. The systems comprise an elongate support with an open top surface forming a support ring so that when a substrate is on the support ring, a cavity is formed within the elongate support. A plasma generator is coupled to the cavity to generate a plasma within the cavity to deposit a passivation film on the back side of the substrate.
摘要翻译：提供衬底的背面钝化的设备和方法。该系统包括具有开口顶表面的细长支撑件，其形成支撑环，使得当基板位于支撑环上时，在细长支撑件内形成空腔。等离子体发生器耦合到空腔以在空腔内产生等离子体，以在衬底的背面上沉积钝化膜。

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