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1. 发明申请

WO2019133509A3 METHOD OF REDUCING LEAKAGE CURRENT OF STORAGE CAPACITORS FOR DISPLAY APPLICATIONS 审中-公开
公开(公告)号：WO2019133509A3
公开(公告)日：2019-07-04
申请号：PCT/US2018/067223
申请日：2018-12-21
申请人： APPLIED MATERIALS, INC.
发明人： ZHAI, Yujia , RUI, Xiangxin , ZHAO, Lai , CHOI, Soo Young , CHEN, Jrjyan Jerry
IPC分类号： H01L49/02 , H01L21/02
摘要： Embodiments of the present disclosure generally relate to a method for forming a metal-insulator-metal (MIM) capacitor for display applications. The method includes forming a metal electrode over a substrate, and exposing the metal electrode to a nitrogen containing plasma in a processing chamber. The substrate is maintained at a temperature ranging from about 20 degrees Celsius to about 200 degrees Celsius as the metal electrode is exposed to the nitrogen containing plasma, which converts a surface of the metal electrode to a nitride. The method further includes forming a high K dielectric layer on the nitride surface of the metal electrode in the same processing chamber. With the plasma treating of the metal electrode, leakage current of the MIM capacitor is reduced and the breakdown field of the MIM capacitor is improved.

2. 发明申请

WO2018017360A2 HIGH-K DIELECTRIC MATERIALS COMPRISING ZIRCONIUM OXIDE UTILIZED IN DISPLAY DEVICES 审中-公开
标题翻译：包含氧化锆的高K电介质材料用于显示装置中
公开(公告)号：WO2018017360A2
公开(公告)日：2018-01-25
申请号：PCT/US2017/041555
申请日：2017-07-11
申请人： APPLIED MATERIALS, INC.
发明人： RUI, Xiangxin , ZHAO, Lai , CHEN, Jrjyan Jerry , CHOI, Soo Young , ZHAI, Yujia
CPC分类号： H01L27/1255 , H01L27/1248 , H01L27/1259 , H01L29/4908
摘要： Embodiments of the disclosure generally provide methods of forming a capacitor layer or a gate insulating layer with high dielectric constant as well as low film current leakage and desired film qualities for display applications. In one embodiment, a thin film transistor structure includes a dielectric layer formed on a substrate, wherein the dielectric layer is a zirconium containing material comprising aluminum, and gate, source and drain electrodes formed on the substrate, wherein the gate, source and drain electrodes formed above or below the dielectric layer.
摘要翻译：本公开的实施例大体上提供了形成具有高介电常数以及用于显示器应用的低薄膜电流泄漏和期望的薄膜质量的电容器层或栅极绝缘层的方法。在一个实施例中，薄膜晶体管结构包括形成在衬底上的介电层，其中介电层是包含铝的含锆材料，以及形成在衬底上的栅极，源极和漏极，其中栅极，源极和漏极形成在介质层之上或之下。

3. 发明申请

WO2018017325A1 HYBRID HIGH-K DIELECTRIC MATERIAL FILM STACKS COMPRISING ZIRCONIUM OXIDE UTILIZED IN DISPLAY DEVICES 审中-公开
标题翻译：包含用于显示装置的氧化锆的混合高K电介质材料膜叠层
公开(公告)号：WO2018017325A1
公开(公告)日：2018-01-25
申请号：PCT/US2017/040718
申请日：2017-07-05
申请人： APPLIED MATERIALS, INC.
发明人： RUI, Xiangxin , ZHAO, Lai , CHEN, Jrjyan Jerry , CHOI, Soo Young , ZHAI, Yujia
IPC分类号： H01L29/786 , H01L21/02
CPC分类号： H01L27/1255 , H01L27/1222 , H01L27/1237 , H01L27/1248 , H01L27/1259 , H01L27/1262 , H01L28/55 , H01L29/4908 , H01L29/78675
摘要： Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with a high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include gate, source and drain electrodes formed on a substrate, and an insulating layer formed on a substrate, wherein the insulating layer is a hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer formed above or below the gate, source and drain electrodes.
摘要翻译：本发明的实施例大体上提供形成可用作具有高介电常数的电容器层或栅极绝缘层以及用于显示器应用的膜质量的混合膜叠层的方法。在一个实施例中，薄膜晶体管结构包括形成在衬底上的栅极，源极和漏极以及形成在衬底上的绝缘层，其中绝缘层是具有介电层的混合薄膜叠层，所述介电层包括设置在在栅极，源极和漏极之上或之下形成的界面层。

4. 发明申请

WO2023027706A1 PROCESS GAS CONTAINMENT USING ELASTIC OBJECTS MATED WITH REACTOR FRAMES 审中-公开
公开(公告)号：WO2023027706A1
公开(公告)日：2023-03-02
申请号：PCT/US2021/047596
申请日：2021-08-25
申请人： APPLIED MATERIALS, INC.
发明人： KHO, Jeffrey , ZHAO, Lai , RAJANNA, Manohara , SUN, Guangwei , HUH, Kwang Soo , SU, Zonghui
IPC分类号： C23C16/44 , C23C16/458
摘要： A deposition chamber system includes a reactor interface, a flow guide attached to the reactor interface, a reactor frame disposed underneath the reactor interface to secure the substrate, and an elastic object having a first end corresponding to a base attached to the reactor frame and a second end corresponding to a compressive body disposed underneath the reactor interface to form a process gas containment seal between the reactor interface and the reactor frame with a compressive force. The flow guide is one of an upstream flow guide to guide a process gas flow into a reactor for performing a deposition process with respect to a substrate loaded in the reactor, or a downstream flow guide to guide remnants out of the reactor after performing the deposition process.

5. 发明申请

WO2023277920A1 SYSTEM AND METHOD FOR DELIVERING PRECURSOR TO A PROCESS CHAMBER 审中-公开
公开(公告)号：WO2023277920A1
公开(公告)日：2023-01-05
申请号：PCT/US2021/040118
申请日：2021-07-01
申请人： APPLIED MATERIALS, INC.
发明人： SUN, Guangwei , KHO, Jeffrey A. , ZHAO, Lai , SUN, Zhelin , BEHDJAT, Mehran , XU, Ming , CHOI, Kenric T. , HUH, Kwang Soo
IPC分类号： C23C16/448 , H01J37/32 , C23C14/48
摘要： The present disclosure is directed to a precursor delivery system is provided having a vaporizer and a reservoir. The reservoir includes an upstream end in fluid communication with the vaporizer. A reservoir valve is in fluid communication with a downstream end of the reservoir and a final valve is disposed downstream of the reservoir valve. A buffer zone is defined between the reservoir valve and the final valve. A first gas inlet is coupled to the buffer zone. The first gas inlet is coupled to a buffer valve.

6. 发明申请

WO2015116433A1 CORNER SPOILER FOR IMPROVING PROFILE UNIFORMITY 审中-公开
标题翻译：用于改善轮廓均匀性的角撑板
公开(公告)号：WO2015116433A1
公开(公告)日：2015-08-06
申请号：PCT/US2015/012014
申请日：2015-01-20
申请人： APPLIED MATERIALS, INC.
发明人： ZHAO, Lai , FURUTA, Gaku , WANG, Qunhua , TINER, Robin L. , PARK, Beom Soo , CHOI, Soo Young , YADAV, Sanjay D.
IPC分类号： G02F1/13
CPC分类号： C23C16/45591 , C23C16/45559 , C23C16/45563 , C23C16/4585 , H01J37/32091 , H01J37/32623 , H01J37/32651
摘要： The present disclosure relates to a corner spoiler designed to decrease high deposition rates on corner regions of substrates by changing the gas flow. In one embodiment, a corner spoiler for a processing chamber includes an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is configured to change plasma distribution at a corner of a substrate in the processing chamber. The L-shaped body includes a first and second leg, wherein the first and second legs meet at an inside corner of the L-shaped body. The length of the first or second leg is twice the distance defined between the first or second leg and the inside corner. In another embodiment, a shadow frame for a depositing chamber includes a rectangular shaped body having a rectangular opening therethrough, and one or more corner spoilers coupled to the rectangular shaped body at corners of the rectangular shaped body.
摘要翻译：本发明涉及一种设计用于通过改变气体流量来降低基板拐角区域的高沉积速率的拐角扰流板。在一个实施例中，用于处理室的拐角扰流板包括由介电材料制成的L形主体，其中L形主体被配置为改变处理室中的基板角落处的等离子体分布。 L形本体包括第一和第二腿，其中第一和第二腿在L形体的内角处相交。第一腿或第二腿的长度是在第一腿或第二腿与内角之间限定的距离的两倍。在另一个实施例中，用于沉积室的阴影框架包括具有矩形开口的矩形体，以及在矩形体的角落处联接到矩形体的一个或多个拐角扰流板。

7. 发明申请

WO2023027707A1 PROCESS GAS CONTAINMENT USING ELASTIC OBJECTS MATED WITH REACTOR INTERFACES 审中-公开
公开(公告)号：WO2023027707A1
公开(公告)日：2023-03-02
申请号：PCT/US2021/047611
申请日：2021-08-25
申请人： APPLIED MATERIALS, INC.
发明人： KHO, Jeffrey , SHAO, Shouqian , CHEN, Jrjyan Jerry , SUN, Guangwei , HUH, Kwang Soo , ZHAO, Lai , SUN, Zhelin , SU, Zonghui
IPC分类号： C23C16/00 , C23C16/50
摘要： A deposition chamber system includes a reactor interface, a flow guide attached to the reactor interface, a reactor frame disposed underneath the reactor interface to secure a substrate, and an elastic object having a first end corresponding to a base attached to the reactor interface and a second end corresponding to a compressive body disposed above the reactor frame to form a process gas containment seal between the reactor interface and the reactor frame with a compressive force. The flow guide is one of an upstream flow guide to guide a process gas flow into a reactor for performing a deposition process with respect to a substrate loaded in the reactor, or a downstream flow guide to guide residual process gases out of the reactor after performing the deposition process.

8. 发明申请

WO2020046510A1 GAS DIFFUSER SUPPORT STRUCTURE FOR REDUCED PARTICLE GENERATION 审中-公开
公开(公告)号：WO2020046510A1
公开(公告)日：2020-03-05
申请号：PCT/US2019/043672
申请日：2019-07-26
申请人： APPLIED MATERIALS, INC.
发明人： LAU, Allen K. , TINER, Robin L. , ZHAO, Lai , CHOI, Soo Young
IPC分类号： C23C16/455 , C23C16/505
摘要： Embodiments of the present disclosure generally provide apparatus and methods for gas diffuser support structure for a vacuum chamber. The gas diffuser support structure comprises a backing plate having a central bore formed therethrough, an integrated cross structure formed in the central bore, and a gas deflector coupled to the cross structure by a single fastener.

9. 发明申请

WO2015016980A1 GAS DIFFUSER HOLE DESIGN FOR IMPROVING EDGE UNIFORMITY 审中-公开
标题翻译：气体扩散孔设计改善边缘均匀性
公开(公告)号：WO2015016980A1
公开(公告)日：2015-02-05
申请号：PCT/US2014/024963
申请日：2014-03-12
申请人： APPLIED MATERIALS, INC.
发明人： ZHAO, Lai , FURUTA, Gaku , WANG, Qunhua , CHOI, Soo Young , LEE, Dongsuh , PARK, Beom Soo , YANG, Hsiao-Lin
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C23C16/505 , C23C16/45565
摘要： In one embodiment, a diffuser for a deposition chamber includes a plate having edge regions, corner regions and a center region, and plurality of gas passages comprising an orifice hole are formed between an upstream side and a downstream side of the plate, wherein one or more of a length or a diameter of the orifice holes in one or more of the corner regions or the edge regions of the plate is different than a corresponding length or a corresponding diameter of the orifice holes in the center region of the plate.
摘要翻译：在一个实施例中，用于沉积室的扩散器包括具有边缘区域，拐角区域和中心区域的板，并且在板的上游侧和下游侧之间形成包括孔口的多个气体通道，其中一个或在板的一个或多个拐角区域或边缘区域中的孔的更多的长度或直径不同于板的中心区域中的孔口的对应的长度或相应的直径。

10. 发明申请

WO2014182433A1 MULTI-LAYER AMORPHOUS SILICON STRUCTURE WITH IMPROVED POLY-SILICON QUALITY AFTER EXCIMER LASER ANNEAL 审中-公开
标题翻译：多层非晶硅结构，具有改进的聚硅氧烷质量后激光雷达
公开(公告)号：WO2014182433A1
公开(公告)日：2014-11-13
申请号：PCT/US2014/034938
申请日：2014-04-22
申请人： APPLIED MATERIALS, INC.
发明人： WANG, Qunhua , ZHAO, Lai , CHOI, Soo, Young
IPC分类号： C23C16/44 , H01L21/205
CPC分类号： H01L21/0262 , C23C16/24 , C23C16/4405 , C23C16/56 , H01L21/02488 , H01L21/02532 , H01L21/02592 , H01L21/02675
摘要： The embodiments described herein generally relate to methods for forming a multi-layer amorphous silicon structure that may be used in thin film transistor devices. In one embodiment, a method includes positioning a substrate comprising a buffer layer in a process chamber, the process chamber comprising a processing region, forming a plurality of amorphous silicon layers and annealing the amorphous silicon layers to form a polycrystalline silicon layer. Forming the plurality of layers includes delivering a silicon-containing precursor and a first activation gas to the processing region to deposit a first amorphous silicon layer over the buffer layer, the silicon-containing precursor and the first activation gas being activated by a plasma and maintaining a continuous flow of the silicon-containing precursor while delivering a second activation gas, without the first activation gas, to the processing region to deposit a second silicon layer on the first silicon layer.
摘要翻译：本文描述的实施例通常涉及用于形成可用于薄膜晶体管器件的多层非晶硅结构的方法。在一个实施例中，一种方法包括将包括缓冲层的衬底定位在处理室中，所述处理室包括处理区域，形成多个非晶硅层并退火非晶硅层以形成多晶硅层。形成多个层包括将含硅前体和第一活化气体输送到处理区域以在缓冲层上沉积第一非晶硅层，含硅前体和第一活化气体被等离子体激活并维持连续流动的含硅前体，同时将没有第一活化气体的第二活化气体输送到处理区域，以在第一硅层上沉积第二硅层。

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