专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2014194069A2 RESISTIVE RANDOM-ACCESS MEMORY FORMED WITHOUT FORMING VOLTAGE 审中-公开
标题翻译：无电压形成的电阻随机存取存储器
公开(公告)号：WO2014194069A2
公开(公告)日：2014-12-04
申请号：PCT/US2014039990
申请日：2014-05-29
申请人： WANG SHIH-YUAN , WANG SHIH-PING
发明人： WANG SHIH-YUAN , WANG SHIH-PING
IPC分类号： G11C11/02
CPC分类号： H01L45/08 , G11C13/0004 , G11C13/0007 , G11C2213/15 , G11C2213/18 , G11C2213/51 , G11C2213/56 , G11C2213/77 , H01L27/2481 , H01L45/1226 , H01L45/1233 , H01L45/124 , H01L45/146 , H01L45/165 , H01L45/1683
摘要： Enhanced ion/vacancy mobility channels are descnbed for the resistive random access memory, memristor and phase change memory. Such channels provide more definitive conduction path than the more random conductive paths resulting from applied forming voltages.
摘要翻译：阻性随机存取存储器，忆阻器和相变存储器描述了增强的离子/空位迁移率通道。这样的通道提供比由施加的成形电压产生的更随机的导电路径更确定的传导路径。

2. 发明申请

WO2014190189A3 MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES 审中-公开
标题翻译：微结构增强吸收光敏装置
公开(公告)号：WO2014190189A3
公开(公告)日：2015-01-22
申请号：PCT/US2014039208
申请日：2014-05-22
申请人： WANG SHIH-YUAN , WANG SHIH-PING
发明人： WANG SHIH-YUAN , WANG SHIH-PING
IPC分类号： H01L31/02 , H01L31/0352 , H01L31/07
CPC分类号： H01L31/035272 , G02B6/122 , G02B2006/12097 , H01L23/66 , H01L31/02005 , H01L31/02019 , H01L31/022408 , H01L31/02327 , H01L31/02363 , H01L31/024 , H01L31/028 , H01L31/0304 , H01L31/03046 , H01L31/035227 , H01L31/054 , H01L31/0745 , H01L31/075 , H01L31/1055 , H01L31/107 , H01L31/1075 , H01L31/1804 , H01L31/184 , H01L31/1844 , H01L2223/6627 , Y02E10/52 , Y02E10/548
摘要： Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.
摘要翻译：描述了使用微结构增强半导体中的光子吸收的技术。诸如柱和/或孔的微结构有效地增加了有效的吸收长度，导致光子吸收更大。对于硅光电二极管和硅雪崩光电二极管，使用微结构进行吸收增强可以导致波长为850 nm的光子的带宽超过10 Gb / s，量子效率约为90％或更高。

3. 发明申请

WO2014190189A2 MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES 审中-公开
标题翻译：微结构增强吸收光敏器件
公开(公告)号：WO2014190189A2
公开(公告)日：2014-11-27
申请号：PCT/US2014039208
申请日：2014-05-22
申请人： WANG SHIH-YUAN , WANG SHIH-PING
发明人： WANG SHIH-YUAN , WANG SHIH-PING
IPC分类号： H01L31/06
CPC分类号： H01L31/035272 , G02B6/122 , G02B2006/12097 , H01L23/66 , H01L31/02005 , H01L31/02019 , H01L31/022408 , H01L31/02327 , H01L31/02363 , H01L31/024 , H01L31/028 , H01L31/0304 , H01L31/03046 , H01L31/035227 , H01L31/054 , H01L31/0745 , H01L31/075 , H01L31/1055 , H01L31/107 , H01L31/1075 , H01L31/1804 , H01L31/184 , H01L31/1844 , H01L2223/6627 , Y02E10/52 , Y02E10/548
摘要： Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.
摘要翻译：描述了使用微结构增强半导体中的光子吸收的技术。诸如支柱和/或孔的微结构有效地增加了有效的吸收长度，导致光子的更大的吸收。对于硅光电二极管和硅雪崩光电二极管，使用微结构进行吸收增强可以导致波长为850 nm的光子的带宽超过10 Gb / s，量子效率约为90％以上。

4. 发明申请

WO2006041737A3 RADIATION EMITTING STRUCTURES INCLUDING PHOTONIC CRYSTALS 审中-公开
标题翻译：包括光子晶体的辐射发射结构
公开(公告)号：WO2006041737A3
公开(公告)日：2009-03-12
申请号：PCT/US2005035328
申请日：2005-09-30
申请人： HEWLETT PACKARD DEVELOPMENT CO , WANG SHIH-YUAN
发明人： WANG SHIH-YUAN
IPC分类号： H01K1/06 , H01K1/10 , H01K1/14
CPC分类号： H01K3/02 , H01K1/06 , H01K1/10 , H01K1/14
摘要： Radiation emitting structures (110, 120, 130, 140, 150) that include an active radiatio emitter (111, 121, 141) and a passive photonic crystal structure (114, 134, 144, 154) surrounding the emitter are disclosed. The passive photonic crystal structure is transparent to wavelengths of electromagnetic radiation within the visible region of the electromagnetic spectrum. Also disclosed are incandescent lamps (110, 200) that include such radiation emitting structures.
摘要翻译：公开了包括有源辐射发射器（111,121,141）和围绕发射器的无源光子晶体结构（114,134,144,154）的辐射发射结构（110,120,130,140,150）。无源光子晶体结构对电磁光谱可见区域内的电磁辐射波长是透明的。还公开了包括这种辐射发射结构的白炽灯（110,200）。

5. 发明申请

WO2008048293A2 COMPOSITE MATERIAL WITH CONDUCTIVE STRUCTURES OF RANDOM SIZE, SHAPE, ORIENTATION, OR LOCATION 审中-公开
标题翻译：具有随机尺寸，形状，方位或位置的导电结构的复合材料
公开(公告)号：WO2008048293A2
公开(公告)日：2008-04-24
申请号：PCT/US2006044562
申请日：2006-11-17
申请人： HEWLETT PACKARD DEVELOPMENT CO , WANG SHIH-YUAN , BRATKOVSKI ALEXANDRE M
发明人： WANG SHIH-YUAN , BRATKOVSKI ALEXANDRE M
CPC分类号： G02F1/0063 , B82Y20/00 , G02B1/007 , G02B6/0229 , G02B6/1225 , G02F2202/30 , G02F2202/32 , G02F2202/36 , G02F2203/15 , Y10S977/779 , Y10S977/834
摘要： A composite material (102) with at least one of a negative effective permittivity and a negative effective permeability for incident radiation of at least one wavelength is described. The composite material (102) comprises conductive structures (104) that are substantially random with respect to at least one of size, shape, orientation, and location.
摘要翻译：描述了对于至少一个波长的入射辐射具有负的有效介电常数和负的有效磁导率中的至少一个的复合材料（102）。复合材料（102）包括相对于尺寸，形状，取向和位置中的至少一个基本上是随机的导电结构（104）。

6. 发明申请

WO2007001367A3 WAVELENGTH-TUNABLE EXCITATION RADIATION AMPLIFYING STRUCTURE AND METHOD 审中-公开
标题翻译：波长可调的激励辐射放大结构和方法
公开(公告)号：WO2007001367A3
公开(公告)日：2007-03-01
申请号：PCT/US2005032801
申请日：2005-09-13
申请人： HEWLETT PACKARD DEVELOPMENT CO , WANG SHIH-YUAN , ISLAM M SAIFUL , LI ZHIYONG
发明人： WANG SHIH-YUAN , ISLAM M SAIFUL , LI ZHIYONG
IPC分类号： G01N21/65
CPC分类号： G01N21/658 , G01J3/26
摘要： Wavelenght-tunable radiation amplifying structures (100, 200, 300) for Raman spectroscopy are disclosed that include resonant cavities (110, 210, 310) having Raman signal-enhancing structures (130, 230, 330) disposed therein. Also disclosed are systems (500, 600) that include the amplifying structures (100, 200, 300), and methods of performing spectroscopic analysis using the structures (100, 200, 300) and systems (500, 600).
摘要翻译：公开了用于拉曼光谱的波长可调辐射放大结构（100,200,300），其包括其中设置有拉曼信号增强结构（130,230,330）的谐振腔（110,210,310）。还公开了包括放大结构（100,200,300）的系统（500,600）以及使用结构（100,200,300）和系统（500,600）执行光谱分析的方法。

7. 发明申请

WO2006083310A3 NANOWIRE DEVICE WITH (111) VERTICAL SIDEWALLS AND METHOD OF FABRICATION 审中-公开
标题翻译：具有（111）垂直边的纳米器件和制造方法
公开(公告)号：WO2006083310A3
公开(公告)日：2006-10-05
申请号：PCT/US2005022699
申请日：2005-06-28
申请人： HEWLETT PACKARD DEVELOPMENT CO , ISLAM SAIFUL M , CHEN YONG , WANG SHIH-YUAN
发明人： ISLAM SAIFUL M , CHEN YONG , WANG SHIH-YUAN
IPC分类号： B81B7/00
CPC分类号： H01L27/1203 , B82Y10/00 , G11C2213/81 , H01L29/045 , H01L29/0665 , H01L29/0673 , H01L29/861
摘要： A nano-scale device 10, 20, 30, 60 and method 40, 50, 70 of fabrication provide a nanowire 14, 24, 34, 64 having (111) vertical sidewalls 14a, 22e, 34a, 64a. The nano-scale device includes a semiconductor-on-insulator substrate 12, 22, 32, 62 polished in a [110] direction, the nanowire, and an electrical contact 26, 35 at opposite ends of the nanowire 24, 34. The method 40, 50, 70 includes wet etching 42, 52, 72 a semiconductor layer 12a, 22a, 32a. 62a of the semiconductor-on-insulator substrate to form 44, 54 the nanowire 24, 34 extending between a pair of islands 22f, 32f in the semiconductor layer 22a, 32a. The method 50 further includes depositing 56 an electrically conductive material on the pair of islands to form the electrical contacts 26, 36. A nano-pn diode 60 includes the nanowire 64 as a first nano-electrode, a pn-junction 66 verically stacked on the nanowire 64, and a second nano-electrode 68 on a (110) horizontal planar end of the pn-junction. The nano-pn diode 60 may be fabricated in array of the diodes on the semiconductor-on-insulator substrate 62.
摘要翻译：具有（111）垂直侧壁14a，22e，34a，64a的纳米级器件10,20,30,60和制造方法40,50,70制成纳米线14,24,34,64。纳米级器件包括在[110]方向上抛光的绝缘体上半导体衬底12,22,32,62，纳米线和在纳米线24,34的相对端的电接触26,35。 40,50,70包括湿蚀刻42,52,72半导体层12a，22a，32a。 62a，以形成44,54在半导体层22a，32a中的一对岛状物22f，32f之间延伸的纳米线24,34。方法50还包括在该对岛上沉积56导电材料以形成电接触26,36。纳米pn二极管60包括作为第一纳米电极的纳米线64，纳米线64和在pn结的（110）水平平面端上的第二纳米电极68。可以在绝缘体上半导体衬底62上的二极管的阵列中制造纳米pn二极管60。

8. 发明申请

WO2009017769A3 MICRORESONATOR SYSTEM AND METHODS OF FABRICATING THE SAME 审中-公开
标题翻译：微型激光器系统及其制造方法
公开(公告)号：WO2009017769A3
公开(公告)日：2009-04-02
申请号：PCT/US2008009224
申请日：2008-07-30
申请人： HEWLETT PACKARD DEVELOPMENT CO , TAN MICHAEL , WANG SHIH-YUAN , STEWART DUNCAN , FATTAL DAVID
发明人： TAN MICHAEL , WANG SHIH-YUAN , STEWART DUNCAN , FATTAL DAVID
IPC分类号： H01S3/08 , H01S3/109
CPC分类号： H01S5/1075 , B82Y20/00 , G02B6/12007 , H01S5/021 , H01S5/0215 , H01S5/026 , H01S5/0422 , H01S5/1032 , H01S5/1042 , H01S5/2063 , H01S5/222 , H01S5/3211 , H01S5/34306
摘要： Various embodiments of the present invention are related to microresonator systems that can be used as a laser, a modulator, and a photodetector and to methods for fabricating the microresonator systems. In one embodiment, a microresonator system (100) comprises a substrate (106) having a top surface layer (104), at least one waveguide (114,116) embedded within the substrate (106), and a microdisk (102) having a top layer (118), an intermediate layer (122), a bottom layer (120), current isolation region (128), and a peripheral annular region (124,126). The bottom layer (120) of the microdisk (102) is in electrical communication with the top surface layer (104) of the substrate (106) and is positioned so that at least a portion of the peripheral annular region (124,126) is located above the at least one waveguide (114,116). The current isolation region (128) is configured to occupy at least a portion of a central region of the microdisk and has a relatively lower refractive index and relatively larger bandgap than the peripheral annular region.
摘要翻译：本发明的各种实施例涉及可用作激光器，调制器和光电检测器的微谐振器系统以及用于制造微谐振器系统的方法。在一个实施例中，微谐振器系统（100）包括具有顶表面层（104）的衬底（106），嵌入衬底（106）内的至少一个波导（114,116），以及具有顶层（118），中间层（122），底层（120），电流隔离区（128）和外围环形区（124,126）。微盘（102）的底层（120）与衬底（106）的顶表面层（104）电连通，并被定位成使得外围环形区域（124,126）的至少一部分位于上方该至少一个波导（114,116）。电流隔离区（128）被配置为占据微盘的中心区域的至少一部分并且具有比外围环形区域相对较低的折射率和相对较大的带隙。

9. 发明申请

WO2008045520A3 IMPRINT LITHOGRAPHY APPARATUS AND METHODS 审中-公开
标题翻译：印刷光刻设备和方法
公开(公告)号：WO2008045520A3
公开(公告)日：2008-06-19
申请号：PCT/US2007021767
申请日：2007-10-10
申请人： HEWLETT PACKAARD DEV COMPANY L , WANG SHIH-YUAN , WU WEI , YU ZHAONING
发明人： WANG SHIH-YUAN , WU WEI , YU ZHAONING
IPC分类号： G03F7/00 , G03F1/00
CPC分类号： G03F7/0002 , B29C43/021 , B29C2043/025 , B82Y10/00 , B82Y40/00
摘要： An imprint lithography apparatus including a service station (136).
摘要翻译：一种包括服务站（136）的压印光刻设备。

10. 发明申请

WO2007056603A3 MULTI-TIERED NETWORK FOR GATHERING DETECTED CONDITION INFORMATION 审中-公开
标题翻译：用于收集检测到的条件信息的多层网络
公开(公告)号：WO2007056603A3
公开(公告)日：2007-07-05
申请号：PCT/US2006044021
申请日：2006-11-08
申请人： HEWLETT PACKARD DEVELOPMENT CO , BRATKOVSKI ALEXANDRE M , LI ZHIYONG , LYON GEOFF , KUEKES PHILIP J , WANG SHIH-YUAN , WILLIAMS R STANLEY
发明人： BRATKOVSKI ALEXANDRE M , LI ZHIYONG , LYON GEOFF , KUEKES PHILIP J , WANG SHIH-YUAN , WILLIAMS R STANLEY
IPC分类号： H04L29/08
CPC分类号： G06K7/0008 , H04L67/12
摘要： A multi-tiered network (100, 100') for gathering detected condition information includes a first tier (102) having first tier nodes (104) and a second tier (106) having a second tier node (108). The second tier node (108) is operable to receive detected condition information from at least one of the first tier nodes (104) in a substantially autonomous manner. In addition, the second tier node (108) is operable to at least one of store, process, and transmit the detected condition information. The network (100, 100') also includes a third tier (110) having a third tier node (112) configured to receive the detected condition information and to at least one of store and process the detected condition information.
摘要翻译：用于收集检测到的状况信息的多层网络（100,100'）包括具有第一层节点（104）的第一层（102）和具有第二层节点（108）的第二层（106）。第二层节点（108）可操作来以基本上自主的方式从第一层节点（104）中的至少一个接收检测到的状况信息。另外，第二层节点（108）可操作用于存储，处理和传输检测到的状况信息中的至少一个。网络（100,100'）还包括具有第三层节点（112）的第三层（110），第三层节点（112）被配置为接收检测到的状况信息并存储和处理检测到的状况信息中的至少一个。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式