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1. 发明申请

WO2009017769A3 MICRORESONATOR SYSTEM AND METHODS OF FABRICATING THE SAME 审中-公开
标题翻译：微型激光器系统及其制造方法
公开(公告)号：WO2009017769A3
公开(公告)日：2009-04-02
申请号：PCT/US2008009224
申请日：2008-07-30
申请人： HEWLETT PACKARD DEVELOPMENT CO , TAN MICHAEL , WANG SHIH-YUAN , STEWART DUNCAN , FATTAL DAVID
发明人： TAN MICHAEL , WANG SHIH-YUAN , STEWART DUNCAN , FATTAL DAVID
IPC分类号： H01S3/08 , H01S3/109
CPC分类号： H01S5/1075 , B82Y20/00 , G02B6/12007 , H01S5/021 , H01S5/0215 , H01S5/026 , H01S5/0422 , H01S5/1032 , H01S5/1042 , H01S5/2063 , H01S5/222 , H01S5/3211 , H01S5/34306
摘要： Various embodiments of the present invention are related to microresonator systems that can be used as a laser, a modulator, and a photodetector and to methods for fabricating the microresonator systems. In one embodiment, a microresonator system (100) comprises a substrate (106) having a top surface layer (104), at least one waveguide (114,116) embedded within the substrate (106), and a microdisk (102) having a top layer (118), an intermediate layer (122), a bottom layer (120), current isolation region (128), and a peripheral annular region (124,126). The bottom layer (120) of the microdisk (102) is in electrical communication with the top surface layer (104) of the substrate (106) and is positioned so that at least a portion of the peripheral annular region (124,126) is located above the at least one waveguide (114,116). The current isolation region (128) is configured to occupy at least a portion of a central region of the microdisk and has a relatively lower refractive index and relatively larger bandgap than the peripheral annular region.
摘要翻译：本发明的各种实施例涉及可用作激光器，调制器和光电检测器的微谐振器系统以及用于制造微谐振器系统的方法。在一个实施例中，微谐振器系统（100）包括具有顶表面层（104）的衬底（106），嵌入衬底（106）内的至少一个波导（114,116），以及具有顶层（118），中间层（122），底层（120），电流隔离区（128）和外围环形区（124,126）。微盘（102）的底层（120）与衬底（106）的顶表面层（104）电连通，并被定位成使得外围环形区域（124,126）的至少一部分位于上方该至少一个波导（114,116）。电流隔离区（128）被配置为占据微盘的中心区域的至少一部分并且具有比外围环形区域相对较低的折射率和相对较大的带隙。

2. 发明申请

WO2009017770A3 MICRORESONANTOR SYSTEMS AND METHODS OF FABRICATING THE SAME 审中-公开
标题翻译：微型助剂系统及其制备方法
公开(公告)号：WO2009017770A3
公开(公告)日：2009-04-02
申请号：PCT/US2008009225
申请日：2008-07-30
申请人： HEWLETT PACKARD DEVELOPMENT CO , TAN MICHAEL , WANG SHIH-YUAN , STEWART DUNCAN , FATTAL DAVID
发明人： TAN MICHAEL , WANG SHIH-YUAN , STEWART DUNCAN , FATTAL DAVID
IPC分类号： H01S3/08 , H01S3/109
CPC分类号： H01S5/1075 , B82Y20/00 , G02B6/12007 , H01S5/026 , H01S5/0424 , H01S5/1032 , H01S5/1042 , H01S5/34306
摘要： Various embodiments of the present invention are related to microresonator systems and to methods of fabricating the microresonator systems. In one embodiment, a microresonator system (200) comprises a substrate (206) having a top surface layer (204) and at least one waveguide (214,216) embedded in the substrate and positioned adjacent to the top surface layer of the substrate. The microresonator system also includes a microresonator (202,402) having a top layer (218), an intermediate layer (222), a bottom layer (220), a peripheral region, and a peripheral coating (224). The bottom layer (220) of the microresonator is attached to and in electrical communication with the top surface layer (204) of the substrate. The microresonator is positioned so that at least a portion of the peripheral region is located above the at least one waveguide (214, 216). The peripheral coating (224) covers at least a portion of the peripheral surface and has a relatively lower index of refraction than the top, intermediate, and bottom layers of the microresonator.
摘要翻译：本发明的各种实施例涉及微谐振器系统和制造微谐振器系统的方法。在一个实施例中，微谐振器系统（200）包括具有顶表面层（204）和至少一个波导（214,216）的衬底（206），所述波导嵌入衬底中并且与衬底的顶表面层相邻定位。微谐振器系统还包括具有顶层（218），中间层（222），底层（220），周边区域和周边涂层（224）的微谐振器（202,402）。微谐振器的底层（220）附着于基底的顶表面层（204）并与之电连通。微谐振器被定位成使得外围区域的至少一部分位于至少一个波导（214,216）的上方。外围涂层（224）覆盖周边表面的至少一部分并且具有比微谐振器的顶层，中间层和底层低的折射率。

3. 发明申请

WO2008013778A3 COMPENSATION FOR DISTORTION IN CONTACT LITHOGRAPHY 审中-公开
标题翻译：补偿联系人LITHOGRAPHY的失败
公开(公告)号：WO2008013778A3
公开(公告)日：2008-05-08
申请号：PCT/US2007016580
申请日：2007-07-24
申请人： HEWLETT PACKARD DEVELOPMENT CO , WU WEI , STEWART DUNCAN , WANG SHIH-YUAN , WILLIAMS R STANLEY
发明人： WU WEI , STEWART DUNCAN , WANG SHIH-YUAN , WILLIAMS R STANLEY
IPC分类号： G03F7/00 , B29C59/02
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method of contact lithography includes predicting distortions likely to occur in transferring a pattern from a mold (110) to a substrate (130) during a contact lithography process: and modifying the mold (110) to compensate for the distortions. A contact lithography system includes a design subsystem (210) configured to generate data describing a lithography pattern: an analysis subsystem (220) configured to identify one or more distortions likely to occur when using a mold (110) created from the data; and a mold modification subsystem (230) configured to modify the data to compensate for the one or more distortions identified by the analysis subsystem (220).
摘要翻译：接触光刻的方法包括预测在接触光刻过程期间将图案从模具（110）转移到衬底（130）时可能发生的变形;以及修改模具（110）以补偿变形。接触光刻系统包括设计子系统（210），其被配置为生成描述光刻图案的数据：分析子系统（220），其被配置为识别当使用由所述数据创建的模具（110）时可能发生的一个或多个失真; 以及模具修改子系统（230），其被配置为修改所述数据以补偿由所述分析子系统（220）识别的所述一个或多个失真。

4. 发明申请

WO2009008923A3 METHODS OF MAKING NANO-SCALE STRUCTURES HAVING CONTROLLED SIZE, NANOWIRE STRUCTURES AND METHODS OF MAKING THE NANOWIRE STRUCTURES 审中-公开
标题翻译：纳米结构纳米结构的制备方法，纳米结构和纳米结构的制备方法
公开(公告)号：WO2009008923A3
公开(公告)日：2009-08-20
申请号：PCT/US2008004423
申请日：2008-04-02
申请人： HEWLETT PACKARD DEVELOPMENT CO , KOBAYASHI NOBUHIKO , WU WEI , STEWART DUNCAN , SHARMA SHASHANK , WANG SHIH-YUAN , WILLIAMS R STANLEY
发明人： KOBAYASHI NOBUHIKO , WU WEI , STEWART DUNCAN , SHARMA SHASHANK , WANG SHIH-YUAN , WILLIAMS R STANLEY
IPC分类号： B82B3/00 , B82B1/00
CPC分类号： H01L31/035281 , B82Y10/00 , B82Y30/00 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L31/036 , H01L31/09 , H01L31/101 , H01L31/105 , Y02E10/50 , Y10S977/762 , Y10S977/814
摘要： Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures (200, 300, 400, 500, 600. 700) that include one or ore nanowires (104, 204, 304, 404, 504, 604, 704) are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure.
摘要翻译：公开了制造具有可控尺寸的纳米级半导体结构的方法。还公开了包括一个或多个纳米线（104,204,304,404,504,604,704）的半导体结构（200,300,400,500,600,700）。纳米线可以包括钝化层或具有中空管结构。

5. 发明申请

WO2009002524A2 ELECTRIC-FIELD-ENHANCEMENT STRUCTURE AND DETECTION APPARATUS USING SAME 审中-公开
标题翻译：使用相同的电场增强结构和检测装置
公开(公告)号：WO2009002524A2
公开(公告)日：2008-12-31
申请号：PCT/US2008007934
申请日：2008-06-25
申请人： HEWLETT PACKARD DEVELOPMENT CO , FATTAL DAVID , LI ZHIYONG , TONG WILLIAM , STEWART DUNCAN , BLACXSTOCK JASON
发明人： FATTAL DAVID , LI ZHIYONG , TONG WILLIAM , STEWART DUNCAN , BLACXSTOCK JASON
IPC分类号： G01J3/44
CPC分类号： G02B6/1226 , B82Y15/00 , B82Y20/00 , G01N21/35 , G01N21/554 , G01N21/658 , G02B5/008
摘要： Various aspects of the prsent invention are directed to electric-field-enhancement structures (100) and detection apparatuses (600, 700, 800) that employ such electric-field-enhancement structures. In one aspect of the present invention, an electric-field-enhancement structure (100) includes a substrate (102) having a surface (104). The substrate (102) is capable of supporting a planar mode (114) having a planar-mode frequency. A plurality of nanofeatures (106) is associated with the surface (104), and each of nanofeatures (106) exhibits a localized-surface-plasmon mode (116) having a localized-surface-plasmon frequency approximately equal to the planar-mode frequency.
摘要翻译：本发明的各个方面涉及采用这种电场增强结构的电场增强结构（100）和检测装置（600,700,800）。在本发明的一个方面，电场增强结构（100）包括具有表面（104）的基底（102）。基板（102）能够支撑具有平面模式频率的平面模式（114）。多个纳米尺度（106）与表面（104）相关联，并且纳米尺度（106）中的每一个表现出具有近似等于平面模式频率的局部表面等离子体激元频率的局部表面等离子体模式（116）。

6. 发明申请

WO2006115968A3 ACTIVE INTERCONNECTS AND CONTROL POINTS IN INTEGRATED CIRCUITS 审中-公开
标题翻译：集成电路中的主动互连和控制点
公开(公告)号：WO2006115968A3
公开(公告)日：2007-08-16
申请号：PCT/US2006014856
申请日：2006-04-19
申请人： HEWLETT PACKARD DEVELOPMENT CO , WILLIAMS R STANLEY , KUEKES PHILLIP J , PERNER FREDERICK A , SNIDER GREGORY S , STEWART DUNCAN
发明人： WILLIAMS R STANLEY , KUEKES PHILLIP J , PERNER FREDERICK A , SNIDER GREGORY S , STEWART DUNCAN
IPC分类号： H01L21/66
CPC分类号： H05K7/1092 , H01L23/5228 , H01L2924/0002 , H01L2924/00
摘要： In various embodiments of the present invention, tunable resistors (1102) are introduced at the interconnect layer of the integrated circuits (102) in order to provide a means for adjusting internal voltage and/or current levels within the integrated circuit to repair defective components or to configure the integrated circuit following manufacture. For example, when certain internal components, such as transistors, do not have specified electronics characteristics due to manufacturing defects, adjustment of the variable resistances of the tunable resistors (1102) included in the interconnect layer of integrated circuits according to embodiments of the present invention can be used to adjust internal voltage and/or levels in order to ameliorate the defective components. In other cases, the tunable resistors may be used as switches to configure integrated circuit components, including individual transistors and logic gates as well as larger, hierarchically structured functional modules and domains. In some cases, components and modules may be turned off, while, in other cases, components and modules may be turned on.
摘要翻译：在本发明的各种实施例中，可调谐电阻器（1102）被引入集成电路（102）的互连层，以便提供用于调整集成电路内的内部电压和/或电流水平以修复有缺陷的部件或配置后续制造的集成电路。例如，当某些内部组件（例如晶体管）由于制造缺陷而没有指定的电子特性时，根据本发明的实施例调整包括在集成电路的互连层中的可调电阻器（1102）的可变电阻可以用于调整内部电压和/或电平，以改善有缺陷的部件。在其他情况下，可调谐电阻器可以用作开关以配置集成电路部件，包括单独的晶体管和逻辑门以及更大的分层结构的功能模块和域。在某些情况下，可能会关闭组件和模块，而在其他情况下，可能会打开组件和模块。

7. 发明申请

WO2008045545A3 DEFORMATION-BASED CONTACT LITHOGRAPHY SYSTEMS, APPARATUS AND METHODS 审中-公开
标题翻译：基于变形的接触光刻系统，装置和方法
公开(公告)号：WO2008045545A3
公开(公告)日：2008-10-09
申请号：PCT/US2007021850
申请日：2007-10-12
申请人： HEWLETT PACKARD DEVELOPMENT CO , STEWART DUNCAN , WALMSLEY ROBERT G , HARTWELL PETER , WU WEI
发明人： STEWART DUNCAN , WALMSLEY ROBERT G , HARTWELL PETER , WU WEI
IPC分类号： G03F7/00 , G03F1/14
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F1/38 , G03F1/50
摘要： A pattern tool (200 or 200a) and/or substrate (300 or 300a) including one or more strain control regions (208 or 308) to prevent deformation-related misalignment.
摘要翻译：包括一个或多个应变控制区域（208或308）的图案工具（200或200a）和/或衬底（300或300a）以防止与变形有关的未对准。

8. 发明申请

WO2008013683A3 CONTROLLABLE SURFACE ENHANCED RAMAN SPECTROSCOPY 审中-公开
标题翻译：可控表面增强拉曼光谱
公开(公告)号：WO2008013683A3
公开(公告)日：2008-05-15
申请号：PCT/US2007015961
申请日：2007-07-11
申请人： HEWLETT PACKARD DEVELOPMENT CO , BRATKOVSKI ALEXANDRE , STEWART DUNCAN
发明人： BRATKOVSKI ALEXANDRE , STEWART DUNCAN
IPC分类号： G01N21/65 , G01J3/44
CPC分类号： G01N21/658
摘要： An apparatus and related methods for facilitating surface-enhanced Raman spectroscopy (SERS) is described. The apparatus comproses a SERS-active structure (102) near which a plurality of analyte molecules (A) are disposed and an actuation device (112) in actuable communication with the SERS-active structure (102) to deform the SERS-active structure (102) while the analyte molecules (A) are disposed therenear. The deformation of the SERS-active structure (102) varies an intensityof radiation Raman-scattered from the analyte molecules (A).
摘要翻译：描述了用于促进表面增强拉曼光谱（SERS）的设备和相关方法。该装置压缩SERS活性结构（102），其附近设置有多个分析物分子（A），以及与SERS活性结构（102）可促动连通以使SERS活性结构变形的致动装置（112） 102），而分析物分子（A）置于其附近。 SERS活性结构（102）的变形改变从分析物分子（A）辐射的拉曼散射强度。

9. 发明申请

WO2007089802A2 TUNNELING-RESISTOR-JUNCTION-BASED MICROSCALE/NANOSCALE DEMULTIPLEXER ARRAYS 审中-公开
标题翻译：基于隧穿 - 电阻 - 结点的微型/纳米级解复用器阵列
公开(公告)号：WO2007089802A2
公开(公告)日：2007-08-09
申请号：PCT/US2007002577
申请日：2007-01-30
申请人： HEWLETT PACKARD DEVELOPMENT CO , ROBINETT WARREN , SNIDER GREGORY S , STEWART DUNCAN , STRAZNICKY JOSEPH
发明人： ROBINETT WARREN , SNIDER GREGORY S , STEWART DUNCAN , STRAZNICKY JOSEPH
CPC分类号： G11C8/10 , G11C13/0023 , H03M13/51
摘要： Various embodiments of the present invention are directed to demultiplexers that include tunneling resistor nanowire junctions, and to nanowire addressing methods for reliably addressing nanowire signal lines in nanoscale and mixed-scale demultiplexers. In one embodimentof the present invention, an encoder-demulriplexer comprises a number of input signal lines and an encoder (1304) that generates an n-bit-constant-weight-code code-word internal address (1320, 1506, 1704) for each different input address (1318, 1702) received on the input signal lines. The encoder-demultiplexer also includes n microscale signal lines (1306-1311) on which an n-bit-constant-weight-code code word internal address is out put by the encoder and a number of encoder-demultiplexer-addressed nanowire signal lines interconnected with then microscale signal lines (1306-1311) via tunneling resistor junctions, the encoder-demultiplexer-addressed nanowire signal lines each associated with an n-bit-constant-weight-code code-word internal adress (1320, 1506, 1704).
摘要翻译：本发明的各种实施例涉及包括隧道电阻器纳米线结的解复用器，并且涉及用于在纳米级和混合尺度解复用器中可靠地寻址纳米线信号线的纳米线寻址方法。在本发明的一个实施例中，编码器 - 解复用器包括多个输入信号线和编码器（1304），编码器（1304）为每个输入信号线生成n位恒定加权码字内部地址（1320,1506,1704）在输入信号线上接收不同的输入地址（1318,1702）。编码器 - 解复用器还包括n个微型信号线（1306-1311），编码器输出n位恒定加权码字内部地址，并且编码器 - 解复用器寻址的纳米线信号线互连与经由隧道电阻器结的微米级信号线（1306-1311）相连，所述编码器 - 解复用器寻址的纳米线信号线均与n位恒定重量码码字内部地址（1320,1506,1704）相关联。

10. 发明申请

WO2008054400A3 CONTROL LAYER FOR A NANOSCALE ELECTRONIC SWITCHING DEVICE 审中-公开
标题翻译：纳米电子开关器件的控制层
公开(公告)号：WO2008054400A3
公开(公告)日：2008-08-21
申请号：PCT/US2006043687
申请日：2006-11-08
申请人： HEWLETT PACKARD DEVELOPMENT CO , STEWART DUNCAN , OHLBERG DOUGLAS A , WILLIAMS STANLEY R , KUEKES PHILIP J
发明人： STEWART DUNCAN , OHLBERG DOUGLAS A , WILLIAMS STANLEY R , KUEKES PHILIP J
IPC分类号： G11C13/02
CPC分类号： G11C13/0009 , G11C2213/55 , G11C2213/56 , G11C2213/77 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/14 , H01L45/142 , H01L45/143 , H01L45/146 , H01L51/0591
摘要： A control layer (26, 26', 28, 28', 28") for use in a junction of a nanoscale electronic switching device (10) is disclosed. The control layer (26, 26', 28, 28', 28") includes a material that is chemically compatible with a connecting layer (16) and at least one electrode (12, 14) in the nanoscale switching device (10). The control layer (26, 26', 28, 28', 28") is adapted to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device (10).
摘要翻译：本发明公开了一种用于纳米级电子开关装置（10）的接合处的控制层（26,26'，28,28'，28“），控制层（26,26'，28,28'，28” ）包括与纳米级开关装置（10）中的连接层（16）和至少一个电极（12,14）化学兼容的材料。控制层（26,26'，28,28'，28“）适于在装置（10）的操作期间控制电化学反应路径，电物理反应路径及其组合中的至少一个。

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