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1. 发明申请

WO2019190964A1 WAFER CARRIER HAVING THERMAL COVER FOR CHEMICAL VAPOR DEPOSITION 审中-公开
公开(公告)号：WO2019190964A1
公开(公告)日：2019-10-03
申请号：PCT/US2019/023838
申请日：2019-03-25
申请人： VEECO INSTRUMENTS, INC.
发明人： KRISHNAN, Sandeep , RASHKOVSKY, Yuliy , GURARY, Alexander , CHIN, Leo , DESHPANDE, Mandar
IPC分类号： H01L21/673 , H01L21/687 , H01L21/67
摘要： A wafer carrier as described and claimed herein includes a thermal cover and a plurality of platforms with corresponding radially inner and outer pedestals.

2. 发明申请

WO2023034226A1 WAFER CARRIER ASSEMBLY WITH PEDESTAL AND COVER RESTRAINT ARRANGEMENTS THAT CONTROL THERMAL GAPS 审中-公开
公开(公告)号：WO2023034226A1
公开(公告)日：2023-03-09
申请号：PCT/US2022/041914
申请日：2022-08-29
申请人： VEECO INSTRUMENTS INC.
发明人： KRISHNAN, Sandeep , MITROVIC, Bojan , ARMOUR, Eric, A. , RASHKOVSKY, Yuliy , MAXWELL, Robert, S. , VAN DOREN, Matthew, J.
IPC分类号： C30B25/12 , H01L21/687
摘要： A wafer carrier assembly as described herein improves thermal control across a top surface thereof to maintain highly controlled deposition locations and thicknesses.

3. 发明申请

WO2017031106A1 PROCESS-SPECIFIC WAFER CARRIER CORRECTION TO IMPROVE THERMAL UNIFORMITY IN CHEMICAL VAPOR DEPOSITION SYSTEMS AND PROCESSES 审中-公开
标题翻译：过程特殊波载波校正提高化学蒸气沉积系统和工艺中的热均匀性
公开(公告)号：WO2017031106A1
公开(公告)日：2017-02-23
申请号：PCT/US2016/047151
申请日：2016-08-16
申请人： VEECO INSTRUMENTS INC.
发明人： URBAN, Lukas , KRISHNAN, Sandeep
IPC分类号： H01L21/02 , H01L21/324 , H01L21/205
CPC分类号： G06F17/5009 , C23C16/4584 , C23C16/52 , G06F2217/80
摘要： Improvements to the heating uniformity of a wafer carrier for a chemical vapor deposition (CVD) system can be made based on a computational thermal model built according physical and operational characteristics of the CVD system. Operation of the thermal model is simulated, where a process recipe to be carried out on the CVD system is modeled, including heat transfers taking place in the virtual CVD system, to produce a set of thermal-spatial non- uniformities in at least one region of interest of a virtual wafer carrier. Structural corrections to be made to the pocket floor of each of the at least one wafer retention pocket are determined based on the set of thermal-spatial non-uniformities and on a predefined thermal-pocket floor relation that defines at least one design rule for correcting the pocket floor to achieve an increase in thermal uniformity throughout the at least one region of interest.
摘要翻译：可以基于根据CVD系统的物理和操作特性构建的计算热模型来进行用于化学气相沉积（CVD）系统的晶片载体的加热均匀性的改进。模拟热模型的操作，其中将对CVD系统进行的处理配方进行建模，包括在虚拟CVD系统中发生的热传递，以在至少一个区域中产生一组热空间非均匀性感兴趣的虚拟晶片载体。基于热 - 空间不均匀性的集合以及限定了用于校正的至少一个设计规则的预定义的热袋底层关系来确定要对至少一个晶片保持袋中的每一个的口袋地板进行结构校正口袋地板以实现整个所述至少一个感兴趣区域的热均匀性的增加。

4. 发明申请

WO2014197715A1 IMPROVED WAFER CARRIER HAVING THERMAL UNIFORMITY-ENHANCING FEATURES 审中-公开
标题翻译：具有热均质增强特性的改进型散热器
公开(公告)号：WO2014197715A1
公开(公告)日：2014-12-11
申请号：PCT/US2014/041134
申请日：2014-06-05
申请人： VEECO INSTRUMENTS, INC.
发明人： ARMOUR, Eric , KRISHNAN, Sandeep , ZHANG, Alex , MITROVIC, Bojan , GURARY, Alexander
IPC分类号： H01L21/205 , H01L21/324
CPC分类号： C30B25/12 , C23C16/4584 , C23C16/4586 , C23C16/46 , C30B25/105 , Y10T29/49826
摘要： A wafer carrier assembly for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition (CVD), the wafer carrier assembly includes a wafer carrier body formed symmetrically about a central axis, and including a generally planar top surface that is situated perpendicularly to the central axis and a planar bottom surface that is parallel to the top surface. At least one wafer retention pocket is recessed in the wafer carrier body from the top surface. Each of the at least one wafer retention pocket includes a floor surface and a peripheral wall surface that surrounds the floor surface and defines a periphery of that wafer retention pocket. At least one thermal control feature includes an interior cavity or void formed in the wafer carrier body and is defined by interior surfaces of the wafer carrier body.
摘要翻译：一种晶片载体组件，用于通过化学气相沉积（CVD）在一个或多个晶片上生长外延层的系统中，所述晶片载体组件包括围绕中心轴对称地形成的晶片载体主体，并且包括大致平坦的顶表面，垂直于中心轴定位，平面底面平行于顶面。至少一个晶片保留袋从顶表面凹陷在晶片载体主体中。所述至少一个晶片保留袋中的每一个包括地板表面和围绕所述地板表面并限定所述晶片保持袋的周边的周壁表面。至少一个热控制特征包括形成在晶片载体主体中并由晶片载体主体的内表面限定的内腔或空隙。

5. 发明申请

WO2014143703A1 WAFER CARRIER HAVING PROVISIONS FOR IMPROVING HEATING UNIFORMITY IN CHEMICAL VAPOR DEPOSITION SYSTEMS 审中-公开
标题翻译：具有提高化学蒸气沉积系统加热均匀性的滚动承载器
公开(公告)号：WO2014143703A1
公开(公告)日：2014-09-18
申请号：PCT/US2014/027773
申请日：2014-03-14
申请人： VEECO INSTRUMENTS, INC.
发明人： KRISHNAN, Sandeep , QUINN, William, E. , MONTGOMERY, Jeffrey, S. , MANGUM, Joshua , URBAN, Lukas
IPC分类号： H01L21/205 , H01L21/324
CPC分类号： C30B25/12 , B23P19/04 , C23C16/4584 , C23C16/4585 , H01L21/68728 , H01L21/68735 , H01L21/68764 , H01L21/68771 , Y10T29/49826
摘要： A wafer carrier and methods of making the same for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. A thermally-insulating spacer is situated at least partially in the at least one wafer retention pocket and arranged to maintain a spacing between the peripheral wall surface and the wafer, the spacer being constructed from a material having a thermal conductivity less than a thermal conductivity of the wafer carrier such that the spacer limits heat conduction from portions of the wafer carrier body to the wafer. The wafer carrier further includes a spacer retention feature that engages with the spacer and includes a surface oriented to prevent centrifugal movement of the spacer when subjected to rotation about the central axis.
摘要翻译：一种晶片载体及其制造方法，用于通过化学气相沉积在一个或多个晶片上生长外延层的系统中。晶片载体包括凹入其体内的晶片保留孔。隔热隔离物至少部分地位于至少一个晶片保持袋中并且被布置成保持周壁表面和晶片之间的间隔，该隔离物由导热率小于热导率的材料构成晶片载体使得间隔物限制从晶片载体的部分到晶片的热传导。晶片载体还包括间隔件保持部件，其与间隔件接合并且包括定向成防止间隔件围绕中心轴旋转时的离心运动的表面。

6. 发明申请

WO2013142030A1 KEYED WAFER CARRIER 审中-公开
标题翻译：键盘拖车
公开(公告)号：WO2013142030A1
公开(公告)日：2013-09-26
申请号：PCT/US2013/028572
申请日：2013-03-01
申请人： VEECO INSTRUMENTS INC.
发明人： KRISHNAN, Sandeep , MOY, Keng , GURARY, Alexander, I. , KING, Matthew , BOGUSLAVSKIY, Vadim , KROMMENHOEK, Steven
IPC分类号： H01L21/683 , H01L21/205 , C23C16/458
CPC分类号： C23C16/4584 , C23C16/4586 , C23C16/46 , H01L21/6719 , H01L21/68764 , H01L21/68771 , H01L21/68792
摘要： A structure (10) for a chemical vapor deposition reactor desirably includes a reaction chamber (12) having an interior (26), a spindle (30) mounted in the reaction chamber, and a wafer carrier (40) releasably mounted onto the spindle for rotation therewith. The spindle desirably has a shaft (36) extending along a vertical rotational axis (32) and a key (80) projecting outwardly from the shaft. The wafer carrier (40) preferably has a body (40a) defining top and bottom surfaces (41, 44) and at least one wafer-holding feature (43) configured to hold a wafer (50). The wafer carrier (40) desirably further has a recess (47) extending into the body from the bottom surface (44) and a keyway (48) projecting outwardly from a periphery (104) of the recess along a transverse axis (106). The shaft 36 preferably is engaged in the recess (47) and the.key (80) preferably is engaged into the keyway (48).
摘要翻译：用于化学气相沉积反应器的结构（10）理想地包括具有内部（26），安装在反应室中的心轴（30）的反应室（12）和可释放地安装在心轴上的晶片载体（40）与其旋转。主轴期望具有沿竖直旋转轴线（32）延伸的轴（36）和从轴向外突出的键（80）。晶片载体（40）优选地具有限定顶部和底部表面（41,44）的主体（40a）和被配置为保持晶片（50）的至少一个晶片保持特征（43）。晶片载体（40）理想地还具有从底表面（44）延伸到主体中的凹部（47）和沿着横向轴线（106）从凹部的周边（104）向外突出的键槽（48）。轴36优选地接合在凹部（47）中，并且键（80）优选地接合到键槽（48）中。

7. 发明申请

WO2018098075A1 THICKNESS UNIFORMITY CONTROL FOR EPITAXIALLY-GROWN STRUCTURES IN A CHEMICAL VAPOR DEPOSITION SYSTEM 审中-公开
公开(公告)号：WO2018098075A1
公开(公告)日：2018-05-31
申请号：PCT/US2017/062568
申请日：2017-11-20
申请人： VEECO INSTRUMENTS INC.
发明人： KRISHNAN, Sandeep , CHANSKY, Michael , KWON, Daewon , MARCELO, Earl
IPC分类号： H01L21/02 , H01L21/67 , C23C16/44
CPC分类号： C23C16/52 , C23C16/303 , C23C16/34 , C23C16/45502 , C23C16/45574 , C23C16/4584 , C30B35/00 , H01L21/0254 , H01L21/0262 , H01L21/6719 , H01L21/67253 , H01L21/68764 , H01L21/68771 , H01L22/12 , H01L22/26 , H01L29/2003 , H01L29/205
摘要： Systems and methods are described herein for improving the overall thickness control and the radial thickness profile of epitaxially-grown films or layers on wafers. Continuous, in situ measurement of thickness at a radially inner region and a radially outer region are used in embodiments to control corresponding precursor and/or dilution gas flow rates. Such measurements can be made using white light reflectometry through a viewport in the reactor housing.

8. 发明申请

WO2016209647A1 SELF-CENTERING WAFER CARRIER SYSTEM FOR CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：用于化学蒸气沉积的自中心波浪载体系统
公开(公告)号：WO2016209647A1
公开(公告)日：2016-12-29
申请号：PCT/US2016/037022
申请日：2016-06-10
申请人： VEECO INSTRUMENTS, INC.
发明人： KRISHNAN, Sandeep , GURARY, Alexander , CHANG, Chenghung Paul , MARCELO, Earl
IPC分类号： H01L21/205 , H01L21/68 , H01L21/677 , H01L21/02
CPC分类号： H01L21/68785 , C23C16/4584 , C23C16/4585 , H01L21/68735
摘要： A self-centering wafer carrier system for a chemical vapor deposition (CVD) reactor includes a wafer carrier comprising an edge. The wafer carrier at least partially supports a wafer for CVD processing. A rotating tube comprises an edge that supports the wafer carrier during processing. An edge geometry of the wafer carrier and an edge geometry of the rotating tube being chosen to provide a coincident alignment of a central axis of the wafer carrier and a rotation axis of the rotating tube during process at a desired process temperature.
摘要翻译：用于化学气相沉积（CVD）反应器的自定心晶片载体系统包括具有边缘的晶片载体。晶片载体至少部分地支撑用于CVD处理的晶片。旋转管包括在处理期间支撑晶片载体的边缘。晶片载体的边缘几何形状和旋转管的边缘几何形状被选择为在期望的工艺温度下处理期间提供晶片载体的中心轴线和旋转管的旋转轴线的重合对准。

9. 发明申请

WO2013033315A2 WAFER CARRIER WITH THERMAL FEATURES 审中-公开
标题翻译：具有热特性的散热器
公开(公告)号：WO2013033315A2
公开(公告)日：2013-03-07
申请号：PCT/US2012/053016
申请日：2012-08-30
申请人： VEECO INSTRUMENTS INC. , PARANJPE, Ajit , VOLF, Boris , ARMOUR, Eric, A. , KRISHNAN, Sandeep , WEI, Guanghua , URBAN, Lukas
发明人： PARANJPE, Ajit , VOLF, Boris , ARMOUR, Eric, A. , KRISHNAN, Sandeep , WEI, Guanghua , URBAN, Lukas
IPC分类号： H01L21/683 , H01L21/205 , C23C16/458
CPC分类号： H01L21/68764 , C23C16/4584 , C23C16/4586 , H01L21/67103 , H01L21/68707 , H01L21/68771
摘要： A wafer carrier (32) used in wafer treatments such as chemical vapor deposition has pockets (40) for holding the wafers (70) and support surfaces (56) for supporting the wafers above the floors (46) of the pockets. The carrier (32) is provided with thermal control features such as trenches (41) which form thermal barriers having lower thermal conductivity than surrounding portions of the carrier. These thermal control features promote a more uniform temperature distribution across the wafer surfaces (72, 74) and across the carrier top surface (34).
摘要翻译：在诸如化学气相沉积的晶片处理中使用的晶片载体（32）具有用于保持晶片（70）的凹槽（40）和用于将晶片支撑在凹穴的地板（46）上方的支撑表面（56）。载体（32）设置有诸如沟槽（41）的热控制特征，其形成具有比载体周围部分更低的热导率的热障。这些热控制特征促使晶片表面（72,74）和跨越载体顶表面（34）的更均匀的温度分布。

10. 发明申请

WO2012092127A8 METHODS AND SYSTEMS FOR IN-SITU PYROMETER CALIBRATION 审中-公开
公开(公告)号：WO2012092127A8
公开(公告)日：2012-07-05
申请号：PCT/US2011/066831
申请日：2011-12-22
申请人： VEECO INSTRUMENTS INC. , GURARY, Alexander, I. , BOGUSLAVSKIY, Vadim , KRISHNAN, Sandeep , KING, Matthew
发明人： GURARY, Alexander, I. , BOGUSLAVSKIY, Vadim , KRISHNAN, Sandeep , KING, Matthew
IPC分类号： G01J5/00
摘要： A method of in-situ pyrometer calibration for a wafer treatment reactor such as a CVD reactor 12 desirably includes the steps of positioning a calibrating pyrometer 80 at a first calibrating position A and heating the reactor until the reactor reaches a pyrometer calibration temperature. The method desirably further includes rotating a support element 40 about a rotational axis 42, and while the support element is rotating about the rotational axis, obtaining first operating temperature measurements from a first operating pyrometer 71 installed at a first operating position 1R, and obtaining first calibrating temperature measurements from the calibrating pyrometer 80. Both the calibrating pyrometer 80 and the first operating pyrometer 71 desirably are adapted to receive radiation from a first portion of the wafer support element 40 at a first radial distance D1 from the rotational axis 42 of the wafer support element.

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