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    • 2. 发明申请
    • ENHANCED WAFER CARRIER
    • 增强的晶片载体
    • WO2012021370A1
    • 2012-02-16
    • PCT/US2011/046567
    • 2011-08-04
    • VEECO INSTRUMENTS INC.VOLF, BorisRASHKOVSKY, Yuliy
    • VOLF, BorisRASHKOVSKY, Yuliy
    • H01L21/687
    • H01L21/68764C23C16/4586H01L21/68728H01L21/68771
    • A wafer carrier (32) used in wafer treatments such as chemical vapor deposition has pockets (40,240) for holding the wafers and support surfaces for supporting the wafers above the floors of the pockets. The carrier is provided with locks (50,250) for restraining wafers against upward movement away from the support surfaces (56, 254). Constraining the wafers against upward movement limits the effect of wafer distortion on the spacing between the wafer and the floor surfaces, and thus limits the effects of wafer distortion on heat transfer. The carrier may include a main portion (38) and minor portions (44) having higher thermal conductivity than the main portion, the minor portions being disposed below the pockets.
    • 用于诸如化学气相沉积之类的晶片处理中的晶片载体(32)具有用于保持晶片的支架(40,240)和用于将晶片支撑在袋的地板上方的支撑表面。 托架设有锁定装置(50,250),用于防止晶片向上移离支撑表面(56,254)。 限制晶片向上移动限制了晶片失真对晶片和地板表面之间的间隔的影响,并因此限制了晶片失真对传热的影响。 载体可以包括主要部分(38)和具有比主要部分更高热导率的次要部分(44),次要部分设置在袋的下方。
    • 4. 发明申请
    • WAFER CARRIER WITH SELECTIVE CONTROL OF EMISSIVITY
    • 具有选择性控制的波浪载体
    • WO2012092008A1
    • 2012-07-05
    • PCT/US2011/066034
    • 2011-12-20
    • VEECO INSTRUMENTS INC.VOLF, BorisWEI, GuanghuaRASHKOVSKY, Yuliy
    • VOLF, BorisWEI, GuanghuaRASHKOVSKY, Yuliy
    • H01L21/687
    • H01L21/68757H01L21/68771
    • A wafer carrier (28) for use in a chemical vapor deposition apparatus (10) includes at least one region on its outer surface having a substantially different (e.g., lower) emissivity than other regions on the outer surface. The modified emissivity region may be located on the outer edge (46), the top surface (29), and/or the bottom surface (31) of the carrier. The region may be associated with one or more wafer pockets (32) of the wafer carrier. The modified emissivity region may be shaped and sized so as to modify the heat transmission through the region, and thereby increase the temperature uniformity across portions of the top surface (29) of the wafer carrier or across individual wafers (34). The modified emissivity region may be provided by a coating on the outer surface of the wafer carrier.
    • 用于化学气相沉积装置(10)的晶片载体(28)包括在其外表面上的至少一个区域,其具有与外表面上的其它区域基本不同的(例如,较低的)发射率。 修改的发射率区域可以位于载体的外边缘(46),顶表面(29)和/或底表面(31)上。 该区域可以与晶片载体的一个或多个晶片槽(32)相关联。 修改的辐射率区域可以被成形和定尺寸,以便改变通过该区域的热传递,从而增加跨越晶片载体的顶表面(29)的部分或跨越单个晶片(34)的温度均匀性。 修改的发射率区域可以由晶片载体的外表面上的涂层提供。