专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2018098075A1 THICKNESS UNIFORMITY CONTROL FOR EPITAXIALLY-GROWN STRUCTURES IN A CHEMICAL VAPOR DEPOSITION SYSTEM 审中-公开
公开(公告)号：WO2018098075A1
公开(公告)日：2018-05-31
申请号：PCT/US2017/062568
申请日：2017-11-20
申请人： VEECO INSTRUMENTS INC.
发明人： KRISHNAN, Sandeep , CHANSKY, Michael , KWON, Daewon , MARCELO, Earl
IPC分类号： H01L21/02 , H01L21/67 , C23C16/44
CPC分类号： C23C16/52 , C23C16/303 , C23C16/34 , C23C16/45502 , C23C16/45574 , C23C16/4584 , C30B35/00 , H01L21/0254 , H01L21/0262 , H01L21/6719 , H01L21/67253 , H01L21/68764 , H01L21/68771 , H01L22/12 , H01L22/26 , H01L29/2003 , H01L29/205
摘要： Systems and methods are described herein for improving the overall thickness control and the radial thickness profile of epitaxially-grown films or layers on wafers. Continuous, in situ measurement of thickness at a radially inner region and a radially outer region are used in embodiments to control corresponding precursor and/or dilution gas flow rates. Such measurements can be made using white light reflectometry through a viewport in the reactor housing.

2. 发明申请

WO2013192510A1 REDUCTION OF RADIATION THERMOMETRY BIAS ERRORS IN A CVD REACTOR 审中-公开
标题翻译：减少CVD反应器中的放射性热失真偏差
公开(公告)号：WO2013192510A1
公开(公告)日：2013-12-27
申请号：PCT/US2013/047024
申请日：2013-06-21
申请人： VEECO INSTRUMENTS, INC.
发明人： TAS, Guray , ZHOU, Jing , KWON, Daewon
IPC分类号： C23C16/44 , C23C16/50
CPC分类号： C23C16/481 , C23C16/52
摘要： Apparatuses for reducing radiation thermometry bias errors in enclosures such as CVD reactors. In one embodiment, a radiation thermometer utilizes an off-focus telecentric lens arrangement. The off-focus telecentric arrangement is focused at infinity, but is utilized to capture radiation from a relatively proximate target (e.g., within a couple meters) that is out of focus. The capture of collimated radiation from the target diminishes the contribution of stray radiation. In another embodiment, scattered radiation originating from a designated segment of a peripheral heating element can be reduced locally by one of several mechanisms, including reducing the emission (e.g., operating temperature) of the designated segment, or capturing or deflecting a portion of the radiation originating from the designated segment. Radiation thermometers fixed proximate an axis that extends from the center of the wafer carrier and across the designated segment are subject to less stray radiation, thus providing a more reliable temperature reading.
摘要翻译：用于减少诸如CVD反应器的外壳中辐射测温偏差误差的装置。在一个实施例中，辐射温度计利用离焦远心透镜装置。离焦远心布置集中在无穷远处，但被用于从不相关的目标（例如，在几米内）捕获辐射。来自目标的准直辐射的捕获减少了杂散辐射的贡献。在另一个实施例中，源自外围加热元件的指定片段的散射辐射可以通过几种机制之一来局部地减少，包括减少指定片段的发射（例如，工作温度），或者捕获或偏转辐射的一部分源自指定的细分。靠近从晶片载体的中心延伸并穿过指定的区段的轴固定的辐射温度计经受更少的杂散辐射，从而提供更可靠的温度读数。

3. 发明申请

WO2017019472A1 METHOD AND APPARATUS FOR CONTROLLED DOPANT INCORPORATION AND ACTIVATION IN A CHEMICAL VAPOR DEPOSITION SYSTEM 审中-公开
标题翻译：化学气相沉积系统中控制剂掺入和活化的方法与装置
公开(公告)号：WO2017019472A1
公开(公告)日：2017-02-02
申请号：PCT/US2016/043462
申请日：2016-07-22
申请人： VEECO INSTRUMENTS INC.
发明人： ARMOUR, Eric, A. , PAPASOULIOTIS, George , KWON, Daewon
IPC分类号： H01L21/02 , H01L21/205 , H01L21/687
CPC分类号： H01L21/3245 , C23C16/047 , C23C16/301 , C23C16/4584 , C23C16/482 , C23C16/52 , H01L21/0254 , H01L21/0262 , H01L29/20 , H01L29/2003 , H01L29/205 , H01L29/66431 , H01L29/7787 , H01L33/0075 , H01L33/32
摘要： Embodiments include systems and methods for producing semiconductor wafers having reduced quantities of point defects. These systems and methods include a tunable ultraviolet (UV) light source, which is controlled to produce a raster of a UV light beam across a surface of a semiconductor wafer during epitaxial growth to dissociate point defects in the semiconductor wafer. In various embodiments, the tunable UV light source is configured external to a Metal Organic Chemical Vapor Deposition (MOCVD) chamber and controlled such that the UV light beam is directed though a window defined in a wall of the MOCVD chamber.
摘要翻译：实施例包括用于制造具有减少量的点缺陷的半导体晶片的系统和方法。这些系统和方法包括可调紫外（UV）光源，其被控制以在外延生长期间跨越半导体晶片的表面产生UV光束的光栅，以解离半导体晶片中的点缺陷。在各种实施例中，可调谐UV光源被配置在金属有机化学气相沉积（MOCVD）室的外部，并被控制使得UV光束被引导通过限定在MOCVD室的壁中的窗口。

4. 发明申请

WO2016196096A1 WAFER SURFACE 3-D TOPOGRAPHY MAPPING BASED ON IN-SITU TILT MEASUREMENTS IN CHEMICAL VAPOR DEPOSITION SYSTEMS 审中-公开
标题翻译：基于化学蒸气沉积系统中的原位倾斜测量的WAFER SURFACE 3-D地形图
公开(公告)号：WO2016196096A1
公开(公告)日：2016-12-08
申请号：PCT/US2016/033995
申请日：2016-05-25
申请人： VEECO INSTRUMENTS, INC.
发明人： KWON, Daewon
IPC分类号： H01L21/66 , H01L21/02 , H01L21/205 , H01L21/67 , H01L21/324
CPC分类号： H01L21/67288 , C23C16/303 , C23C16/4584 , C23C16/46 , C23C16/52 , G01B11/002 , G01B11/0608 , H01L21/67259
摘要： The surface topography of at least one wafer can be determined in-situ based on deflectometer measurements of surface tilt. The deflectometer is re-positioned by a scanning positioner to facilitate tilt mapping of the wafer surface for each of the at least one wafer. A surface height mapping engine is configured to generate a three-dimensional topographic mapping of the surface of each of the at least one wafer based on the mapping of the tilt.
摘要翻译：至少一个晶片的表面形貌可以基于表面倾斜的偏转计测量原位来确定。偏转仪由扫描定位器重新定位，以便于对于至少一个晶片中的每个晶片的晶片表面的倾斜映射。表面高度映射引擎被配置为基于倾斜的映射来生成至少一个晶片中的每一个的表面的三维地形映射。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式