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1. 发明申请

WO2010062644A3 VERTICAL GROUP III-V NANOWIRES ON SI, HETEROSTRUCTURES, FLEXIBLE ARRAYS AND FABRICATION 审中-公开
标题翻译：立式组III-V纳米管，复合结构，柔性阵列和制造
公开(公告)号：WO2010062644A3
公开(公告)日：2010-07-22
申请号：PCT/US2009062356
申请日：2009-10-28
申请人： UNIV CALIFORNIA , WANG DELI , SOCI CESARE , BAO XINYU , WEI WEI , JING YI , SUN KE
发明人： WANG DELI , SOCI CESARE , BAO XINYU , WEI WEI , JING YI , SUN KE
IPC分类号： H01L21/20 , B82B3/00
CPC分类号： H01L21/0262 , B82Y10/00 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02573 , H01L21/02603 , H01L21/02636 , H01L27/0605 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/20 , H01L29/205 , H01L29/267 , H01L29/7784 , H01L29/88 , H01L31/035281 , H01L31/03529 , H01L31/074 , H01L33/08 , H01L33/20 , H01L33/32 , Y02E10/50 , Y10S438/938 , Y10S438/967 , Y10S438/974 , Y10S977/762 , Y10S977/763 , Y10S977/764 , Y10S977/765 , Y10S977/813 , Y10S977/815 , Y10S977/819 , Y10S977/825
摘要： Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.
摘要翻译：本发明的实施例提供了一种在硅衬底上直接异质外延生长垂直III-V半导体纳米线的方法。蚀刻硅衬底以基本上完全去除天然氧化物。将其迅速置于反应室中。将基底加热并保持在生长温度。 III-V族前体流过生长时间。优选的实施例中，硅上的垂直III-V族III族纳米线具有核 - 壳结构，其提供径向同态结或异质结。掺杂的纳米线芯由具有互补掺杂的壳包围。这样可以由于在垂直的纳米线的轴向方向上的长的光路而提供高的光学吸收，同时在径向方向收集载体之前要大大减小载体必须扩散的距离。合金成分也可以变化。可以实现径向和轴向同态和异质结。实施例提供柔性III-V族纳米线结构。 III-V族纳米线结构阵列嵌入聚合物中。制造方法在衬底（例如，硅衬底）上形成垂直的纳米线。优选地，通过在硅上制造III-V族III族纳米线的优选方法形成纳米线。器件可以用核/壳和核/多壳纳米线形成，并且器件从其上形成纳米线的衬底释放以产生包括嵌入聚合物中的垂直纳米线阵列的柔性结构。

2. 发明申请

WO2008143727A2 NANOWIRE PHOTODETECTOR AND IMAGE SENSOR WITH INTERNAL GAIN 审中-公开
标题翻译： NANOWIRE光电和图像传感器内部增益
公开(公告)号：WO2008143727A2
公开(公告)日：2008-11-27
申请号：PCT/US2008002529
申请日：2008-02-26
申请人： UNIV CALIFORNIA , WANG DELI , SOCI CESARE , LO YU-HWA , ZHANG ARTHUR , APLIN DAVID , WANG LINGQUAN , DAYEH SHADI , BAO XIN YU
发明人： WANG DELI , SOCI CESARE , LO YU-HWA , ZHANG ARTHUR , APLIN DAVID , WANG LINGQUAN , DAYEH SHADI , BAO XIN YU
IPC分类号： H01L27/146
CPC分类号： H01L31/035227 , B82Y20/00 , H01L27/14643 , H01L31/035236
摘要： A practical ID nanowire photodetector with high gain that can be controlled by a radial electric field established in the ID nanowire. A ID nanowire photodetector device of the invention includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to the nanowire inhibits photo-carrier recombination, thus enhancing the photocurrent response. The invention further provides circuits of ID nanowire photodetctors, with groups of photodetctors addressed by their individual ID nanowires electrode contacts. The invention also provides a method for placement of ID nanostructures, including nanowires, with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of ID nanostructures. The ID nanostructures are aligned in a liquid suspension, and then transferred into the trenches from the liquid suspension. Removal of the patterning material places the ID nanostructures in predetermined, registered positions on the substrate.
摘要翻译：具有高增益的实用的ID纳米线光电探测器，其可以通过在ID纳米线中建立的径向电场来控制。本发明的ID纳米线光电探测器器件包括一个纳米线，该纳米线被电极单独接触，用于施加驱动光电流的纵向电场。对纳米线的固有径向电场抑制光载流子复合，从而增强光电流响应。本发明还提供了ID纳米线光电子器件的电路，其具有由它们的各自的ID纳米线电极接触器寻址的光电子束组。本发明还提供了一种用于将ID纳米结构（包括纳米线）放置在衬底上的方法。用诸如光致抗蚀剂的材料对衬底进行图案化，并且在图案化材料中在预定位置形成沟槽以放置ID纳米结构。将ID纳米结构在液体悬浮液中排列，然后从液体悬浮液转移到沟槽中。去除图案形成材料将ID纳米结构放置在基板上的预定的注册位置。

3. 发明申请

WO2008140611A3 NANOWIRE ARRAY-BASED LIGHT EMITTING DIODES AND LASERS 审中-公开
标题翻译：基于阵列的发光二极管和激光器
公开(公告)号：WO2008140611A3
公开(公告)日：2009-04-30
申请号：PCT/US2007088001
申请日：2007-12-18
申请人： UNIV CALIFORNIA , WANG DELI , BAO XINYU , XIANG BIN
发明人： WANG DELI , BAO XINYU , XIANG BIN
IPC分类号： H01L33/18 , H01L33/24
CPC分类号： H01L33/18 , B82Y20/00 , B82Y30/00 , H01L33/24 , H01S5/1042 , H01S5/183 , H01S5/423
摘要： Semiconductor nanowire arrays are used to replace the conventional planar layered construction for fabrication of LEDs and laser diodes. The nanowire arrays are formed from III-V or II-VI compound semiconductors on a conducting substrate. For fabrication of the device, an electrode layer is deposited on the substrate, a core material of one of a p-type and n-type compound semiconductor material is formed on top of the electrode as a planar base with a plurality of nanowires extending substantially vertically therefrom. A shell material of the other of the p-type and n-type compound semiconductor material is formed over an outer surface of the core material so that a p-n junction is formed across the planar base and over each of the plurality of nanowires. An electrode coating is formed an outer surface of the shell material for providing electrical contact to a current source. Heterostructures and superlattices grown along the lengths of the nanowires allow the confinement of photons in the quantum well to enhance the efficiency and as well as color tuning.
摘要翻译：半导体纳米线阵列用于替代用于制造LED和激光二极管的常规平面分层结构。纳米线阵列由导电衬底上的III-V或II-VI化合物半导体形成。为了制造器件，在衬底上沉积电极层，在电极顶部形成p型和n型化合物半导体材料之一的芯材作为平面基底，其中多个纳米线基本上延伸垂直地。 p型和n型化合物半导体材料中的另一种的外壳材料形成在芯材的外表面上，从而跨平面基底和多个纳米线中的每一个形成p-n结。电极涂层形成外壳材料的外表面，用于提供与电流源的电接触。沿着纳米线的长度生长的异质结构和超晶格允许光子在量子阱中的约束以提高效率以及颜色调整。

4. 发明申请

WO2012149225A3 SYSTEMS AND DEVICES FOR RECORDING AND REPRODUCING SENSES 审中-公开
标题翻译：用于记录和复制感测的系统和设备
公开(公告)号：WO2012149225A3
公开(公告)日：2013-03-28
申请号：PCT/US2012035305
申请日：2012-04-26
申请人： UNIV CALIFORNIA , NGUYEN TRUONG , WANG DELI , KIM YOUNG OUK , HA WON
发明人： NGUYEN TRUONG , WANG DELI , KIM YOUNG OUK , HA WON
IPC分类号： G06F3/00 , G06F3/041 , G06F3/14 , G06F3/16
CPC分类号： G06F3/0416 , G06F3/00 , G06F3/011 , G06F3/014 , G06F3/016 , G06F3/041 , G06F3/16 , G06F2203/0381
摘要： Systems and devices for recording and reproducing senses. One or more of touch sensations and smell sensations are received to produce at least one of touch input signals and smell input signals. The input signals are stored and processed, and at least one output signal can be produced. One or more of a touch output and a smell output can be generated. The touch input, the smell input, or both can be integrated with one or more of sight input and sound input.
摘要翻译：用于记录和再现感官的系统和设备。接收触摸感和嗅觉感觉中的一种或多种以产生触摸输入信号和气味输入信号中的至少一种。输入信号被存储和处理，并且可以产生至少一个输出信号。可以产生触摸输出和气味输出中的一个或多个。触摸输入，气味输入或两者可以与一个或多个视觉输入和声音输入集成。

5. 发明申请

WO2011163262A3 ULTRA-HIGH PHOTOSENSITIVITY VERTICAL NANOWIRE ARRAYS FOR RETINAL PROSTHESIS 审中-公开
标题翻译：超高光敏性垂直纳米阵列
公开(公告)号：WO2011163262A3
公开(公告)日：2012-05-03
申请号：PCT/US2011041293
申请日：2011-06-21
申请人： UNIV CALIFORNIA , KHRAICHE MASSOUD L , SILVA GABRIEL A , CAUWENBERGHS GERT , LO YU-HWA , WANG DELI , FREEMAN WILLIAM
发明人： KHRAICHE MASSOUD L , SILVA GABRIEL A , CAUWENBERGHS GERT , LO YU-HWA , WANG DELI , FREEMAN WILLIAM
IPC分类号： A61F2/14 , A61F9/00 , A61L27/14 , A61N1/02
CPC分类号： A61N1/36046 , A61F2/14 , A61L27/18 , A61L2400/12 , A61L2430/16 , A61N1/0543 , H01L31/035227 , H01L31/035236 , C08L83/04 , C08L65/04
摘要： A prosthetic retina for implantation in an eye having a defective retina is formed from an array of nanowires having a predetermined spatial distribution, density, size and shape implanted in close proximity to the retina. An electrical conductor is formed at a first end of all nanowires in the array of nanowires and placed in contact with a bias source which biases the array. A plurality of electrodes is located on a second end of each of one nanowire or a bundle of nanowires in the array. Each nanowire produces a photocurrent at a corresponding electrode in response to detection of light impinging on the array of nanowires and the photocurrent stimulates one or more neurons adapted for visual perception. In the preferred embodiment, the predetermined spatial distribution mimics a distribution of rods and cones in a normal eye.
摘要翻译：用于植入具有缺陷视网膜的眼睛中的假视网膜由具有植入在视网膜附近的预定空间分布，密度，大小和形状的纳米线阵列形成。电导体形成在纳米线阵列中的所有纳米线的第一端，并与偏置源接触，偏置源偏置阵列。多个电极位于阵列中的一个纳米线或纳米线束中的每一个的第二端上。每个纳米线响应于入射到纳米线阵列上的光而在对应的电极处产生光电流，并且光电流刺激一个或多个适于视觉感知的神经元。在优选实施例中，预定空间分布模拟正常眼睛中的棒和锥体的分布。

6. 发明申请

WO2010065860A2 ELECTRON INJECTION NANOSTRUCTURED SEMICONDUCTOR MATERIAL ANODE ELECTROLUMINESCENCE METHOD AND DEVICE 审中-公开
标题翻译：电子注入纳米结构半导体材料阳极电致发光方法和器件
公开(公告)号：WO2010065860A2
公开(公告)日：2010-06-10
申请号：PCT/US2009066782
申请日：2009-12-04
申请人： UNIVERITY OF CALIFORNIA , WANG DELI
发明人： WANG DELI
IPC分类号： H05B33/00
CPC分类号： H01J63/06 , H01L33/502
摘要： Embodiments of the invention include methods and devices for producing light by injecting electrons from field emission cathode across a gap into nanostructured semiconductor materials, electrons issue from a separate field emitter cathode and are accelerated by a voltage across a gap towards the surface of the nanostructured material that forms part of the anode. At the nanostructure material, the electrons undergo electron-hole (e-h) recombination resulting in electroluminescent (EL) emission. In a preferred embodiment lighting device, a vacuum enclosure houses a field emitter cathode. The vacuum enclosure also houses an anode that is separated by a gap from said cathode and disposed to receive electrons emitted from the cathode. The anode includes semiconductor light emitting nano structures that accept injection of electrons from the cathode and generate photons in response to the injection of electrons. External electrode contacts permit application of a voltage differential across the anode and cathode to stimulate electron emissions from the cathode and resultant photon emissions from the semiconductor light emitting nanostructures of the anode. Embodiments of the invention also include the usage of nanostructured semiconductor materials as phosphors for conventional planar LED and nanowire array light emitting diodes and CFL. For the use in conventional planar LEDs, the nanostructures may take the form of quantum dots, nanotubes, branched tree-like nanostructure, nanoflower, tetrapods, tripods, axial heterostructures nanowires hetero structures.
摘要翻译：本发明的实施例包括通过从场发射阴极将电子从间隙注入到纳米结构化半导体材料中来产生光的方法和装置，电子从单独的场发射极阴极发出并且通过跨越纳米结构材料表面的间隙的电压加速形成阳极的一部分。在纳米结构材料上，电子经历电子 - 空穴（e-h）复合，产生电致发光（EL）发射。在优选实施例的照明装置中，真空外壳容纳场致发射极阴极。真空外壳还容纳阳极，该阴极与所述阴极间隔开并被设置成接收从阴极发射的电子。阳极包括接受从阴极注入电子并响应于电子注入而产生光子的半导体发光纳米结构。外部电极触点允许在阳极和阴极之间施加电压差以刺激来自阴极的电子发射以及来自阳极的半导体发光纳米结构的光子发射。本发明的实施例还包括纳米结构半导体材料作为用于常规平面LED和纳米线阵列发光二极管和CFL的磷光体的用途。对于在常规平面LED中的使用，纳米结构可以采取量子点，纳米管，支化树状纳米结构，纳米花，四脚架，三脚架，轴向异质结构纳米线异质结构的形式。

7. 发明申请

WO2015061505A2 IDENTITY AUTHORIZATION AND AUTHENTICATION 审中-公开
标题翻译：身份认证和认证
公开(公告)号：WO2015061505A2
公开(公告)日：2015-04-30
申请号：PCT/US2014061846
申请日：2014-10-22
申请人： UNIV CALIFORNIA , NEEM SCIENT INC
发明人： WANG DELI , VISHNIAKOU SIARHEI , HOU HONGTAO
IPC分类号： G06F21/31
CPC分类号： G06F21/32 , G01L5/0038 , G06F21/31 , G06F21/62
摘要： A method of authorizing and/or authenticating a user includes: obtaining a first pressure profile of the user, the first pressure profile including at least a temporal pressure profile component; comparing at least one feature of the first pressure profile to at least one feature of a previously obtained pressure profile of the user, the previously obtained pressure profile including at least a temporal pressure profile component; and authorizing and/or authenticating the user if the at least one feature of the first pressure profile and the at least one feature of the previously obtained pressure profile match within a predefined threshold.
摘要翻译：一种授权和/或认证用户的方法包括：获得用户的第一压力分布，所述第一压力分布包括至少一个时间压力分布分量; 将所述第一压力分布的至少一个特征与先前获得的所述用户的压力分布的至少一个特征进行比较，所述先前获得的压力分布包括至少一个时间压力分布分量; 以及如果第一压力分布的至少一个特征和先前获得的压力分布的至少一个特征匹配在预定阈值内，则授权和/或认证用户。

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