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1. 发明申请

WO2019074557A1 SIDE-GATING IN SELECTIVE-AREA-GROWN TOPOLOGICAL QUBITS 审中-公开
公开(公告)号：WO2019074557A1
公开(公告)日：2019-04-18
申请号：PCT/US2018/039833
申请日：2018-06-27
申请人： MICROSOFT TECHNOLOGY LICENSING LLC
发明人： PIKULIN, Dmitry , FREEDMAN, Michael H. , LUTCHYN, Roman , KROGSTRUP JEPPESEN, Peter , BONDERSON, Para
IPC分类号： G06N99/00 , H01L21/02 , H01L21/28 , H01L21/30 , H01L27/18 , H01L29/06
CPC分类号： H01L39/24 , B82Y10/00 , B82Y40/00 , G06N10/00 , H01L21/02392 , H01L21/02546 , H01L21/02603 , H01L21/02639 , H01L21/28132 , H01L27/18 , H01L29/0673 , H01L29/20 , H01L29/66977 , H01L39/228
摘要： A method for fabricating a quantum device, the method comprising: providing a substrate and an insulator formed on the substrate; from combinations of selective-area-grown semiconductor material along with regions of a superconducting material, forming a network of nanowires oriented in a plane of the substrate which can be used to produce a Majorana-based topological qubit; and fabricating a side gate for controlling a topological segment of the qubit; wherein the selective-area-grown semiconductor material is grown on the substrate, by etching trenches in the insulator formed on the substrate to define the nanowires and depositing the semiconductor material in the trenches defining the nanowires; and wherein the fabricating of the side gate comprises etching the dielectric to create a trench for the side gate and depositing the side gate in the trench for the side gate.

2. 发明申请

WO2018175081A1 RED LIGHT EMITTING DIODES HAVING AN INDIUM GALLIUM NITRIDE TEMPLATE LAYER AND METHOD OF MAKING THEREOF 审中-公开
公开(公告)号：WO2018175081A1
公开(公告)日：2018-09-27
申请号：PCT/US2018/020375
申请日：2018-03-01
申请人： CIECHONSKI, Rafal , DANESH, Fariba , GARDNER, Nathan , LEUNG, Benjamin , TSAI, Miao-Chan
发明人： CIECHONSKI, Rafal , DANESH, Fariba , GARDNER, Nathan , LEUNG, Benjamin , TSAI, Miao-Chan
IPC分类号： H01L33/00 , H01L33/16 , H01L33/20
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L21/02603 , H01L21/02642 , H01L21/02647 , H01L33/007 , H01L33/08 , H01L33/24
摘要： A growth mask layer including an array of apertures therethrough can be formed on a single crystalline gallium nitride layer. Group III nitride nanostructures including gallium nitride or indium gallium nitride nanopyramids or nanowires can be formed through the array of apertures by a selective epitaxy process. An indium gallium nitride material can be deposited by another selective epitaxy process on the Group III nitride nanostructures until a continuous indium gallium nitride template layer is formed. The continuous indium gallium nitride template layer has a dislocation density that decreases with distance from the growth mask layer. Red light emitting diodes can be formed over the continuous indium gallium nitride template layer with higher efficiency due the relatively large lattice constant of the continuous indium gallium nitride template layer.

3. 发明申请

WO2017021380A1 PROCESS FOR GROWING NANOWIRES OR NANOPYRAMIDS ON GRAPHITIC SUBSTRATES 审中-公开
标题翻译：用于生长纳米颗粒或纳米晶体的方法
公开(公告)号：WO2017021380A1
公开(公告)日：2017-02-09
申请号：PCT/EP2016/068350
申请日：2016-08-01
申请人： CRAYONANO AS , NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)
发明人： KIM, Dong-Chul , HØIAAS, Ida Marie , MUNSHI, Mazid , FIMLAND, Bjørn Ove , WEMAN, Helge , REN, Dingding , DHEERAJ, Dasa
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , H01L21/02376 , H01L21/02458 , H01L21/02538 , H01L21/0254 , H01L21/02603 , H01L21/02631 , H01L21/02639
摘要： A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably Ill-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.
摘要翻译：一种用于生长纳米线或纳米粒子的方法，包括：（I）提供石墨基底并在升高的温度下在所述石墨基底上沉积AlGaN，InGaN，AlN或AlGa（In）N以形成所述化合物的缓冲层或纳米级成核岛; （II）优选通过MOVPE或MBE在所述缓冲层或石墨基底上的成核岛上生长多个半导体III-V族纳米线或纳米锥体，优选为III族氮化物纳米线或纳米锥。

4. 发明申请

WO2016109516A1 METHODS FOR THE CONTINUOUS, LARGE-SCALE MANUFACTURE OF FUNCTIONAL NANOSTRUCTURES 审中-公开
标题翻译：连续的大规模制造功能性纳米结构的方法
公开(公告)号：WO2016109516A1
公开(公告)日：2016-07-07
申请号：PCT/US2015/067832
申请日：2015-12-29
申请人： GEORGIA TECH RESEARCH CORPORATION
发明人： FILLER, Michael, A. , BEHRENS, Sven, Holger , BREEDVELD, Laurens, Victor
IPC分类号： H01L21/02
CPC分类号： H01L21/02653 , C23C16/045 , C23C16/4417 , C23C16/442 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02645
摘要： A method for forming nanostructures including introducing a hollow shell into a reactor. The hollow shell has catalyst nanoparticles exposed on its interior surface. The method also includes introducing a precursor into the reactor to grow nanostructures from the interior surface of the hollow shell from the catalyst nanoparticles.
摘要翻译：一种形成纳米结构的方法，包括将中空壳引入反应器。中空壳体具有在其内表面上暴露的催化剂纳米颗粒。该方法还包括将前体引入反应器以从催化剂纳米颗粒从中空壳的内表面生长纳米结构。

5. 发明申请

WO2016035925A1 반도체 장치의 제조방법 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：WO2016035925A1
公开(公告)日：2016-03-10
申请号：PCT/KR2014/010153
申请日：2014-10-28
申请人： 한국과학기술원
发明人： 김정우 , 이완규 , 전호승
IPC分类号： H01L21/336
CPC分类号： H01L21/02639 , B82Y10/00 , H01L21/02603 , H01L29/0673 , H01L29/42376 , H01L29/4238 , H01L29/42392 , H01L29/66439 , H01L29/66742 , H01L29/78696
摘要： 본 발명은 수평 방향의 단결정 나노선을 형성하는 공정의 기술 난이도 및 제조비용을 낮추기 위한 반도체 장치의 제조방법을 위하여, 제 1 영역 및 제 2 영역을 포함하는 기판을 준비하는 단계, 상기 제 1 영역의 기판 위에 나노선이 형성될 위치를 정하고 나노선이 채워질 빈 공간을 마련하는 단계, 상기 제 1 영역에 인접한 부위의 기판 표면을 노출시키는 단계, 노출된 기판 표면으로부터 선택적 단결정 성장이 일어나는 단계, 식각공정을 통해 상기 제 1 영역 내에서는 자가정렬(Self-aligned)방식으로 나노선을 형성하고 제 1 영역 밖에서는 제 2 영역의 배선에 필요한 부위를 제외한 나머지 영역의 단결정 성장층을 제거하는 단계를 포함하는, 반도체 장치의 제조방법을 제공한다.
摘要翻译：本发明提供一种用于降低形成水平单晶纳米线的工艺的技术难点和制造成本的半导体器件制造方法，所述半导体器件制造方法包括以下步骤：制备包括第一区域和第二区域的衬底; 确定在所述第一区域的所述基板上形成纳米线的位置，并且设置要填充所述纳米线的空白空间; 暴露与第一区域相邻的部分的基板表面; 从暴露的基底表面引起选择性单晶生长; 以及通过在第一区域内的蚀刻工艺通过自对准方法形成纳米线，并且从第一区域的外部除去除了第二区域的布线所需的部分之外的剩余区域的单晶生长层。

6. 发明申请

WO2015199655A1 TECHNIQUES FOR FORMING GE/SIGE-CHANNEL AND III-V-CHANNEL TRANSISTORS ON THE SAME DIE 审中-公开
标题翻译：在相同的模具上形成通道/信号通道和III-V通道晶体管的技术
公开(公告)号：WO2015199655A1
公开(公告)日：2015-12-30
申请号：PCT/US2014/043821
申请日：2014-06-24
申请人： INTEL CORPORATION , GLASS, Glenn A. , MURTHY, Anand S. , JAMBUNATHAN, Karthik
发明人： GLASS, Glenn A. , MURTHY, Anand S. , JAMBUNATHAN, Karthik
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/823807 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02603 , H01L21/823821 , H01L21/8258 , H01L21/845 , H01L27/0922 , H01L27/0924 , H01L27/1211 , H01L29/0673 , H01L29/1054 , H01L29/165 , H01L29/205 , H01L29/42392 , H01L29/66545 , H01L29/78681 , H01L29/78684 , H01L29/78696
摘要： Techniques are disclosed for forming Ge/SiGe-channel and III-V-channel transistors on the same die. The techniques include depositing a pseudo-substrate of Ge/SiGe or III-V material on a Si or insulator substrate. The pseudo-substrate can then be patterned into fins and a subset of the fins can be replaced by the other of Ge/SiGe or III-V material. The Ge/SiGe fins can be used for p-MOS transistors and the III-V material fins can be used for n-MOS transistors, and both sets of fins can be used for CMOS devices, for example. In some instances, only the channel region of the subset of fins are replaced during, for example, a replacement gate process. In some instances, some or all of the fins may be formed into or replaced by one or more nanowires or nanoribbons.
摘要翻译：公开了在同一芯片上形成Ge / SiGe沟道和III-V沟道晶体管的技术。这些技术包括在Si或绝缘体衬底上沉积Ge / SiGe或III-V材料的伪衬底。然后将伪衬底图案化成翅片，并且翅片的子集可以被Ge / SiGe或III-V材料中的另一个代替。 Ge / SiGe散热片可用于p-MOS晶体管，III-V材料散热片可用于n-MOS晶体管，例如两组散热片可用于CMOS器件。在一些情况下，在例如替换闸门处理期间仅替换翅片子集的通道区域。在一些情况下，一些或全部翅片可以被一个或多个纳米线或纳米带形成或替代。

7. 发明申请

WO2015191728A1 FOOD AND BEVERAGE COMPOSITIONS INFUSED WITH LIPOPHILIC ACTIVE AGENTS AND METHODS OF USE THEREOF 审中-公开
标题翻译：食用和饮用组合物与活性药剂一起使用及其使用方法
公开(公告)号：WO2015191728A1
公开(公告)日：2015-12-17
申请号：PCT/US2015/035128
申请日：2015-06-10
申请人： POVIVA TEA, LLC
发明人： WASHINGTON, Marian, E. , REILLO, Michelle
IPC分类号： A61K35/06 , A61K35/60 , A23L1/302
CPC分类号： A61K9/0095 , A23C9/156 , A23C9/16 , A23F3/405 , A23L2/52 , A23L3/44 , A23L27/84 , A23L29/035 , A23L29/25 , A23L33/105 , A23L33/115 , A23L33/15 , A23V2002/00 , A61K9/0056 , A61K9/148 , A61K31/05 , A61K31/167 , A61K31/192 , A61K31/196 , A61K31/352 , A61K31/355 , A61K31/405 , A61K31/455 , A61K31/465 , A61K31/5415 , A61K31/616 , A61K31/621 , A61K36/185 , A61K36/82 , A61K47/44 , A61K47/46 , B82Y10/00 , H01L21/02381 , H01L21/02461 , H01L21/02532 , H01L21/02603 , H01L21/823807 , H01L27/092 , H01L29/0673 , H01L29/42376 , H01L29/42392 , H01L29/66439 , H01L29/66545 , H01L29/66795 , H01L29/775 , H01L29/785 , A61K2300/00
摘要： Aspects described herein relate to food and beverage compositions infused with lipophilic active agents and methods of use for the treatment of a variety of disorders. More particularly, aspects described herein relate to food and beverage compositions infused with lipophilic active agents such as cannabinoids, nicotine, nonsteroidal anti-inflammatories (NSAIDs), and vitamins, that provide enhanced bioavailability of the lipophilic active agents in a subject, and that mask unpleasant tastes of lipophilic active agents.
摘要翻译：本文所述方面涉及用亲脂性活性剂注入的食物和饮料组合物以及用于治疗多种疾病的方法。更具体地，本文所述的方面涉及输入亲脂性活性剂（例如大麻素，尼古丁，非甾体抗炎药（NSAID））和维生素的食物和饮料组合物，其提供对象中亲脂性活性剂的增强的生物利用度，并且该掩模令人不快的口味的亲脂性活性剂。

8. 发明申请

WO2015120513A1 ELECTROSTATIC CONTROL OF METAL WETTING LAYERS DURING DEPOSITION 审中-公开
标题翻译：沉积期间金属湿润层的静电控制
公开(公告)号：WO2015120513A1
公开(公告)日：2015-08-20
申请号：PCT/AU2015/050026
申请日：2015-01-28
申请人： BUTCHER, Kenneth Scott Alexander
发明人： BUTCHER, Kenneth Scott Alexander
IPC分类号： B82B1/00 , C23C16/00 , C23C4/06
CPC分类号： C23C16/50 , C23C16/06 , C23C16/303 , C23C16/4401 , C23C16/45523 , C23C16/45525 , C23C16/515 , C30B25/16 , C30B29/406 , C30B30/02 , H01L21/0254 , H01L21/02603 , H01L21/02653
摘要： There is disclosed a system for the electrostatic control of a metal wetting layer during deposition and a method of electrostatically controlling a metal wetting layer during deposition using a deposition system. In one example, control of the metal wetting layer is provided by changing or applying an electrostatic field acting on a deposited material or acting on a substrate on which a material is deposited. In another example, control is of the thickness of the metal wetting layer. In another example, control is of the presence or absence of the metal wetting layer. The metal wetting layer can be a liquid metal or liquid metal alloy, for example the metal wetting layer could be Boron, Aluminium, Indium, Gallium or Thallium. In another example, control is of the thickness, or presence, of a Gallium wetting layer during GaN film growth.
摘要翻译：公开了一种用于在沉积期间静电控制金属润湿层的系统以及使用沉积系统在沉积期间静电控制金属润湿层的方法。在一个实例中，通过改变或施加作用在沉积材料上或作用在其上沉积材料的基底上的静电场来提供金属润湿层的控制。在另一个实例中，控制是金属润湿层的厚度。在另一个实例中，控制是存在或不存在金属润湿层。金属润湿层可以是液态金属或液态金属合金，例如金属润湿层可以是硼，铝，铟，镓或铊。在另一个实例中，控制在GaN膜生长期间具有镓湿润层的厚度或存在。

9. 发明申请

WO2014198370A1 HALBLEITERVORRICHTUNG MIT NANOSÄULEN AUS GRUPPE III-NITRIDMATERIAL UND HERSTELLUNGSVERFAHREN FÜR EINE SOLCHE HALBLEITERVORRICHTUNG 审中-公开
标题翻译： WITH III族氮化物和方法的用于这样的半导体器件NANO PILLARS半导体器件
公开(公告)号：WO2014198370A1
公开(公告)日：2014-12-18
申请号：PCT/EP2014/001280
申请日：2014-05-12
申请人： FORSCHUNGSVERBUND BERLIN E.V.
发明人： BRANDT, Oliver , GEELHAAR, Lutz , WÖLZ, Martin
IPC分类号： H01L21/02
CPC分类号： H01L21/02483 , H01L21/02422 , H01L21/02491 , H01L21/0254 , H01L21/02603
摘要： Die Erfindung betrifft eine Halbleitervorrichtung (10), umfassend eine Mehrzahl nanoskaliger Halbleitersäulen (1) bestehend aus Gruppe III-Nitridmaterial und ein Substrat (2), mit einer durchgehenden, lochfreien Oberflächenschicht, die Titannitrid (TiN) und/oder Titanmonoxid (TiO) enthält, auf der die Mehrzahl der Halbleitersäulen (1) angeordnet ist.
摘要翻译：本发明涉及一种包含由III族氮化物材料的多个纳米级半导体柱（1）与衬底（2），具有连续的，无针孔的表面层，氮化钛（TiN）和/或一氧化钛（二氧化钛）包含半导体器件（10）在其上多个半导体柱（1）的布置。

10. 发明申请

WO2014123513A1 CHEMICAL SENSOR ARRAYS FOR ODOR DETECTION 审中-公开
标题翻译：用于气味检测的化学传感器阵列
公开(公告)号：WO2014123513A1
公开(公告)日：2014-08-14
申请号：PCT/US2013/024778
申请日：2013-02-05
申请人： EMPIRE TECHNOLOGY DEVELOPMENT LLC
发明人： UEDA, Masahiro
IPC分类号： G01N33/497
CPC分类号： H01L21/388 , G01N27/126 , G01N27/4145 , G01N33/0001 , G01N33/0031 , H01L21/02565 , H01L21/02603 , H01L21/02625 , H01L21/02664 , H01L21/477
摘要： An array of semiconductor chemical sensors and a method for manufacturing the array of semiconductor chemical sensors are disclosed. In some examples, the method may include providing a semiconductor substrate including a plurality of areas, and ejecting onto each area of the semiconductor substrate a solution including at least one modification material for modifying each area of the semiconductor substrate.
摘要翻译：公开了半导体化学传感器阵列和半导体化学传感器阵列的制造方法。在一些示例中，该方法可以包括提供包括多个区域的半导体衬底，并且向半导体衬底的每个区域喷射包含至少一种用于修改半导体衬底的每个区域的修饰材料的溶液。

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