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    • 10. 发明申请
    • VERTICAL CAVITY SURFACE EMITTING LASER
    • 垂直孔表面发射激光
    • WO2016045935A1
    • 2016-03-31
    • PCT/EP2015/070158
    • 2015-09-03
    • KONINKLIJKE PHILIPS N.V.
    • GERLACH, Philipp HenningJÄGER, Roland Aloisius
    • H01S5/183H01S5/30H01S5/42
    • H01S5/423H01S5/026H01S5/183H01S5/18305H01S5/18308H01S5/18313H01S5/18369H01S5/18386H01S5/18391H01S5/187H01S5/305H01S5/42
    • The invention describes a Vertical Cavity Surface Emitting Laser and a method of manufacturing such a Vertical Cavity Surface Emitting Laser. The Vertical Cavity Surface Emitting Laser comprising a first electrical contact (105, 405, 505, 605, 705), a substrate (110, 410, 610, 710), a first distributed Bragg reflector (115, 415, 615, 715), an active layer (120, 420, 620, 720), a distributed heterojunction bipolar phototransistor (125, 425, 625, 725), a second distributed Bragg reflector (130, 430, 630, 730) and a second electrical contact (135, 435, 535, 635, 735), the distributed heterojunction bipolar phototransistor (125, 425, 625, 725) comprising a collector layer (125a), a light sensitive layer (125c), a base layer (125e) and an emitter layer (125f), wherein the distributed heterojunction bipolar phototransistor (125, 425, 625, 725) is arranged such that there is an optical coupling between the active layer (120, 420, 620, 720) and the distributed heterojunction bipolar phototransistor (125, 425, 625, 725) for providing an active carrier confinement by means of the distributed heterojunction bipolar phototransistor (125, 425, 625, 725) such that an optical mode of the Vertical Cavity Surface Emitting Laser is self- positioning in accordance with the active carrier confinement during operation of the Vertical Cavity Surface Emitting Laser. It is the intention of the present invention to provide a VCSEL which can be easily and reliably processed by integrating the distributed heterojunction bipolar phototransistor (125, 425, 625, 725).
    • 本发明描述了垂直腔表面发射激光器和制造这种垂直腔面发射激光器的方法。 所述垂直腔表面发射激光器包括第一电触点(105,405,505,605,705),基底(110,410,610,710),第一分布布拉格反射器(115,415,615,715) 有源层(120,420,620,720),分布式异质结双极光电晶体管(125,425,625,725),第二分布布拉格反射器(130,430,630,730)和第二电触点(135, 包括集电极层(125a),光敏层(125c),基极层(125e)和发射极层(125)的分布异质结双极光电晶体管(125,425,625,725) 125f),其中分布式异质结双极光电晶体管(125,425,625,725)被布置成使得在有源层(120,420,620,720)和分布式异质结双极光电晶体管(125,425)之间存在光耦合 ,625,725),用于通过分布式异质结双极光电晶体管(125)提供有源载流子限制 ,425,625,725),使得垂直空腔表面发射激光器的光学模式根据垂直腔表面发射激光器的操作期间的主动载波限制而自动定位。 本发明的目的是提供一种通过集成分布式异质结双极光电晶体管(125,425,625,725)可以容易且可靠地加工的VCSEL。